# SILICON VLSI TECHNOLOGY

Save this PDF as:

Size: px
Start display at page:

## Transcription

1 SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling CHAPTER 9b-- --PVD EX0250

2

3

4 E-Beam Heat Source

5

6

7 Formulation (point source) The flux F p k that strikes Ap k is F p k = R evap / r2 ; = da p k /r2 ; da p k = r2 The flux F k that strikes A k is F k = R evap cos k / r 2 The deposition velocity is = R evap cos k /( r 2 N); N is the density or = (R evap / N) [1/(h 2 +l 2 )] h/(h 2 +l 2 ) 0.5

8 Formulation (small surface source) The deposition velocity is = R evap cos i cos k / r 2 N; The deposition velocity for small surface source with i = k is presented with dotted line in Fig. 9.17

9

10

11 This nonideal behavior may be due to crucible geometry, ratio of melt depth to melt surface area etc.

12 Solution for nonideal emission or deposition Hemispherical wafer holders are used and are rotated. The entire planetary fixture is rotated about the vertical axis, each group of wafers is also rotated about a second axis.

13 Source evaporation rate R evap R evap = 5.83 x 10-2 A s (m/t) 1/2 P e ; where A s is the area of the source in cm 2, m is the grammolecular mass, T is the temperature of the source in Kelvin and P e is vapor pressure in torr.

14

15 For alloys Use different source for each element. The e-beam energy or the source temperature can be different so that the evaporation rates can be controlled to give the desired deposited film. However, this dual sources will cause spatial compositional uniformity. It is difficult to obtain constant compositions across the wafer and across the wafer holder.

16 For compounds The composition of the vapor phase is usually not the same as the source compound, and chemical reactions and molecular changes often occur as the material is evaporated and deposited.

17 Advantages There is little damage caused to the wafer since wafers are not subjected to energetic particles. The deposited film are usually very pure. Because the deposition is done in a high vacuum, there are no residual gases or particles to get incorporated in the film.

18 Disadvantages Metals with low vapor pressures, such as W and films of alloys or compounds with precisely controlled composition are difficult to evaporate. There is not in situ pre-cleaning method (sputter etch) available as there is for sputter deposition. Step coverage is poor due to nonideal emission caused by small area of source, and large mean free path of molecules (P~10-5 torr). Rotating the planetary and wafers does help to widen the range of arrival angles, but shadowing effect still occurs. Step coverage also depends on sticking coefficient S c and mobility of molecules. Both evaporation and sputtering deposition have a very high sticking coefficient and low mobility of molecules which causes very poor step coverage.

20 S c = F reacted /F incident ~ 1 for evaporation or sputtering

21 P ~ 10-1 to 10-3 torr

22

23 ions electrons

24

25

26 Definition of Yield Yield for Ar sputtering of different target materials do not vary very much for the different target materials, and is defined as the number of atoms or molecules ejected from the target per incident ion, and is the in the range of 0.1 to 3.

27

28

29

30 Multiple targets can be used for cosputtering Cosputtering of alloys and compounds or multilayer deposition. Achieving good uniformity by: 1. having the target larger than the wafer or wafer holder, i.e. the arrival angles of the atoms at the wafer surface are more widely distributed which improves step coverage. 2. having the wafers pass by or spin in front of a long rectangular target, i.e. similar to having a large target. 3. using the cylindrical wafer holder around an oblong target (similar to having a spherical holder in front of a point source in evaporation.)

31 Cos distribution, wider target area having a good step coverage Cos n ; n>1 distribution, narrow target area having a poor step converage

32 Cos n ; n>>1 Cos n ; n ~ 1 In sputtering, P is much larger than in evaporation system. Particles arrival is fairly uniform just like Fig. 9-25a.

33 Step coverage The increase of P can widen the encoming angle of the sputtered particles. For this reason, step coverage in sputtering system is better than in evaporation system. In CVD system, particle arrival is more isotropic and Sc is very low. Step coverage in CVD system is better than in sputtering or evaporation.

34

35 Film property controlled by substrate temperature At T/T m < 0.5, may lead to porous film with poor physical properties. At T/T m = 0.5~0.7 grain grows unidirectionally and film is columnar, good film property. In general, grain size is proportional to temperature. At T/T m > 0.7, film consists of equiaxially larger grains caused by recrystallization during film growth. Ar can be incorporated into film to approximately 1% which can change the film properties. During annealing or thermal treatment, Ar can condense and result in blistering or delamination of film. In general, good film properties is attained at high T and low P.

36 Reactive Sputtering Deposition For example, to deposit thin film of TiN or TiO 2. For both cases, sputter Ti in the presence of N 2 or O 2 gas. First, N 2 is dissociated into N atom by plasma, then it react with Ti in the target or on the film surface. For TiO 2, the oxygen react with Ti of the film surface.

37 Relationship of voltage and surface area between anode and cathode V 1 /V 2 = (A 2 /A 1 ) m where from theory, m = 4; from experiments, m = 1~2. Where 1 represents anode; 2 represents cathode.

38 Cathode; 1 Anode; 2 wafer V 2 should be much greater to make ion barmbarment on the target surface. Therefore, A 1 must be small.

39

40 Bias sputtering: Sputtering etching or bias-sputter deposition cathode anode bias

41 Deposition and sputter etch can occur concurrently.

42

43 Collimated sputter deposition and ionized sputter deposition Collimated sputtering is to make arrival angle of flux small when deposited into a deep contact or via, as when filling it with Al or Ti/TiN contact and barrier layers.

44

45 To achieve a narrow range of angle for sputtering flux Reduce the size of the target. A plate of circular or hexagonal holes or cells is placed between the target and the wafer. Ionized the material flux and bias the substrate as shown in Fig

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

61

62

63

64

65

66

67

68

### Vacuum Evaporation Recap

Sputtering Vacuum Evaporation Recap Use high temperatures at high vacuum to evaporate (eject) atoms or molecules off a material surface. Use ballistic flow to transport them to a substrate and deposit.

### Physical Vapor Deposition (PVD): SPUTTER DEPOSITION

We saw CVD PECVD Physical Vapor Deposition (PVD): SPUTTER DEPOSITION Gas phase reactants: P g 1 mtorr to 1 atm. Good step coverage, T > > RT Plasma enhanced surface diffusion without need for elevated

### Lecture 12. Physical Vapor Deposition: Evaporation and Sputtering Reading: Chapter 12. ECE 6450 - Dr. Alan Doolittle

Lecture 12 Physical Vapor Deposition: Evaporation and Sputtering Reading: Chapter 12 Evaporation and Sputtering (Metalization) Evaporation For all devices, there is a need to go from semiconductor to metal.

### Coating Technology: Evaporation Vs Sputtering

Satisloh Italy S.r.l. Coating Technology: Evaporation Vs Sputtering Gianni Monaco, PhD R&D project manager, Satisloh Italy 04.04.2016 V1 The aim of this document is to provide basic technical information

### Lecture 6 PVD (Physical vapor deposition): Evaporation and Sputtering

F. G. Tseng Lec6, Fall/2001, p1 Lecture 6 PVD (Physical vapor deposition): Evaporation and Sputtering Vacuum evaporation 1. Fundamental of Evaporation: The material to be evaporated is heated in an evacuated

### Sputtering (cont.) and Other Plasma Processes

Sputtering (cont.) and Other Plasma Processes Sputtering Summary Create an ionic plasma by applying a high voltage to a glow tube. Ions bombard the target material at the cathode. Target atoms are ejected

### Exercise 3 Physical Vapour Deposition

Exercise 3 Physical Vapour Deposition Physical Vapour Deposition (PVD) technology consist of the techniques of arc deposition, ion plating, resistance evaporation, electron beam evaporation, sputtering

### Chemical Vapor Deposition

Chemical Vapor Deposition Physical Vapor Deposition (PVD) So far we have seen deposition techniques that physically transport material from a condensed phase source to a substrate. The material to be deposited

### Ion Beam Sputtering: Practical Applications to Electron Microscopy

Ion Beam Sputtering: Practical Applications to Electron Microscopy Applications Laboratory Report Introduction Electron microscope specimens, both scanning (SEM) and transmission (TEM), often require a

### 2. Deposition process

Properties of optical thin films produced by reactive low voltage ion plating (RLVIP) Antje Hallbauer Thin Film Technology Institute of Ion Physics & Applied Physics University of Innsbruck Investigations

### Deposition of Thin Metal Films " (on Polymer Substrates)!

Deposition of Thin Metal Films " (on Polymer Substrates)! Shefford P. Baker! Cornell University! Department of Materials Science and Engineering! Ithaca, New York, 14853! MS&E 5420 Flexible Electronics,

### Lecture 22: Integrated circuit fabrication

Lecture 22: Integrated circuit fabrication Contents 1 Introduction 1 2 Layering 4 3 Patterning 7 4 Doping 8 4.1 Thermal diffusion......................... 10 4.2 Ion implantation.........................

### II. Thin Film Deposition

II. Thin Film Deposition Physical Vapor Deposition (PVD) - Film is formed by atoms directly transported from source to the substrate through gas phase Evaporation Thermal evaporation E-beam evaporation

### Physical Vapor Deposition

Physical Vapor Deposition May 2008 2 Contents 8.1 Atomistic Deposition............................... 4 8.2 Evaporation.................................... 5 8.2.1 Source of heat..............................

### Enhanced step coverage by oblique angle physical vapor deposition

JOURNAL OF APPLIED PHYSICS 97, 150 005 Enhanced step coverage by oblique angle physical vapor deposition Tansel Karabacak a and Toh-Ming Lu Center for Integrated Electronics and Department of Physics,

### MMIC Design and Technology. Fabrication of MMIC

MMIC Design and Technology Fabrication of MMIC Instructor Dr. Ali Medi Substrate Process Choice Mobility & Peak Velocity: Frequency Response Band-Gap Energy: Breakdown Voltage (Power-Handling) Resistivity:

### Electron Beam and Sputter Deposition Choosing Process Parameters

Electron Beam and Sputter Deposition Choosing Process Parameters General Introduction The choice of process parameters for any process is determined not only by the physics and/or chemistry of the process,

### Dry Etching and Reactive Ion Etching (RIE)

Dry Etching and Reactive Ion Etching (RIE) MEMS 5611 Feb 19 th 2013 Shengkui Gao Contents refer slides from UC Berkeley, Georgia Tech., KU, etc. (see reference) 1 Contents Etching and its terminologies

### Stress Control in AlN and Mo Films for Electro-Acoustic Devices

Stress Control in AlN and Mo Films for Electro-Acoustic Devices Valery Felmetsger and Pavel Laptev Tegal Corporation IFCS 2008 Paper ID 3077 Slide 1 1 Introduction Piezoelectric AlN films with strong (002)

### Correct flow of information linking the 3 elements of the control system is very important.

UNIFORMITY CONTROL IN REACTIVE MAGNETRON SPUTTERING V. Bellido-Gonzalez 1, B. Daniel 1, Dr. D. Monaghan 1, J. Counsell 2 1 Gencoa Ltd, Physics Road, Liverpool, L24 9HP, UK 2 J. Counsell Ltd., Lynwood (54)

### Chapter 11 PVD and Metallization

Chapter 11 PVD and Metallization 2006/5/23 1 Metallization Processes that deposit metal thin film on wafer surface. 2006/5/23 2 1 Metallization Definition Applications PVD vs. CVD Methods Vacuum Metals

### OPTIMIZING OF THERMAL EVAPORATION PROCESS COMPARED TO MAGNETRON SPUTTERING FOR FABRICATION OF TITANIA QUANTUM DOTS

OPTIMIZING OF THERMAL EVAPORATION PROCESS COMPARED TO MAGNETRON SPUTTERING FOR FABRICATION OF TITANIA QUANTUM DOTS Vojtěch SVATOŠ 1, Jana DRBOHLAVOVÁ 1, Marian MÁRIK 1, Jan PEKÁREK 1, Jana CHOMOCKÁ 1,

### A Remote Plasma Sputter Process for High Rate Web Coating of Low Temperature Plastic Film with High Quality Thin Film Metals and Insulators

A Remote Plasma Sputter Process for High Rate Web Coating of Low Temperature Plastic Film with High Quality Thin Film Metals and Insulators Dr Peter Hockley and Professor Mike Thwaites, Plasma Quest Limited

### High Rate Oxide Deposition onto Web by Reactive Sputtering from Rotatable Magnetrons

High Rate Oxide Deposition onto Web by Reactive Sputtering from Rotatable Magnetrons D.Monaghan, V. Bellido-Gonzalez, M. Audronis. B. Daniel Gencoa, Physics Rd, Liverpool, L24 9HP, UK. www.gencoa.com,

### Chemical Sputtering. von Kohlenstoff durch Wasserstoff. W. Jacob

Chemical Sputtering von Kohlenstoff durch Wasserstoff W. Jacob Centre for Interdisciplinary Plasma Science Max-Planck-Institut für Plasmaphysik, 85748 Garching Content: Definitions: Chemical erosion, physical

### III. Wet and Dry Etching

III. Wet and Dry Etching Method Environment and Equipment Advantage Disadvantage Directionality Wet Chemical Solutions Atmosphere, Bath 1) Low cost, easy to implement 2) High etching rate 3) Good selectivity

### Lecture 11. Etching Techniques Reading: Chapter 11. ECE 6450 - Dr. Alan Doolittle

Lecture 11 Etching Techniques Reading: Chapter 11 Etching Techniques Characterized by: 1.) Etch rate (A/minute) 2.) Selectivity: S=etch rate material 1 / etch rate material 2 is said to have a selectivity

### Conductivity of silicon can be changed several orders of magnitude by introducing impurity atoms in silicon crystal lattice.

CMOS Processing Technology Silicon: a semiconductor with resistance between that of conductor and an insulator. Conductivity of silicon can be changed several orders of magnitude by introducing impurity

### THIN FILM MATERIALS TECHNOLOGY

THIN FILM MATERIALS TECHNOLOGY Sputtering of Compound Materials by Kiyotaka Wasa Yokohama City University Yokohama, Japan Makoto Kitabatake Matsushita Electric Industrial Co., Ltd. Kyoto, Japan Hideaki

### Deposition Overview for Microsytems

Deposition Overview for Microsytems Deposition PK Activity Terminology Participant Guide www.scme-nm.org Deposition Overview for Microsystems Primary Knowledge Participant Guide Description and Estimated

### Sputtering. Ion-Solid Interactions

ssistant Professor Department of Microelectronic Engineering Rochester Institute of Technology 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (716) 475-2923 Fax (716) 475-5041 PDRDV@RIT.EDU Page 1

### State of the art in reactive magnetron sputtering

State of the art in reactive magnetron sputtering T. Nyberg, O. Kappertz, T. Kubart and S. Berg Solid State Electronics, The Ångström Laboratory, Uppsala University, Box 534, S-751 21 Uppsala, Sweden D.

### Module 7 Wet and Dry Etching. Class Notes

Module 7 Wet and Dry Etching Class Notes 1. Introduction Etching techniques are commonly used in the fabrication processes of semiconductor devices to remove selected layers for the purposes of pattern

### Types of Epitaxy. Homoepitaxy. Heteroepitaxy

Epitaxy Epitaxial Growth Epitaxy means the growth of a single crystal film on top of a crystalline substrate. For most thin film applications (hard and soft coatings, optical coatings, protective coatings)

### Thin Film Deposition Processes

International Journal of Modern Physics and Applications Vol. 1, No. 4, 2015, pp. 193-199 http://www.aiscience.org/journal/ijmpa Thin Film Deposition Processes 1, 2, * Dler Adil Jameel 1 School of Physics

### . Tutorial #3 Building Complex Targets

. Tutorial #3 Building Complex Targets. Mixed Gas/Solid Targets Gas Ionization Chamber Previous Tutorials have covered how to setup TRIM, determine which ion and energy to specify for a semiconductor n-well

### Chemistry 13: States of Matter

Chemistry 13: States of Matter Name: Period: Date: Chemistry Content Standard: Gases and Their Properties The kinetic molecular theory describes the motion of atoms and molecules and explains the properties

### Deposition of Magnesium Silicide Nanoparticles by the Combination of Vacuum Evaporation and Hydrogen Plasma Treatment

Proc. Int. Conf. and Summer School on Advanced Silicide Technology 2014 JJAP Conf. Proc. 3 (2015) 011301 2015 The Japan Society of Applied Physics Deposition of Magnesium Silicide Nanoparticles by the

### Products. Emission spectrometer. NIR sensor. Ultrasonic analysis

XXII. Erfahrungsaustausch Mühlleiten 2015 Plasmaanalyse und Prozessoptimierung mittels spektroskopischem Plasmamonitoring in industriellen Anwendungen Swen Marke,, Lichtenau Thomas Schütte, Plasus GmbH,

### Chem 1A Exam 2 Review Problems

Chem 1A Exam 2 Review Problems 1. At 0.967 atm, the height of mercury in a barometer is 0.735 m. If the mercury were replaced with water, what height of water (in meters) would be supported at this pressure?

### VI. Pattern Transfer: Additive techniques-physical Vapor Deposition and Chemical Vapor Deposition

VI. Pattern Transfer: Additive techniques-physical Vapor Deposition and Chemical Vapor Deposition Content Physical vapor deposition (PVD) Chemical vapor deposition (CVD) Thermal evaporation Reaction mechanisms

### Nanoscale Fabrication Methods

Nanoscale Fabrication Methods Top down Bottom up take away material to form nanoscale objects assemble nanoscale objects out of even smaller units (e.g., atoms and molecules) Semiconductor chips Micromachines

### Neuere Entwicklungen zur Herstellung optischer Schichten durch reaktive. Wolfgang Hentsch, Dr. Reinhard Fendler. FHR Anlagenbau GmbH

Neuere Entwicklungen zur Herstellung optischer Schichten durch reaktive Sputtertechnologien Wolfgang Hentsch, Dr. Reinhard Fendler FHR Anlagenbau GmbH Germany Contents: 1. FHR Anlagenbau GmbH in Brief

### 1/ 2. = 444 ms -1 PN RT. ρ = (πd 2 ) C rel ρ = m -3 s -1. = = mol L -1 s -1

TOPIC - THE COLLISIO THEORY Example of solved problems. For molecular oxygen at 5 o C, (a) calculate the collision frequency z and (b) the collision density Z at a pressure of atm. Given: d oxy. 0.36 nm.

### 2. Nanoparticles. Introduction to Nanoscience, 2005 1

2. Nanoparticles Nanoparticles are the simplest form of structures with sizes in the nm range. In principle any collection of atoms bonded together with a structural radius of < 100 nm can be considered

### Lecture 9. Surface Treatment, Coating, Cleaning

1 Lecture 9. Surface Treatment, Coating, Cleaning These processes are sometimes referred to as post-processing. They play a very important role in the appearance, function and life of the product. Broadly,

### Electrolytic Deposition of Fine Pitch Sn/Cu Solder Bumps for Flip Chip Packaging

Electrolytic Deposition of Fine Pitch Sn/Cu Solder Bumps for Flip Chip Packaging Stephen Kenny, Kai Matejat, Sven Lamprecht and Olivier Mann Atotech Germany Erasmusstrasse 20, 10553 Berlin Germany +49

### Test 5 Review questions. 1. As ice cools from 273 K to 263 K, the average kinetic energy of its molecules will

Name: Thursday, December 13, 2007 Test 5 Review questions 1. As ice cools from 273 K to 263 K, the average kinetic energy of its molecules will 1. decrease 2. increase 3. remain the same 2. The graph below

Graduate Student Presentations Dang, Huong Chip packaging March 27 Call, Nathan Thin film transistors/ liquid crystal displays April 4 Feldman, Ari Optical computing April 11 Guerassio, Ian Self-assembly

### Section 3.1 Properties of Matter

Section 3.1 Properties of Matter In your textbook, read about physical properties and chemical properties of matter. Use each of the terms below just once to complete the passage. chemical mass physical

### TVA tungsten plasma parameters for hard coatings

TVA tungsten plasma parameters for hard coatings C. Porosnicu 1,M.Osiac 2,E.Osiac 3,C.P.Lungu 1 1 National Institute for Laser, Plasma and Radiation Physics, Magurele, 077125, Romania 2 Faculty of Physics,

### Chapter 7-1. Definition of ALD

Chapter 7-1 Atomic Layer Deposition (ALD) Definition of ALD Brief history of ALD ALD process and equipments ALD applications 1 Definition of ALD ALD is a method of applying thin films to various substrates

### 2 Absorbing Solar Energy

2 Absorbing Solar Energy 2.1 Air Mass and the Solar Spectrum Now that we have introduced the solar cell, it is time to introduce the source of the energy the sun. The sun has many properties that could

### PVD/PACVD Technology and Equipments of Hauzer Techno Coating

PVD/PACVD Technology and Equipments of Hauzer Techno Coating AYAME Yoshihiko : Thin Film Equipment & Coating Project Department, Industrial Machinery & Environmental Equipment Operations As a company that

### Introduction to VLSI Fabrication Technologies. Emanuele Baravelli

Introduction to VLSI Fabrication Technologies Emanuele Baravelli 27/09/2005 Organization Materials Used in VLSI Fabrication VLSI Fabrication Technologies Overview of Fabrication Methods Device simulation

### Plasma Electronic is Partner of. Tailor-Made Surfaces by Plasma Technology

Precision Fair 2013 Stand 171 Plasma Electronic is Partner of Tailor-Made Surfaces by Plasma Technology Dr. J. Geng, Plasma Electronic GmbH Modern Surface Technology in 1900 Overview A short introduction

### Reactive Sputtering Using a Dual-Anode Magnetron System

Reactive Sputtering Using a Dual-Anode Magnetron System A. Belkind and Z. Zhao, Stevens Institute of Technology, Hoboken, NJ; and D. Carter, G. McDonough, G. Roche, and R. Scholl, Advanced Energy Industries,

### DEPOSITION OF THIN ALUMINUM FILM ON ACRYLIC SUBSTRATE USING PHYSICAL VAPOR DEPOSITION TECHNIQUE (PVD)

DEPOSITION OF THIN ALUMINUM FILM ON ACRYLIC SUBSTRATE USING PHYSICAL VAPOR DEPOSITION TECHNIQUE (PVD) Marwa A. Elajel *, Sana M. Sbeta ** Plasma Research Lab., Tripoli Libya E-mail: * marwa_ali_77@yahoo.com,

### Cathodic Arc Deposition of superconducting thin films of MgB 2 for RF cavities*

Alameda Applied Sciences Corporation Cathodic Arc Deposition of superconducting thin films of MgB 2 for RF cavities* Mahadevan Krishnan, Andrew Gerhan, Kristi Wilson and Brian Bures Alameda Applied Sciences

### Module 3 : Fabrication Process and Layout Design Rules Lecture 12 : CMOS Fabrication Technologies

Module 3 : Fabrication Process and Layout Design Rules Lecture 12 : CMOS Fabrication Technologies Objectives In this course you will learn the following Introduction Twin Well/Tub Technology Silicon on

### Homework #8 203-1-1721 Physics 2 for Students of Mechanical Engineering. Part A

Homework #8 203-1-1721 Physics 2 for Students of Mechanical Engineering Part A 1. Four particles follow the paths shown in Fig. 32-33 below as they pass through the magnetic field there. What can one conclude

### Part B 2. Allow a total of 15 credits for this part. The student must answer all questions in this part.

Part B 2 Allow a total of 15 credits for this part. The student must answer all questions in this part. 51 [1] Allow 1 credit for 3 Mg(s) N 2 (g) Mg 3 N 2 (s). Allow credit even if the coefficient 1 is

### Coating Thickness and Composition Analysis by Micro-EDXRF

Application Note: XRF Coating Thickness and Composition Analysis by Micro-EDXRF www.edax.com Coating Thickness and Composition Analysis by Micro-EDXRF Introduction: The use of coatings in the modern manufacturing

### CHEMISTRY STANDARDS BASED RUBRIC ATOMIC STRUCTURE AND BONDING

CHEMISTRY STANDARDS BASED RUBRIC ATOMIC STRUCTURE AND BONDING Essential Standard: STUDENTS WILL UNDERSTAND THAT THE PROPERTIES OF MATTER AND THEIR INTERACTIONS ARE A CONSEQUENCE OF THE STRUCTURE OF MATTER,

### Damage-free, All-dry Via Etch Resist and Residue Removal Processes

Damage-free, All-dry Via Etch Resist and Residue Removal Processes Nirmal Chaudhary Siemens Components East Fishkill, 1580 Route 52, Bldg. 630-1, Hopewell Junction, NY 12533 Tel: (914)892-9053, Fax: (914)892-9068

### Plasma diagnostics focused on new magnetron sputtering devices for thin film deposition

Université Paris-Sud XI Laboratoire de Physique des Gaz et des Plasmas Orsay, France & Masaryk University in Brno Department of Physical Electronics Brno, Czech Republic Plasma diagnostics focused on new

### Handbook of Physical Vapor Deposition (PVD) Processing

Handbook of Physical Vapor Deposition (PVD) Processing Donald M. Mattox AMSTERDAM BOSTON HEIDELBERG LONDON k^tj WilliЗ.ГП F^Wm NEW YORK OXFORD PARIS SAN DIEGO Щ Л. M A 1.ЖШШша, SAN FRANCISCO SINGAPORE

### Chapter 12 - Liquids and Solids

Chapter 12 - Liquids and Solids 12-1 Liquids I. Properties of Liquids and the Kinetic Molecular Theory A. Fluids 1. Substances that can flow and therefore take the shape of their container B. Relative

### Plasma Cleaner: Physics of Plasma

Plasma Cleaner: Physics of Plasma Nature of Plasma A plasma is a partially ionized gas consisting of electrons, ions and neutral atoms or molecules The plasma electrons are at a much higher temperatures

### CHAPTER 3: MATTER. Active Learning Questions: 1-6, 9, 13-14; End-of-Chapter Questions: 1-18, 20, 24-32, 38-42, 44, 49-52, 55-56, 61-64

CHAPTER 3: MATTER Active Learning Questions: 1-6, 9, 13-14; End-of-Chapter Questions: 1-18, 20, 24-32, 38-42, 44, 49-52, 55-56, 61-64 3.1 MATTER Matter: Anything that has mass and occupies volume We study

### 2014 Spring CHEM101 Ch1-2 Review Worksheet Modified by Dr. Cheng-Yu Lai,

Ch1 1) Which of the following underlined items is not an intensive property? A) A chemical reaction requires 3.00 g of oxygen. B) The density of helium at 25 C is 1.64 10-4 g/cm3. C) The melting point

### Chap. 6 Proportional Counters

Chap. 6 Proportional Counters Consider the drift motion of an ion in a simple ion chamber. The ions will have a thermal velocity plus a component along the field lines. Then after traveling for a mean-free-path

### Abigail Pillitteri University of Florida REU participant, summer 2007 Under supervision of Dr. Ivan Kravchenko

Optical properties of Si x N y, SiO x, and SiO x N y thin films deposited by PECVD and measured by scanning electron microscopy, ellipsometry, and spectroscopy Abigail Pillitteri University of Florida

### High performance. Architectural glazings utilise thin. low-emissivity coating. Coating technology

Coating technology High performance low-emissivity coating Growing concern with energy efficiency has sparked the development of double low-emissivity coatings in architectural glass. BOC Coating has designed

### Berkeley Microlab Summer Internship 2007

Berkeley Microlab Summer Internship 2007 CPA: Al Thickness vs. Sheet Resistance Emmeline Lan Why I came Aspire to major in engineering Interested in working in hightech lab Good opportunity to learn both

### and LUMINOUS CHEMICAL VAPOR DEPOSITION INTERFACE ENGINEERING HirotsuguYasuda University of Missouri-Columbia Columbia, Missouri, U.S.A.

LUMINOUS CHEMICAL VAPOR DEPOSITION and INTERFACE ENGINEERING HirotsuguYasuda University of Missouri-Columbia Columbia, Missouri, U.S.A. MARCEL MARCEL DEKKER. NEW YORK DEKKER Contents Preface iii Part I.

### Section 10.0: Electrode Erosion

Section 10.0: Electrode Erosion The primary reason for failure of plasma torches usually involves the inability of the electrodes to operate as they were designed, or operation under adverse conditions.

### Unit 12 Practice Test

Name: Class: Date: ID: A Unit 12 Practice Test Multiple Choice Identify the choice that best completes the statement or answers the question. 1) A solid has a very high melting point, great hardness, and

### Forensic Science Standards and Benchmarks

Forensic Science Standards and Standard 1: Understands and applies principles of scientific inquiry Power : Identifies questions and concepts that guide science investigations Uses technology and mathematics

### Dry Etch Process Application Note

G-106-0405 pplication ulletin Dry Etch Process pplication Note nthony Ricci Etch Process Overview The etching process removes selected areas from wafer substrates. The two types of etching processes used

### Silicon-On-Glass MEMS. Design. Handbook

Silicon-On-Glass MEMS Design Handbook A Process Module for a Multi-User Service Program A Michigan Nanofabrication Facility process at the University of Michigan March 2007 TABLE OF CONTENTS Chapter 1...

### States of Matter CHAPTER 10 REVIEW SECTION 1. Name Date Class. Answer the following questions in the space provided.

CHAPTER 10 REVIEW States of Matter SECTION 1 SHORT ANSWER Answer the following questions in the space provided. 1. Identify whether the descriptions below describe an ideal gas or a real gas. ideal gas

### For Touch Panel and LCD Sputtering/PECVD/ Wet Processing

production Systems For Touch Panel and LCD Sputtering/PECVD/ Wet Processing Pilot and Production Systems Process Solutions with over 20 Years of Know-how Process Technology at a Glance for Touch Panel,

### Chapter Two Study Guide Answers

Chapter Two Study Guide Answers Concepts 1. Know the law of conservation of mass 2. Know about the structure of the atom and who did what including Thomson, Rutheford, Millikan, Bohr 3. Know the three

### Review - After School Matter Name: Review - After School Matter Tuesday, April 29, 2008

Name: Review - After School Matter Tuesday, April 29, 2008 1. Figure 1 The graph represents the relationship between temperature and time as heat was added uniformly to a substance starting at a solid

### Physical Vapor Deposition (PVD) Methods for Synthesis of Thin Films: A Comparative Study

Available online atwww.scholarsresearchlibrary.com Archives of Applied Science Research, 2016, 8 (5):1-8 (http://scholarsresearchlibrary.com/archive.html) ISSN 0975-508X CODEN (USA) AASRC9 Physical Vapor

### DIFFUSION IN SOLIDS. Materials often heat treated to improve properties. Atomic diffusion occurs during heat treatment

DIFFUSION IN SOLIDS WHY STUDY DIFFUSION? Materials often heat treated to improve properties Atomic diffusion occurs during heat treatment Depending on situation higher or lower diffusion rates desired

### High performance components from Gencoa for Research and Development Simply better tools to build your devices

High performance components from Gencoa for Research and Development Simply better tools to build your devices With the range of Gencoa advanced thin film development tools at your disposal your research

### h e l p s y o u C O N T R O L

contamination analysis for compound semiconductors ANALYTICAL SERVICES B u r i e d d e f e c t s, E v a n s A n a l y t i c a l g r o u p h e l p s y o u C O N T R O L C O N T A M I N A T I O N Contamination

### Untitled Document. 1. Which of the following best describes an atom? 4. Which statement best describes the density of an atom s nucleus?

Name: Date: 1. Which of the following best describes an atom? A. protons and electrons grouped together in a random pattern B. protons and electrons grouped together in an alternating pattern C. a core

### Al 2 O 3, Its Different Molecular Structures, Atomic Layer Deposition, and Dielectrics

Al 2 O 3, Its Different Molecular Structures, Atomic Layer Deposition, and Dielectrics Mark Imus Douglas Sisk, Ph.D., Mentor Marian High School RET Program University of Notre Dame Project Proposal Tunneling

### SPUTTERING OPERATIONS TABLE 12 KEY ADVANTAGES OF SPUTTERING Radio Frequency (RF) and Direct Current (DC) Diode Sputtering...

CHAPTER ONE: INTRODUCTION... 1 STUDY GOAL AND OBJECTIVES... 1 REASONS FOR DOING THE STUDY... 1 INTENDED AUDIENCE... 1 SCOPE OF REPORT... 2 METHODOLOGY... 2 INFORMATION SOURCES... 2 ANALYST S CREDENTIALS...

### Chapter Outline. 3 Elements and Compounds. Elements and Atoms. Elements. Elements. Elements 9/4/2013

3 Elements and Compounds Chapter Outline 3.1 Elements A. Distribution of Elements Foundations of College Chemistry, 14 th Ed. Morris Hein and Susan Arena Copyright This reclining Buddha in Thailand is

### SUPERCHROME PVD Coating A green alternative for chromium-galvanized plastic components. automotive interiors EXPO page 1

SUPERCHROME PVD Coating A green alternative for chromium-galvanized plastic components automotive interiors EXPO 2015 automotive interiors EXPO 2015 - page 1 Vergason Technology, Inc. Design, assembly,

### Direct Energy Influx Measurements. in Low Pressure Plasma Processes

Direct Energy Influx Measurements in Low Pressure Plasma Processes A.L. Thomann, GREMI Orléans R. Dussart, N. Semmar, J. Mathias, T. Lecas L. Bedra, P.A. Cormier, V. Dolique Outline I. Introduction: Why

### Introduction to Thin Film Technology LOT. Chair of Surface and Materials Technology

Introduction to Thin Film Introduction to Thin Film Verfahrenstechnik der Oberflächenmodifikationen Prof. Dr. Xin Jiang Lecture Institut für Werkstofftechnik der Uni-Siegen Sommersemester 2007 Introduction

### What is Laser Ablation? Mass removal by coupling laser energy to a target material

Laser Ablation Fundamentals & Applications Samuel S. Mao Department of Mechanical Engineering University of California at Berkeley Advanced Energy Technology Department March 1, 25 Laser Ablation What

### Etching and Pattern Transfer (1) OUTLINE. 6.152J / 3.155J -- Spring Term 2005 Lecture 12 - Etch and Pattern Transfer I (Wet Etch) 1.

6.15JST05.Lecture1-1 1 Etching and Pattern Transer (1) OUTLINE Basic Concepts o Etching Wet Etching Speciic Wet Etches Silicon Silicon Dioxide Aluminum Dry (Plasma) Etch eview o Plasmas eading Assignment: