PMPB15XN. 1. Product profile. 20 V, single N-channel Trench MOSFET 13 September 2012 Product data sheet. 1.1 General description

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1 3 September 22 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN22MD-6 (SOT22) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology..2 Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x.65 mm Exposed drain pad for excellent thermal conduction Tin-plated % solderable side pads for optical solder inspection.3 Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management.4 Quick reference data Table. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j = 25 C V V GS gate-source voltage -2-2 V I D drain current V GS = 4.5 V; T amb = 25 C; t 5 s [] A Static characteristics R DSon drain-source on-state resistance V GS = 4.5 V; I D = 7.3 A; T j = 25 C mω [] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm 2. Scan or click this QR code to view the latest information for this product

2 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source D G S 7aaa253 Transparent top view DFN22MD-6 (SOT22) 3. Ordering information Table 3. Type number Ordering information Package Name Description Version DFN22MD-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT22 4. Marking Table 4. Marking codes Type number Marking code J 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage T j = 25 C - 2 V V GS I D gate-source voltage drain current -2 2 V V GS = 4.5 V; T amb = 25 C; t 5 s [] -.4 A V GS = 4.5 V; T amb = 25 C [] A V GS = 4.5 V; T amb = C [] A I DM peak drain current T amb = 25 C; single pulse; t p µs - 24 A P tot total power dissipation T amb = 25 C [] -.7 W All information provided in this document is subject to legal disclaimers. NXP B.V. 22. All rights reserved Product data sheet 3 September 22 2 / 2

3 Symbol Parameter Conditions Min Max Unit T amb = 25 C; t 5 s [] W T sp = 25 C W T j junction temperature C T amb ambient temperature C T stg storage temperature C Source-drain diode I S source current T amb = 25 C [] - 2 A [] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm aaa23 2 7aaa24 P der (%) I der (%) T j ( C) T j ( C) Fig.. Normalized total power dissipation as a function of junction temperature Fig. 2. Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. NXP B.V. 22. All rights reserved Product data sheet 3 September 22 3 / 2

4 2 7aaa794 I D (A) Limit R DSon = V DS /I D t p = µs t p = ms - DC; T sp = 25 C DC; T amb = 25 C; drain mounting pad 6 cm 2 t p = ms t p = ms V DS (V) I DM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) R th(j-sp) thermal resistance from junction to ambient thermal resistance from junction to solder point in free air [] K/W [2] K/W in free air; t 5 s [2] K/W - 5 K/W [] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm 2. All information provided in this document is subject to legal disclaimers. NXP B.V. 22. All rights reserved Product data sheet 3 September 22 4 / 2

5 3 7aaa542 Z th(j-a) (K/W) 2 duty cycle = Fig t p (s) FR4 PCB, standard footprint Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 3 7aaa543 Z th(j-a) (K/W) 2 duty cycle = Fig t p (s) FR4 PCB, mounting pad for drain 6 cm 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS V GSth drain-source breakdown voltage gate-source threshold voltage I D = 25 µa; V GS = V; T j = 25 C V I D = 25 µa; V DS = V GS ; T j = 25 C V I DSS drain leakage current V DS = 2 V; V GS = V; T j = 25 C - - µa I GSS gate leakage current V GS = -2 V; V DS = V; T j = 25 C na All information provided in this document is subject to legal disclaimers. NXP B.V. 22. All rights reserved Product data sheet 3 September 22 5 / 2

6 Symbol Parameter Conditions Min Typ Max Unit V GS = 2 V; V DS = V; T j = 25 C - - na R DSon drain-source on-state resistance V GS = 4.5 V; I D = 7.3 A; T j = 25 C mω V GS = 4.5 V; I D = 7.3 A; T j = 5 C mω V GS = 2.5 V; I D = 6.4 A; T j = 25 C mω V GS =.8 V; I D = 2. A; T j = 25 C mω g fs forward transconductance V DS = V; I D = 7.3 A; T j = 25 C S R G gate resistance f = MHz Ω Dynamic characteristics Q G(tot) total gate charge V DS = V; I D = 7.3 A; V GS = 4.5 V; nc Q GS gate-source charge T j = 25 C nc Q GD gate-drain charge nc C iss input capacitance V DS = V; f = MHz; V GS = V; pf C oss output capacitance T j = 25 C pf C rss reverse transfer capacitance pf t d(on) turn-on delay time V DS = V; I D = 7.3 A; V GS = 4.5 V; ns t r rise time R G(ext) = 6 Ω; T j = 25 C ns t d(off) turn-off delay time ns t f fall time ns Source-drain diode V SD source-drain voltage I S = 2 A; V GS = V; T j = 25 C V 28 I D (A) V 2.5 V 2. V 2 V V GS =.8 V 7aaa795-2 I D (A) 7aaa V.4 V -4 min typ max V V DS (V) T j = 25 C V GS (V) T j = 25 C; V DS = 5 V Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig. 7. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. NXP B.V. 22. All rights reserved Product data sheet 3 September 22 6 / 2

7 . R DSon (Ω) 7aaa797.5 V.6 V.7 V.8 V 2 V. R DSon (Ω) 7aaa V.4 T j = 5 C V V GS = 4.5 V.2 T j = 25 C I D (A) V GS (V) T j = 25 C I D = 6 A Fig. 8. Drain-source on-state resistance as a function of drain current; typical values Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values 24 7aaa aaa8 I D (A) a T j = 5 C T j = 25 C V GS (V) V DS > I D R DSon Fig.. Transfer characteristics: drain current as a function of gate-source voltage; typical values T j ( C) Fig.. Normalized drain-source on-state resistance as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. NXP B.V. 22. All rights reserved Product data sheet 3 September 22 7 / 2

8 .5 7aaa8 4 7aaa82 V GS(th) (V) C (pf). 3 C iss max.5 typ 2 C oss C rss min T j ( C) I D =.25 ma; V DS = V GS Fig. 2. Gate-source threshold voltage as a function of junction temperature - 2 V DS (V) f = MHz; V GS = V Fig. 3. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 4.5 7aaa83 V DS V GS (V) I D 3. V GS(pl) V GS(th) V GS.5 Q GS Q GS2 Q GS Q G(tot) Q GD 5 5 Q G (nc) I D = 6 A; V DS = V; T amb = 25 C Fig. 5. Gate charge waveform definitions 7aaa37 Fig. 4. Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. NXP B.V. 22. All rights reserved Product data sheet 3 September 22 8 / 2

9 2. 7aaa84 I S (A).5..5 T j = 5 C T j = 25 C V GS = V V DS (V) Fig. 6. Source current as a function of source-drain voltage; typical values 8. Test information P t t 2 duty cycle δ = t t 2 t 6aaa82 Fig. 7. Duty cycle definition 9. Package outline Dimensions in mm Fig. 8. Package outline DFN22MD-6 (SOT22) All information provided in this document is subject to legal disclaimers. NXP B.V. 22. All rights reserved Product data sheet 3 September 22 9 / 2

10 . Soldering Footprint information for reflow soldering of DFN22MD-6 package SOT22.33 (6 ) (6 ).53 (6 ) (6 ) (6 ).45 (6 ) solder land solder land plus solder paste solder paste deposit occupied area solder resist Dimensions in mm sot22_fr Fig. 9. Reflow soldering footprint for DFN22MD-6 (SOT22) All information provided in this document is subject to legal disclaimers. NXP B.V. 22. All rights reserved Product data sheet 3 September 22 / 2

11 . Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes v Product data sheet - - All information provided in this document is subject to legal disclaimers. NXP B.V. 22. All rights reserved Product data sheet 3 September 22 / 2

12 3. Contents Product profile.... General description....2 Features and benefits....3 Applications....4 Quick reference data... 2 Pinning information Ordering information Marking Limiting values Thermal characteristics Characteristics Test information Package outline... 9 Soldering... Revision history... 2 Legal information Data sheet status Definitions Disclaimers Trademarks... NXP B.V. 22. All rights reserved For more information, please visit: For sales office addresses, please send an to: Date of release: 3 September 22 All information provided in this document is subject to legal disclaimers. NXP B.V. 22. All rights reserved Product data sheet 3 September 22 2 / 2

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