MMBT5401 MMBT5401. PNP Epitaxial Silicon Transistor

Transcription

1 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E PNP Epitaxial Silicon Transistor B SOT-23 Mark: 2L Absolute Maximum Ratings* T a =25 C unless otherwise noted Symbol Parameter alue Units CEO Collector-Emitter oltage -150 CBO Collector-Base oltage -160 EBO Emitter-Base oltage -5.0 Collector Current - Continuous -600 ma T J, T STG Operating and Storage Junction Temperature Range -55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics B CEO Collector-Emitter Breakdown oltage * = -1.0mA, I B = B CBO Collector-Base Breakdown oltage = -100µA, I E = B EBO Emitter-Base Breakdown oltage I E = -10µA, = BO Collector Cutoff Current CB = -120, I E = 0 CB = -120, I E = 0, T a = 100 C I EBO Emitter Cutoff Current EB = -3.0, =0-50 na On Characteristics * h FE DC Current Gain = -1.0mA, CE = -5.0 = -10mA, CE = -5.0 = -50mA, CE = -5.0 CE (sat) Collector-Emitter Saturation oltage = -10mA, I B = -1.0mA = -50mA, I B = -5.0mA BE (sat) Base-Emitter Saturation oltage = -10mA, I B = -1.0mA = -50mA, I B = -5.0mA Small Signal Characterics f T Current Gain Bandwidth Product = -10mA, CE = -10, f = 100MHz * Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% na µa MHz C ob Output Capacitance CB = -10, I E = 0, f = 1MHz 6.0 pf N F Noise Figure = -250µA, CE = -5.0, R S = 1.0KΩ 8.0 db f = 10Hz to 15.7KHz 2004 Fairchild Semiconductor Corporation Rev. B1, August 2004

2 Thermal Characteristics T a =25 C unless otherwise noted P D Symbol Parameter Max. Units Total Device Dissipation Derate above 25 C mw mw/ C R θja Thermal Resistance, Junction to Ambient 357 C/W 2004 Fairchild Semiconductor Corporation Rev. B1, August 2004

3 Typical Characteristics h FE - TYPICAL PULSED CURRENT GAIN CE = 5 0 1E-4 1E COLLECTOR CURRENT (A) CESAT - COLLECTOR-EMITTER OLTAGE () β = COLLECTOR CURRENT (ma) Figure 1. Typical Pulsed Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation oltage vs Collector Current BESAT - BASE-EMITTER OLTAGE () COLLECTOR CURRENT (ma) Figure 3. Base-Emitter Saturation oltage vs Collector Current β = 10 BC(ON) - BASE-EMITTER ON OLTAGE () CE = COLLECTOR CURRENT (ma) Figure 4. Base-Emitter On oltage vs Collector Current I - COLLECTOR CURRENT (na) CBO CB= T A - AMBIENT TEMPERATURE ( C) Figure 5. Collector-Cutoff Current vs Ambient Temperature B CER - BREAKDOWN OLTAGE () Between Emitter-Base RESISTANCE (k Ω) Figure 6. Collector-Emitter Breakdown oltage with Resistance Between Emitter-Base 2004 Fairchild Semiconductor Corporation Rev. B1, August 2004

4 Typical Characteristics (Continued) CAPACITANCE (pf) C eb f = 1.0 MHz C cb 0 R - REERSE BIAS OLTAGE() P D - POWER DISSIPATION (mw) SOT TEMPERATURE ( o C) Figure 7. Input and Output Capacitance vs Reverse oltage Figure 8. Power Dissipation vs Ambient Temperature 2004 Fairchild Semiconductor Corporation Rev. B1, August 2004

5 Package Dimensions SOT ± ± REF 1.30 ± ~ ± ± ~ MIN 0.03~ REF ± ± ± REF Dimensions in Millimeters 2004 Fairchild Semiconductor Corporation Rev. B1, August 2004

6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet Series DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I 2 C i-lo ImpliedDisconnect Across the board. Around the world. The Power Franchise Programmable Active Droop ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes SILENT SWITCHER SMART START SPM Stealth 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET CX Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only Fairchild Semiconductor Corporation Rev. I11