= 25 C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage 20 V V GSS Gate-Source Voltage ±10
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1 N-Channel Enhancement Mode MOSFET Features Pin Description 2V/6A, R DS(ON) V GS =4.5V R DS(ON) V GS =2.5V Super High Dense Cell Design for Extremely Low R DS(ON) Reliable and Rugged TO-252 Package G D S Applications Top View of TO-252 Power Management in Computer, Portable Equipment and Battery Powered Systems. Ordering and Marking Information APM23N Handling Code Temp. Range Package Code Package Code U : TO-252 Operation Junction Temp. Range C :-55 to 15 C Handling Code TR : Tape & Reel APM23N U : APM23N XXXXX XXXXX - Date Code Absolute Maximum Ratings (T A = 25 C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage 2 V V GSS Gate-Source Voltage ±1 ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
2 Absolute Maximum Ratings (Cont.) (T A = 25 C unless otherwise noted) Symbol Parameter Rating Unit * I D Maximum Drain Current Continuous 2 A I DM Maximum Drain Current Pulsed 4 P D T A =25 C 5 Maximum Power Dissipation W T A =1 C 1 T J Maximum Junction Temperature 15 C T STG Storage Temperature Range -55 to 15 C R θja Thermal Resistance Junction to Ambient 5 C/W * Surface Mounted on FR4 Board, t 1 sec. Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Condition Static BV DSS I DSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current APM23N Min. Typ. Max. V GS =V, I DS =25µA 2 V Unit V DS =18V, V GS =V 1 µa V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25µA V I GSS Gate Leakage Current V GS =±1V, V DS =V ±1 na R DS(ON) a Drain-Source On-state V GS =4.5V, I DS =6A 35 4 Resistance V GS =2.5V, I DS =2A 38 5 V SD a Diode Forward Voltage I SD =4A, V GS =V V Dynamic b Q g Total Gate Charge V DS =1V, I DS = 5A 9 18 Q gs Gate-Source Charge V GS =4.5V, 3.6 Q gd Gate-Drain Charge 1 t d(on) Turn-on Delay Time 17 T r Turn-on Rise Time V DD =1V, I DS =1A, 15 t d(off) Turn-off Delay Time V GEN =4.5V, R G =.2Ω 45 T f Turn-off Fall Time 25 C iss Input Capacitance V GS =V 52 C oss Output Capacitance V DS =15V 11 C rss Reverse Transfer Capacitance Frequency=1.MHz 7 Notes a : Pulse test ; pulse width 3µs, duty cycle 2% b : Guaranteed by design, not subject to production testing mω nc ns pf 2
3 Typical Characteristics Output Characteristics Transfer Characteristics ID-Drain Current (A) VGS=2.5,3,4,5,6,7,8,9,1V 2V 1.5V ID-Drain Current (A) TJ=125 C TJ=25 C TJ=-55 C VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current VGS(th)-Threshold Voltage (V) (Normalized) IDS=25uA RDS(ON)-On-Resistance (Ω) VGS=2.5V VGS=4.5V Tj - Junction Temperature ( C) ID - Drain Current (A) 3
4 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature RDS(ON)-On-Resistance (Ω) ID=6A RDS(ON)-On-Resistance (Ω) (Normalized) VGS=4.5V ID=6A VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature ( C) Gate Charge Capacitance VGS-Gate-Source Voltage (V) VDS=1V ID=5A Capacitance (pf) Frequency=1MHz Ciss Coss Crss QG - Gate Charge (nc) VDS - Drain-to-Source Voltage (V) 4
5 Typical Characteristics Source-Drain Diode Forward Voltage Single Pulse Power IS-Source Current (A) 1 TJ=15 C TJ=25 C Power (W) VSD -Source-to-Drain Voltage (V) 1E Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1.1 Duty Cycle=.5 D=.2 D=.1 D=.5 D=.2 D=.1 SINGLE PULSE.1 1E-4 1E Square Wave Pulse Duration (sec) 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=5 C/W 3.TJM-TA=PDMZthJA 5
6 Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 A1 C Dim Millimeters Inches Min. Max. Min. Max. A A b b C C D E e H L.51.2 L L
7 Physical Specifications Terminal Material Solder-Plated Copper (Solder Material : 9/1 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-2 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Pre-heat temperature 183 C Peak temperature Time Classification Reflow Profiles Convection or IR/ VPR Convection Average ramp-up rate(183 C to Peak) 3 C/second max. 1 C /second max. Preheat temperature 125 ± 25 C) 12 seconds max Temperature maintained above 183 C 6 15 seconds Time within 5 C of actual peak temperature 1 2 seconds 6 seconds Peak temperature range 22 +5/- C or /- C C or /- C Ramp-down rate 6 C /second max. 1 C /second max. Time 25 C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume 35 mm³ pkg. thickness < 2.5mm and pkg. volume < 35mm³ Convection 22 +5/- C Convection /- C VPR C VPR /- C IR/Convection 22 +5/- C IR/Convection /- C 7
8 Reliability test program Test item Method Description SOLDERABILITY MIL-STD-883D C,5 SEC HOLT MIL-STD 883D Hrs 125 C PCT JESD-22-B, A Hrs, 1% RH, 121 C TST MIL-STD 883D C ~ 15 C, 2 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D W F Bo Ao D1 Ko T2 J A C B T1 Application A B C J T1 T2 W P E 33 ±3 1 ± 2 13 ±. 5 2 ± ± ± ±.1 TO-252 F D D1 Po P1 Ao Bo Ko t 7.5 ± ± ±.1 2. ± ±.1 1.4±.1 2.5±.1.3±.5 8
9 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel TO Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : Fax :
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