Obsolete Product(s) - Obsolete Product(s)

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1 BUL312FP HIGH OLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH OLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 o C LARGE RBSOA FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS HORIZONTAL DEFLECTION FOR T SMPS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The BUL312FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. ABSOLUTE MAXIMUM RATINGS TO-220FP INTERNAL SCHEMATIC DIAGRAM Symbol Parameter alue Unit CES Collector-Emitter oltage (BE = 0) 1150 CEO Collector-Emitter oltage (IB = 0) 500 EBO Emitter-Base oltage (IC = 0) 9 I C Collector Current 5 A I CM Collector Peak Current (t p <5 ms) 10 A I B Base Current 3 A IBM Base Peak Current (tp <5 ms) 4 A Ptot Total Dissipation at Tc = 25 o C 36 W isol Insulation Withstand oltage (RMS) from All 1500 Three Leads to External Heatsink T stg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C March /6

2 THERMAL DATA R thj-case Rthj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o C/W o C/W ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES ICEO CEO(sus) EBO CE(sat) BE(sat) Collector Cut-off Current ( BE = 0) Collector Cut-off Current (I B = 0) Collector-Emitter Sustaining oltage (IB = 0) Emitter-Base oltage (I C = 0) Collector-Emitter Saturation oltage CE = 1150 CE = 1150 T j = 125 o C 1 2 ma ma CE = µa IC = 100 ma L= 25 mh 500 IE = 10 ma 10 I C = 1 A I C = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A IB = 0.6 A Base-Emitter I C = 1 A I B = 0.2 A Saturation oltage I C = 2 A I B = 0.4 A I C = 3 A I B = 0.6 A h FE DC Current Gain I C = 10 ma CE = 5 IC = 3 A CE = 2.5 INDUCTIE LOAD I C = 2 A I B1 = 0.4 A t s Storage Time BE(off) = -5 R BB = 0 Ω t f Fall Time CL = 250 L = 200 µh (see fig. 1) INDUCTIE LOAD I C = 2 A I B1 = 0.4 A t s Storage Time BE(off) = -5 R BB = 0 Ω t f Fall Time CL = 250 L = 200 µh T j = 125 o C (see fig. 1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas Derating Curve µs ns µs ns 2/6

3 DC Current Gain DC Current Gain Collector Emitter Saturation oltage Inductive Fall Time Base Emitter Saturation oltage Inductive Storage Time 3/6

4 Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6

5 TO-220FP MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E A F F F G G H L L L L L Ø B L6 L7 L3 D F1 E H G F G1 L2 F2 L /6

6 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 6/6

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