LM124/224/324/324A/ SA534/LM2902 Low power quad op amps INTEGRATED CIRCUITS

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1 INTEGRATED CIRCUITS Supersedes data of 21 Aug 3 File under Integrated Circuits, IC11 Handbook 22 Jan 22

2 DESCRIPTION The LM12/ series consists of four independent, high-gain, internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. PIN CONFIGURATION D, DH, and N Packages OUTPUT OUTPUT UNIQUE FEATURES In the linear mode, the input common-mode voltage range includes ground and the output voltage can also swing to ground, even though operated from only a single power supply voltage. INPUT 1 INPUT 1 V INPUT INPUT GND The unity gain crossover frequency and the input bias current are temperature-compensated. INPUT 2 INPUT INPUT 3 INPUT 3 FEATURES Internally frequency-compensated for unity gain Large DC voltage gain: 1 db Wide bandwidth (unity gain): 1 MHz (temperature-compensated) Wide power supply range Single supply: 3 V DC to 3 V DC or dual supplies: ±1.5 V DC to ±15 V DC Very low supply current drain: essentially independent of supply voltage (1 mw/op amp at 5 V DC ) Low input biasing current: 5 na DC (temperature-compensated) Low input offset voltage: 2 mv DC and offset current: 5 na DC Differential input voltage range equal to the power supply voltage Large output voltage: V DC to V CC 1.5 V DC swing OUTPUT OUTPUT 3 TOP VIEW SL65 Figure 1. Pin configuration. ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 1-Pin Plastic Dual In-Line Package (DIP) 55 C to 125 C LM12N SOT Pin Plastic Small Outline (SO) Package 25 C to 85 C LM22D SOT Pin Plastic Dual In-Line Package (DIP) 25 C to 85 C LM22N SOT Pin Plastic Small Outline (SO) Package C to 7 C LM32D SOT Pin Plastic Thin Shrink Small Outline Package (TSSOP) C to 7 C LM32DH SOT2-1 1-Pin Plastic Dual In-Line Package (DIP) C to 7 C LM32N SOT Pin Plastic Small Outline (SO) Package C to 7 C LM32AD SOT Pin Plastic Dual In-Line Package (DIP) C to 7 C LM32AN SOT Pin Plastic Small Outline (SO) Package C to 85 C SA53D SOT Pin Plastic Dual In-Line Package (DIP) C to 85 C SA53N SOT Pin Plastic Small Outline (SO) Package C to 125 C LM292D SOT Pin Plastic Dual In-Line Package (DIP) C to 125 C LM292N SOT Jan

3 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT V CC Supply voltage 32 or ±16 V DC V IN Differential input voltage 32 V DC V IN Input voltage.3 to 32 V DC P D Maximum power dissipation, T amb = 25 C (still-air) 1 N package 12 mw D package 1 mw DH package 762 mw Output short-circuit to GND one amplifier 2 V CC < 15 V DC and T amb = 25 C Continuous I IN Input current (V IN <.3 V) 3 5 ma T amb Operating ambient temperature range LM32/32A to 7 C LM22 25 to 85 C SA53 to 85 C LM292 to 125 C LM12 55 to 125 C T stg Storage temperature range 65 to 15 C T sld Lead soldering temperature (1 sec max) 23 C NOTES: 1. Derate above 25 C at the following rates: N package at 11. mw/ C D package at 8.3 mw/ C DH package at 6.1mW/ C 2. Short-circuits from the output to V CC can cause excessive heating and eventual destruction. The maximum output current is approximately ma, independent of the magnitude of V CC. At values of supply voltage in excess of 15 V DC continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. 3. This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input bias clamps. In addition, there is also lateral NPN parasitic transistor action on the IC chip. This action can cause the output voltages of the op amps to go to the V rail (or to ground for a large overdrive) during the time that the input is driven negative. 22 Jan 22 3

4 DC ELECTRICAL CHARACTERISTICS V CC = 5 V; T amb = 25 C, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS LM12/LM22 LM32/ Min Typ Max Min Typ Max R S = Ω ±2 ±5 ±2 ±7 V OS Offset voltage 1 R S = Ω, over temp. ±7 ±9 UNIT mv V OS / T Temperature drift R S = Ω, over temp. 7 7 µv/ C I IN () or I IN () I BIAS Input current 2 I IN () or I IN (), over temp. 3 5 I BIAS / T Temperature drift Over temp. 5 5 pa/ C I OS Offset current I IN ()I IN () ±3 ±3 ±5 ±5 I IN ()I IN (), over temp. ±1 ±15 I OS / T Temperature drift Over temp. 1 1 pa/ C Common-mode voltage V CC 3 V V CC 1.5 V CC 1.5 V CM range 3 V CC 3 V; over temp. V CC 2 V CC 2 CMRR Common-mode rejection ratio V CC = 3 V db V OUT Output voltage swing R L = 2 kω, V CC = 3 V, over temp V V OH Output voltage high R L 1 kω, V CC = 3 V, over temp V V OL Output voltage low R L 1 kω; over temp mv I CC A VOL Supply current Large-signal voltage gain R L =, V CC = 3 V; over temp R L = ; over temp V CC = 15 V (for large V O swing); R L 2 kω V CC = 15 V (for large V O swing); R L 2k Ω; over temp. f = 1 khz to 2 khz, input referred Amplifier-to-amplifier coupling db PSRR Power supply rejection ratio R S Ω db Output current source V IN = 1 V, V IN = V, V CC = 15 V V IN = 1 V, V IN = V, V CC = 15 V, over temp. V I IN = 1 V, V IN = V, OUT V CC = 15 V V Output current sink IN = 1 V, V IN = V, V CC = 15 V, over temp. V IN = 1 V, V IN = V, V O = 2 mv na na V ma V/mV ma µa I SC Short-circuit current ma GBW Unity gain bandwidth 1 1 MHz SR Slew rate.3.3 V/µs V NOISE Input noise voltage f = 1 khz nv/ Hz V DIFF Differential input voltage 3 V CC V CC V 22 Jan 22

5 DC ELECTRICAL CHARACTERISTICS (Continued) V CC = 5 V, T amb = 25 C unless otherwise specified. LM32A SYMBOL PARAMETER TEST CONDITIONS Min Typ Max R S = Ω ±2 ±3 V OS Offset voltage 1 R S = Ω, over temp. ±5 UNIT mv V OS / T Temperature drift R S = Ω, over temp. 7 3 µv/ C I IN () or I IN () 5 1 I BIAS Input current 2 I IN () or I IN (), over temp. 2 na I BIAS / T Temperature drift Over temp. 5 pa/ C I OS Offset current I IN ()I IN () ±5 ±3 I IN ()I IN (), over temp. ±75 I OS / T Temperature drift Over temp. 1 3 pa/ C mode V CC 3 V V CC 1.5 V V CM Common-mode voltage range 3 V CC 3 V, over temp. V CC 2 V CMRR Common-mode rejection ratio V CC = 3 V db V OUT Output voltage swing R L = 2 kω, V CC = 3 V; over temp. 26 V V OH Output voltage high R L 1 kω, V CC = 3 V; over temp V V OL I CC Output voltage low Supply current R L 1 kω, over temp. 5 2 mv R L =, V CC = 3 V, over temp ma R L =, over temp ma V CC = 15 V (for large V O swing), R L 2 kω 25 1 V/mV A VOL Large-signal voltage gain V CC = 15 V (for large V O swing), R L 2k Ω, over temp. 15 V/mV Amplifier-to-amplifier coupling 5 f = 1 khz to 2 khz, input referred 12 db PSRR Power supply rejection ratio R S Ω 65 1 db V IN = 1 V, V IN = V, V CC = 15 V 2 ma Output current source V IN = 1 V, V IN = V, V CC = 15 V, over temp. 1 2 ma I OUT V IN = 1 V, V IN = V, V CC = 15 V 1 2 ma Output current sink V IN = 1 V, V IN = V, V CC = 15 V, over temp. 5 8 ma V IN = 1 V, V IN = V, V O = 2 mv 12 5 µa I SC Short-circuit current 1 6 ma V DIFF Differential input voltage 3 V CC V GBW Unity gain bandwidth 1 MHz SR Slew rate.3 V/µs V NOISE Input noise voltage f = 1 khz nv/ Hz NOTES: 1. V O 1. V DC, R S = Ω with V CC from 5 V to 3 V and over full input common-mode range ( V DC to V CC 1.5 V). 2. The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output so no loading change exists on the input lines. 3. The input common-mode voltage or either input signal voltage should not be allowed to go negative by more than.3 V. The upper end of the common-mode voltage range is V CC 1.5, but either or both inputs can go to 32 V without damage.. Short-circuits from the output to V CC can cause excessive heating and eventual destruction. The maximum output current is approximately ma independent of the magnitude of V CC. At values of supply voltage in excess of 15 V DC, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers. 5. Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts. This typically can be detected as this type of coupling increases at higher frequencies. na 22 Jan 22 5

6 EQUIVALENT CIRCUIT v 6 µ A 1µ A 6µ A Q5 Q6 C C Q7 Q2 Q3 R SC Q1 Q OUTPUT INPUTS Q11 Q13 Q1 Q12 5µA Q8 Q9 SL66 Figure 2. Equivalent circuit. 22 Jan 22 6

7 TYPICAL PERFORMANCE CHARACTERISTICS SUPPLY CURRENT DRAIN (madc) Supply Current T A = o C to 125 o C TA = -55 o C V OUTPUT VOLTAGE REFERENCE TO V (V DC ) Output Characteristics Current Sourcing V /2 V I O V 2 INDEPENDENT OF V T A = 25o C OUTPUT CURRENT (madc) Current Limiting SUPPLY VOLTAGE (V DC ) I O OUTPUT SOURCE CURRENT (ma DC ) TEMPERATURE ( o C) OP55S OP56S OP57S A VOL VOLTAGE GAIN (db) Voltage Gain R L 2 KΩ R L 2 KΩ SUPPLY VOLTAGE (V DC ) OP58S V O OUTPUT VOLTAGE (V DC ) Output Characteristics Current Sinking V = 5 V DC V = 15 V DC V = 3 V DC V /2 V V O.1 T A = 25o C I O OUTPUT SINK CURRENT (ma DC ) OP59S Figure 3. Typical Performance Characteristics I O VOLTAGE GAIN (db) OpenLoop Frequency Response V IN.1µf V = 1 to 15 V DC AND 2 55 o C < TA < 125 o C V V /2 1M V O V = 3 V DC AND 55 o C < TA < 125 o C K 1K 1K 1M 1M FREQUENCY (Hz) OP55S SL67 22 Jan 22 7

8 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) V O OUTPUT SWING (Vpp) Large-Scale Frequency Response V IN 1K 7V DC V DC 1K 2K V O 1K 1K 1K 1M OUTPUT VOLTAGE (V) INPOUT VOLTAGE (V) Voltage-Follower Pulse Response R L < 2K V = 15 V DC V IN INPUT VOLTAGE ( V DC ) Input Voltage Range NEGATIVE POSITIVE FREQUENCY (Hz) TIME (µs) POWER SUPPLY VOLTAGE ( V DC ) V OR V I B INPUT CURRENT (na DC) Input Current V CM = V DC V = 3 V DC 6 5 V = 15 V DC 3 2 V = 5 V DC T A TEMPERATURE (Co ) CMRR COMMONMODE REJECTION RATIO (db) Common-Mode Rejection Ratio V DC 6 1k 1 V IN 1 V O 2 1k 7.5 V DC 1 1k 1k 1k 1M f FREQUENCY (Hz) E O OUTPUT VOLTAGE (mv) Voltage-Follower Pulse Response (SmallSignal) V IN OUTPUT E O 5pF INPUT V = 3 25 V DC L TIME (µs) T A = 25o C SL68 Figure. Typical Performance Characteristics (cont.) TYPICAL APPLICATIONS RF V V V IN R IN V 2 V 8 RL V O V 2 1K V 1K V 8 8 IN V O IN 1k 1k BLOCKS DC. GAIN R 1 RF V O Single Supply Inverting Amplifier NonInverting Amplifier Input Biasing VoltageFollower SL69 Figure 5. Typical Applications 22 Jan 22 8

9 DIP1: plastic dual in-line package; 1 leads (3 mil) SOT Jan 22 9

10 SO1: plastic small outline package; 1 leads; body width 3.9 mm SOT Jan 22 1

11 TSSOP1: plastic thin shrink small outline package; 1 leads; body width. mm SOT Jan 22 11

12 Data sheet status Data sheet status [1] Product status [2] Definitions Objective data Preliminary data Development Qualification This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Production Definitions Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 613). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information please visit Fax: For sales offices addresses send to: This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-65A. [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL Koninklijke Philips Electronics N.V. 22 All rights reserved. Printed in U.S.A. Date of release: 1-2 Document order number: Jan 22 12

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