IRAMY20UP60B Series 20A, 600V with Internal Shunt Resistor

Transcription

1 Integrated Power Hybrid IC for Appliance Motor Drive Applications. Features PD Rev.C IRAMY20UP60B Series 20A, 600V with Internal Shunt Resistor Description International Rectifier's IRAMY20UP60B is a 20A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as well as for light industrial application. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low V CE(on) Non Punch-Through IGBT technology and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in temperature monitor and over-current and over-temperature protections, along with the shortcircuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and failsafe operation. Using a newly developed single in line package (SiP3) with heatspreader for the power die along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink. UL certified. Integrated Gate Drivers Temperature Monitor and Protection Overcurrent shutdown Fully Isolated Package Low VCE (on) Non Punch Through IGBT Technology. Undervoltage lockout for all channels Matched propagation delay for all channels 5V Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.75~2.2kW / 85~253 Vac Isolation 2000V RMS min UL Certificate Number: E Absolute Maximum Ratings Parameter Description Value Units V CES / V RRM IGBT/Diode Blocking Voltage 600 V + Positive Bus Input Voltage 450 V I T C =25 C RMS Phase Current (Note 1) 20 I T C =100 C RMS Phase Current (Note 1) 10 A I O Pulsed RMS Phase Current (Note 2) 40 PWM Carrier Frequency 20 khz P D Power dissipation per T C =25 C 68 W V ISO Isolation Voltage (1min) 2000 V RMS T J (IGBT & Diodes) Operating Junction temperature Range -40 to +150 C T J (Driver IC) Operating Junction temperature Range -40 to +150 T Mounting torque Range (M4 screw) 0.7 to 1.17 Nm Note 1: Sinusoidal Modulation at V + =400V, T J =150 C, =20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: t P <100ms; T C =25 C; =20kHz. Limited by I BUS-ITRIP, see Table "Inverter Section Electrical Characteristics" 1

2 Internal Electrical Schematic - IRAMY20UP60B V + (10) V - (12) VB1 (1) U, VS1 (2) VB2 (4) V, VS2 (5) VB3 (7) W, VS3 (8) 23 VS1 24 HO1 22 VB2 21 HO2 20 VS2 19 VB3 18 HO3 17 VS3 LO1 16 HIN1 (13) HIN2 (14) HIN3 (15) 25 VB1 1 VCC 2 HIN1 3 HIN2 4 HIN3 Driver IC LO2 15 LO3 14 LIN1 (16) 5 LIN1 LIN2 6 LIN3 7 F 8 ITRIP 9 EN 10 RCIN 11 VSS 12 COM 13 LIN2 (17) LIN3 (18) F/T Mon (19) THERMISTOR I TRIP (20) POSISTOR V CC (21) V SS (22) 2

3 Absolute Maximum Ratings (Continued) All voltages are absolute referenced to COM/I TRIP. Symbol Parameter Min Max Units I BDF Bootstrap Diode Peak Forward Current A P BR Peak Bootstrap Resistor Peak Power (Single Pulse) W V S1,2,3 High side floating supply offset voltage V B1,2,3-25 V B1,2, V Conditions t P = 10ms, T J = 150 C, T C =100 C t P =100µs, T C =100 C ESR / ERJ series V B1,2,3 High side floating supply voltage V V CC Low Side and logic fixed supply voltage V IN Input voltage LIN, HIN, I Trip V Lower of (V SS +15V) or V CC +0.3V V Inverter Section Electrical J = 25 C Symbol Parameter Min Typ Max Units V (BR)CES Collector-to-Emitter Breakdown Voltage V V (BR)CES / T Temperature Coeff. Of Breakdown Voltage V/ C V CE(ON) I CES Collector-to-Emitter Saturation Zero Gate Voltage Collector Voltage Current V µa V FM Diode Forward Voltage Drop V V BDFM Bootstrap Diode Forward Voltage Drop V R BR Bootstrap Resistor Value Ω R BR /R BR Bootstrap Resistor Tolerance ±5 % I BUS_TRIP Current Protection Threshold (positive going) A Conditions V IN =5V, I C =250µA V IN =5V, I C =1.0mA (25 C C) I C =10A, V CC =15V I C =10A, V CC =15V, T J =125 C V IN =5V, V + =600V V IN =5V, V + =600V, T J =125 C I C =10A I C =10A, T J =125 C I F =1A I F =1A, T J =125 C T J =25 C T J =25 C T J =-40 C to 125 C See Fig

4 Inverter Section Switching T J = 25 C Symbol Parameter Min Typ Max Units E ON Turn-On Switching Loss E OFF Turn-Off Switching Loss µj E TOT Total Switching Loss E REC Diode Reverse Recovery energy t RR Diode Reverse Recovery time ns E ON Turn-On Switching Loss E OFF Turn-off Switching Loss µj E TOT Total Switching Loss E REC Diode Reverse Recovery energy t RR Diode Reverse Recovery time ns Q G Turn-On IGBT Gate Charge nc Conditions I C =10A, V + =400V V CC =15V, L=2mH Energy losses include "tail" and diode reverse recovery I C =15A, V + =400V, V GE =15V See CT1 I C =10A, V + =400V V CC =15V, L=2mH, T J =125 C Energy losses include "tail" and diode reverse recovery See CT1 T J =150 C, I C =10A, V P =600V RBSOA Reverse Bias Safe Operating Area FULL SQUARE V + = 450V V CC =+15V to 0V See CT3 SCSOA Short Circuit Safe Operating Area µs T J =150 C, V P =600V, V + = 360V, V CC =+15V to 0V See CT2 I CSC Short Circuit Collector Current A T J =150 C, V P =600V, t SC <10µs V + = 360V, V GE =15V V CC =+15V to 0V See CT2 Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommende conditions. All voltages are absolute referenced to COM/I TRIP. The V S offset is tested with all supplies biased at 15V differential (Note 3) Symbol Definition Min Max Units V B1,2,3 High side floating supply voltage V S +12 V S +20 V S1,2,3 High side floating supply offset voltage Note V CC Low side and logic fixed supply voltage V ITRIP I TRIP input voltage V SS V SS +5 V V V IN Logic input voltage LIN, HIN V SS V SS +5 V Note 3: For more details, see IR21363 data sheet Note 4: Logic operational for V s from COM/I TRIP -5V to COM/ITRIP+600V. Logic state held for V s from COM/ITRIP-5V to COM/ITRIP-V BS. 4

5 Static Electrical Characteristics Driver Function IRAMY20UP60B V BIAS (V CC, V BS1,2,3 )=15V, unless otherwise specified. The V IN and I IN parameters are referenced to COM/I TRIP and are applicable to all six channels. (Note 3) Symbol Definition Min Typ Max Units V IH Logic "0" input voltage V V IL Logic "1" input voltage V V CCUV+, V BSUV+ V CC and V BS supply undervoltage positive going threshold V V CCUV-, V BSUV- V CC and V BS supply undervoltage negative going threshold V V CCUVH, V BSUVH V CC and V BS supply undervoltage lock-out hysteresis V V IN,Clamp Input Clamp Voltage (HIN, LIN, T/I TRIP ) I IN =10µA V I QBS Quiescent V BS supply current V IN =0V µa I QCC Quiescent V CC supply current V IN =0V ma I LK Offset Supply Leakage Current µa I IN+ Input bias current V IN =5V µa I IN- Input bias current V IN =0V µa I TRIP+ I TRIP bias current V ITRIP =5V µa I TRIP- I TRIP bias current V ITRIP =0V µa V(I TRIP ) I TRIP threshold Voltage mv V(I TRIP,HYS) I TRIP Input Hysteresis mv Dynamic Electrical Characteristics Driver only timing unless otherwise specified.) Symbol Parameter Min Typ Max Units Conditions T ON Input to Output propagation turn-on delay time (see fig.11) ns T OFF Input to Output propagation turn-off delay time (see fig. 11) ns V CC =V BS = 15V, I C =10A, V + =400V T FLIN Input Filter time (HIN, LIN) ns V IN =0 & V IN =5V T BLT-Trip I TRIP Blancking Time ns V IN =0 & V IN =5V D T Dead Time (V BS =V DD =15V) ns V BS =V CC =15V M T T ITrip T FLT-CLR Matching Propagation Delay Time (On & Off) I Trip to six switch to turn-off propagation delay (see fig. 2) Post I Trip to six switch to turn-off clear time (see fig. 2) ns V CC = V BS = 15V, external dead time> 400ns µs V CC =V BS = 15V, I C =10A, V + =400V T C = 25 C ms T C = 100 C 5

6 Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Units Conditions R th(j-c) Thermal resistance, per IGBT Flat, greased surface. Heatsink R th(j-c) Thermal resistance, per Diode C/W compound thermal conductivity R th(c-s) Thermal resistance, C-S W/mK C D Creepage Distance mm See outline Drawings Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter Min Typ Max Units Conditions R Shunt Resistance mω T C = 25 C T Coeff Temperature Coefficient ppm/ C P Shunt Power Dissipation W -40 C< T C <100 C T Range Temperature Range C Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max Units Conditions R 25 Resistance kω T C = 25 C R 125 Resistance kω T C = 125 C B B-constant (25-50 C) k [B(1/T2-1/T1)] R 2 = R 1 e Temperature Range C Typ. Dissipation constant 1 mw/ C T C = 25 C Input-Output Logic Level Table V + Hin1,2,3 (13,14,15) Lin1,2,3 (16,17,18) IC Driver Ho Lo U,V,W (2,5,8) HIN1,2,3 LIN1,2,3 U,V,W V X 1 X X X I TRIP 6

7 HIN1,2,3 LIN1,2, I BUS I BUS_trip 6µs 1µs 50% U,V,W t fltclr Sequence of events: 1-2) Current begins to rise 2) Current reaches I BUS_Trip level 2-3) Current is higher than I BUS_Trip for at least 6µs. This value is the worst-case condition with very low over-current. In case of high current (short circuit), the actual delay will be smaller. 3-4) Delay between driver identification of over-current condition and disabling of all outputs 4) Current starts decreasing, eventually reaching 0 5) Current goes below I BUS_trip, the driver starts its auto-reset sequence 6) Driver is automatically reset and normal operation can resume (over-current condition must be removed by the time the drivers automatically resets itself) Figure 2. I Trip Timing Waveform Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. 7

8 Module Pin-Out Description Pin Name Description 1 V B1 High Side Floating Supply Voltage 1 2 U, V S1 Output 1 - High Side Floating Supply Offset Voltage 3 NA none 4 V B2 High Side Floating Supply voltage 2 5 V,V S2 Output 2 - High Side Floating Supply Offset Voltage 6 NA none 7 V B3 High Side Floating Supply voltage 3 8 W,V S3 Output 3 - High Side Floating Supply Offset Voltage 9 NA none 10 V + Positive Bus Input Voltage 11 NA none 12 V- Negative Bus Input Voltage 13 H IN1 Logic Input High Side Gate Driver - Phase 1 14 H IN2 Logic Input High Side Gate Driver - Phase 2 15 H IN3 Logic Input High Side Gate Driver - Phase 3 16 L IN1 Logic Input Low Side Gate Driver - Phase 1 17 L IN2 Logic Input Low Side Gate Driver - Phase 2 18 L IN3 Logic Input Low Side Gate Driver - Phase 3 19 Fault/T MON Temperature Monitor and Fault Function 20 I TRIP Current Monitor 21 V CC +15V Main Supply 22 V SS Negative Main Supply

9 Typical Application Connection IRAMY20UP60B V + PGND CONTROLLER DC BUS CAPACITORS +5V Fault & Temp Monitor IMonitor 3-Phase AC MOTOR 12kohm U V W +5V BOOT-STRAP CAPACITORS VB1 CBS VSS 1 22 VS1 VB2 VS2 VB3 VS3 V + V - HIN1 HIN2 HIN3 LIN1 LIN2 LIN3 FLT-VTH ITRIP Vcc (15 V) IRAMY20UP60B Date Code Lot # +15V 0.1mF 10mF DGND 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between V CC -V SS and V B1,2,3 -V S1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the V CC. (see maximum ratings Table on page 3). 4. Current sense signal can be obtained from pin 20 and pin 22. Care should be taken to avoid having inverter current flowing through pin 22 to mantain required current measurement accuracy 5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 6. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 7. Fault/Temp Monitor pin must be pulled-up to +5V. 9

10 Maximum Output Phase RMS Current - A T 6 C = 100 C T C = 110 C 4 T C = 120 C T 2 J = 150 C Sinusoidal Modulation PWM Frequency - khz Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency V + =400V, T J =150 C, Modulation Depth=0.8, PF=0.6 Maximum Output Phase RMS Current - A T J = 150 C Sinusoidal Modulation = 20kHz = 16kHz = 12kHz Modulation Frequency - Hz Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency V + =400V, T J =150 C, T C =100 C, Modulation Depth=0.8, PF=

11 Total Power Losses - W I 60 OUT = 8 A RMS 50 I OUT = 10 A RMS 40 I 30 OUT = 12 A RMS T J = 150 C Sinusoidal Modulation PWM Switching Frequency - khz Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation V + =400V, T J =150 C, Modulation Depth=0.8, PF=0.6 Total Power Losses - W T 275 J = 150 C Sinusoidal Modulation = 12 khz 100 = 16 khz 75 = 20 khz Output Phase Current - A RMS Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation V BUS =400V, T J =150 C, Modulation Depth=0.8, PF=

12 Maximum Allowable Case Temperature - C = 12 khz = 16 khz 100 = 20 khz T J = 150 C Sinusoidal Modulation Output Phase Current - A RMS Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase IGBT Junction Temperature - C T J avg. = x T Therm Internal Thermistor Temperature Equivalent Read Out - C Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature 12

13 5.0 Thermistor Pin Read-Out Voltage - V T THERM R THERM T THERM R THERM T THERM R THERM C Ω C Ω C Ω Min Avg. Max Thermistor Temperature - C V Therm +5V R EXT R Therm Figure 9. Thermistor Readout vs. Temperature (12kohm pull-up resistor, 5V) and Nominal Thermistor Resistance values vs. Temperature Table. Recommended Bootstrap Capacitor - µf µF 10µF 6.8µF 4.7µF +15V D R BS C BS BS v B RG1 V CC H O H IN L IN V SS H IN L IN V SS COM PWM Frequency - khz V S L O R G2 3.3µF V + U,V,W GND Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency 13

14 Figure 11. Switching Parameter Definitions V CE I C I C V CE 50% H IN /L IN 90% I C 50% V CE 50% H IN /L IN H IN /L IN 90% I C H IN /L IN 50% V CE 10% I C 10% I C t r t f T ON Figure 11a. Input to Output Propagation turn-on Delay Time T OFF Figure 11b. Input to Output Propagation turn-off Delay Time I F V CE H IN /L IN I rr t rr Figure 11c. Diode Reverse Recovery 14

15 V + 5V Ho IN Hin1,2,3 IC Driver U,V,W Lin1,2,3 Lo IO Figure CT1. Switching Loss Circuit V + Hin1,2,3 Ho IN V CC 1k 10k Lin1,2,3 IC Driver U,V,W 5VZD IN Lo IO I o Figure CT2. S.C.SOA Circuit V + V CC 1k Hin1,2,3 10k IC Driver Ho U,V,W IN 5VZD Lin1,2,3 Lo IO IN I o Figure CT3. R.B.SOA Circuit 15

16 Package Outline A B Ø4.6 TYP REF. C 2 TYP Ø0.20 M A B TYP. 21x2.54 = TYP TYP INT. SCALE:4/1 2.8 INT REF 6 R0.6 TYP CONVEX ONLY 0.15 C DO NOT SCALE DRAWING. REMOVE ALL BURRS AND SHARP EDGES Standard Pin leadforming option For mounting instruction see AN-1049 Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Convex only 0.15mm typical 5- Tollerances ±0.5mm, unless otherwise stated Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) TAC Fax: (310) Visit us at for sales contact information 07/