MOC211M, MOC212M, MOC213M Small Ouline Optocouplers Transistor Output

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1 MOC2M, MOC22M, MOC23M Small Ouline Optocouplers Transistor Output Features UL Recognized (File #E90700, Volume 2) VDE Recognized (File #3666) (add option V for VDE approval, e.g., MOC2VM) Convenient Plastic SOIC-8 Surface Mountable Package Style Standard SOIC-8 Footprint, with 0.050" Lead Spacing High Input-Output Isolation of 2500 V AC(rms) Guaranteed Minimum BV CEO of 30V Guaranteed Applications General Purpose Switching Circuits Interfacing and Coupling Systems of Different Potentials and Impedances Regulation Feedback Circuits Monitor and Detection Circuits Schematic ANODE 8 N/C Description April 203 These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for throughthe-board mounting. Package Outline CATHODE 2 7 BASE Figure 2. Package Outline N/C 3 6 COLLECTOR N/C 4 5 EMITTER Figure. Schematic MOC2M, MOC22M, MOC23M Rev..2

2 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. T A = 25 C unless otherwise specified. Emitter Symbol Rating Value Unit Detector I F Forward Current Continuous 60 ma I F (pk) Forward Current Peak (PW = 00 µs, 20 pps) A V R Reverse Voltage 6.0 V P D LED Power T A = 25 C Derate above 25 C Notes:. Isolation Surge Voltage, V ISO, is an internal device dielectric breakdown rating. 2. For this test, Pins and 2 are common and Pins 5, 6 and 7 are common. 3. V ISO rating of 2500 V AC(rms) for t = minute is equivalent to a rating of 3,000 V AC(rms) for t = second mw mw/ C V CEO Collector-Emitter Voltage 30 V V ECO Emitter-Collector Voltage 7.0 V V CBO Collector-Base Voltage 70 V I C Collector Current-Continuous 50 ma Total Device P D Detector Power T A = 25 C Derate above 25 C V ISO mw mw/ C Input-Output Isolation Voltage 2500 Vac(rms) (f = 60 Hz, t = minute) ()(2)(3) P D Total Device Power T A = 25 C Derate above 25 C mw mw/ C T A Ambient Operating Temperature Range -40 to +00 C T stg Storage Temperature Range -40 to +50 C T L Lead Soldering Temperature (/6" from case, 0 second duration) 260 C MOC2M, MOC22M, MOC23M Rev..2 2

3 Electrical Characteristics T A = 25 C unless otherwise specified. Symbol Parameter Test Conditions Min. Typ.* Max. Unit Emitter V F Input Forward Voltage I F = 0 ma.5.5 V I R Reverse Leakage Current V R = 6.0 V µa C IN Input Capacitance 8 pf Detector I CEO I CEO2 Collector-Emitter Dark Current V CE = 0 V, T A = 25 C V CE = 0 V, T A = 00 C 50 na µa BV CEO Collector-Emitter Breakdown I C = 00 µa V Voltage BV ECO Emitter-Collector Breakdown I E = 00 µa V Voltage C CE Collector-Emitter Capacitance f = MHz, V CE = pf Coupled CTR Collector-Output Current (4) I F = 0 ma, V CE = 0 V MOC2M MOC22M MOC23M % V ISO Isolation Surge Voltage ()(2)(3) f = 60 Hz AC Peak, t = minute 2500 Vac(rms) R ISO Isolation Resistance (2) V = 500 V 0 Ω V CE (sat) Collector-Emitter Saturation Voltage I C = 2.0 ma, I F = 0 ma 0.4 V C ISO Isolation Capacitance (2) V = 0 V, f = MHz 0.2 pf t on Turn-On Time I C = 2.0 ma, V CC = 0 V, R L = 00 Ω 7.5 µs (Fig. 2) t off Turn-Off Time I C = 2.0 ma, V CC = 0 V, R L = 00 Ω 5.7 µs (Fig. 2) t r Rise Time I C = 2.0 ma, V CC = 0 V, R L = 00 Ω 3.2 µs (Fig. 2) t f Fall Time I C = 2.0 ma, V CC = 0 V, R L = 00 Ω (Fig. 2) 4.7 µs *Typical values at T A = 25 C Notes:. Isolation Surge Voltage, V ISO, is an internal device dielectric breakdown rating. 2. For this test, Pins and 2 are common and Pins 5, 6 and 7 are common. 3. V ISO rating of 2500 V AC(rms) for t = minute is equivalent to a rating of 3,000 V AC(rms) for t = second. 4. Current Transfer Ratio (CTR) = I C / I F x 00 %. MOC2M, MOC22M, MOC23M Rev..2 3

4 Typical Performance Curves I CEO COLLECTOR -EMITTER DARK CURRENT (na) VF FORWARD VOLTAGE (V) I C OUTPUT COLLECTOR CURRENT (NORMALIZED) VCE = 0 V T A = 55 C T A = 25 C T A = 00 C 0 00 I F LED FORWARD CURRENT (ma) Figure 3. LED Forward Voltage vs. Forward Current 0 NORMALIZED TO TA = 25 C T A AMBIENT TEMPERATURE ( C) Figure 5. Output Current vs. Ambient Temperature T A AMBIENT TEMPERATURE ( C) I C OUTPUT COLLECTOR CURRENT (NORMALIZED) I C OUTPUT COLLECTOR CURRENT (NORMALIZED) NORMALIZED CTR 0 0. V CE = 5 V NORMALIZED TO I F = 0 ma I F LED INPUT CURRENT (ma) Figure 4. Output Curent vs. Input Current 0.2 I F = 0 ma NORMALIZED TO VCE = 5 V V CE COLLECTOR-EMITTER VOLTAGE (V) Figure 6. Output Current vs. Collector-Emitter Voltage I F = 20 ma R BE BASE RESISTANCE (kω) I F = 0 ma I F = 5 ma V CE = 5 V, T A = 25 C Normalized to: CTR at R BE = Open Figure 7. Dark Current vs. Ambient Temperature Figure 8. CTR vs. RBE (Unsaturated) MOC2M, MOC22M, MOC23M Rev..2 4

5 Typical Performance Curves (Continued) NORMALIZED CTR I F = 20 ma I F = 0 ma I F = 5 ma 0. V CE = 0.3 V, T A = 25 C Normalized to: 0.0 CTR at R BE = Open R BE BASE RESISTANCE (kω) R BE Figure 9. CTR vs. RBE (Saturated) NORMALIZED t off V CC = 0 V I C = 2 ma R L = 00 Ω NORMALIZED TO : t off AT R BE = OPEN ALIZED t on NORM R BE BASE RESISTANCE (MΩ) Figure. Normalized toff vs. RBE V CC = 0 V I C = 2 ma R L = 00 Ω NORMALIZED TO: t on AT R BE = OPEN BASE RESISTANCE (MΩ) Figure 0. Normalized ton vs. RBE TEST CIRCUIT WAVEFORMS V CC = 0 V INPUT PULSE I F I C R L INPUT R BE OUTPUT 0% 90% t r t f OUTPUT PULSE Adjust I F to produce IC = 2 ma t on t off Figure 2. Switching Time Test Circuit and Waveforms MOC2M, MOC22M, MOC23M Rev..2 5

6 Package Dimensions 8-pin SOIC Surface Mount SEATING PLANE 0.43 (3.63) 0.23 (3.3) Recommended Pad Layout 0.02 (0.53) 0.0 (0.28) (.27) Typ (5.3) 0.82 (4.63) Lead Coplanarity: (0.0) MAX (6.99) (3.94) 0.64 (4.6) 0.44 (3.66) (0.20) (0.08) (0.6) (.52) (6.9) (5.69) 0.00 (0.25) (0.6) (.27) Dimensions in inches (mm). Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: MOC2M, MOC22M, MOC23M Rev..2 6

7 Ordering Information Option Order Entry Identifier Description V V VDE 0884 R2 R2 Tape and Reel (2500 units per reel) R2V R2V VDE 0884, Tape and Reel (2500 units per reel) Marking Information Definitions V X YY Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option See order entry table) 4 One digit year code, e.g., 8 5 Two digit work week ranging from 0 to 53 6 Assembly package code S 2 6 MOC2M, MOC22M, MOC23M Rev..2 7

8 Carrier Tape Specifications 8.0 ± ± ± MAX 4.0 ± ± MAX 6.40 ± 0.20 User Direction of Feed Dimensions in mm Ø.5 MIN.75 ± ± ± ± 0.20 Ø.5 ± 0. MOC2M, MOC22M, MOC23M Rev..2 8

9 Reflow Profile Temperature ( C) TP TL Tsmax Tsmin Max. Ramp-up Rate = 3 C/S Max. Ramp-down Rate = 6 C/S Preheat Area Profile Freature Time 25 C to Peak Time (seconds) Pb-Free Assembly Profile Temperature Minimum (Tsmin) 50 C Temperature Maximum (Tsmax) 200 C Time (t S ) from (Tsmin to Tsmax) seconds Ramp-up Rate (t L to t P ) 3 C/second maximum Liquidous Temperature (T L ) 27 C Time (t L ) Maintained Above (T L ) seconds Peak Body Package Temperature 260 C +0 C / 5 C Time (t P ) within 5 C of 260 C 30 seconds Ramp-down Rate (T P to T L ) 6 C/second maximum Time 25 C to Peak Temperature 8 minutes maximum ts tl tp MOC2M, MOC22M, MOC23M Rev..2 9

10 2005 Fairchild Semiconductor Corporation MOC2M, MOC22M, MOC23M Rev..2 0

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