MMJT9435. Bipolar Power Transistors. PNP Silicon. POWER BJT I C = 3.0 AMPERES BV CEO = 30 VOLTS V CE(sat) = VOLTS

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1 Preferred Device Bipolar Power Transistors PNP Silicon Features PbFree Packages are Available Collector Emitter Sustaining oltage CEO(sus) = 3 I C = madc High DC Current Gain h FE = 125 I C =.8 Adc = 9 I C = 3. Adc Low Collector Emitter Saturation oltage CE(sat) =.275 I C = 1.2 Adc =.55 I C = 3. Adc SOT223 Surface Mount Packaging Epoxy Meets UL 25 in ESD Ratings: Human Body Model, 3B; > 8 Machine Model, C; > 4 POWER BJT I C = 3. AMPERES B CEO = 3 OLTS CE(sat) =.275 OLTS C 2,4 B 1 E 3 Schematic MARKING DIAGRAM SOT223 CASE 318E STYLE 1 AWW = Specific Device Code A = Assembly Location WW = Work Week PIN ASSIGNMENT 4 C B C E Top iew Pinout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 24 September, 24 Rev. 5 1 Publication Order Number: MMJT9435/D

2 MAXIMUM RATINGS (T C = 25 C unless otherwise noted) ÎÎ Rating Symbol alue Unit CollectorEmitter oltage CEO 3 CollectorBase oltage ÎÎ CB 45 ÎÎ Î EmitterBase oltage Î EB 6. Î Base Current Continuous Î I B Adc Î Collector Current Continuous Î I C 3. Collector Current Peak 5. Adc Î Total Power T C = 25 C Î P D 3. W Derate above 25 C 24 mw/ C Î Total P T A = 25 C mounted on 1 sq. (645 sq. mm) Collector pad on FR4 bd material 1.56 W Total P T A = 25 C mounted on 2 sq. (7.6 sq. mm) Collector pad on FR4 bd material.72 Î Operating and Storage Junction Temperature Range Î T J, T stg 55 to + 15 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS ÎÎ Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R Î JunctiontoAmbient on 1 sq. (645 sq. mm) Collector pad on FR4 bd material Î JC 42 C/W R JA 8 JunctiontoAmbient on 2 sq. (7.6 sq. mm) Collector pad on FR4 bd material R Î JA 174 ÎÎ Î Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Î T L 26 C ORDERING INFORMATION Device Package Shipping MMJT9435T1 SOT223 / Tape & Reel MMJT9435T1G SOT223 (PbFree) / Tape & Reel MMJT9435T3 SOT223 4 / Tape & Reel MMJT9435T3G SOT223 (PbFree) 4 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 2

3 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Î Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining oltage (I C = madc, I B CEO(sus) = Adc) 3 Î EmitterBase oltage (I E = 5 Adc, I C = Adc) EBO 6. Î Collector Cutoff Current I CER ( CE = 25, R BE = 2 ) ÎÎ 2 Î Adc ( CE = 25, R BE = 2, T J = 125 C) 2 Emitter Cutoff Current I ( BE = 5. ) EBO Î Adc ON CHARACTERISTICS (Note 1) CollectorEmitter Saturation oltage (I C =.8 Adc, I B = 2 madc) CE(sat) 55 Î.2 (I C = 1.2 Adc, I B = 2 madc).275 (I C = 3. Adc, I B ÎÎ =.3 Adc) Î.55 BaseEmitter Saturation oltage (I C = 3. Adc, I B =.3 Adc) BE(sat) Î 1.25 BaseEmitter On oltage BE(on) (I C = 1.2 Adc, CE = 4. ) ÎÎ Î 1. DC Current Gain h FE (I C =.8 Adc, CE = ) (I C = 1.2 Adc, CE ÎÎ = ) 1 Î (I C = 3. Adc, CE = ) 9 Î DYNAMIC CHARACTERISTICS Output Capacitance C ob ( CB =, I E = Adc, f = MHz) ÎÎ Î 15 pf Input Capacitance C ib ( EB = 8. ) 135 Î pf CurrentGain Bandwidth Product (Note 2) f Î T 1 Î MHz (I C = 5 ma, CE =, F test = MHz) 1. Pulse Test: Pulse Width 3 s, Duty Cycle 2%. 2. f T = h FE f test CE(sat), COLLECTOREMITTER OLTAGE () A I C = 3. A 1.2 A.8 A.5 A.5 I C =.25 A CE(sat), COLLECTOREMITTER OLTAGE () I B, BASE CURRENT (ma) I B, BASE CURRENT (ma) 1.2 A.8 A.5 A Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 3

4 15 C 15 C, DC CURRENT GAIN 25 C 55 C, DC CURRENT GAIN 25 C 55 C H H FE FE CE = CE = 4. Figure 3. DC Current Gain Figure 4. DC Current Gain I C /I B = BE(sat), OLTAGE () BE(sat), OLTAGE () CE(sat) CE(sat) I C /I B = 5 Figure 5. On oltages Figure 6. On oltages 1.2, OLTAGE () C 25 C 15 C CAPACITANCE (pf) C ob CE = 4. R, REERSE OLTAGE (OLTS) Figure 7. BE(on) oltage Figure 8. Output Capacitance 4

5 f t I MMJT9435, CURRENTGAIN BANDWIDTH PRODUCT CE = f test = MHz T A = 25 C C, COLLECTOR CURRENT (AMPS).1 5. ms BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT.5 ms ms CE, COLLECTOREMITTER OLTAGE (OLTS) Figure 9. CurrentGain Bandwidth Product Figure. Active Region Safe Operating Area, POWER DISSIPATION (WATTS) P D T C 2. T A There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate I C CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on T J(pk) = 15 C; T C is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to % provided T J(pk) 15 C. T J(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. T, TEMPERATURE ( C) Figure 11. Power Derating r(t), EFFECTIE TRANSIENT THERMAL RESISTANCE (NORMALIZED).1 D = SINGLE PULSE R JA (t) = r(t) JA JA = 174 C/W D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T A = P (pk) JA (t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t t, TIME (seconds) Figure 12. Thermal Response 5

6 PACKAGE DIMENSIONS SOT223 (TO261) CASE 318E4 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH..8 (3) L S H G D B C M K J INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L M S STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* SCALE 6:1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. MMJT9435/D

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