600V-1.7KV GAN POWER CONVERSION DEVICES FOR HIGH EFFICIENCY APPLICATIONS D. C. SHERIDAN, A. RITENOUR, D.Y. LEE, C. WHITMAN, AND A.J.

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1 600V-1.7KV GAN POWER CONVERSION DEVICES FOR HIGH EFFICIENCY APPLICATIONS D. C. SHERIDAN, A. RITENOUR, D.Y. LEE, C. WHITMAN, AND A.J. NADLER GOMACTech April 2014

2 Outline RFMD GAN TECHNOLOGY RFMD introduction 650V GaN Technology and Products Device Characteristics Application Performance 1200V+ Devices Reliability Investigation Summary Power Conversion Devices 2

3 Delivering CS s to Multiple Industries Cellular Products Group Amplifiers and Switches Transmit Modules RF Platforms ASMs and SFMs RF Power Management ICs Compound Semiconductor Group Leveraging industry-leading GaN and GaAs process technologies in products targeting non-rf market applications Multi-Markets Products Group Broadband CATV Wireless Infrastructure/P2P Smart Energy/AMI Aerospace and Defense High Performance WiFi Custom Foundry Services Power Conversion Devices 3

4 A long-standing commitment to fulfilling the GaN promise Fundamental GaN R&D Begins at Cornell/RF Nitro RFMD Acquires GaN Start-up RF Nitro GaN Process Lock and Technology Transfer to High Volume MFG Begins 1st GaN RF Technology Production Qualified 2nd GaN RF Technology (high linearity) Production Qualified GaN for Power Electronics Effort Begins RFMD Announces rgan-hv TM technology for efficiency sensitive power conversion applications up to 900V May, 2012 Power Conversion Devices 4

5 Custom Foundry Services OPEN FOUNDRY FOR ADVANCED III- V SEMICONDUCTOR TECHNOLOGY GaAs Process Technologies FD25 low-noise phemt FD30 high-power phemt FET1H switching phemt FET2 E/D phemt RD30 power phemt Greensboro Compound HBT8 rugged InGaP GaN The World s First Process Technologies 6- GaN 1 high RF power broadband GaN 2 high linearity broadband inch rgan-hv high voltage IPC 3 for high power Semiconductor GaN Fabrication on a SiC wafer Power Conversion Devices 5

6 Technology Options On-Resistance FOM GaN Technology pushing into SiC FOM limits at high voltages FOM Main Challenges Rds(on),sp and associated dynamic effects Increase BV field strength Maintain performance and yield at larger die size High Reliability BV-Rdson not the only FOM: switching speed, capacitances, enabling features Cost? Si substrates? Power Conversion Devices 6

7 RFJS3006F PRODUCT HIGHLIGHTS Package: Isolated TO247 Features Advanced High Voltage GaN Technology Normally-off Insulated Gate Very low R DS(ON) Reduces Conduction Losses Ultra-Low Switching Losses Internal Ultra-Fast FW Diode Low-Output Capacitance UL Recognized Isolation (of the TO247 Mounting Tab) V DS I D(25 C) R DS(ON) E ON /E OFF Freewheeling Diode Function Parameter 650V 30A 45mΩ 30µJ/20µJ t rr 12ns Q rr 37nC Fast Version Applications Solar Inverters AC-to-DC Switching Power Supplies High Voltage DC-to-DC Converters Uninterruptable Power Supplies Battery Chargers Motor Drives 2013 Confidential Material. Please do not distribute. Power Conversion Devices 7

8 RFMD RFJS3006F: 45mΩ TO-247 SWITCHING WAVEFORMS Rg=1Ω, Vgs=12~0V, I Doff =20A No oscillations even at very high dv/dt, di/dt Power Conversion Devices 8

9 RFJS3006Q: Lowest Switching Losses of any 650V rated GaN or SJ Power Switch Switching loss (uj) vs 650V GaN and C7 Commercial GaN Cascode 2013 Confidential Material. Please do not distribute. Power Conversion Devices 9

10 RFJS3006: High Power Product Comparison to closes competitor datasheet ratings Parameter Infineon Coolmos ST Micro MDmesh RFMD GaN SSFET rgan Advantage Part Number IPW65R045C7 STW55NM60ND Fast Diode RFSJ3006F - Breakdown Voltage 650 V 650 V 650 V Same On-Resistance 45 mω 60 mω 45 mω - 100V 100 pf 210 pf 90 pf 1.2-4X lower Coss 400V 288 pf 900 pf 58 pf 2.5X lower Eoss Qg,typ 93 nc 190 nc 31 nc 3-5X lower Qg Eon / Eoff 90uJ / Rg=10Ω - 20uJ / 20A; Rg=1Ω 2X-5X lower switching energies Qrr 13 uc 1.8 uc 0.04 uc 50X low Qrr trr 250 ns 200 ns 12 ns 20-40X faster trr Irrm 15 di/dt = 100 A/us 18 di/dt = 100A/us 6 A di/dt = 1000 A/us 2-5X 10X higher di/dt Power Conversion Devices 10

11 RFJS3006Q: 3L TO-247 Design HIGH POWER PRODUCT Dynamic on-resistance Can cause significant system level efficiency degradation Difficult to measure accurately May contain many time constants Dynamic Resistance During Operation Lot 52: > 3X Measurements taken in resistive switching measurement board Custom voltage limiting circuitry Held at dc bias for > 2min prior to measurement Lot 52: > 1.7X Lot 78: ~ 1.3X Lot 90: ~ 1.1X Power Conversion Devices 11

12 2.4kW Boost Converter HIGH EFFICIENCY PERFORMANCE V IN = 220V, V OUT =386V, fsw=133khz η = 99% 2013 Confidential Material. Please do not distribute. Power Conversion Devices 12

13 1200V GaN:SiC Devices HIGH POWER PRODUCT 100mΩ / 1200V GaN:SiC 1500V Power Conversion Devices 13

14 GaN:Si Devices HIGH POWER PRODUCT 200mΩ / 1200V GaN:Si Leakage currents: 600V Power Conversion Devices 14

15 GaN:Si Devices GAN:SI DEVELOPMENT Excellent yield and breakdown characteristics for GaN:Si wafers 700V Breakdown Yield: 91% ~ 1200V Power Conversion Devices 15

16 2.6kV GaN HEMT ULTRA-HIGH VOLTAGE 1700V devices feasible with lateral GaN technology BV = 2.6kV Power Conversion Devices 16

17 High Voltage GaN Reliability GaN Reliability Demonstrated Reliability Key for Technology Acceptance Gate Reliability, Electromigration, Surface Passivation But GaN lifetime modeling like Si devices: Projected FIT ~10-5 Use Voltage (V) Use Tj ( o C) Power Conversion Devices 17

18 GaN Application Level Reliability Testing Key to satisfying customer new technology reliability averseness HTOL: SEPIC Converter Application level reliability: 2000hrs+ Voltage / Current Stress = 400V/20A Switching frequency = 109kHz No performance degradation Rds,on (Ohms) HTOL Results Hours 1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 Drain 400V (A) Page 18 Power Conversion Devices 18

19 Summary GAN POWER 650V GaN HEMT technology enables significant efficiency advantages over existing Si superjunction technology Hard switching / soft switching topologies Further enable new topologies (totem pole PFC, matrix converters..) Dynamic on-resistance issues have been minimized Do not pose roadblock for wide market adoption Higher voltage GaN devices are in the future 1200V and potentially 1700V devices for specific applications Reliability and qualification data show high reliability is possible More work needed in understanding fundamental activation physics 2013 Confidential Material. Please do not distribute. Power Conversion Devices 19