Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

Transcription

1 SCOPE: +5V/Programmable Low-Dropout Regulator Device Type Generic Number 0 MAX667M(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-835 and as follows: Outline Letter Mil-Std-835 Case Outline Package Code MAXIM SMD JA P GDIP-T8 or CDIP2-T8 8 LEAD CERDIP J8 Absolute Maximum Ratings Input Supply...+8V Output Short Circuit to GND... sec LBO Output Sink... 50mA LBO Output... GND to V OUT SHDN Input V to (V IN +0.3)V Input s LBI, SET V to (V IN -.0)V Lead Temperature (soldering, 0 seconds) C Storage Temperature C to +50 C Continuous Power Dissipation...T A =+70 C 8 lead CERDIP(derate 8.0mW/ C above +70 C) mW Junction Temperature T J C Thermal Resistance, Junction to Case, ΘJC: C/W Thermal Resistance, Junction to Ambient, ΘJA: C/W Recommended Operating Conditions. Ambient Operating Range (T A ) C to +25 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Electrical Characteristics of MAX667M/883B Rev. B for /883B and SMD Page 2 of 6

2 TABLE ELECTRICAL TESTS PARAMETER Symbol CONDITIONS -55 C <=T A <= +25 C GND=0V, V IN =+9V, V OUT =+5V Unless otherwise specified Group A Subgroup Device type Limits Min Limits Max Input V IN, V Output V OUT V SET =0V, V IN =6V, I OUT =0mA, V I OUT V IN =6V, 4.5V<V OUT <5.5V, ma Maximum Output V SHDN =2V 0 2 Units Quiescent I Q V SHDN =0V, V SET =0V, I OUT =0µA V SHDN =0V, V SET =0V, I OUT =00µA µa V SHDN =0V, V SET =0V, I OUT =200µA I OUT =00µA 0 60 Dropout 75 NOTE mv I OUT =200µA Load Regulation 0mA I OUT 200mA 0 00 mv 250 Line Regulation NOTE 2 6.0V V IN 0V, I OUT =0mA mv Set Reference V SET, V Set Input Leakage I SET V SET =.5V 0 ±0 na ±000 Output Leakage I OUT V SHDN =2V, 0 µa Short-Circuit I OUT NOTE ma Detector Reference V LBI, V Detector Input Leakage Detector Ouput Shutdown Threshold Shutdown Input Leakage Dropout Detector Output I LBI V LBI =.5V V LBO V IN =9V, V LBI =2V, I LBO =0mA ±0 ± V SHDN, 0.5 V I SHDN V SHDN = 0 to V IN V DD V SET =0V, V SHDN =0V, R DD =00kΩ, V IN =7V, I OUT =0mA V SET =0V, V SHDN =0V, R DD =00kΩ, V IN =4.5V, I OUT =0mA, 0 0 ±0 ± ma na V na V Electrical Characteristics of MAX667M/883B Rev. B for /883B and SMD Page 3 of 6

3 NOTE : Dropout voltage is V IN -V OUT when V OUT falls to 0.V below its value at V IN =V OUT +2V. NOTE 2: Line Regulation Limit =.05%/V for Subgroup and.075 %/V for Subgroup. NOTE 3: Short-Circuit is pulsed tested to maintain junction temperature. Short-circuit duration is limited by package dissipation. ORDERING INFORMATION. SMD PKG.Code 0 MAX667MJA/883B MPA J08 DD 8 IN OUT 2 7 LBO LBI 3 6 SET GND 4 5 SHDN TERMINAL NUMBER FUNCTION Dropout Detector Output - the collector of a PNP pass transistor. Normally an open circuit, it sources current as dropout is reached. 2 Regulated Output. OUT falls to 0V when SHDN is above.5v. SET determines output voltage when SET is above 50mV; otherwise it is 5V. OUT must be connected to an output filter capacitor. 3 Detector. A CMOS input to an internal.255v comparator whose output is the LBO pin. MAX 667 MJA DD OUT LBI 4 Ground. GND 5 Shutdown Input. Connected to GND for normal operation (output active). Pull above.5v to disable OUT, LBO, and DD and to reduce quiescent current to <µa. SHDN 6 (Output) Set, CMOS Input. Connect to GND for 5V output. For other voltages, connect external resistive divider from OUT. 7 Output. An open-drain N-channel transistor that sinks current to GND when LBI is less than.22v. 8 Positive Input (unregulated) IN SET LBO Electrical Characteristics of MAX667M/883B Rev. B for /883B and SMD Page 4 of 6

4 QUALITY ASSURANCE Sampling and inspection procedures shall be in accordance with MIL-Prf-38535, Appendix A as specified in Mil-Std-883. Screening shall be in accordance with Method 5004 of Mil-Std-883. Burn-in test Method 05:. Test Condition, A, B, C, or D. 2. TA = +25 C minimum. 3. Interim and final electrical test requirements shall be specified in Table 2. Quality conformance inspection shall be in accordance with of Mil-Std-883, including Groups A, B, C, and D inspection. Group A inspection:. Tests as specified in Table Selected subgroups in Table, of Mil-Std-883 shall be omitted. Group C and D inspections: a. End-point electrical parameters shall be specified in Table. b. Steady-state life test, Method 005 of Mil-Std-883:. Test condition A, B, C, D. 2. TA = +25 C, minimum. 3. Test duration, 000 hours, except as permitted by Method 005 of Mil-Std-883. TABLE 2. ELECTRICAL TEST REQUIREMENTS Mil-Std-883 Test Requirements Interim Electric Parameters Method 5004 Final Electrical Parameters Group A Test Requirements Group C and D End-Point Electrical Parameters Subgroups per, Table *, 2, 3, 2, 3 * PDA applies to Subgroup only Electrical Characteristics of MAX667M/883B Rev. B for /883B and SMD Page 5 of 6

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