Physics of Semiconductor Devices. Student Project
|
|
- Damian Carroll
- 7 years ago
- Views:
Transcription
1 Institut für Festkörperphysik Physics of Semiconductor Devices WS 2014/15 Student Project Zener Diode Student: Knoll Alexander Graz, on May 1, 2015
2 Contents 1 Problem 2 2 How does a Zener diode work? Draw a band diagram (conduction band, valence band, fermi energy) Zenertunneling How do you make a Zener diode? Explain how the two sides of the diode are doped and why Doping What is a Zener diode used for? 4 5 What is avalanche breakdown? 5 1
3 1 Problem 1. How does a Zener diode work? Draw a band diagram (conduction band, valence band, fermi energy). 2. How do you make a Zener diode? Explain how the two sides of the diode are doped and why. 3. What is a Zener diode used for? 4. What is avalanche breakdown? 2 How does a Zener diode work? Draw a band diagram (conduction band, valence band, fermi energy). Zener diodes are semiconductor diodes which have been manufactured to have their reverse breakdown occur at a specific, well-defined voltage (its Zener voltage), and that are designed such that they can be operated continuously in that breakdown mode. Commonly available Zener diodes are available with breakdown voltages (Zener voltages) anywhere from 1.8 to 200 V. Figure 1: Symbol of a Zener diode. 2.1 Zenertunneling The diode works through Zener tunneling. That is a band to band tunneling. You tunnel from the Valence band to the conduction band. And this can only happen when you put enough reverse bias voltage that you lift the top of the valence band above the bottom of the conduction band. But there is another condition for Zener tunneling and that is that the distance from the p-side to the n-side must not be to far, because tunneling can only go a short distance. So you must dope the p and n side very heavily so that you get a narrow depletion width. Such the way that when you apply a reverse bias voltage, the electrons can tunnel through. If you have low doping, the depletion width get to wide so the electrons can t tunnel through. 2
4 Figure 2: Characteristic of a Zener diode. The characteristic looks like figure 2. In forward bias it turns on exponetially. In reversed bias you see the reverse saturation current. And at a specific voltage you reach the condition described in 2.1. Then suddenly because of tunneling you get a very strong turnon current. You can design the doping so that this onset occurse on a voltage you are choosing. So you can make Zener diodes with specific reverse breakdown voltage. The breakdown voltage is typically much lower than the breakdown voltage of an avalanche diode and can be tuned by adjusting the width of the deletion layer. Lower doping - higher breakdown voltage. Figure 3: Band diagramm. 3
5 3 How do you make a Zener diode? Explain how the two sides of the diode are doped and why. 3.1 Doping Figure 4: Diode fabrication. The distance from the p-side to the n-side must not be to far, because tunneling can only go a short distance. So you must dope the p and n side very heavily so that you get a narrow depletion width. Such that way that when you apply a reverse bias voltage, the electrons can tunnel through. If you have low doping, the depletion width get to wide so the electrons can t tunnel through. 4 What is a Zener diode used for? They are mostly used as reference voltage, but can also be used for overvoltage protection or voltage stabilisation. 4
6 5 What is avalanche breakdown? Avalanche breakdown happens through something called impact ionization. You have the diode reversed biased and for a large reverse bias there is a large electric field in depletion area. There are some carriers present and if they get accelerated to an energie that is larger than the Bandgap they can knock an electron out of the valance band and put it up into the conduction band. And you get another electron that s in this large electric field and this get also accelerated and knocks another electron out of the valance band and puts it up into the conduction band. You generate some heat and so the effect gets faster, and you get a lots of electrons moving and this is avalanche breakdown. Graz, on May 1,
ENEE 313, Spr 09 Midterm II Solution
ENEE 313, Spr 09 Midterm II Solution PART I DRIFT AND DIFFUSION, 30 pts 1. We have a silicon sample with non-uniform doping. The sample is 200 µm long: In the figure, L = 200 µm= 0.02 cm. At the x = 0
More informationLAB IV. SILICON DIODE CHARACTERISTICS
LAB IV. SILICON DIODE CHARACTERISTICS 1. OBJECTIVE In this lab you are to measure I-V characteristics of rectifier and Zener diodes in both forward and reverse-bias mode, as well as learn to recognize
More informationSemiconductors, diodes, transistors
Semiconductors, diodes, transistors (Horst Wahl, QuarkNet presentation, June 2001) Electrical conductivity! Energy bands in solids! Band structure and conductivity Semiconductors! Intrinsic semiconductors!
More information3. Diodes and Diode Circuits. 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1
3. Diodes and Diode Circuits 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1 3.1 Diode Characteristics Small-Signal Diodes Diode: a semiconductor device, which conduct the current
More informationSMA5111 - Compound Semiconductors Lecture 2 - Metal-Semiconductor Junctions - Outline Introduction
SMA5111 - Compound Semiconductors Lecture 2 - Metal-Semiconductor Junctions - Outline Introduction Structure - What are we talking about? Behaviors: Ohmic, rectifying, neither Band picture in thermal equilibrium
More informationCONTENTS. Preface. 1.1.2. Energy bands of a crystal (intuitive approach)
CONTENTS Preface. Energy Band Theory.. Electron in a crystal... Two examples of electron behavior... Free electron...2. The particle-in-a-box approach..2. Energy bands of a crystal (intuitive approach)..3.
More informationCHAPTER 10 Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
CHAPTER 10 Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor Study the characteristics of energy bands as a function of applied voltage in the metal oxide semiconductor structure known
More informationSpecial-Purpose Diodes
7 Special-Purpose Diodes 7.1 Zener Diode 7.2 Light-Emitting Diode (LED) 7.3 LED Voltage and Current 7.4 Advantages of LED 7.5 Multicolour LEDs 7.6 Applications of LEDs 7.7 Photo-diode 7.8 Photo-diode operation
More informationCrystalline solids. A solid crystal consists of different atoms arranged in a periodic structure.
Crystalline solids A solid crystal consists of different atoms arranged in a periodic structure. Crystals can be formed via various bonding mechanisms: Ionic bonding Covalent bonding Metallic bonding Van
More informationSolid State Detectors = Semi-Conductor based Detectors
Solid State Detectors = Semi-Conductor based Detectors Materials and their properties Energy bands and electronic structure Charge transport and conductivity Boundaries: the p-n junction Charge collection
More informationDiodes and Transistors
Diodes What do we use diodes for? Diodes and Transistors protect circuits by limiting the voltage (clipping and clamping) turn AC into DC (voltage rectifier) voltage multipliers (e.g. double input voltage)
More informationTheory of Transistors and Other Semiconductor Devices
Theory of Transistors and Other Semiconductor Devices 1. SEMICONDUCTORS 1.1. Metals and insulators 1.1.1. Conduction in metals Metals are filled with electrons. Many of these, typically one or two per
More informationCharacteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination
Vol. 31, No. 7 Journal of Semiconductors July 2010 Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination Zhang Qian( 张 倩 ), Zhang Yuming( 张 玉 明 ), and Zhang Yimen( 张 义 门
More informationMOS (metal-oxidesemiconductor) 李 2003/12/19
MOS (metal-oxidesemiconductor) 李 2003/12/19 Outline Structure Ideal MOS The surface depletion region Ideal MOS curves The SiO 2 -Si MOS diode (real case) Structure A basic MOS consisting of three layers.
More informationHigh Open Circuit Voltage of MQW Amorphous Silicon Photovoltaic Structures
High Open Circuit Voltage of MQW Amorphous Silicon Photovoltaic Structures ARGYRIOS C. VARONIDES Physics and EE Department University of Scranton 800 Linden Street, Scranton PA, 18510 United States Abstract:
More informationDiode Circuits. Operating in the Reverse Breakdown region. (Zener Diode)
Diode Circuits Operating in the Reverse Breakdown region. (Zener Diode) In may applications, operation in the reverse breakdown region is highly desirable. The reverse breakdown voltage is relatively insensitive
More informationRegulated D.C. Power Supply
442 17 Principles of Electronics Regulated D.C. Power Supply 17.1 Ordinary D.C. Power Supply 17.2 Important Terms 17.3 Regulated Power Supply 17.4 Types of Voltage Regulators 17.5 Zener Diode Voltage Regulator
More informationBasic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-2 Transistor
More informationBipolar Junction Transistor Basics
by Kenneth A. Kuhn Sept. 29, 2001, rev 1 Introduction A bipolar junction transistor (BJT) is a three layer semiconductor device with either NPN or PNP construction. Both constructions have the identical
More information05 Bipolar Junction Transistors (BJTs) basics
The first bipolar transistor was realized in 1947 by Brattain, Bardeen and Shockley. The three of them received the Nobel prize in 1956 for their invention. The bipolar transistor is composed of two PN
More informationBJT Ebers-Moll Model and SPICE MOSFET model
Department of Electrical and Electronic Engineering mperial College London EE 2.3: Semiconductor Modelling in SPCE Course homepage: http://www.imperial.ac.uk/people/paul.mitcheson/teaching BJT Ebers-Moll
More informationV-I CHARACTERISTICS OF DIODE
V-I CHARACTERISTICS OF DIODE RAVITEJ UPPU 1 1. Aim We try to see the Voltage-Current realtion in Diodes and compare the difference between various types of diodes including Zener Diode. 2. Theory The diode
More informationFigure 1. Diode circuit model
Semiconductor Devices Non-linear Devices Diodes Introduction. The diode is two terminal non linear device whose I-V characteristic besides exhibiting non-linear behavior is also polarity dependent. The
More informationDiodes. 1 Introduction 1 1.1 Diode equation... 2 1.1.1 Reverse Bias... 2 1.1.2 Forward Bias... 2 1.2 General Diode Specifications...
Diodes Contents 1 Introduction 1 1.1 Diode equation................................... 2 1.1.1 Reverse Bias................................ 2 1.1.2 Forward Bias................................ 2 1.2 General
More informationLecture 17. Bipolar Junction Transistors (BJT): Part 1 Qualitative Understanding - How do they work? Reading: Pierret 10.1-10.6, 11.
Lecture 17 Bipolar Junction Transistors (BJT): Part 1 Qualitative Understanding - How do they work? Reading: Pierret 10.1-10.6, 11.1 Looks sort of like two diodes back to back pnp mnemonic: Pouring N Pot
More informationThe Physics of Energy sources Renewable sources of energy. Solar Energy
The Physics of Energy sources Renewable sources of energy Solar Energy B. Maffei Bruno.maffei@manchester.ac.uk Renewable sources 1 Solar power! There are basically two ways of using directly the radiative
More informationFundamentals of Microelectronics
Fundamentals of Microelectronics H1 Why Microelectronics? H2 Basic Physics of Semiconductors H3 Diode ircuits H4 Physics of Bipolar ransistors H5 Bipolar Amplifiers H6 Physics of MOS ransistors H7 MOS
More informationBASIC ELECTRICAL AND ELECTRONICS ENGINEERING
Questions and Answers for Units III, IV & V I B.Tech I Sem BASIC ELECTRICAL AND ELECTRONICS ENGINEERING N. Madhusudhana Rao Department of ECE GRIET Syllabus UNIT I: ELECTRICAL and SINGLE PHASE AC CIRCUITS
More informationSEMICONDUCTOR DEVICE FUNDAMENTALS
SEMICONDUCTOR DEVICE FUNDAMENTALS Robert F. Pierret School of Electrical and Computer Engineering Purdue University Addison Wesley Longman Reading, Massachusetts Menlo Park, California New York Don Mills,
More informationBASIC LAB 1 INTRODUCTION TO BASIC PROCESS SIMULATION USING TSUPREM4 & TWB
SEMICONDUCTOR PHYSICS EMT 471/3 BASIC LAB REPORT BASIC LABS: 1, 2, 3, 4 NAME MATRIC NO. BASIC LAB 1 2 3 4 TOTAL MARKS : MARKS 59 BASIC LAB 1 INTRODUCTION TO BASIC PROCESS SIMULATION USING TSUPREM4 & TWB
More informationTransistor Models. ampel
Transistor Models Review of Transistor Fundamentals Simple Current Amplifier Model Transistor Switch Example Common Emitter Amplifier Example Transistor as a Transductance Device - Ebers-Moll Model Other
More informationSolid-State Physics: The Theory of Semiconductors (Ch. 10.6-10.8) SteveSekula, 30 March 2010 (created 29 March 2010)
Modern Physics (PHY 3305) Lecture Notes Modern Physics (PHY 3305) Lecture Notes Solid-State Physics: The Theory of Semiconductors (Ch. 10.6-10.8) SteveSekula, 30 March 2010 (created 29 March 2010) Review
More informationFundamental Characteristics of Thyristors
A1001 Introduction The Thyristor family of semiconductors consists of several very useful devices. The most widely used of this family are silicon controlled rectifiers (SCRs), Triacs, SIDACs, and DIACs.
More informationAmplifier Teaching Aid
Amplifier Teaching Aid Table of Contents Amplifier Teaching Aid...1 Preface...1 Introduction...1 Lesson 1 Semiconductor Review...2 Lesson Plan...2 Worksheet No. 1...7 Experiment No. 1...7 Lesson 2 Bipolar
More informationHello and Welcome to this presentation on LED Basics. In this presentation we will look at a few topics in semiconductor lighting such as light
Hello and Welcome to this presentation on LED Basics. In this presentation we will look at a few topics in semiconductor lighting such as light generation from a semiconductor material, LED chip technology,
More informationAN3022. Establishing the Minimum Reverse Bias for a PIN Diode in a High-Power Switch. 1. Introduction. Rev. V2
Abstract - An important circuit design parameter in a high-power p-i-n diode application is the selection of an appropriate applied dc reverse bias voltage. Until now, this important circuit parameter
More informationAMPLIFIERS BJT BJT TRANSISTOR. Types of BJT BJT. devices that increase the voltage, current, or power level
AMPLFERS Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd devices that increase the voltage, current, or power level have at least three terminals with one controlling the flow between
More informationSilicon Controlled Rectifiers
554 20 Principles of Electronics Silicon Controlled Rectifiers 20.1 Silicon Controlled Rectifier (SCR) 20.2 Working of SCR 20.3 Equivalent Circuit of SCR 20.4 Important Terms 20.5 V-I Characteristics of
More informationUnderstanding the p-n Junction by Dr. Alistair Sproul Senior Lecturer in Photovoltaics The Key Centre for Photovoltaic Engineering, UNSW
Understanding the p-n Junction by Dr. Alistair Sproul Senior Lecturer in Photovoltaics The Key Centre for Photovoltaic Engineering, UNSW The p-n junction is the fundamental building block of the electronic
More informationSupplement Reading on Diode Circuits. http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf
EE40 Lec 18 Diode Circuits Reading: Chap. 10 of Hambley Supplement Reading on Diode Circuits http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf Slide 1 Diodes Circuits Load
More information(Amplifying) Photo Detectors: Avalanche Photodiodes Silicon Photomultiplier
(Amplifying) Photo Detectors: Avalanche Photodiodes Silicon Photomultiplier (no PiN and pinned Diodes) Peter Fischer P. Fischer, ziti, Uni Heidelberg, Seite 1 Overview Reminder: Classical Photomultiplier
More informationApplication Notes FREQUENCY LINEAR TUNING VARACTORS FREQUENCY LINEAR TUNING VARACTORS THE DEFINITION OF S (RELATIVE SENSITIVITY)
FREQUENY LINEAR TUNING VARATORS FREQUENY LINEAR TUNING VARATORS For several decades variable capacitance diodes (varactors) have been used as tuning capacitors in high frequency circuits. Most of these
More informationBASIC ELECTRONICS TRANSISTOR THEORY. December 2011
AM 5-204 BASIC ELECTRONICS TRANSISTOR THEORY December 2011 DISTRIBUTION RESTRICTION: Approved for Public Release. Distribution is unlimited. DEPARTMENT OF THE ARMY MILITARY AUXILIARY RADIO SYSTEM FORT
More informationDavid L. Senasack June, 2006 Dale Jackson Career Center, Lewisville Texas. The PN Junction
David L. Senasack June, 2006 Dale Jackson Career Center, Lewisville Texas The PN Junction Objectives: Upon the completion of this unit, the student will be able to; name the two categories of integrated
More informationCMOS Photodetectors. Albert H. Titus 1, Maurice C-K. Cheung 2 and Vamsy P. Chodavarapu 2 1 Department of Electrical Engineering, University at
4 CMOS Photodetectors Albert H. Titus 1, Maurice C-K. Cheung 2 and Vamsy P. Chodavarapu 2 1 Department of Electrical Engineering, University at Buffalo, The State University of New York 2 Electrical and
More informationEDC Lesson 12: Transistor and FET Characteristics. 2008 EDCLesson12- ", Raj Kamal, 1
EDC Lesson 12: Transistor and FET Characteristics Lesson-12: MOSFET (enhancement and depletion mode) Characteristics and Symbols 2008 EDCLesson12- ", Raj Kamal, 1 1. Metal Oxide Semiconductor Field Effect
More informationMeasuring Silicon and Germanium Band Gaps using Diode Thermometers
Measuring Silicon and Germanium Band Gaps using Diode Thermometers Haris Amin Department of Physics, Wabash College, Crawfordsville, IN 47933 (Dated: April 11, 2007) This paper reports the band gaps of
More informationBasics of LED drivers. Functions Requirements Selection
Andreas Hagemeyer Master of Science 05.2015 This article is meant to provide the reader with basic knowledge about the functional principle of LED luminaires, to explain the requirements for an LED driver
More informationCAR IGNITION WITH IGBTS
APPLICATION NOTE CAR IGNITION WITH IGBTS by M. Melito ABSTRACT IGBTs are used in a variety of switching applications thanks to their attractive characteristics, particularly their peak current capability,
More informationI-V Characteristics of BJT Common-Emitter Output Characteristics
I-V Characteristics of BJT Common-Emitter Output Characteristics C i C C i C B v CE B v EC i B E i B E Lecture 26 26-1 To illustrate the I C -V CE characteristics, we use an enlarged β R Collector Current
More information7. The current voltage characteristic of electric conductors
KL 7. The current voltage characteristic of electric conductors 7.1 ntroduction The purpose of the present laboratory is to measure the current voltage characteristic of different conducting components.
More informationField-Effect (FET) transistors
Field-Effect (FET) transistors References: Hayes & Horowitz (pp 142-162 and 244-266), Rizzoni (chapters 8 & 9) In a field-effect transistor (FET), the width of a conducting channel in a semiconductor and,
More informationLab 1 Diode Characteristics
Lab 1 Diode Characteristics Purpose The purpose of this lab is to study the characteristics of the diode. Some of the characteristics that will be investigated are the I-V curve and the rectification properties.
More informationThe MOSFET Transistor
The MOSFET Transistor The basic active component on all silicon chips is the MOSFET Metal Oxide Semiconductor Field Effect Transistor Schematic symbol G Gate S Source D Drain The voltage on the gate controls
More informationAvalanche Photodiodes: A User's Guide
!"#$%& Abstract Avalanche Photodiodes: A User's Guide Avalanche photodiode detectors have and will continue to be used in many diverse applications such as laser range finders and photon correlation studies.
More informationVaractor Diodes. Introduction. Key Electrical Parameters. Reverse Breakdown Voltage and Reverse Leakage Current APPLICATION NOTE
APPLICATION NOTE Varactor Diodes Introduction A varactor diode is a P-N junction diode that changes its capacitance and the series resistance as the bias applied to the diode is varied. The property of
More informationGenTech Practice Questions
GenTech Practice Questions Basic Electronics Test: This test will assess your knowledge of and ability to apply the principles of Basic Electronics. This test is comprised of 90 questions in the following
More informationModule 1. Power Semiconductor Devices. Version 2 EE IIT, Kharagpur 1
Module 1 Power Semiconductor Devices Version 2 EE IIT, Kharagpur 1 Lesson 2 Constructional Features, Operating Principle, Characteristics and Specification of Power Semiconductor Diode Version 2 EE IIT,
More information(!' ) "' # "*# "!(!' +,
( Controls Signal Processing Telecommunications Network and processor modeling and simulation http://www.mathworks.com/academia/classroom-resources/departments/electrical-computerengineering.html ( MATLAB
More informationBJT Circuit Configurations
BJT Circuit Configurations V be ~ ~ ~ v s R L v s R L V Vcc R s cc R s v s R s R L V cc Common base Common emitter Common collector Common emitter current gain BJT Current-Voltage Characteristics V CE,
More informationPower Supplies. 1.0 Power Supply Basics. www.learnabout-electronics.org. Module
Module 1 www.learnabout-electronics.org Power Supplies 1.0 Power Supply Basics What you ll learn in Module 1 Section 1.0 Power Supply Basics. Basic functions of a power supply. Safety aspects of working
More informationSEMICONDUCTOR I: Doping, semiconductor statistics (REF: Sze, McKelvey, and Kittel)
SEMICONDUCTOR I: Doping, semiconductor statistics (REF: Sze, McKelvey, and Kittel) Introduction Based on known band structures of Si, Ge, and GaAs, we will begin to focus on specific properties of semiconductors,
More informationFourth generation MOSFET model and its VHDL-AMS implementation
Fourth generation MOSFET model and its VHDL-AMS implementation Fabien Prégaldiny and Christophe Lallement fabien.pregaldiny@phase.c-strasbourg.fr ERM-PHASE, Parc d innovation, BP 10413, 67412 Illkirch
More informationLecture - 4 Diode Rectifier Circuits
Basic Electronics (Module 1 Semiconductor Diodes) Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Lecture - 4 Diode Rectifier Circuits
More informationZetex Variable Capacitance Diodes
Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products.
More informationFabrication and Characterization of N- and P-Type a-si:h Thin Film Transistors
Fabrication and Characterization of N- and P-Type a-si:h Thin Film Transistors Engineering Practical Jeffrey Frederick Gold Fitzwilliam College University of Cambridge Lent 1997 FABRCATON AND CHARACTERZATON
More informationDesign Project: Power inverter
Design Project: Power inverter This worksheet and all related files are licensed under the Creative Commons Attribution License, version 1.0. To view a copy of this license, visit http://creativecommons.org/licenses/by/1.0/,
More informationProject 2B Building a Solar Cell (2): Solar Cell Performance
April. 15, 2010 Due April. 29, 2010 Project 2B Building a Solar Cell (2): Solar Cell Performance Objective: In this project we are going to experimentally measure the I-V characteristics, energy conversion
More informationEvaluation of the Surface State Using Charge Pumping Methods
Evaluation of the Surface State Using Charge Pumping Methods Application Note 4156-9 Agilent 4155C/4156C Semiconductor Parameter Analyzer Introduction As device features get smaller, hot carrier induced
More informationStudy Guide for the Electronics Technician Pre-Employment Examination
Bay Area Rapid Transit District Study Guide for the Electronics Technician Pre-Employment Examination INTRODUCTION The Bay Area Rapid Transit (BART) District makes extensive use of electronics technology
More informationTHE BASICS OF PLL FREQUENCY SYNTHESIS
Supplementary Reading for 27 - Oscillators Ron Bertrand VK2DQ http://www.radioelectronicschool.com THE BASICS OF PLL FREQUENCY SYNTHESIS The phase locked loop (PLL) method of frequency synthesis is now
More informationPlots, Curve-Fitting, and Data Modeling in Microsoft Excel
Plots, Curve-Fitting, and Data Modeling in Microsoft Excel This handout offers some tips on making nice plots of data collected in your lab experiments, as well as instruction on how to use the built-in
More informationApplication Note AN-1005
Application Note AN-1005 Power MOSFET Avalanche Design Guidelines By Tim McDonald, Marco Soldano, Anthony Murray, Teodor Avram Table of Contents Page Table of Figures...3 Introduction...4 Overview...4
More informationOperating Manual Ver.1.1
Silicon, Zener, LED Diode Characteristics Operating Manual Ver.1.1 An ISO 9001 : 2000 company 94-101, Electronic Complex Pardesipura, Indore- 452010, India Tel : 91-731- 2570301/02, 4211100 Fax: 91-731-
More informationNew High Current MOSFET Module Offers 177 µω R DS(on)
ew High Current Offers 177 µω R D(on) By William C. Kephart, Eric R. Motto Application Engineering owerex Incorporated Abstract This paper describes a new family of high current modules optimized for industrial
More informationCharacteristic curves of a solar cell
Related Topics Semi-conductor, p-n junction, energy-band diagram, Fermi characteristic energy level, diffusion potential, internal resistance, efficiency, photo-conductive effect, acceptors, donors, valence
More information1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBTG Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
More informationYrd. Doç. Dr. Aytaç Gören
H2 - AC to DC Yrd. Doç. Dr. Aytaç Gören ELK 2018 - Contents W01 Basic Concepts in Electronics W02 AC to DC Conversion W03 Analysis of DC Circuits W04 Transistors and Applications (H-Bridge) W05 Op Amps
More informationUnclamped Inductive Switching Rugged MOSFETs For Rugged Environments
Unclamped Inductive Switching Rugged MOSFETs For Rugged Environments AN61 The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness
More informationH a r d C o m m u t a t i o n o f P o w e r M O S F E T
H a r d C o m m u t a t i o n o f P o w e r M O S F E T O p t i M O S TM F D 2 0 0 V / 2 5 0 V IFAT PMM APS SE DC Alan Huang Edition 2014-03-12 Published by Infineon Technologies Austria AG 9500 Villach,
More informationFundamental Theory of Piezotronics
www.materialsviews.com Fundamental Theory of Piezotronics Yan Zhang, Ying Liu, and Zhong Lin Wang * Due to polarization of ions in crystals with noncentral symmetry, such as ZnO, GaN, and InN, a piezoelectric
More informationProperties of electrical signals
DC Voltage Component (Average voltage) Properties of electrical signals v(t) = V DC + v ac (t) V DC is the voltage value displayed on a DC voltmeter Triangular waveform DC component Half-wave rectifier
More informationBIPOLAR JUNCTION TRANSISTORS
CHAPTER 3 BIPOLAR JUNCTION TRANSISTORS A bipolar junction transistor, BJT, is a single piece of silicon with two back-to-back P-N junctions. However, it cannot be made with two independent back-to-back
More informationSemiconductor doping. Si solar Cell
Semiconductor doping Si solar Cell Two Levels of Masks - photoresist, alignment Etch and oxidation to isolate thermal oxide, deposited oxide, wet etching, dry etching, isolation schemes Doping - diffusion/ion
More informationLecture 12: DC Analysis of BJT Circuits.
Whites, 320 Lecture 12 Page 1 of 9 Lecture 12: D Analysis of JT ircuits. n this lecture we will consider a number of JT circuits and perform the D circuit analysis. For those circuits with an active mode
More informationFollowing are definitions for major parameters to consider when selecting a power line polarity protection diode for an automotive application.
Diode rectifiers are ideal solutions for automotive electronic power line protection and have several important parameters for these applications, including: Forward current, repetitive reverse voltage,
More informationPhotonic Reservoir Computing with coupled SOAs
Photonic Reservoir Computing with coupled SOAs Kristof Vandoorne, Wouter Dierckx, David Verstraete, Benjamin Schrauwen, Roel Baets, Peter Bienstman and Jan Van Campenhout OSC 2008: August 26 Intelligence
More informationSilicon Sensors for CMS Tracker at High-Luminosity Environment - Challenges in particle detection -
timo.peltola@helsinki.fi Finnish Society for Natural Philosophy, Helsinki, 17 February 2015 Silicon Sensors for CMS Tracker at High-Luminosity Environment - Challenges in particle detection - Timo Peltola
More informationFrom Nano-Electronics and Photonics to Renewable Energy
From Nano-Electronics and Photonics to Renewable Energy Tom Smy Department of Electronics, Carleton University Questions are welcome! OUTLINE Introduction: to EE and Engineering Physics Renewable Energy
More informationELECTRICAL CONDUCTION
Chapter 12: Electrical Properties Learning Objectives... How are electrical conductance and resistance characterized? What are the physical phenomena that distinguish conductors, semiconductors, and insulators?
More informationLab Report No.1 // Diodes: A Regulated DC Power Supply Omar X. Avelar Omar de la Mora Diego I. Romero
Instituto Tecnológico y de Estudios Superiores de Occidente (ITESO) Periférico Sur Manuel Gómez Morín 8585, Tlaquepaque, Jalisco, México, C.P. 45090 Analog Electronic Devices (ESI038 / SE047) Dr. Esteban
More informationIntroduction to Paralleling of LTC Transformers by the Circulating Current Method
TAPCHANGER CONTROLS Application Note #11 Introduction to Paralleling of LTC Transformers by the Circulating Current Method 1.0 ABSTRACT This Application Note discusses the elements of paralleling load
More information3.3 kv IGBT Modules. Takeharu Koga Yasuhiko Arita Takatoshi Kobayashi. 1. Introduction. 2. Specifications of 3.3 kv IGBT Module
3.3 kv IGBT Modules Takeharu Koga Yasuhiko Arita Takatoshi Kobayashi A B S T R A C T Fuji Electric has developed a 3.3 kv-1.2 ka IGBT module in response to market needs for inverters suitable for industrial
More informationLB1836M. Specifications. Monolithic Digital IC Low-Saturation Bidirectional Motor Driver for Low-Voltage Drive. Absolute Maximum Ratings at Ta = 25 C
Ordering number : EN397F LB136M Monolithic Digital IC Low-Saturation Bidirectional Motor Driver for Low-Voltage Drive http://onsemi.com Overview The LB136M is a low-saturation two-channel bidirectional
More informationLecture 9 MOSFET(II) MOSFET I-V CHARACTERISTICS(contd.)
Lecture 9 MOSFET(II) MOSFET I-V CHARACTERISTICS(contd.) Outline 1. The saturation regime 2. Backgate characteristics Reading Assignment: Howe and Sodini, Chapter 4, Section 4.4 Announcements: 1. Quiz#1:
More informationJunction FETs. FETs. Enhancement Not Possible. n p n p n p
A11 An Introduction to FETs Introduction The basic principle of the field-effect transistor (FET) has been known since J. E. Lilienfeld s patent of 1925. The theoretical description of a FET made by hockley
More informationExperiment 2 Diode Applications: Rectifiers
ECE 3550 - Practicum Fall 2007 Experiment 2 Diode Applications: Rectifiers Objectives 1. To investigate the characteristics of half-wave and full-wave rectifier circuits. 2. To recognize the usefulness
More informationChapter 4. LLC Resonant Converter
Chapter 4 LLC Resonant Converter 4.1 Introduction In previous chapters, the trends and technical challenges for front end DC/DC converter were discussed. High power density, high efficiency and high power
More informationOBJECTIVE QUESTIONS IN ANALOG ELECTRONICS
1. The early effect in a bipolar junction transistor is caused by (a) fast turn-on (c) large collector-base reverse bias (b)fast turn-off (d) large emitter-base forward bias 2. MOSFET can be used as a
More informationLecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS
Lecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS Outline 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation 3. I-V characteristics Reading Assignment: Howe and Sodini, Chapter 4, Sections
More information