Absolute Maximum Ratings Parameter Max. Units

Transcription

1 PD INSULATED GATE BIPOLAR TRANSISTOR IRG7PH5UPbF IRG7PH5U-EP Features Low V CE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 C Square RBSOA 1% of the parts tested for I LM Positive V CE (ON) temperature co-efficient Tight parameter distribution Lead -Free G C E n-channel V CES = 12V I C = 9A, T C = 1 C T J(max) =175 C V CE(on) typ. = 1.7V Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low V CE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation Applications U.P.S Welding Solar inverter Induction heating C G C E TO-247AC IRG7PH5UPbF G C E TO-247AD IRG7PH5U-EP G C E Gate Collector Emitter C Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 12 V I T C = 25 C Continuous Collector Current (Silicon Limited) 14 I T C = 1 C Continuous Collector Current (Silicon Limited) 9 I NOMINAL Nominal Current 5 A I CM Pulse Collector Current, V GE = 15V 15 I LM Clamped Inductive Load Current, V GE = 2V c 2 V GE Continuous Gate-to-Emitter Voltage ±3 V P T C = 25 C Maximum Power Dissipation 556 P T C = 1 C Maximum Power Dissipation 278 W T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 1 lbf in (1.1 N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC f.27 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface) f.24 C/W R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) /28/21

2 IRG7PH5UPbF/IRG7PH5U-EP Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 12 V V GE = V, I C = 1µA e V (BR)CES / T J Temperature Coeff. of Breakdown Voltage 1. V/ C V GE = V, I C = 1mA (25 C-15 C) e I C = 5A, V GE = 15V, T J = 25 C d V CE(on) Collector-to-Emitter Saturation Voltage 2. V I C = 5A, V GE = 15V, T J = 15 C d 2.1 I C = 5A, V GE = 15V, T J = 175 C d V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 2.mA V GE(th) / TJ Threshold Voltage temp. coefficient -17 mv/ C V CE = V GE, I C = 1mA (25 C C) gfe Forward Transconductance 55 S V CE = 5V, I C = 5A, PW = 8µs I CES Collector-to-Emitter Leakage Current 2. 1 V GE = V, V CE = 12V µa 17 V GE = V, V CE = 12V, T J = 175 C I GES Gate-to-Emitter Leakage Current ±2 na V GE = ±3V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = 5A d Q ge Gate-to-Emitter Charge (turn-on) 4 6 nc V GE = 15V Q gc Gate-to-Collector Charge (turn-on) V CC = 6V E on Turn-On Switching Loss I C = 5A, V CC = 6V, V GE = 15V d E off Turn-Off Switching Loss µj R G = 5.Ω, L = 2µH,T J = 25 C E total Total Switching Loss Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time Diode clamp the same as IRG7PH5UDPbF t r Rise time 4 6 ns t d(off) Turn-Off delay time 43 5 t f Fall time E on Turn-On Switching Loss 56 I C = 5A, V CC = 6V, V GE =15Vd E off Turn-Off Switching Loss 39 µj R G =5.Ω, L=2µH, T J = 175 C E total Total Switching Loss 95 Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 3 Diode clamp the same as IRG7PH5UDPbF t r Rise time 45 ns t d(off) Turn-Off delay time 5 t f Fall time 21 C ies Input Capacitance 6 pf V GE = V C oes Output Capacitance 19 V CC = 3V C res Reverse Transfer Capacitance 13 f = 1.Mhz I C = 2A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 96V, Vp =12V Rg = 5.Ω, V GE = +2V to V, T J =175 C Notes: V CC = 8% (V CES ), V GE = 2V, L = 2µH, R G = 5.Ω. Pulse width 4µs; duty cycle 2%. ƒ Refer to AN-186 for guidelines for measuring V (BR)CES safely. R θ is measured at T J of approximately 9 C. 2

3 I C (A) I C (A) Load Current ( A ) I C (A) P tot (W) Square Wave: V CC IRG7PH5UPbF/IRG7PH5U-EP Duty cycle : 5% Tj = 15 C Tc = 1 C Vcc = 6V Gate drive as specified Power Dissipation = 183W 4 I 2 Diode as specified f, Frequency ( khz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) T C ( C) Fig. 2 - Maximum DC Collector Current vs. Case Temperature T C ( C) Fig. 3 - Power Dissipation vs. Case Temperature 1 1 1µsec 1µsec 1 1 1msec DC 1.1 Tc = 25 C Tj = 175 C Single Pulse Fig. 4 - Forward SOA T C = 25 C, T J 175 C; V GE =15V Fig. 5 - Reverse Bias SOA T J = 175 C; V GE =2V 3

4 I CE (A) I CE (A) I CE (A) IRG7PH5UPbF/IRG7PH5U-EP V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V 1 5 V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V Fig. 6 - Typ. IGBT Output Characteristics T J = -4 C; tp = 3µs Fig. 7 - Typ. IGBT Output Characteristics T J = 25 C; tp = 3µs V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V I CE = 25A I CE = 5A I CE = 1A Fig. 8 - Typ. IGBT Output Characteristics T J = 175 C; tp = 3µs V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C I CE = 25A I CE = 5A I CE = 1A 8 6 I CE = 25A I CE = 5A I CE = 1A V GE (V) V GE (V) Fig. 1 - Typical V CE vs. V GE T J = 25 C Fig Typical V CE vs. V GE T J = 175 C 4

5 Swiching Time (ns) Swiching Time (ns) Energy (µj) I CE, Collector-to-Emitter Current (A) 2 IRG7PH5UPbF/IRG7PH5U-EP Energy (µj) 1 8 E ON 1 T J = 25 C T J = 175 C E OFF V GE, Gate-to-Emitter Voltage (V) Fig. 12- Typ. Transfer Characteristics V CE = 5V; tp = 3µs I C (A) Fig Typ. Energy Loss vs. I C T J = 175 C; L = 2µH; V CE = 6V, R G = 5.Ω; V GE = 15V 1 td OFF E OFF 12 t F E ON 6 td ON 4 t R I C (A) Fig Typ. Switching Time vs. I C T J = 175 C; L = 2µH; V CE = 6V, R G = 5.Ω; V GE = 15V Rg (Ω) Fig Typ. Energy Loss vs. R G T J = 175 C; L = 2µH; V CE = 6V, I CE = 5A; V GE = 15V 1 td OFF t F 1 t R td ON R G (Ω) Fig Typ. Switching Time vs. R G T J = 175 C; L = 2µH; V CE = 6V, I CE = 5A; V GE = 15V 5

6 Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) IRG7PH5UPbF/IRG7PH5U-EP 1 16 Cies V CES = 6V V CES = 4V Coes 6 Cres Q G, Total Gate Charge (nc) Fig Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig. 18- Typical Gate Charge vs. V GE I CE = 5A 1 Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Ri ( C/W) τi (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC R 4 R 4 τ 4 τ 4 τ C τ 6

7 IRG7PH5UPbF/IRG7PH5U-EP L L 1K DUT VCC 8 V + - Rg DUT VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT R = VCC ICM L -5V DUT VCC Rg DUT / DRIVER VCC Rg Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit C force 1K D1 22K C sense G force DUT.75µF E sense E force Fig.C.T.5 - BVCES Filter Circuit 7

8 IRG7PH5UPbF/IRG7PH5U-EP 12 tf tr TEST CURRENT 1 8 VCE (V) % I CE 5% V CE 5% I CE ICE (A) VCE (V) % test current 9% tes t current 5% V CE ICE (A) -2 Eoff Loss -2-2 Eon Loss time(µs) time (µs) Fig. WF1 - Typ. Turn-off Loss T J = 175 C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss T J = 175 C using Fig. CT.4 8

9 IRG7PH5UPbF/IRG7PH5U-EP TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information GPBP,5)3( + 96U@8P9@ I r)qv h r iy yv rƒ v v v qvph r GrhqA rr 6TT@H7G` GPU8P9@ `@6S 2! X@@F"$ GDI@C TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at 9

10 IRG7PH5UPbF/IRG7PH5U-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information (;$3/( 7+,6,6$1,5*3%.'( :,7+$66(%/< /27&2'( $66(%/('21::,17+($66(%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH 3$5718%(5,17(51$7,21$/ 5(&7,),(5 /2*2 Ã+ ÃÃÃÃÃÃÃÃÃÃÃ '$7(&2'( $66(%/< <($5 /27&2'( :((. /,1(+ TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information. 7/21 1