90% Vge +Vge Same type device as D.U.T. Vce. td(off) t1 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining E off, t d(off), t f

Transcription

1 IRGPH5MD2 9% Vge +Vge Same type device as D.U.T. Vce 8% of Vce 43µF D.U.T. Ic % Vce Ic 9% Ic 5% Ic td(off) tf Fig. 8a - Test ircuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5µs Eoff = Vce ic dt t t Fig. 8b - Test Waveforms for ircuit of Fig. 8a, Defining E off, t d(off), t f t2 % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id dt = tx % Ic Vcc td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = ie dt Vce t t2 DUT VOLTAGE AND URRENT Vpk tx % Vcc Irr DIODE REVERSE REOVERY ENERGY % Irr DIODE REOVERY WAVEFORMS t4 Erec Vd id dt = t3 Vcc Fig. 8c - Test Waveforms for ircuit of Fig. 8a, Fig. 8d - Test Waveforms for ircuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr Refer to Section D for the following: Appendix H: Section D - page D- Fig. 8e - Macro Waveforms for Test ircuit Fig. 8a Fig. 9 - lamped Inductive Load Test ircuit Fig. 2 - Pulsed ollector urrent Test ircuit Package Outline 3 - JEDE Outline TO-247A Section D - page D t3 t4

2 IRGPH5MD2 3 4 V R= 2V T J = 25 T J = 25 V R = 2V T J = 25 T J = trr - (ns) I F = 32A I F = 6A I F = 8.A I RRM - (A) 2 I F = 32A I F = 6A I F = 8.A di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (A/µs) Fig. 5 - Typical Recovery urrent vs. di f /dt 2 V R = 2V T J = 25 T J = 25 V R= 2V T J = 25 T J = 25 9 Q RR - (n) 6 I F = 32A I F = 6A I F = 8.A di(rec)m/dt - (A/µs) I F =6A I F = 8.A I F = 32A 3 di f /dt - (A/µs) Fig. 6 - Typical Stored harge vs. di f /dt di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt -487

3 IRGPH5MD2 T otal S w itch ing Losses (m J) R G = 5 Ω T = 5 V = 9 6 V V G E = 5V I, olle ctor-to-e m itter urrent (A ) V G EE= 2 V T = 25 J S A F E O P E R A T IN G A R E A I, olle ctor-to-em itter urren t (A ) Fig. - Typical Switching Losses vs. ollector-to-emitter urrent. V E, o llector-to-e m itter V oltag e (V ) Fig. 2 - Turn-Off SOA Instantaneous Forward urrent - I F (A) T J = 5 T J = 25 T J = Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward urrent -486

4 IRGPH5MD2, a pa citan ce (pf ) oes ies res V G E = V, f = M H z ie s = g e + g c, ce SH O R T ED re s = g c o es = ce + g c V, Gate-to-Em itter Voltag e (V) G E V E = 4 V I = 2 3 A V E, ollector-to-em itter V oltage (V) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Q, Total Gate harge (n ) G Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V = 96V V GE = 5V T = 25 I = 23A T o ta l S w itch ing Los ses (m J) R G = 5 Ω V G E = 5V V = 9 6 V I = 46 A I = 23 A I = A 4.8 A R G, Gate Resistance (Ω) T, ase Tem perature ( ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. ase Temperature -485

5 IRGPH5MD2 M a xim um D ollector urrent (A ) V GE = 5V V E, ollector-to-em itter Voltage (V ) V G E = 5V 8 µs P U L S E W ID TH I = 4 6A I = 2 3A I = 2A T, ase Tem perature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature T, ase Tem perature ( ) Fig. 5 - ollector-to-emitter Voltage vs. ase Temperature T herm a l Resp on se (Z thj ). D = SING L E P U L S E (TH E R M A L R ES P O N S E ) 2. P e ak T J = P D M x Z th J + T t, R ectangular Pulse D uration (sec) N o tes :. D uty fa c tor D = t / t 2 PD M t t 2 Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-ase -484

6 IRGPH5MD2 25 Loa d u rren t (A ) 2 5 6% of rated v oltage D u ty c y cle : 5 % T J = 25 T s ink = 9 G a te drive as sp e c ifie d Turn-on losses include e ffe c ts of re v ers e re co ve ry P o we r Dissip atio n = 4 W 5. f, F re quency (kh z) Fig. - Typical Load urrent vs. Frequency (Load urrent = I RMS of fundamental) I, ollector-to-e m itter urre nt (A) 25 5 V GE = 5 V 2 µs P U L S E W ID T H V E, ollector-to-em itter V oltage (V) I, ollector-to-em itter u rrent (A ) V = V 5 µs P U L S E W ID TH V G E, G a te-to-e m itter V oltage (V) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics -483

7 IRGPH5MD2 Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 2 V V GE = V, I = 25µA V (BR)ES/ T J Temperature oeff. of Breakdown Voltage. V/ V GE = V, I =.ma V E(on) ollector-to-emitter Saturation Voltage I = 23A V GE = 5V 3. V I = 42A See Fig. 2, I = 23A, T J = 5 V GE(th) Gate Threshold Voltage V E = V GE, I = 25µA V GE(th) / T J Temperature oeff. of Threshold Voltage -3 mv/ V E = V GE, I = 25µA g fe Forward Transconductance 5 S V E = V, I = 23A I ES Zero Gate Voltage ollector urrent 25 µa V GE = V, V E = 2V 65 V GE = V, V E =2V, T J = 5 V FM Diode Forward Voltage Drop V I = 6A See Fig I = 6A, T J = 5 I GES Gate-to-Emitter Leakage urrent ± na V GE = ±2V Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) 89 3 I = 23A Q ge Gate - Emitter harge (turn-on) n V = 4V Q gc Gate - ollector harge (turn-on) See Fig. 8 t d(on) Turn-On Delay Time T J = 25 t r Rise Time 4 ns I = 23A, V = 96V t d(off) Turn-Off Delay Time 5 77 V GE = 5V, R G = 5.Ω t f Fall Time Energy losses include "tail" and E on Turn-On Switching Loss 3. diode reverse recovery. E off Turn-Off Switching Loss 8. mj See Fig. 9,,, 8 E ts Total Switching Loss 7 t sc Short ircuit Withstand Time µs V = 72V, T J = 25 V GE = 5V, R G = 5.Ω t d(on) Turn-On Delay Time 86 T J = 5, See Fig. 9,,, 8 t r Rise Time 3 ns I = 23A, V = 96V t d(off) Turn-Off Delay Time 8 V GE = 5V, R G = 5.Ω t f Fall Time 92 Energy losses include "tail" and E ts Total Switching Loss 2 mj diode reverse recovery L E Internal Emitter Inductance 3 nh Measured 5mm from package ies Input apacitance 9 V GE = V oes Output apacitance 4 pf V = 3V See Fig. 7 res Reverse Transfer apacitance 24 ƒ =.MHz t rr Diode Reverse Recovery Time 9 35 ns T J = 25 See Fig T J = 25 4 I F = 6A I rr Diode Peak Reverse Recovery harge 5.8 A T J = 25 See Fig T J = 25 5 V R = 2V Q rr Diode Reverse Recovery harge n T J = 25 See Fig T J = 25 6 di/dt = 2A/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 2 A/µs T J = 25 See Fig. During t b 76 T J = 25 7 Notes: Repetitive rating; V GE =2V, pulse width limited by max. junction temperature. ( See fig. 2 ) V =8%(V ES ), V GE =2V, L=µH, R G = 5.Ω, ( See fig. 9 ) Pulse width 8µs; duty factor.% Pulse width 5.µs, single shot.

8 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Short circuit rated V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized for medium operating frequency ( to khz) See Fig. for urrent vs. Frequency curve G E n-channel PD A IRGPH5MD2 Short ircuit Rated Fast opack IGBT V ES = 2V V E(sat) GE = 5V, I = 23A Description o-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. Absolute Maximum Ratings Thermal Resistance TO-247A Parameter Max. Units V ES ollector-to-emitter Voltage 2 V T = 25 ontinuous ollector urrent 42 T = ontinuous ollector urrent 23 I M Pulsed ollector urrent 84 A I LM lamped Inductive Load urrent 84 I T = Diode ontinuous Forward urrent 6 I FM Diode Maximum Forward urrent 84 t sc Short ircuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 2 V P T = 25 Maximum Power Dissipation 2 W P T = Maximum Power Dissipation 78 T J Operating Junction and -55 to +5 T STG Storage Temperature Range Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting torque, 6-32 or M3 screw. lbf in (. N m) Parameter Min. Typ. Max. Units R θj Junction-to-ase - IGBT.64 R θj Junction-to-ase - Diode.83 /W R θs ase-to-sink, flat, greased surface.24 R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6 (.2) g (oz) -48 Revision

9 Note: For the most current drawings please refer to the IR website at: