Power Converter Systems

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Meagan Stephens
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1 Power Converer Syem Graduae Coure EE847 Bin Wu PhD, PEng Profeor ELCE Deparmen Ryeron Univeriy Conac Info Office: ENG38 Tel: (46) ex: hp:// Ryeron Campu Topic High-Power Semiconducor Device

2 High-Power Semiconducor Device Lecure Topic Power Diode SCR Thyrior Gae Turn-Off Thyrior (GTO) Inegraed Gae Commuaed Thyrior (GCT) Inulaed Gae Bipolar Tranior (IGBT) Swich Serie Operaion 3 High-Power Semiconducor Device Device Raing V (V) SCR V/5A (Miubihi) SCR: GTO/GCT: IGBT: 7MVA 36MVA 6MVA V/6A (Eupec) 45V/9A (Miubihi) 65V/5A (Miubihi) 75V/65A (Eupec) GTO/GCT 33V/A (Eupec) 5V/8A (Fuji) IGBT 6V/3A (ABB) 7V/36A (Eupec) 65V/4A 6V/6A (ABB) (Miubihi) 48V 5A (Wecode) I (A) 4

3 Power Diode 45V/8A pre pack and 7V/A module diode 5 Heaink Aembly Power Diode P P Heaink P A B V d A A C N (a) Diode Recifier (b) Pre pack (c) Module Pre pack device: Double ided cooling Low aembly co and high power deniy Preferred choice for high volage high power applicaion N N 6 3

4 SCR Thyrior 45V/8A and 45V/5A SCR 7 Swiching Characeriic SCR Thyrior.I GM I GM i T i T v T.9I D.I D I D I rr rr Q rr.i rr v T V D.V D V on don r on off 8 4

5 Main Specificaion SCR Thyrior Maximum V DRM V RRM I TAVM I TRMS - Raing V V 5A 36A - Swiching Characeriic Turn-on Time 4µ on V/5A SCR Thyrior Turn-off Time µ di T /d dv T /d Q rr = = A / µ V / µ 7 µ C off V DRM Repeiive peak off-ae volage V RRM Repeiive peak revere volage I TAVM Maximum average on-ae curren I RRMS Maximum rm on-ae curren rr I rr Q rr = Revere recovery Charge Par number FT5AU-4 (Miubihi) 9 Gae Turn-Off (GTO) Thyrior 45V/8A and 45V/5A GTO 5

6 Gae Turn-Off (GTO) Thyrior Symmerical veru Aymmerical GTO Type Aymmerical GTO Symmerical GTO Blocking Volage V << V RRM V V RRM DRM DRM Example (6V GTO) V DRM = 6V V RRM = V V DRM = 6V V RRM = 65V V DRM - Maximum repeiive peak (forward) off-ae volage V RRM - Maximum repeiive peak revere volage Applicaion For ue in volage ource inverer wih ani-parallel diode. For ue in curren ource inverer. Swiching Characeriic v, T i T Gae Turn-Off (GTO) Thyrior v T i T V D.9V D I D.9I D don r.v D doff.i D ail d / d f i T v T.I G M I G M.I G M d / d I G M 6

7 Gae Turn-Off (GTO) Thyrior Main Specificaion Maximum V DRM V RRM I TGQM I TAVM I TRMS - Raing 45V 7V 4A A 57A - Swiching Characeriic On-ae Volage Turn-on Swiching =.5µ don = 5.µ V 45V/4A Aymmerical GTO Thyrior r Turn-off Swiching = 5.µ doff = 3.µ f ae) 4. V a I T = 4A T ( on = 4 di T /d dv T /d d /d d /d 5A / µ V / µ 4A / µ 4 A / µ V DRM - Repeiive peak off-ae volage V RRM - Repeiive peak revere volage I TGQM - Repeiive conrollable on-ae curren I TAVM - Maximum average on-ae curren I RRMS - Maximum rm on-ae curren Par number - 5SGA 4L45 (ABB) 3 Inegraed Gae Commuaed Thyrior (GCT) 65V/5A Symmerical GCT GCT = Improved GTO + Inegraed Gae + Ani-parallel Diode (opional) 4 7

8 Inegraed Gae Commuaed Thyrior GCT Claificaion Type Ani-parallel Diode Blocking Volage Aymmerical GCT Excluded V RRM << VDRM Revere Conducing GCT Symmerical GCT (Revere Blocking) Example (6V GCT) V DRM = 6V V RRM = V Included V V DRM = 6V No required RRM V V RRM DRM V DRM - Maximum repeiive peak forward off-ae volage V RRM - Maximum repeiive peak revere volage V DRM = 6V V RRM = 65V Applicaion For ue in volage ource inverer wih ani-parallel diode. For ue in volage ource inverer. For ue in curren ource Inverer. 5 Inegraed Gae Commuaed Thyrior Swiching Characeriic v, i T T vt i T.9V D.9I D V D.V D I D.4I D don r doff f i T v T d / d v G d / d v G 6 8

9 Inegraed Gae Commuaed Thyrior Main Specificaion Maximum V DRM V I RRM TQRM I TAVM I TRMS - Raing 6V V 6A A 3A - Swiching Characeriic Turn-on Swiching don <.µ <.µ r 6V/6A Aymmerical GCT Turn-off Swiching < 3.µ doff f - N/A di T /d dv T /d d /d d /d A / µ 3V / µ A / µ On-ae VT ( on ae) < 4V a I T = 6A Volage V DRM - Repeiive peak off-ae volage V RRM - Repeiive peak revere volage I TGRM - Repeiive conrollable on-ae curren I TAVM - Maximum average on-ae curren, A / µ I RRMS - Maximum rm on-ae curren Par number FGC6AXDS (Miubihi) 7 Inulaed Bipolar Tranior (IGBT) 7V/A and 33V/A IGBT module 8 9

10 Inulaed Bipolar Tranior (IGBT) IGBT Characeriic i C C v G G v CE +5V E I C V GE5 v GE +5V 9% V GE 4 V GE 3 V GE i C 9% V V GE V CE % don r doff f Saic V-I Characeriic Swiching characeriic 9 Inulaed Bipolar Tranior (IGBT) Main Specificaion Maximum V CE I C I CM - Raing 33V A 4A - Swiching Characeriic don r doff f.35µ.7µ.7µ.µ Sauraion I CE a = 4.3V a I C = A Volage V CE - Raed collecor-emier volage I C - Raed dc collecor curren 33V/A IGBT I CM - Maximum repeiive peak collecor curren Par number FZ R33 KF (Eupec)

11 Device Serie Operaion Caue of Volage Imbalance S v S v S 3 v 3 Type Saic Volage Sharing Dynamic Volage Sharing Caue of Volage Imbalance I lk Device off-ae leakage curren T j Juncion emperaure Device Gae Driver don Turn-on delay ime doff Turn-off delay ime Q rr Revere recovery charge of ani-parallel diode Juncion emperaure T j GDon Gae driver urn-on delay ime GDoff Gae driver urn-off delay ime L wire Wiring inducance beween he he gae driver and he device gae Difference beween erie conneced device. Equal Volage Sharing Device Serie Operaion S, S, S 3 : S v S v R R C R v R v GTO, GCT or IGBT Volage Sharing: v = v = v 3 in eady ae and ranien v 3 S 3 R C R v Saic Volage Sharing: R v C Dynamic Volage Sharing: R and C

12 Device Serie Operaion Acive Overvolage Clamping (AOC) Acive Overvolage Clamping - Suiable for erie IGBT - No applicable o GCT Gae Signal Condiioning Amp Vm R g S v CE v in AOC V m v CE Gae Signal Condiioning Amp Vm R g S v CE i C v CE Aumpion: S i urned off earlier han S d V CE i clamed o V m due o acive clamping. 3 Summary Iem GTO IGCT IGBT Maximum wich power (Device V I ) 36MVA 36MVA 6MVA Acive di/d and dv/d conrol No No Ye Acive hor circui proecion No No Ye Turn-off (dv/d) nubber Required No required No required Turn-on (di/d) nubber Required Required No required Parallel connecion No No Ye Swiching peed Slow Moderae Fa Behavior afer derucion Shored Shored Open in mo cae On-ae loe Low Low High Swiching loe High Low Low Gae Driver Gae Driver Power Conumpion Complex, eparae Complex, inegraed Simple, compac High High Low 4

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Topic 1 Introduction Main Topics (Introduction)

Topic 1 Introduction Main Topics (Introduction) Advanced AC Drive Systems Bin Wu PhD, PEng Professor ELCE Department Ryerson University Contact Info Office: ENG328 Tel: (416) 979-5000 ext: 6484 Email: bwu@ee.ryerson.ca Counseling Hours Ryerson Campus,