5STF 18F1210 Old part no. TR 918F

Transcription

1 5STF 18F121 Medium Frequency Thyristor Properties 5STF 18F121 Old part no. TR 918F Key Parameters Amplifying gate V DRM, V RRM = 1 2 V High operational capability I TAV = A Optimized turn-on and turn-off parameters I TSM = 22. ka High operating frequency V TO = V Applications r T =.94 m Power switching applications t q = 1. µs Types V RRM, V DRM 5STF 18F121 5STF 18F V 1 V Conditions: T j = C, half sine waveform, f = 5 Hz, note 1 Mechanical Data F m Mounting force 22 ± 2 kn m Weight.48 kg D S D a Surface creepage distance Air strike distance 25 mm 13 mm Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, Praha 4, Czech Republic tel.: , TS - TR/229/7c Feb-14 1 of 15

2 5STF 18F121 Maximum Ratings Maximum Limits Unit V RRM V DRM Repetitive peak reverse and off-state voltage T j = C, note 1 5STF 18F121 5STF 18F V I TRMS I TAVm I TSM I 2 t (di T /dt) cr (dv D /dt) cr RMS on-state current T c = 7 C, half sine waveform, f = 5 Hz Average on-state current T c = 7 C, half sine waveform, f = 5 Hz Peak non-repetitive surge half sine pulse, V R = V Limiting load integral half sine pulse, V R = V Critical rate of rise of on-state current I T = I TAVm, half sine waveform, f = 5 Hz, V D = 2/3 V DRM, t r =.3 µs, I GT = 2 A Critical rate of rise of off-state voltage t p = 1 ms t p = 8.3 ms t p = 1 ms t p = 8.3 ms A A A A 2 s 8 A/µs 1 V/µs V D = 2/3 V DRM P GAVm Maximum average gate power losses 3 W I FGM Peak gate current 1 A V FGM Peak gate voltage 12 V V RGM Reverse peak gate voltage 1 V T jmin - T jmax Operating temperature range C T stgmin - T stgmax Storage temperature range C Unless otherwise specified T j = 125 C Note 1: De-rating factor of.13% V RRM or V DRM per C is applicable for T j below 25 C TS - TR/229/7c Feb-14 2 of 15

3 5STF 18F121 Characteristics Value Unit min. typ. max. V TM Maximum peak on-state voltage I TM = 2 A 1.56 V V T Threshold voltage V r T I DM I RM t gd t q1 Q rr I rrm Slope resistance I T1 = A, I T2 = A Peak off-state current V D = V DRM Peak reverse current V R = V RRM Delay time T j = 25 C, V D =.4 V DRM, I TM = I TAVm, t r =.3 µs, I GT = 2 A Turn-off time I T = 1 A, di T /dt = -5 A/µs,V R = 1 V, V D = 2/3 V DRM, dv D /dt = 5 V/µs Recovery charge the same conditions as at t q1 Reverse recovery current the same conditions as at t q1.94 m 15 ma 15 ma 2. µs 1. µs 38 µc 13 A I H Holding current T j = 25 C T j = 125 C I L Latching current T j = 25 C T j = 125 C ma ma V GT Gate trigger voltage V D = 12V, I T = 4 A T j = - 4 C T j = 25 C T j = 125 C V I GT Gate trigger current V D = 12V, I T = 4 A T j = - 4 C T j = 25 C T j = 125 C ma Unless otherwise specified T j = 125 C TS - TR/229/7c Feb-14 3 of 15

4 Transient thermal impedance junction to case Z thjc ( K/kW ) 5STF 18F121 Thermal Parameters Value Unit R thjc R thch Thermal resistance junction to case double side cooling anode side cooling 25. cathode side cooling 45. Thermal resistance case to heatsink double side cooling single side cooling K/kW 4. K/kW Transient Thermal Impedance Analytical function for transient thermal impedance 4 Z R ( 1 exp( t / )) thjc i 1 Conditions: F m = 22 ± 2 kn, Double side cooled i Correction for periodic waveforms 18 sine: add 1.3 K/kW 18 rectangular: add 1.8 K/kW 12 rectangular: add 3. K/kW 6 rectangular: add 5.1 K/kW i i i ( s ) R i ( K/kW ) Square wave pulse duration t d ( s ) Fig. 2 Dependence transient thermal impedance junction to case on square pulse TS - TR/229/7c Feb-14 4 of 15

5 I T ( A ) 5STF 18F121 On-State Characteristics 12 T j = 25 C 125 C V T ( V ) Fig. 3 Maximum on-state characteristics Gate Trigger Characteristics VG ( V ) 6 5 DC VG ( V ) V GTmax 4-4 C 1 5 µs C 8 1 ms 6 I GTmax C 4 1 ms VGTmin I G ( A ) I GTmin 2 DC I G ( A ) Fig. 4 Gate trigger characteristics Fig. 5 Maximum peak gate power loss TS - TR/229/7c Feb-14 5 of 15

6 I TSM ( ka ) 5STF 18F121 Surge Characteristics I TSM ( ka ) 25 4 i 2 dt (1 6 A 2 s) 2 i 2 dt V R = V I TSM V R.5 V DRM 1 1 t ( ms ) 1 Fig. 6 Surge on-state current vs. pulse length, half sine wave, single pulse, Number n of cycles at 5 Hz Fig. 7 Surge on-state current vs. number of pulses, half sine wave, T j = T jmax V R = V, T j = T jmax TS - TR/229/7c Feb-14 6 of 15

7 5STF 18F121 Power Loss and Maximum Case Temperature Characteristics PT ( W ) 35 3 = DC PT ( W ) 35 3 = DC I TAV ( A ) Fig. 8 On-state power loss vs. average on-state TC ( C ) current, sine waveform, f = 5 Hz, T = 1/f I TAV ( A ) Fig. 9 On-state power loss vs. average on-state TC ( C ) current, square waveform, f = 5 Hz, T = 1/f DC 8 DC = I TAV ( A ) 6 = I TAV ( A ) Fig. 1 Max. case temperature vs. aver. on-state current, sine waveform, f = 5 Hz, T = 1/f Fig. 11 Max. case temperature vs. aver. on-state current, square waveform, f = 5 Hz, T = 1/f Note 2: Figures number 8 11 have been calculated without considering any turn-on and turn-off losses. They are valid for f = 5 or 6 Hz operation. TS - TR/229/7c Feb-14 7 of 15

8 5STF 18F121 Turn-off Time, Parameter Relationship Maximum values of turn-off time at application specific conditions are given by using this formula: t q t q1 t t q q1 tq tq ( T j ) ( dv D / dt ) ( dit / dt ) t t q1 q1 tq / tq1 ( - ) 1..9 where: t q1 is turn-off time at standard conditions, see section "Characteristics" tq ( T j ) tq1 tq ( dv D / dt ) tq1 tq ( dit / dt ) tq1 is factor to be taken from fig. 12 is factor to be taken from fig. 13 is factor to be taken from fig T j ( C ) Fig. 12 Normalised maximum turn-off time vs. junction temperature tq / tq1 ( - ) tq / tq1 ( - ) dv D /dt ( V/µs ) di T /dt ( A/µs ) Fig. 13 Normalised maximum turn-off time vs. rate of rise of off-state voltage Fig. 14 Normalised maximum turn-off time vs. rate of fall of on-state current TS - TR/229/7c Feb-14 8 of 15

9 5STF 18F121 Turn-on Characteristics 6 ig (t), vt (t), it (t) V D.9 V D.5 I TM di T /dt i T (t) 25 I TM Won ( J ) I TM t gd.1 V D i G (t) v T (t) 1 3 t t gt t d di T /dt ( A/µs ) Fig. 15 Typical waveforms and definition of symbols at turn-on of a thyristor Fig. 16 Maximum turn-on energy per pulse vs. rate of rise on-state current, T j = T jmax TS - TR/229/7c Feb-14 9 of 15

10 5STF 18F121 Turn-off Characteristics vt (t), it (t) v T (t) V D Qrr ( µc ) 1 I TM i T (t) - di T /dt dv D /dt 1 t q I rrm 1 Q rr V R I TM = 2 A 1 A 5 A 1-6 t di T /dt ( A/µs ) Fig. 17 Typical waveforms and definition of symbols at turn-off of a thyristor, inductive switching without RC snubber Fig. 18 Max. recovered charge vs. rate of fall on-state current, trapezoid pulse, V R = 1 V, T j = T jmax IrrM ( A ) 1 Woff ( J ) V R = 2/3 V DRM I TM = 2 A 1 A 5 A di T /dt ( A/µs ) V 2 V 1 V di T /dt ( A/µs ) Fig. 19 Max. reverse recovery current vs. rate of fall on-state current, trapezoid pulse, V R = 1 V, T j = T jmax Fig. 2 Maximum turn-off energy per pulse vs. rate of fall on-state current, trapezoid pulse, inductive switching without RC snubber, I TM = 2 A, T j = T jmax TS - TR/229/7c Feb-14 1 of 15

11 5STF 18F121 Frequency Ratings = = Fig. 21 Average on-state current vs. frequency, trapezoid waveform, T C = 7 C, di T /dt = 1 A/µs, V R = 1 V Fig. 22 Maximum on-state current vs. frequency, trapezoid waveform, T C = 7 C, di T /dt = 1 A/µs, V R = 1 V = = Fig. 23 Average on-state current vs. frequency, trapezoid waveform, T C = 7 C, di T /dt = 1 A/µs, V R = 2/3 V DRM Fig. 24 Maximum on-state current vs. frequency, trapezoid waveform, T C = 7 C, di T /dt = 1 A/µs, V R = 2/3 V DRM TS - TR/229/7c Feb of 15

12 5STF 18F121 Frequency Ratings = = Fig. 25 Average on-state current vs. frequency, trapezoid waveform, T C = 7 C, di T /dt = 5 A/µs, V R = 1 V Fig. 26 Maximum on-state current vs. frequency, trapezoid waveform, T C = 7 C, di T /dt = 5 A/µs, V R = 1 V = = Fig. 27 Average on-state current vs. frequency, trapezoid waveform, T C = 7 C, di T /dt = 5 A/µs, V R = 2/3 V DRM Fig. 28 Maximum on-state current vs. frequency, trapezoid waveform, T C = 7 C, di T /dt = 5 A/µs, V R = 2/3 V DRM TS - TR/229/7c Feb of 15

13 5STF 18F121 Frequency Ratings = = Fig. 29 Average on-state current vs. frequency, trapezoid waveform, T C = 9 C, di T /dt = 1 A/µs, V R = 1 V Fig. 3 Maximum on-state current vs. frequency, trapezoid waveform, T C = 9 C, di T /dt = 1 A/µs, V R = 1 V = = Fig. 31 Average on-state current vs. frequency, trapezoid waveform, T C = 9 C, di T /dt = 1 A/µs, V R = 2/3 V DRM Fig. 32 Maximum on-state current vs. frequency, trapezoid waveform, T C = 9 C, di T /dt = 1 A/µs, V R = 2/3 V DRM TS - TR/229/7c Feb of 15

14 5STF 18F121 Frequency Ratings = = Fig. 33 Average on-state current vs. frequency, trapezoid waveform, T C = 9 C, di T /dt = 5 A/µs, V R = 1 V Fig. 34 Maximum on-state current vs. frequency, trapezoid waveform, T C = 9 C, di T /dt = 5 A/µs, V R = 1 V = = Fig. 35 Average on-state current vs. frequency, trapezoid waveform, T C = 9 C, di T /dt = 5 A/µs, V R = 2/3 V DRM Fig. 36 Maximum on-state current vs. frequency, trapezoid waveform, T C = 9 C, di T /dt = 5 A/µs, V R = 2/3 V DRM TS - TR/229/7c Feb of 15

15 5STF 18F121 Notes: TS - TR/229/7c Feb of 15