AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor

Size: px
Start display at page:

Download "AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor"

Transcription

1 Dual PChannel Enhancement Mode Field Effect Transistor General Description The AO4813/L uses advanced trench technology to provide excellent R DS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. AO4813 and AO4813L are electrically identical. RoHS Compliant AO4813L is Halogen Free Features V DS (V) = V I D = 7.1 A (V GS = V) R DS(ON) < mω (V GS = V) R DS(ON) < 4mΩ (V GS = 4.V) % UIS Tested! SOIC8 SOIC8 Top View D S G S1 G D D G1 S1 G S Absolute Maximum Ratings T A = C unless otherwise noted Parameter Symbol Maximum DrainSource Voltage GateSource Voltage Continuous Drain Current AF Pulsed Drain Current B Power Dissipation T A = C T A =7 C T A = C T A =7 C Junction and Storage Temperature Range V DS V GS I D I DM P D Avalanche Current B 11 A I AR Repetitive avalanche energy.3mh B 18 mj E AR T J, T STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s C/W Maximum JunctiontoAmbient A R θja SteadyState 74 1 C/W Maximum JunctiontoLead C SteadyState R θjl 3 4 C/W ± 1.8 to 1 Units V V A W C

2 Electrical Characteristics (T J = C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =µa, V GS =V V V DS =V, V GS =V 1 I DSS Zero Gate Voltage Drain Current µa T J = C I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =µa V I D(ON) On state drain current V GS =V, V DS =V A R DS(ON) Static DrainSource OnResistance V GS =V, I D =7.1A V GS =4.V, I D =.6A T J =1 C mω g FS Forward Transconductance V DS =V, I D =7.1A 19.6 S V SD Diode Forward Voltage I S =1A,V GS =V.7 1 V I S Maximum BodyDiode Continuous Current 4. A DYNAMIC PARAMETERS C iss Input Capacitance pf C oss Output Capacitance V GS =V, V DS =1V, f=1mhz 319 pf C rss Reverse Transfer Capacitance 11 9 pf R g Gate resistance V GS =V, V DS =V, f=1mhz Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge (V).9 4 nc Q g (4.V) Total Gate Charge (4.V) nc V GS =V, V DS =1V, I D =7.1A Q gs Gate Source Charge 8 nc Q gd Gate Drain Charge 4.4 nc t D(on) TurnOn DelayTime 9. ns t r TurnOn Rise Time V GS =V, V DS =1V, R L =.Ω, 8 ns t D(off) TurnOff DelayTime R GEN =3Ω 44. ns t f TurnOff Fall Time. ns t rr Body Diode Reverse Recovery Time I F =7.1A, di/dt=a/µs. 31 ns Q rr Body Diode Reverse Recovery Charge I F =7.1A, di/dt=a/µs 14.7 nc A: The value of R θja is measured with the device mounted on 1in FR4 board with oz. Copper, in a still air environment with T A = C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on 1 in FR4 board with oz. Copper, in a still air environment with T A = C. The SOA curve provides a single pulse rating. F. The current rating is based on the t s junction to ambient thermal resistance rating. Rev8: Oct 8 mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

3 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: PCHANNEL V V 4V V DS =V I D (A) 1 I D (A) 1 3.V 1 C V GS =3V C V DS (Volts) Fig 1: OnRegion Characteristics V GS (Volts) Figure : Transfer Characteristics R DS(ON) (mω) 3 1 V GS =4.V V GS =V Normalized OnResistance I D =7.1A V GS =V V GS =4.V I D =.6A 1 6 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage E1 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature R DS(ON) (mω) 4 I D =7.1A 1 C I S (A) 1.E 1.E1 1.E 1.E3 1.E4 1 C C 1.E C V GS (Volts) Figure : OnResistance vs. GateSource Voltage 1.E V SD (Volts) Figure 6: BodyDiode Characteristics

4 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: PCHANNEL V GS (Volts) V DS =1V I D =7.1A Q g (nc) Figure 7: GateCharge Characteristics Capacitance (pf) C oss C iss C rss 1 V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps).. 1. T J(Max) =1 C, T A = C R DS(ON) limited 1s.1s µs µs 1ms ms Power (W) 4 T J(Max) =1 C T A = C s DC V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note E) Z θja Normalized Transient Thermal Resistance 1.1 D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =1 C/W Single Pulse In descending order D=.,.3,.1,.,.,.1, single pulse P D T on T Pulse Width (s) 1 Figure 11: Normalized Maximum Transient Thermal Impedance

5 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & Waveforms ton toff td(on) t r td(off) tf Rg 9% % Id L Unclamped Inductive Switching (UIS) Test Circuit & Waveforms E = 1/ LI AR AR Rg Id BV DSS I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr

AOD409 P-Channel Enhancement Mode Field Effect Transistor

AOD409 P-Channel Enhancement Mode Field Effect Transistor OD49 PChannel Enhancement Mode Field Effect Transistor General Description The OD49 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. With the excellent

More information

AOT402 N-Channel Enhancement Mode Field Effect Transistor

AOT402 N-Channel Enhancement Mode Field Effect Transistor AOT42 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT42 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable

More information

AP4511GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp.

AP4511GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. AP5GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BV DSS 35V Low On-resistance D D D R DS(ON) 5mΩ D D D D D Fast

More information

P-Channel 40-V (D-S), 175 C MOSFET

P-Channel 40-V (D-S), 175 C MOSFET New Product P-Channel 4-V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) (A) d.94 at V GS = - V - 5-4.45 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature

More information

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast

More information

N-Channel 40-V (D-S), 175 C MOSFET

N-Channel 40-V (D-S), 175 C MOSFET N-Channel 4-V (D-S), 75 C MOSFET SUD5N4-6P PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, c Q g (Typ.) 6 at V GS = V 2 4 5.6 nc 8 at V GS = 4.5 V 2 FEATURES TrenchFET Power MOSFET % R g and UIS Tested

More information

N-Channel 40-V (D-S) 175 C MOSFET

N-Channel 40-V (D-S) 175 C MOSFET N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4

More information

N-Channel 60-V (D-S), 175 C MOSFET

N-Channel 60-V (D-S), 175 C MOSFET N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter

More information

Features. Description. Table 1. Device summary. Order code Marking Packages Packaging. STP110N55F6 110N55F6 TO-220 Tube

Features. Description. Table 1. Device summary. Order code Marking Packages Packaging. STP110N55F6 110N55F6 TO-220 Tube N-channel 55 V, 4.5 Ω typ., 110 A STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on) max. I D TAB STP110N55F6 55 V 5.2 mω 110 A TO-220 1 2 3 Low

More information

N-Channel 20-V (D-S) 175 C MOSFET

N-Channel 20-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for

More information

TSM020N03PQ56 30V N-Channel MOSFET

TSM020N03PQ56 30V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q

More information

Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube

Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max I D P TOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W TO-220

More information

Features -2.4A -1.8A. Part Number Case Packaging DMC6070LND-7 POWERDI ,000/Tape & Reel DMC6070LND-13 POWERDI ,000/Tape & Reel

Features -2.4A -1.8A. Part Number Case Packaging DMC6070LND-7 POWERDI ,000/Tape & Reel DMC6070LND-13 POWERDI ,000/Tape & Reel YYWW ADVANCED NEW PRODUCT INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI Product Summary Device V (BR)DSS R DS(ON) max Q 6V Q -6V I D max T A = +5 C 85mΩ @ V = V 3.A mω @ V = 4.5V.7A 5mΩ

More information

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS

More information

TSM2N7002K 60V N-Channel MOSFET

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching

More information

N-Channel 1.25-W, 2.5-V MOSFET

N-Channel 1.25-W, 2.5-V MOSFET Si3DS N-Channel.5-W,.5-V MOSFET V DS (V) r DS(on) ( ) (A).5 @ V GS =.5 V..5 @ V GS =.5 V. TO-3 (SOT-3) G 3 D S Top View Si3DS (A)* *Marking Code Parameter Symbol Limit Unit Drain-Source Voltage V DS V

More information

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

More information

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY

More information

Features. (Note 1b) 1.2. (Note 1c) 1

Features. (Note 1b) 1.2. (Note 1c) 1 NDS943 3V P-Channel PowerTrench MOSFET May NDS943 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for

More information

Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)

Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W) PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous

More information

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED

More information

IRLR8729PbF IRLU8729PbF

IRLR8729PbF IRLU8729PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits

More information

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ71A 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT

More information

OptiMOS TM 3 Power-Transistor

OptiMOS TM 3 Power-Transistor BSC7N1NS3 G OptiMOS TM 3 Power-Transistor Features Very low gate charge for high frequency applications Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM)

More information

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

P-Channel 1.25-W, 1.8-V (G-S) MOSFET Si5DS P-Channel.5-W,.-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V ±.5 -.7 at V GS = -.5 V ±. at V GS = -. V ± FEATURES Halogen-free According to IEC 9-- Available TrenchFET

More information

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000 PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits

More information

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 Ω 3.8 A TYPICAL R DS(on) =1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT

More information

WFU4N65S Product Description

WFU4N65S Product Description 65V SuperJunction Power MOSFET Features Ultra low Rdson Ultra low gate charge (typ. Qg =3nC) % UIS tested RoHS compliant G General escription Power MOSFET is fabricated using advanced super junction technology.

More information

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

IRFP450. N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET

IRFP450. N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRFP450 500 V < 0.4 Ω 14 A TYPICAL R DS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY

More information

OptiMOS -3 Small-Signal-Transistor

OptiMOS -3 Small-Signal-Transistor BSS66N OptiMOS -3 Small-Signal-Transistor Features N-channel Enhancement mode Logic level (.5V rated) Avalanche rated Product Summary V DS 6 V R DS(on),max V GS = V 6 mw V GS =.5 V 9 I D 3. A Qualified

More information

D-Pak TO-252AA. I-Pak TO-251AA. 1

D-Pak TO-252AA. I-Pak TO-251AA.  1 l Ultra Low OnResistance l PChannel l Surface Mount (IRFR920N) l Straight Lead (IRFU920N) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation

More information

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel

More information

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product

More information

IRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET

IRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY

More information

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1

More information

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1

More information

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)

More information

Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units

Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units N-Channel.5V Specified PowerTrench TM MOSFET April 999 General Description This N-Channel.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According

More information

OptiMOS TM 3 Power-Transistor

OptiMOS TM 3 Power-Transistor BSC47N8NS3 G OptiMOS TM 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary

More information

N-channel enhancement mode TrenchMOS transistor

N-channel enhancement mode TrenchMOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)

More information

Power MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A

Power MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) ( ) = 0 V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement

More information

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET

STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP6NK60Z STP6NK60ZFP STB6NK60Z

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD6N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS

More information

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching

More information

OptiMOS TM Power-Transistor

OptiMOS TM Power-Transistor Type BSC28N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target

More information

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices

More information

Features. Symbol JEDEC TO-220AB

Features. Symbol JEDEC TO-220AB Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted NDSAN N-Channel, Logic Level, PowerTrench MOSFET June NDSAN General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been

More information

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel

More information

OptiMOS Power-Transistor Product Summary

OptiMOS Power-Transistor Product Summary OptiMOS Power-Transistor Product Summary V DS 55 V R DS(on),max 4) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175 C

More information

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated

More information

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested

More information

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640 Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D

More information

FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features

FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features FDD443 4V P-Channel PowerTrench MOSFET -4V, -4A, 44mΩ Features Max r DS(on) = 44mΩ at V GS = -V, I D = -6.7A Max r DS(on) = 64mΩ at V GS = -4.5V, I D = -5.5A High performance trench technology for extremely

More information

P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET Si33DS P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).39 at V GS = -.5 V -.7 -.5 at V GS = -.5 V -..68 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to IEC 69-- Available

More information

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching

More information

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance

More information

Final data. Maximum Ratings Parameter Symbol Value Unit

Final data. Maximum Ratings Parameter Symbol Value Unit SPPN8C3 SPN8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).45 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective

More information

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Applications l Reset Switch for Active Clamp Reset C-C converters SMPS MOSFET P - 94297 IRF626 HEXFET Power MOSFET V SS R S(on) max I -50V 0.240Ω@V GS =-0V -2.2A Benefits l Low Gate to rain Charge to Reduce

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET 7/7, VQJ/P, BS7 -Channel 6-V (D-S) MOSFET Part umber V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) 7 5 @ V GS = V.8 to. 7 7.5 @ V GS = V to.5.5 VQJ 6 5.5 @ V GS = V.8 to.5.5 VQP 5.5 @ V GS =

More information

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

QFET TM FQP50N06. Features. TO-220 FQP Series

QFET TM FQP50N06. Features. TO-220 FQP Series 60V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced

More information

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V

More information

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR PD 967 IRFB465PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS HEXFET

More information

Features. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46

Features. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46 N-Channel.8 Vgs Specified PowerTrench MOSFET October 2 General Description This 2V N-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications.

More information

60 V, 350 ma N-channel Trench MOSFET

60 V, 350 ma N-channel Trench MOSFET Rev. 1 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

More information

Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive

Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive BUZ11 N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 30 A TYPICAL R DS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT

More information

Characteristic Value Units Drain-to-Source Voltage. 50 Continuous Drain Current (T C =100 C)

Characteristic Value Units Drain-to-Source Voltage. 50 Continuous Drain Current (T C =100 C) $GYDQFHG 3RZHU 026)(7 IRFZ44 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea 175 C Operating Temperature Lower Leakage

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced

More information

V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175

V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175 PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low

More information

STP10NK80ZFP STP10NK80Z - STW10NK80Z

STP10NK80ZFP STP10NK80Z - STW10NK80Z STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected supermesh TM MOSFET General features Type V DSS R DS(on) I D Pw STP10NK80Z 800V

More information

P-Channel 60 V (D-S) MOSFET

P-Channel 60 V (D-S) MOSFET TP6K P-Channel 6 V (D-S) MOSFET G S PRODUCT SUMMARY V DS (V) R DS(on) ( ) V GS(th) (V) I D (ma) - 6 6 at V GS = - V - to - - 85 TO-6 (SOT-) Top View D Marking Code: 6Kwll 6K = Part Number Code for TP6K

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS V R DS(on),max 3.5 Ω I DSS,min.4 A Available with V GS(th) indicator on reel Pb-free lead plating; RoHS

More information

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free

More information

W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21

W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21 PD 97369 IRLB43PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits

More information

AUIRFR8405 AUIRFU8405

AUIRFR8405 AUIRFU8405 Features Advanced Process Technology New Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units V DS 2 V V GS Max ± 2 V R DSon) max @V GS = V) 24 m * PD - 9787A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 4 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits

More information

STP55NF06L STB55NF06L - STB55NF06L-1

STP55NF06L STB55NF06L - STB55NF06L-1 General features STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II Power MOSFET Type V DSS R DS(on) I D STP55NF06L 60V

More information

IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A

IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive

More information

IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings

IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings PD - 97500A IRF620PbF V DS 20 V HEXFET Power MOSFET R DS(on) max (@ = 4.5V) 2.45 mω 6 R DS(on) max (@ = 2.5V) 2.75 mω 6 6 Q g (typical) 30 nc * SO-8 I D (@T A = 25 C) 27 A Applications OR-ing or hot-swap

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units V DS 2 V V GS Max ±2 V * PD - 973A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 2. m R DSon) max @V GS = 2.V) 27. m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits

More information

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM A M A A December 995 SEMICONDUCTOR RFG7N6, RFP7N6, RFS7N6, RFS7N6SM 7A, 6V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Features 7A, 6V r DS(on) =.4Ω Temperature Compensated PSPICE Model

More information

V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC

V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification

More information

SMPS MOSFET. V DSS R DS (on) max I D

SMPS MOSFET. V DSS R DS (on) max I D Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 93773A IRF820A HEXFET Power MOSFET V DSS R DS (on) max I D 500V 3.0Ω 2.5A Benefits

More information

SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V

SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V SPW3N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances

More information

V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C

V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency

More information

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max. PD 9727 IRFP326PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits

More information

STW12NK90Z. N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH Power MOSFET. Features. Application. Description

STW12NK90Z. N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH Power MOSFET. Features. Application. Description N-channel 900 V, 0.72 Ω, 11 TO-247 Zener-protected SuperMESH Power MOSFET Features Order code V DSS R DS(on) max I D Pw STW12NK90Z 900 V < 0.88 Ω 11 230 W Extremely high dv/dt capability 100% avalanche

More information

T A = 25 C (Notes 3 & 5) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC4040SSD-13 C4040SD 13 12 2,500

T A = 25 C (Notes 3 & 5) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC4040SSD-13 C4040SD 13 12 2,500 Product Line of 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max I D max () T = 25 C (Notes 3 & 5) 25mΩ @ = 1 7.5 Q1 4 4mΩ @ = 4.5 6.2 Features and Benefits Matched

More information

0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39)

0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39) *.6 (4.6).9 (2.28).25 (5.2).9 (4.83).45 (.54) Max..4 (.4).35 (8.89).54 (3.9).42 (3.6) ia. PIN S.48 (29.6).8 (28.4) * May be notched or flat.3 (2.87).2 (2.56).635 (6.3).58 (4.73).37 (.94).26 (.66).5 (2.67).95

More information

Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V

Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V FDP26N40 / FDPF26N40 N-Channel MOSFET 400V, 26A, 0.6Ω Features R DS(on) = 0.3Ω ( Typ.)@ V GS = 0V, I D = 3A Low gate charge ( Typ. 48nC) Low C rss ( Typ. 30pF) Fast switching 00% avalanche tested Improved

More information

SM9992DSQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/12A, R DS(ON) =4.5V =4V =3.7V =3.

SM9992DSQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/12A, R DS(ON) =4.5V =4V =3.7V =3. Dual N-Channel Enhancement Mode MOSFET Features 20V/12, =8.1mΩ (Max.) @ =4.5V =8.5mΩ (Max.) @ =4V =8.8mΩ (Max.) @ =3.7V =9.2mΩ (Max.) @ =3.1V =11mΩ (Max.) @ =2.5V Reliable and Rugged Lead Free and Green

More information