Rating Symbol Value Unit Drain Source Voltage VDSS 65 Vdc Gate Source Voltage VGS ±20 Vdc Total Device TC = 25 C Derate above 25 C

Transcription

1 SEMICONDUCTOR TECHNICAL DATA Order this document by MRF284/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from to 26 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN PCS/cellular radio and wireless local loop. Specified Two Tone 2 MHz, 26 Volts Output Power = 3 Watts (PEP) Power Gain = 9 db Efficiency = 3% Intermodulation Distortion = 29 dbc Typical Single Tone Performance at 2 MHz, 26 Volts Output Power = 3 Watts (CW) Power Gain = 9.5 db Efficiency = 45% Characterized with Series Equivalent Large Signal Impedance Parameters S Parameter Characterization at High Bias Levels Excellent Thermal Stability Capable of Handling :1 26 Vdc, 2 MHz, 3 Watts (CW) Output Power MAXIMUM RATINGS 3 W, 2 MHz, 26 V LATERAL N CHANNEL BROADBAND RF POWER MOSFETs CASE 36B 1, STYLE 1 (MRF284) CASE 36C 3, STYLE 1 (MRF284S) Rating Symbol Value Unit Drain Source Voltage VDSS 65 Vdc Gate Source Voltage VGS ±2 Vdc Total Device TC = 25 C Derate above 25 C PD Watts W/ C Storage Temperature Range Tstg 65 to 15 C Operating Junction Temperature TJ 2 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2. C/W ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain Source Breakdown Voltage (VGS =, ID = µadc) Zero Gate Voltage Drain Current (VDS = 2 Vdc, VGS = ) Gate Source Leakage Current (VGS = 2 Vdc, VDS = ) V(BR)DSS 65 Vdc IDSS 1. µadc IGSS µadc NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA Motorola, Inc RF DEVICE DATA 1

2 ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Gate Threshold Voltage (VDS = Vdc, ID = 15 µadc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 2 madc) Drain Source On Voltage (VGS = Vdc, ID = 1. Adc) Forward Transconductance (VDS = Vdc, ID = 1. Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS =, f = 1. MHz) Output Capacitance (VDS = 26 Vdc, VGS =, f = 1. MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS =, f = 1. MHz) FUNCTIONAL TESTS (in Motorola Test Fixture) Common Source Power Gain (VDD = 26 Vdc, Pout = 3 W, IDQ = 2 ma, f1 = 2. MHz, f2 = 2.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 3 W, IDQ = 2 ma, f1 = 2. MHz, f2 = 2.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 3 W, IDQ = 2 ma, f1 = 2. MHz, f2 = 2.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 3 W, IDQ = 2 ma, f1 = 2. MHz, f2 = 2.1 MHz) Common Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 3 W PEP, IDQ = 2 ma, f1 = 193. MHz, f2 = MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 3 W PEP, IDQ = 2 ma, f1 = 193. MHz, f2 = MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 3 W PEP, IDQ = 2 ma, f1 = 193. MHz, f2 = MHz) Input Return Loss (VDD = 26 Vdc, Pout = 3 W PEP, IDQ = 2 ma, f1 = 193. MHz, f2 = MHz) Common Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 3 W CW, IDQ = 2 ma, f1 = 2. MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 3 W CW, IDQ = 2 ma, f1 = 2. MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 3 W CW, IDQ = 2 ma, f1 = 2. MHz, VSWR = :1, at All Phase Angles) VGS(th) Vdc VGS(q) Vdc VDS(on).3.6 Vdc gfs S Ciss 43 pf Coss 23 pf Crss 1.4 pf Gps 9.5 db η 3 35 % IMD dbc IRL 9 15 db Gps 9.4 db η 35 % IMD 34 dbc IRL 9 15 db Gps db η % Ψ No Degradation In Output Power 2

3 VGG (BIAS) C1 B1 R1 C4 B2 R2 C7 B3 R3 C5 C8 C13 C15 B4 R4 C12 B5 R5 C14 B6 R6 C17 VDD (DC Supply) _ RF INPUT L1 Z1 Z2 Z3 Z4 C2 C3 C6 Z5 Z6 L2 Z7 C9 Z8 DUT Z9 Z C Z11 L3 Z12 Z13 Z14 C16 C11 L4 Z15 RF OUTPUT B1 B6 Ferrite Bead, Round C1, C17 47 µf, 63 V, Mallory Electrolytic Capacitor C pf Johansen Gigatrim Variable Capacitors C3, C pf Johansen Gigatrim Variable Capacitors C4, C14.1 µf Chip Capacitor, KEMET C5, C15 91 pf ATC RF Chip Capacitors, Case B C6, C16 pf ATC RF Chip Capacitors, Case B C7, C12 pf ATC RF Chip Capacitors, Case B C8, C pf ATC RF Chip Capacitors, Case B C 2.7 pf ATC RF Chip Capacitors, Case B C pf Johansen Gigatrim Variable Capacitors L1 4 Turns, #27 AWG,.87 OD,.5 ID,.69 Long, nh L2, L3 9 Turns, #26 AWG,.8 OD,.46 ID,.17 Long, 3.8 nh L4 2 Turns, #24 AWG,.85 OD,.42 ID,.64 Long, 5.2 nh R1 R6 12 Ω Fixed Film Chip Resistor.8 x.13 Z1.145 x.8 Microstrip Z2.68 x.8 Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z Z11 Z12 Z13 Z14 Z15 Board.185 x.8 Microstrip.395 x.8 Microstrip.49 x.8 Microstrip.35 x.325 Microstrip.24 x.325 Microstrip.2 x.515 Microstrip.13 x.515 Microstrip.8 x.515 Microstrip.19 x.325 Microstrip.9 x.325 Microstrip.515 x.8 Microstrip.86 x.8 Microstrip.5 x.8 Microstrip.3 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Manufacturer; Arlon, P/N: GX , εr = 2.55 Figure 1. Schematic of GHz Broadband Test Circuit 3

4 VSUPPLY R1 R3 C1 P1 R2 Q1 R4 Q2 VDD R6 R5 C9 B1 C7 R7 B2 R8 C8 C2 C4 C11 C13 B3 R9 C B4 R B5 R11 C15 C16 VDD L4 RF INPUT L1 Z1 Z2 Z3 Z4 Z5 L2 C3 Z6 C5 L3 Z7 Z8 C6 Z9 DUT Z Z11 Z12 C12 Z13 Z14 Z15 Z16 C14 C17 RF OUTPUT B1 B5 Ferrite Bead, Round C1, C9, C16 µf, 5 V, Electrolytic Capacitor, Sprague C2, C13 51 pf, ATC RF Chip Capacitors, Case B C3, C14 pf, ATC RF Chip Capacitors, Case B C4, C11 12 pf, ATC RF Chip Capacitors, Case B C pf Variable Capacitor, Johansen Gigatrim C6 4.7 pf, ATC RF Chip Capacitor, Case B C7, C15 91 pf, ATC RF Chip Capacitors, Case B C8 pf, ATC RF Chip Capacitor, Case B C.1 µf, Chip Capacitor, KEMET C12, C pf, Variable Capacitors, Johansen Gigatrim L1 4 Turns, #27 AWG,.87 OD,.5 ID,.69 Long, nh L2 5 Turns, #24 AWG,.83 OD,.4 ID,.128 Long, 12.5 nh L3, L4 9 Turns, #26 AWG,.8 OD,.46 ID,.17 Long, 3.8 nh P1 Ohm Potentiometer, 1/2 W, Turns Q1 Transistor, NPN, Motorola P/N: MJD31, Case 369A Q2 Transistor, PNP, Motorola P/N: MJD32, Case 369A R1 36 Ω, Fixed Film Chip Resistor.8 x.13 R2 2 x 12 kω, Fixed Film Chip Resistor.8 x.13 R3 1 Ω, Wirewound, 5 W, 3% Resistor R4 4 x 6.8 kω, Fixed Film Chip Resistor.8 x.13 R5 2 x 15 Ω, Fixed Film Chip Resistor.8 x.13 R6 27 Ω, Fixed Film Chip Resistor,.8 x.13 R7 R11 12 Ω, Fixed Film Chip Resistor,.8 x.13 Z1.363 x.8 Microstrip Z2.8 x.8 Microstrip Z3.916 x.8 Microstrip Z4.517 x.8 Microstrip Z5.5 x.325 Microstrip Z6.5 x.325 Microstrip Z7.71 x.325 Microstrip Z8.125 x.325 Microstrip Z9.2 x.515 Microstrip Z.2 x.515 Microstrip Z x.325 Microstrip Z12.2 x.325 Microstrip Z13.2 x.325 Microstrip Z14.5 x.8 Microstrip Z15.99 x.8 Microstrip Z16.39 x.8 Microstrip Raw PCB Material.3 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Manufacturer; Arlon, P/N: GX , εr = 2.55 Figure 2. Schematic of 2. GHz Class A Test Circuit 4

5 TYPICAL CHARACTERISTICS, OUTPUT POWER (WATTS) Pout VDD = 26 Vdc IDQ = 2 ma f = 2 MHz Single Tone Pin, INPUT POWER (WATTS) Pout Gpe G pe, GAIN (db), OUTPUT POWER (WATTS) Pout W 3 W 2 W Pin = 1 W VDD = 26 Vdc 15 IDQ = 2 ma Single Tone f, FREQUENCY (MHz) Figure 3. Output Power & Power Gain versus Input Power Figure 4. Output Power versus Frequency IMD, INTERMODULATION DISTORTION (dbc) IMD, INTERMODULATION DISTORTION (dbc) VDD = 26 Vdc IDQ = 2 ma f1 = 2. MHz f2 = 2.1 MHz 3rd Order 5th Order 7th Order 1. Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power VDD = 26 Vdc f1 = 2. MHz f2 = 2.1 MHz ma 3 ma IDQ = 4 ma 2 ma, GAIN (db) Gpe, POWER GAIN (db) G pe Pout, OUTPUT POWER (WATTS) PEP Figure 6. Power Gain and Intermodulation Distortion versus Supply Voltage IDQ = 4 ma 3 ma 2 ma ma 1. Pout, OUTPUT POWER (WATTS) PEP VDD = 26 Vdc f1 = 2. MHz f2 = 2.1 MHz Gpe Pout = 3 W (PEP) IDQ = 2 ma IMD 35 f1 = 2. MHz f2 = 2.1 MHz VDD, DRAIN SUPPLY VOLTAGE (Vdc) IMD, INTERMODULATION DISTORTION (dbc) Figure 7. Intermodulation Distortion versus Output Power Figure 8. Power Gain versus Output Power 5

6 TYPICAL CHARACTERISTICS 3 Tflange = 75 C Ciss ID, DRAIN CURRENT (Adc) 2 1 TJ = 175 C Tflange = C C, CAPACITANCE (pf) Coss Crss VDD, DRAIN SUPPLY VOLTAGE (Vdc) VDS, DRAIN SOURCE VOLTAGE (VOLTS) Figure 9. DC Safe Operating Area Figure. Capacitance versus Drain Source Voltage, OUTPUT POWER (dbm) Pout FUNDAMENTAL 3rd Order Pin, INPUT POWER (dbm) VDD = 26 Vdc IDQ = 1.8 Adc f1 = 2. MHz f2 = 2.1 MHz 6 Figure 11. Class A Third Order Intercept Point 6

7 , GAIN (db) Gp TYPICAL CHARACTERISTICS GAIN Pout = 3 Watts (PEP) VDD = 26 Vdc, IDQ = 2 ma Two Tone Frequency Delta = khz VSWR f, FREQUENCY (MHz) Figure GHz Broadband Circuit Performance η IMD EFFICIENCY (%) INTERMODULATION DISTORTION (dbc) INPUT VSWR 1.E MTBF FACTOR (HOURS x AMPS ) 2 1.E9 1.E8 1.E7 1.E6 1.E5 1.E TJ, JUNCTION TEMPERATURE ( C) 2 This graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperature have correlated to better than ±% of the theoretical prediction for metal failure. Divide MTBF factor by ID 2 for MTBF in a particular application. Figure 13. MTBF Factor versus Junction Temperature 25 7

8 j1 j.5 j2 j3 Zin 2 GHz j.2 j5 Zo = 1 Ω f = 1.8 GHz 2 GHz j ZOL* f = 1.8 GHz j j.2 j5 j3 j.5 j2 j1 VCC = 26 V, ICQ = 2 ma, Pout = 15 Wavg f MHz Zin(1) Ω 1. j.4 1. j.8 1. j j1.4 ZOL* Ω 2.1 j j j j j j.92 Zin(1)= ZOL* = Conjugate of fixture base terminal impedance. Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 14. Series Equivalent Input and Output Impedence 8

9 Table 1. Common Source S Parameters at VDS = 26 Vdc, ID = 1.8 Adc f S11 S21 S12 S22 GHz S11 S21 S12 S

10 NOTES

11 PACKAGE DIMENSIONS G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. B K H E D 1 2 N A F 3 Q 2 PL.25 (.) M T A M B M C T SEATING PLANE CASE 36B 1 ISSUE O (MRF284) INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.562 BSC BSC H K N Q STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE B K E H 1 2 D N 3 F C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F H K N A CASE 36C 3 ISSUE B (MRF284S) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 11

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