1.5MHz Synchronous Step-down DC-DC Converter. Features

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1 General Description The is a high efficiency step-down DC-DC voltage converter. The chip operation is optimized by peak-current mode architecture with built-in synchronous power MOSFET switchers. The oscillator and timing capacitors are all built-in providing an internal switching frequency of 1.5MHz that allows the use of small surface mount inductors and capacitors for portable product implementations. Integrated Soft Start (SS), Under Voltage Lock Out (UVLO), Thermal Shutdown Detection (TSD) and Short Circuit Protection are designed to provide reliable product applications. The device is available in adjustable output voltage version ranging from 0.6V to 0.9 V IN when input voltage range is from 2.5V to 5.5V, and is able to deliver up to 1.2A. The is available in SOT-23-5 and DFN packages. Features High Efficiency Buck Power Converter Wide Input Voltage Range: 2.5V to 5.5V Adjustable Output Voltage: 0.6V to 0.9 V IN Low R DS(ON) Internal Switches:200mΩ (V IN =5V) Built-in Power Switches for Synchronous Rectification with High Efficiency Output Current: 1.2A Feedback Voltage: 600mV 1.5MHz Constant Frequency Operation Thermal Shutdown Protection Low Dropout Operation at 100% Duty Cycle No Schottky Diode Required Input Over Voltage Protection Output Over Voltage Protection Over Current Protection Applications Post DC-DC Voltage Regulation PDA and Notebook Computer SOT-23-5 DFN Figure 1. Package Types of 1

2 Pin Configuration K Package (SOT-23-5) DN Package (DFN-2 2-6) EN 1 5 FB GND 2 LX 3 4 VIN Figure 2. Pin Configuration of (Top View) Pin Description Pin Number SOT-23-5 DFN Pin Name Function 1 2 EN Chip enable pin. Active high 2 5 GND Ground pin 3 4 LX Switch output pin 4 3 VIN Power supply 5 6 FB Feedback voltage of output 1 NC No internal connection 2

3 Functional Block Diagram Figure 3. Functional Block Diagram of 3

4 Ordering Information - Circuit Type K: SOT-23-5 DN: DFN G1: Green TR: Tape & Reel Temperature Marking Package Part Number Packing Type Range ID SOT to 85ºC KTR-G1 GHW Tape & Reel DFN to 85ºC DNTR-G1 CJ Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage for the MOSFET Switch V IN 0 to 6.0 V Enable Input Voltage V EN -0.3 to V IN +0.3 V LX Pin Switch Current X 1.8 A Power Dissipation (on PCB, T A =25 C) P D SOT DFN Thermal Resistance (Junction to Ambient, SOT θ Simulation) JA ºC/W DFN Thermal Resistance (Junction to Case, θ Simulation) JC SOT ºC/W Operating Junction Temperature T J 155 ºC Storage Temperature T STG -55 to 150 ºC Operating Temperature T OP -40 to 85 ºC ESD (Machine Model) V MM 200 V ESD (Human Body Model) V HBM 2000 V Note 1: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. W 4

5 Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Input Voltage V IN V Operating Ambient Temperature T A ºC Operating Junction Temperature T J ºC Electrical Characteristics V IN =V EN =5V, =1.2V, V FB =0.6V, L=2.2µH, C IN =4.7µF, C OUT =10µF, T A =25 C, unless otherwise specified. Parameters Symbol Conditions Min Typ Max Unit Input Voltage Range V IN V Shutdown Current I OFF V EN =0 0.1 µa Active Current I ON V FB =0.55V 220 µa Regulated Feedback Voltage Regulated Output Voltage Accuracy V FB V / V IN =2.5V to 5.5V, I OUT =0 to 1.2A -3 3 % Peak Inductor Current I PK A Oscillator Frequency f OSC V IN =2.5V to 5.5V MHz PMOSFET R DS(ON) R DS(ON)P V IN =5V 200 mω NMOSFET R DS(ON) R DS(ON)N V IN =5V 200 mω EN High Level Input Voltage EN Low Level Input Voltage V EN_H 1.5 V V EN_L 0.4 V EN Input Current I EN 0.1 µa Soft Start Time t SS 400 µs Maximum Duty Cycle D MAX 100 % Under Voltage Lock Out Threshold V UVLO Rising 2.3 Falling 2.1 Hysteresis 0.2 Thermal Shutdown T SD Hysteresis=30 C C V 5

6 Typical Performance Characteristics V IN =5V, T A =25 C, unless otherwise noted. Efficiency (%) Output Current (A) V IN =5.0V =1.0V =1.2V =1.8V =2.5V =3.3V Regulated Feedback Voltage (V) Temperature ( o C) V IN =5.0V Figure 4. Efficiency vs. Output Current Figure 5. Regulated Feedback Voltage vs. Temperature _AC 10mV/div 2V/div 500mA/div _AC 10mV/div 2V/div 1A/div Time 800µs/div Time 400ns/div Figure 6. Output Ripple (I OUT =0A) Figure 7. Output Ripple (I OUT =1.2A) 6

7 Typical Performance Characteristics (Continued) V IN =5V, T A =25 C, unless otherwise noted. V EN 1V/div 500mA/div V EN 1V/div 500mA/div Time 200µs/div Time 800µs /div Figure 8. Enable Turn On (I OUT =1.2A) Figure 9. Enable Turn Off (I OUT =1.2A) 1V/div 1V/div 2A/div 2A/div Time 200µs/div Time 200µs /div Figure 10. Short Circuit Protection (I OUT =1.2A) Figure 11. Short Circuit Protection Recovery (I OUT =1.2A) 7

8 Typical Application Figure 12. Typical Applications of Table 1. Component Guide (V) R1 (kω) R2 (kω) L (µh)

9 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 2.820(0.111) 3.100(0.122) 0.100(0.004) 0.200(0.008) 0.200(0.008) 0.700(0.028) REF 0.950(0.037) TYP 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.500(0.020) (0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) 9

10 Mechanical Dimensions (Continued) DFN Unit: mm(inch) 10

11 IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any IMPORTANT NOTICE particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use other rights nor the rights of others. MAIN SITE - of Headquarters any its products or circuits. BCD Semiconductor Manufacturing - Wafer Limited Fab does not convey any license under its patent rights or BCD other (Shanghai) rights Micro-electronics nor the rights Limited of others. Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, , P. R.C. 800 Yishan Road, Shanghai , China Tel: , Fax: Tel: , Fax: MAIN SITE BCD REGIONAL - Headquarters Semiconductor SALES Manufacturing OFFICE Limited - Wafer BCD FabSemiconductor Manufacturing Limited Shenzhen BCD - Wafer Semiconductor Fab Office Manufacturing Limited Taiwan Shanghai Office - IC Design SIM-BCD (Taipei) Group Semiconductor Manufacturing Co., Ltd. Shanghai No. 1600, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Co., Limited Industrial Ltd., Shenzhen Park, , Office China BCD 800 Semiconductor Yi Advanced Shan Road, Analog (Taiwan) Shanghai Circuits Company , (Shanghai) China Limited Corporation Unit Tel: 800, , A Yi Room Shan Road, 1203,Skyworth Shanghai Fax: Bldg., , Gaoxin ChinaAve.1.S., Nanshan District 3F, No.17, Tel: F, Lane Zone 171, B, 900, Sec. 1491, 2, Yi Fax: Jiu-Zong Shan Road, Rd., Shanghai Nei-Hu 0008Dist., , Taipei(114), China Taiwan, R.O.C Shenzhen Tel: , 1491, China Fax: Tel: Tel: , Fax: Tel: REGIONAL , SALES OFFICE Fax: Fax: / REGIONAL Shenzhen OfficeSALES OFFICE Taiwan Office USA Office Taiwan Shenzhen Shanghai Office SIM-BCD Office (Hsinchu) Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Shanghai Unit A Semiconductor Room SIM-BCD 1203, Skyworth Semiconductor (Taiwan) Bldg., Company Gaoxin Manufacturing Limited Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office 8F, Advanced China No.176, Analog Sec. 2, Gong-Dao Circuits (Shanghai) 5th Road, Corporation East District Shenzhen Office USA BCD Office Taiwan Semiconductor Office (Taiwan) Company Limited Korea OfficeUSA BCD Office Semiconductor Corp. BCD 4F, Semiconductor 298-1, BCD Rui Semiconductor Guang Corp. Road, (Taiwan) Nei-Hu District, Company Taipei, BCD Limited Semiconductor BCD Semiconductor Huntwood Limited Korea Ave. Corporation Hayward, office Taiwan Kato 4F, Road, 298-1, Fremont, Rui Guang CA Road, 94538, Nei-Hu USA District, Room Taipei, , CA Digital-Empire 94544, Huntwood USA Ave. II, 486 Hayward, Sin-dong, HsinChu Room Tel: E, City 5F, Noble 300, Taiwan, 7951 Center, No.1006, R.O.C 3rd Fuzhong Road, Futian District, Shenzhen , China Tel: Tel: Taiwan 2808 Yeongtong-Gu, CA Tel Suwon-city, : 94544, U.S.A Gyeonggi-do, Korea Tel: Fax: , Fax: Fax: Fax: Fax: Tel: Fax: Tel: Tel Fax: : Fax:

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