MJE13009G. SWITCHMODE Series NPN Silicon Power Transistors 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS

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1 SWITCHMODE Series NPN Silicon Power Transisors The MJE39G is designed for high volage, high speed power swiching inducive circuis where fall ime is criical. They are paricularly suied for 5 and 22 V SWITCHMODE applicaions such as Swiching Regulaors, Inverers, Moor Conrols, Solenoid/Relay drivers and Deflecion circuis. Feaures O(sus) 4 V and 3 V Reverse Bias SOA wih Inducive T C = C Inducive Swiching Marix 3 o 2 Amp, 25 and C 8 A, C is 2 ns (Typ) 7 V Blocking Capabiliy SOA and Swiching Applicaions Informaion These Devices are Pb Free and are RoHS Complian* MAXIMUM RATINGS Raing Symbol Value Uni Collecor Emier Volage O(sus) 4 Vdc Collecor Emier Volage V 7 Vdc Emier Base Volage V EBO 9 Vdc Collecor Curren Base Curren Emier Curren Coninuous Peak (Noe ) Coninuous Peak (Noe ) Coninuous Peak (Noe ) Toal Device T A = 25 C Derae above 25 C Toal Device T C = 25 C Derae above 25 C Operaing and Sorage Juncion Temperaure Range THERMAL CHARACTERISTICS 2 M 24 I B 6 I BM 2 I E 8 I EM 36 P D 2.6 P D.8 T J, T sg 65 o +5 Adc Adc Adc W W/ C W W/ C Characerisics Symbol Max Uni Thermal Resisance, Juncion o Ambien R JA 62.5 C/W Thermal Resisance, Juncion o Case R JC.25 C/W Maximum Lead Temperaure for Soldering Purposes /8 from Case for 5 Seconds C T L 275 C Sresses exceeding Maximum Raings may damage he device. Maximum Raings are sress raings only. Funcional operaion above he Recommended Operaing Condiions is no implied. Exended exposure o sresses above he Recommended Operaing Condiions may affec device reliabiliy.. Pulse Tes: Pulse Widh = 5 ms, Duy Cycle %. 2 AMPERE NPN SILICON POWER TRANSISTOR 4 VOLTS WATTS 2 3 A Y WW G hp://onsemi.com TO 22AB CASE 22A 9 STYLE MARKING DIAGRAM MJE39G AY WW = Assembly Locaion = Year = Work Week = Pb Free Package Device Package Shipping MJE39G ORDERING INFORMATION TO 22 (Pb Free) 5 Unis / Rail *For addiional informaion on our Pb Free sraegy and soldering deails, please download he ON Semiconducor Soldering and Mouning Techniques Reference Manual, SOLDERRM/D. Semiconducor Componens Indusries, LLC, 2 Ocober, 2 Rev. Publicaion Order Number: MJE39/D

2 Î ELECTRICAL CHARACTERISTICS (T C = 25 C unless oherwise noed) Characerisic Symbol Min ÎÎÎ Typ Max ÎÎÎ Uni Î OFF CHARACTERISTICS (Noe 2) Collecor Emier Susaining Volage O(sus) 4 ÎÎÎ ÎÎÎ Vdc ( = ma, I B = ) Î Collecor Cuoff Curren I (V = Raed Value, V BE(off) =.5 Vdc) CEV madc ÎÎÎ (V = Raed Value, V BE(off) =.5 Vdc, T C = C) ÎÎÎ 5 ÎÎÎ Emier Cuoff Curren I EBO ÎÎÎ (V EB = 9 Vdc, = ) ÎÎ ÎÎÎ madc ÎÎ SECOND BREAKDOWN ÎÎ Second Breakdown Collecor Curren wih base forward biased I ÎÎÎ S/b See Figure ÎÎÎ Clamped Inducive SOA wih Base Reverse Biased See Figure 2 Î ON CHARACTERISTICS (Noe 2) DC Curren Gain h FE ÎÎÎ ( = 5 Adc, = 5 Vdc) 8 ÎÎÎ 4 ÎÎÎ ( = 8 Adc, = 5 Vdc) 6 3 Î Collecor Emier Sauraion Volage V ( = 5 Adc, I B CE(sa) Vdc ÎÎÎ = Adc) ( = 8 Adc, I B =.6 Adc) ÎÎÎ.5 ÎÎÎ (I C = 2 Adc, I B = 3 Adc) 3 ( = 8 Adc, I B =.6 Adc, T C = C) ÎÎÎ 2 ÎÎÎ Base Emier Sauraion Volage V BE(sa) ÎÎÎ Vdc ( = 5 Adc, I B = Adc) ÎÎ (I C = 8 Adc, I B =.6 Adc) ( = 8 Adc, I B =.6 Adc, T C ÎÎÎ.2 ÎÎÎ.6 ÎÎÎ = C).5 Î DYNAMIC CHARACTERISTICS ÎÎÎ Curren Gain Bandwidh Produc f ( = 5 madc, = Vdc, f = MHz) T 4 ÎÎ ÎÎ MHz Oupu Capaciance C ob ÎÎÎ 8 ÎÎÎ (V CB = Vdc, I E =, f =. MHz) ÎÎÎ pf Î SWITCHING CHARACTERISTICS Resisive Load (Table ) Î Delay Time ÎÎÎ d.6. ÎÎÎ Rise Time (V Î CC = 25 Vdc, = 8 A, I B = I B2 =.6 A, p = 25, r.45 ÎÎÎ Sorage Time Duy Cycle %) s ÎÎ.3 3 ÎÎ Fall Time ÎÎÎ f ÎÎ.2.7 ÎÎ Inducive Load, Clamped (Table, Figure 3) Î Volage Sorage Time ( = 8 A, V clamp = 3 Vdc, sv ÎÎÎ Crossover Time I Î B =.6 A, V BE(off) = 5 Vdc, T C = C) c.2.7 ÎÎÎ 2. Pulse Tes: Pulse Widh = 3, Duy Cycle = 2%. hp://onsemi.com 2

3 IC, COLLECTOR CURRENT (AMP) ms σ σ 2 T C = 25 C dc.5 THERMAL LIMIT.2 BONDING WIRE LIMIT. SECOND BREAKDOWN LIM.5 CURVES IT APPLY BELOW RATED.2 O , COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR (AMP) T C C I B = 2.5 A V BE(off) = 9 V 5 V 3 V V V, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS) 8 Figure. Forward Bias Safe Operaing Area Figure 2. Reverse Bias Swiching Safe Operaing Area The Safe Operaing Area figures shown in Figures and 2 are specified raings for hese devices under he es condiions shown. POWER DERATING FACTOR THERMAL DERATING SECOND BREAK DOWN DERATING T C, CASE TEMPERATURE ( C) Figure 3. Forward Bias Power Deraing There are wo limiaions on he power handling abiliy of a ransisor: average juncion emperaure and second breakdown. Safe operaing area curves indicae limis of he ransisor ha mus be observed for reliable operaion; i.e., he ransisor mus no be subjeced o greaer dissipaion han he curves indicae. The daa of Figure is based on T C = 25 C; T J(pk) is variable depending on power level. Second breakdown pulse limis are valid for duy cycles o % bu mus be deraed when T C 25 C. Second breakdown limiaions do no derae he same as hermal limiaions. Allowable curren a he volages shown on Figure may be found a any case emperaure by using he appropriae curve on Figure 3. T J(pk) may be calculaed from he daa in Figure 4. A high case emperaures, hermal limiaions will reduce he power ha can be handled o values less han he limiaions imposed by second breakdown. Use of reverse biased safe operaing area daa (Figure 2) is discussed in he applicaions informaion secion. r(), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = SINGLE PULSE Z JC() = r() R JC R JC =.25 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T J(pk) - T C = P (pk) Z JC() k, TIME (ms) P (pk) 2 DUTY CYCLE, D = / 2 Figure 4. Typical Thermal Response [Z JC ()] hp://onsemi.com 3

4 hfe, DC CURRENT GAIN C - 55 C = 5 V T J = 5 C , COLLECTOR CURRENT (AMP) 2 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.6 = A 3 A 5 A 8 A 2 A T J = 25 C I B, BASE CURRENT (AMP) Figure 5. DC Curren Gain Figure 6. Collecor Sauraion Region.4.7 V, VOLTAGE (VOLTS) /I B = 3 T J = - 55 C 25 C 5 C V, VOLTAGE (VOLTS) /I B = 3 T J = 5 C 25 C - 55 C , COLLECTOR CURRENT (AMP) Figure 7. Base Emier Sauraion Volage , COLLECTOR CURRENT (AMP) Figure 8. Collecor Emier Sauraion Volage, COLLECTOR CURRENT ( A) μ IC K K. -.4 = 25 V T J = 5 C 25 C C 75 C 5 C 25 C REVERSE FORWARD V BE, BASE-EMITTER VOLTAGE (VOLTS) +.6 C, CAPACITANCE (pf) 4K 2K K C ib C ob V R, REVERSE VOLTAGE (VOLTS) T J = 25 C 2 5 Figure 9. Collecor Cuoff Region Figure. Capaciance hp://onsemi.com 4

5 Table. Tes Condiions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING TEST CIRCUITS 5 V P W DUTY CYCLE % r, f ns 68. F k N F 27 NOTE PW and Adjused for Desired R B Adjused for Desired I B + 5 Vk N N4933 2N k 2N /2 W + 5 V MJE2 L I R C B I B D.U.T. MJE2 -V BE(off) MR826* V clamp *SELECTED FOR kv 5. k 5 R B D - 4. V TUT +25 V R C SCOPE CIRCUIT VALUES Coil Daa: Ferroxcube Core #6656 Full Bobbin (~6 Turns) #6 GAP for 2 H/2 A L coil = 2 H = 2 V V clamp = 3 Vdc = 25 V R C = 5 D = N582 or Equiv. R B = TEST WAVEFORMS M M TIME OUTPUT WAVEFORMS f CLAMPED f UNCLAMPED 2 f 2 V clamp ADJUSTED TO OBTAIN L coil (M ) 2 L coil (M ) V clamp Tes Equipmen Scope Tekronics 475 or Equivalen + V 25-8 V r, f < ns Duy Cycle =.% R B and R C adjused for desired I B and hp://onsemi.com 5

6 APPLICATIONS INFORMATION FOR SWITCHMODE SPECIFICATIONS INTRODUCTION The primary consideraions when selecing a power ransisor for SWITCHMODE applicaions are volage and curren raings, swiching speed, and energy handling capabiliy. In his secion, hese specificaions will be discussed and relaed o he circui examples illusraed in Table 2. (Noe 3) VOLTAGE REQUIREMENTS Boh blocking volage and susaining volage are imporan in SWITCHMODE applicaions. Circuis B and C in Table 2 illusrae applicaions ha require high blocking volage capabiliy. In boh circuis he swiching ransisor is subjeced o volages subsanially higher han afer he device is compleely off (see load line diagrams a = I leakage in Table 2). The blocking capabiliy a his poin depends on he base o emier condiions and he device juncion emperaure. Since he highes device capabiliy occurs when he base o emier juncion is reverse biased (V ), his is he recommended and specified use condiion. Maximum EV a raed V is specified a a relaively low reverse bias (.5 V) boh a 25 C and C. Increasing he reverse bias will give some improvemen in device blocking capabiliy. The susaining or acive region volage requiremens in swiching applicaions occur during urn on and urn off. If he load conains a significan capaciive componen, high curren and volage can exis simulaneously during urn on and he pulsed forward bias SOA curves (Figure ) are he proper design limis. For inducive loads, high volage and curren mus be susained simulaneously during urn off, in mos cases, wih he base o emier juncion reverse biased. Under hese condiions he collecor volage mus be held o a safe level a or below a specific value of collecor curren. This can be accomplished by several means such as acive clamping, RC snubbing, load line shaping, ec. The safe level for hese devices is specified as a Reverse Bias Safe Operaing Area (Figure 2) which represens volage curren condiions ha can be susained during reverse biased urn off. This raing is verified under clamped condiions so ha he device is never subjeced o an avalanche mode. In he four applicaion examples (Table 2) load lines are shown in relaion o he pulsed forward and reverse biased SOA curves. In circuis A and D, inducive reacance is clamped by he diodes shown. In circuis B and C he volage is clamped by he oupu recifiers, however, he volage induced in he primary leakage inducance is no clamped by hese diodes and could be large enough o desroy he device. A snubber nework or an addiional clamp may be required o keep he urn off load line wihin he Reverse Bias SOA curve. Load lines ha fall wihin he pulsed forward biased SOA curve during urn on and wihin he reverse bias SOA curve during urn off are considered safe, wih he following assumpions:. The device hermal limiaions are no exceeded. 2. The urn on ime does no exceed (see sandard pulsed forward SOA curves in Figure ). 3. The base drive condiions are wihin he specified limis shown on he Reverse Bias SOA curve (Figure 2). CURRENT REQUIREMENTS An efficien swiching ransisor mus operae a he required curren level wih good fall ime, high energy handling capabiliy and low sauraion volage. On his daa shee, hese parameers have been specified a 8 amperes which represens ypical design condiions for hese devices. The curren drive requiremens are usually dicaed by he (sa) specificaion because he maximum sauraion volage is specified a a forced gain condiion which mus be duplicaed or exceeded in he applicaion o conrol he sauraion volage. SWITCHING REQUIREMENTS In many swiching applicaions, a major porion of he ransisor power dissipaion occurs during he fall ime ( fi ). For his reason considerable effor is usually devoed o reducing he fall ime. The recommended way o accomplish his is o reverse bias he base emier juncion during urn off. The reverse biased swiching characerisics for inducive loads are discussed in Figure and Table 3 and resisive loads in Figures 3 and 4. Usually he inducive load componen will be he dominan facor in SWITCHMODE applicaions and he inducive swiching daa will more closely represen he device performance in acual applicaion. The inducive swiching characerisics are derived from he same circui used o specify he reverse biased SOA curves, (See Table ) providing correlaion beween es procedures and acual use condiions. 3. For deailed informaion on specific swiching applicaions, see ON Semiconducor Applicaion Noes AN 79, AN 767. hp://onsemi.com 6

7 RESISTIVE SWITCHING PERFORMANCE K 7 5 = 25 V /I B = 5 T J = 25 C 2K K s, TIME (ns) 3 2 r, TIME (ns) = 25 V /I B = 5 T J = 25 C 2 7 V BE(off) = 5 V f , COLLECTOR CURRENT (AMP), COLLECTOR CURRENT (AMP) Figure. Turn On Time Figure 2. Turn Off Time 9% M 9% V clamp sv rv fi i V clamp I B 9% IB % M % ICM 2% IC c CURRENT 2 A/DIV VOLTAGE 5 V/DIV TIME Figure 3. Inducive Swiching Measuremens TIME 2 ns/div Figure 4. Typical Inducive Swiching Waveforms (a 3 V and 2 A wih I B = 2.4 A and V BE(off) = 5 V) hp://onsemi.com 7

8 Table 2. Applicaions Examples of Swiching Circuis CIRCUIT LOAD LINE DIAGRAMS TIME DIAGRAMS SERIES SWITCHING REGULATOR 24 A TURN-ON (FORWARD BIAS) SOA on ms DUTY CYCLE % A V O Collecor Curren T C = C 2 A TURN- ON TURN- OFF P D = 4 W 35 V 2 TURN-OFF (REVERSE BIAS) SOA.5 V V BE(off) 9. V DUTY CYCLE % TIME 4 V 7 V COLLECTOR VOLTAGE TIME B RINGING CHOKE INVERTER N V O Collecor Curren 24 A T C = C 2 A TURN-OFF TURN-ON TURN-ON (FORWARD BIAS) SOA TURN-ON on ms TURN-ON DUTY CYCLE % P D = 4 W 2 35 V TURN-OFF (REVERSE BIAS) SOA TURN-OFF.5 V V BE(off) 9. V TURN-OFF DUTY CYCLE % + N(V o ) on off LEAKAGE SPIKE 4 V 7 V + N(V o ) COLLECTOR VOLTAGE C PUSH PULL INVERTER/CONVERTER V O Collecor Curren 24 A T C = C 2 A TURN-OFF TURN-ON (FORWARD BIAS) SOA TURN-ON on ms TURN-ON DUTY CYCLE % P D = 4 W 2 35 V TURN-OFF (REVERSE BIAS) SOA TURN-ON TURN-OFF.5 V V BE(off) 9. V TURN-OFF DUTY CYCLE % 2 off on 2 4 V 7 V COLLECTOR VOLTAGE SOLENOID DRIVER 24 A TURN-ON (FORWARD BIAS) SOA TURN-ON on ms TURN-ON DUTY CYCLE % D SOLENOID Collecor Curren T C = C 2 A TURN-OFF TURN-ON P D = 4 W 2 35 V TURN-OFF (REVERSE BIAS) SOA TURN-OFF.5 V V BE(off) 9. V TURN-OFF DUTY CYCLE % on off 4 V 7 V COLLECTOR VOLTAGE hp://onsemi.com 8

9 Table 3. Typical Inducive Swiching Performance ÎÎÎ AMP ÎÎ T C C sv rv fi i c ns ns ns ns ns 3 ÎÎÎ Î 5 ÎÎ ÎÎ ÎÎ ÎÎÎ NOTE: All Daa recorded In he Inducive Swiching Circui In Table. SWITCHING TIME NOTES In resisive swiching circuis, rise, fall, and sorage imes have been defined and apply o boh curren and volage waveforms since hey are in phase. However, for inducive loads which are common o SWITCHMODE power supplies and hammer drivers, curren and volage waveforms are no in phase. Therefore, separae measuremens mus be made on each waveform o deermine he oal swiching ime. For his reason, he following new erms have been defined. sv = Volage Sorage Time, 9% I B o % M rv = Volage Rise Time, 9% M fi = Curren Fall Time, 9 % M i = Curren Tail, 2% M c = Crossover Time, % M o % M An enlarged porion of he urn off waveforms is shown in Figure 3 o aid in he visual ideniy of hese erms. For he designer, here is minimal swiching loss during sorage ime and he predominan swiching power losses occur during he crossover inerval and can be obained using he sandard equaion from AN222/D: P SWT = /2 ( c ) f Typical inducive swiching waveforms are shown in Figure 4. In general, rv + fi c. However, a lower es currens his relaionship may no be valid. As is common wih mos swiching ransisors, resisive swiching is specified a 25 C and has become a benchmark for designers. However, for designers of high frequency converer circuis, he user oriened specificaions which make his a SWITCHMODE ransisor are he inducive swiching speeds ( c and sv ) which are guaraneed a C. hp://onsemi.com 9

10 PACKAGE DIMENSIONS H Q Z L V G B N D A K F T U S R J TO 22 CASE 22A 9 ISSUE AG C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconducor and are regisered rademarks of Semiconducor Componens Indusries, LLC (SCILLC). SCILLC reserves he righ o make changes wihou furher noice o any producs herein. SCILLC makes no warrany, represenaion or guaranee regarding he suiabiliy of is producs for any paricular purpose, nor does SCILLC assume any liabiliy arising ou of he applicaion or use of any produc or circui, and specifically disclaims any and all liabiliy, including wihou limiaion special, consequenial or incidenal damages. Typical parameers which may be provided in SCILLC daa shees and/or specificaions can and do vary in differen applicaions and acual performance may vary over ime. All operaing parameers, including Typicals mus be validaed for each cusomer applicaion by cusomer s echnical expers. SCILLC does no convey any license under is paen righs nor he righs of ohers. SCILLC producs are no designed, inended, or auhorized for use as componens in sysems inended for surgical implan ino he body, or oher applicaions inended o suppor or susain life, or for any oher applicaion in which he failure of he SCILLC produc could creae a siuaion where personal injury or deah may occur. Should Buyer purchase or use SCILLC producs for any such uninended or unauhorized applicaion, Buyer shall indemnify and hold SCILLC and is officers, employees, subsidiaries, affiliaes, and disribuors harmless agains all claims, coss, damages, and expenses, and reasonable aorney fees arising ou of, direcly or indirecly, any claim of personal injury or deah associaed wih such uninended or unauhorized use, even if such claim alleges ha SCILLC was negligen regarding he design or manufacure of he par. SCILLC is an Equal Opporuniy/Affirmaive Acion Employer. This lieraure is subjec o all applicable copyrigh laws and is no for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Lieraure Disribuion Cener for ON Semiconducor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderli@onsemi.com N. American Technical Suppor: Toll Free USA/Canada Europe, Middle Eas and Africa Technical Suppor: Phone: Japan Cusomer Focus Cener Phone: hp://onsemi.com ON Semiconducor Websie: Order Lieraure: hp:// For addiional informaion, please conac your local Sales Represenaive MJE39/D