RU6099R. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings TO-220

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1 N-Channel Advanced Power MOSFET Features 60V/120A, RDS (ON) =6mΩ Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested TO C Operating Temperature Lead Free and Green Available Applications Switching Application Systems Inverter Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T A=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 60 V GSS Gate-Source Voltage ±25 T J Maximum Junction Temperature 175 C T STG Storage Temperature Range -55 to 175 C I S Diode Continuous Forward Current T C =25 C A Mounted on Large Heat Sink I DP 300μs Pulse Drain Current Tested T C =25 C A T C =25 C I D Continuous Drain Current T C =100 C 90 1 A P D Maximum Power Dissipation T C =25 C 150 T C =100 C 75 W R θjc Thermal Resistance-Junction to Case 1 C/W Drain-Source Avalanche Ratings E AS 3 Avalanche Energy, Single Pulsed 625 mj V

2 Electrical Characteristics (T A =25 C Unless Otherwise Noted) Symbol Parameter Test Condition RU6099R Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250µA 60 V I DSS Zero Gate Voltage Drain Current V DS = 60V, V GS =0V 1 T J =85 C 30 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =250µA V I GSS Gate Leakage Current V GS =±20V, V DS =0V ±100 na R DS(ON) 4 Drain-Source On-state Resistance V GS = 10V, I DS =40A 6 7 mω Diode Characteristics V SD 4 Diode Forward Voltage ISD =40A, V GS =0V 1.2 V trr Reverse Recovery Time ISD=40A, dlsd/dt=100a/µs 50 ns Qrr Reverse Recovery Charge 95 nc Dynamic Characteristics 5 R G Gate Resistance V GS =0V,V DS =0V,F=1MHz 1.3 Ω C iss Input Capacitance VGS=0V, 3000 C oss Output Capacitance VDS= 30V, 430 pf C rss Reverse Transfer Capacitance Frequency=1.0MHz 240 t d(on) Turn-on Delay Time 14 t r Turn-on Rise Time VDD=30V, RL=30Ω, 17 IDS= 1A, VGEN= 10V, t d(off) Turn-off Delay Time RG=8Ω 40 ns t f Turn-off Fall Time 62 Gate Charge Characteristics 5 Q g Total Gate Charge 72 Q gs Gate-Source Charge VDS=30V, VGS= 10V, IDS=40A 13 Q gd Gate-Drain Charge 24 µa nc Notes: 1Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 2Pulse width limited by safe operating area. 3Limited by T Jmax, I AS =27A, V DD =48V, R G = 50Ω, Starting T J = 25 C. 4Pulse test ; Pulse width 300µs, duty cycle 2%. 5Guaranteed by design, not subject to production testing. 2

3 Typical Characteristics Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) T j - Junction Temperature ( C) T j - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient V DS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 3

4 Typical Characteristics Output Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mω) V DS - Drain-Source Voltage (V) I D - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mω) Normalized Threshold Voltage V GS - Gate-Source Voltage (V) T j - Junction Temperature ( C) 4

5 Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance IS - Source Current (A) T j - Junction Temperature ( C) V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) VGS - Gate-Source Voltage (V) V DS - Drain-Source Voltage (V) 5 Q G - Gate Charge (nc)

6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms 6

7 Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU6099R RU6099R TO-220 Tube

8 Package Information TO-220FB-3L SYMBOL MM INCH MM INCH SYMBOL MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX A Øp A e 2.54BSC 0.1BSC A e1 5.08BSC 0.2BSC b H b L C L D L2 2.50REF REF. D Øp DEP Q E θ E θ E ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS 8

9 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) FAX: (86-755)

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