Reference Design RD-344
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1 Reference Design RD-344 Fairchild Motion-SPM FNA4160 Three-Shunt Design The following reference design supports a design of FNA4160. It should be used in conjunction with the FNA4160 datasheet as well as Fairchild s application notes (AN-9070, AN-9071, AN-9072) and technical support team. Please visit Fairchild s website at Application Fairchild Device Input Voltage Range Typical Power Rating Topology Home Appliance (Air-Conditioner) FNA4160 MMSZ22B LMV ~400V DC 100W Three Shunt Solution (Single Ground) Key Features FNA V-1A 3-phase IGBT inverter bridge including control ICs for gate driving and protection Easy PCB layout due to built-in bootstrap diode and independent VS pin Divided negative DC-link terminals for inverter current-sensing applications Single-grounded power supply due to built-in HVIC Built-in NTC thermistor for over-temperature monitoring Isolation rating of 2000V rms /min. MMSZ22B Silicon planar power Zener diodes, DO-41 glass case 24V/1.0W rating Zener diode For use in stabilizing and clipping circuits with high power rating Standard Zener voltage tolerance: ±% LMV324 General-purpose, low-voltage, rail-to-rail output amplifier 80µA supply current per channel 1.2MHz GBP(Gain Bandwidth Product) 1.V/µs slew rate Low offset voltage 2010 Fairchild Semiconductor Corporation 1 RD344_FNA4160 Rev
2 1. Schematics Figure 1. Block Diagram of Air Conditioner 2010 Fairchild Semiconductor Corporation 2 RD344_FNA4160 Rev
3 R Motion-SPM FNA4160 VTH (1) V line J1 (1) UH (2) VH (3) WH R R R C1 C 10uF/3V C7 10uF/3V C8 10uF/3V C16 C17 1V line C6 104 C C9 104 ZD1 MMSZ22B ZD2 MMSZ22B ZD3 MMSZ22B (26) VB(U) (2) VS(U) (24) VB(V) (23) VS(V) (22) VB(W) (21) VS(W) (20) IN(UH) (19) IN(VH) (18) V(WH) (17) VCC(H) (16) VCC(L) UVB UVS VVB OUT(UH) VVS UVS WVB WVS OUT(VH) IN(UH) VVS IN(VH) IN(WH) VCC OUT(WH) COM WVS NTC RTH (2) P (3) U (4) V () W (6) R9 6.8K 1% C14 0.1uF 630V P W V U (4) UL () VL (6) WL (7) FO (8) V NTC (9) V DD (10) V CC (11) GND J2 (1) V IU 1V line C31 100uF/16V V line C R R R C24 C18 R C26 220uF/3V C19 C20 R31 4.7K C V line ZD4 MMSZ22B C2 C (1) COM (14) IN(UL) (13) IN(VL) (12) IN(WL) (11) VFO (10) CSC R3 62 VCC OUT(UL) COM IN(WL) IN(VL) OUT(VL) IN(UL) VFO OUT(WL) CSC V line R6 39K 1% R1 R7 C3 R8 R1 C12 V R22 R29 C22 NU (7) NV (8) NW (9) R1, R7, R8, R1, R22, R29 : 78.7K 1% C3, C12, C22 : 101 R3 1.8K 1% 1.8K 1% C2 101 R2 1.0K 1% R4 1.0K 1% R W R32 R W W R W N (2) V IV C4 101 R14 39K 1% 7 6 R11 1.8K 1% R10 1.0K 1% R13 1.8K 1% R12 1.0K 1% C (3) V IW C R27 39K 1% R24 1.8K 1% R23 1.0K 1% R26 1.8K 1% R2 1.0K 1% C C R K 1% C R37 1.8K 1% R36 1.0K 1% R39 1.8K 1% R38 1.0K 1% C C R41 8.2K 1% U1 LMV324 Figure 2. Reference Design for 3-Phase Inverter 2010 Fairchild Semiconductor Corporation 3 RD344_FNA4160 Rev
4 2. Key Parameter Design 2.1. Selection of Bootstrap Capacitance (C BS ) The bootstrap capacitor can be calculated by: C BS I Leak Δt = ΔV BS where: Δt = maximum on pulse width of high-side IGBT; ΔV BS = the allowable discharge voltage of the C BS (voltage ripple); and I Leak = maximum discharge current of the C BS. Normally, I Leak consist of the following items: - Gate charge for turning the high-side IGBT on - Quiescent current to the high-side circuit in the HVIC - Level-shift charge required by level-shifters in HVIC - Leakage current in the bootstrap diode - C BS capacitor leakage current (ignored for non-electrolytic capacitors) - Bootstrap diode reverse recovery charge. Practically, 2mA of I Leak is recommended for μmini DIP SPM family in Motion-SPM products (I PBS (operating V BS supply current) value in datasheet). (1) Calculation Examples of CBS C I Leak = circuit current (I PBS ) = 2mA (recommended value) ΔV BS = discharged voltage = 0.1V (recommended value) Δt = maximum on pulsewidth of high-side IGBT = 2ms (depends on system) I Δt Leak 2mA 0.2ms 6 BS _ min = = = ΔVBS 0.1V More than 2~3times 8μF Standard nominal capacitance 10μF. (2) 2010 Fairchild Semiconductor Corporation 4 RD344_FNA4160 Rev
5 2.2. Design of Current-Sensing Circuit Figure 3. General Circuit for Current Sensing Figure 4. Typical Low-Side Current-Sensing Circuit FNA4160 has a divided negative DC-link terminal (N U, N V, N W ) for current sensing to simplify current-sensing circuit design. Figure 3and Figure 4 show the typical three-shunt current-sense circuit using the FNA4160 in Motion-SPM. The value of application circuit is calculated by the following equations. In Figure, the output voltage of op-amp (V OUT ) can be calculated by: V V out,min out,max = ( V = ( V Shunt,min Shunt,max R7 ) + ( V R + R ref R7 ) + ( V R + R ref R + R 6 R + R According to Equation 3, the voltage between shunt resistor (V Shunt ) can be calculated by: V V Shunt, max = [ Vout max Vref ] ( + R6 ) Shunt, min = [ Vout min Vref ] ( + R6 ) R R 7 6 R2 + R R R2 + R R ) ) (3) (4) () (6) 2010 Fairchild Semiconductor Corporation RD344_FNA4160 Rev
6 2.3. Calculation Examples for Current-Sensing Circuitry Calculation Conditions DUT: FNA4160 Op-Amp: LMV324 Resistance of shunt resistor: 8mΩ, ±1% tolerance, KOA SC trip current: 22.A (1. x I C (rated current)) Input voltage range of ADC of MCU: 0~+V Components value: refer to Figure and Figure 6 V CC, V ref=.0[v] Voltage gain=13.9 Bandwidth = 86[kHz] Figure. Application Circuit of Current Sensing (V CC=.0V, Voltage Gain=13.9) V CC, V ref=3.3v Voltage gain=9.2 Bandwidth = 130[kHz] Figure 6. Application Circuit of Current Sensing (V CC=3.3V, Voltage Gain=9.1) 2010 Fairchild Semiconductor Corporation 6 RD344_FNA4160 Rev
7 Figure 7. V ADC (Input Voltage of AD Converter of MCU) vs. V Shunt (Voltage of Shunt Resistor) in Current Feedback Circuitry (Figure, Figure 6) According to calculation conditions, Figure, and Equations and 6, the voltage between shunt resistor (V Shunt,min, V Shunt,max ) can be calculated by: R2 + R4 78.7kΩ 2.8kΩ VShunt, min = [ Vout min Vref ] = [0V V ] = V ( + R6 ) R7 78.7kΩ kΩ 39kΩ R2 + R4 78.7kΩ 2.8kΩ VShunt, max = [ Vout max Vref ] = [V V ] = V ( R + R ) R 78.7kΩ kΩ 39kΩ 6 7 According to Equation 3 and 4, the voltage of op-amp output can be calculated by: R7 39kΩ 78.7kΩ Vout, min = ( VShunt,min ) + ( Vref ) = ( 0.179V ) + (V ) = 0V R2 + R4 + R6 2.8kΩ 78.7kΩ kΩ R7 39kΩ 78.7kΩ Vout, max = ( VShunt,max ) + ( Vref ) = (0.179V ) + (V ) =. 0V R2 + R4 + R6 2.8kΩ 78.7kΩ kΩ For low control voltage systems, such as V CC =3.3V, the same consideration can be performed on the circuit shown in Figure 6. The circuit in Figure 6 has a same performance as the circuit in Figure. Figure 7 shows V Shunt vs. V ADC according to V CC variation (3.3V,.0V) and gain of op-amp Components Calculation Examples for SCP Calculation Conditions DUT: FNA4160 Op-Amp: LMV324 Resistance of shunt resistor: 8mΩ, ±1% tolerance, KOA SC trip current: 22.A (1. x I C (rated current), can be changed by designer) SC trip reference voltage: V SC(min) =0.4V, V SC(typ) =0.0V, V SC(max) =0.V Components value: refer to Figure Fairchild Semiconductor Corporation 7 RD344_FNA4160 Rev
8 R kΩ Vout = ( ) ( Vshunt+ Vshunt ) = ( ) = 0. 0V R + R 1.0kΩ + 1.8kΩ Figure 8. Application Circuit of SCP(Short-Circuit Current Protection) 2.. Power Rating of Shunt Resistor Calculation Example Calculation Conditions Vendor of shunt resistor: KOA (TLR3AW 8mΩ) Maximum load current of inverter (I rms ): 10A rms Shunt resistor value at T C =2 o C (R SHUNT ): 8.0mΩ Derating ratio of shunt resistor at T SHUNT =100 o C: 6% Safety margin: 20% Figure 9. Derating Curve of Shunt Resistor (KOA, TLA Series) P SHUNT (I 2 rms x R SHUNT x Margin) / Derating ratio)=(10 2 x 0.008x 1.2) / 0.6=1.48W (Therefore, the proper power rating of shunt resistor is over 2.0W) 2010 Fairchild Semiconductor Corporation 8 RD344_FNA4160 Rev
9 2.6. Temperature-Monitoring Circuit R-T Curve MIN TYP MAX Resistance[kΩ] Temperature T TH [ É] Figure 10. R-T Curve of NTC thermistor in μmini DIP SPM Package Figure 10 is R-T curve of the integrated NTC thermistor in μmini DIP SPM package. For R-T table of NTC thermistor, refer to application note μmini DIP SPM (AN-9070). V DD V TH NTC ADC Port R TH MCU Motion-SPM TM R TH Figure 11. Temperature-Sensing Circuit by NTC Thermistor Figure 11 is example of a temperature-sensing circuit by NTC thermistor. In this reference design, R TH is 6.8kΩ and Figure 12 is the V-T curve at R TH =6.8kΩ, V CC =3.3V, and V CC =.0V Fairchild Semiconductor Corporation 9 RD344_FNA4160 Rev
10 V-T Curve at V DD =.0, 3.3V, R TH =6.8kohm V OUT(min) V OUT(typ) Output Voltage of R TH [V] V OUT(max) V DD =.0V V DD =3.3V Temperature T Thermistor [ o C] Figure 12. V-T Curve of Temperature-Sensing Circuit in Reference Design 2010 Fairchild Semiconductor Corporation 10 RD344_FNA4160 Rev
11 2.7. Print Circuit Board(PCB) Layout Guidance Figure 13. PCB Layout Guidance 2010 Fairchild Semiconductor Corporation 11 RD344_FNA4160 Rev
12 3. Related Resources FNA4160 Smart Power Module Motion-SPM AN-9070 Smart Power Module Motion-SPM in μmini DIP SPM User Guide AN-9071 Smart Power Module Motion-SPM in μmini DIP SPM Thermal Performance Information AN-9072-Smart Power Module Motion-SPM in Mini DIP SPM Mounting Guidance Reference Design Disclaimer Fairchild Semiconductor Corporation ( Fairchild ) provides these reference design services as a benefit to our customers. Fairchild has made a good faith attempt to build for the specifications provided or needed by the customer. Fairchild provides this product as is and without recourse and MAKES NO WARRANTY, EXPRESSED, IMPLIED OR OTHERWISE, INCLUDING ANY WARRANTY OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Customer agrees to do its own testing of any Fairchild reference designs in order to ensure design meets the customer needs. Neither Fairchild nor Customer shall be liable for incidental or consequential damages, including but not limited to, the cost of labor, requalifications, rework charges, delay, lost profits, or loss of goodwill arising out of the sale, installation or use of any Fairchild product. Subject to the limitations herein, Fairchild will defend any suit or proceeding brought against Customer if it is based on a claim that any product furnished hereunder constitutes an infringement of any intellectual property rights. Fairchild must be notified promptly in writing and given full and complete authority, information and assistance (at Fairchild s expense) for defense of the suit. Fairchild will pay damages and costs therein awarded against Customer but shall not be responsible for any compromise made without its consent. In no event shall Fairchild s liability for all damages and costs (including the costs of the defense by Fairchild) exceed the contractual value of the products or services that are the subject of the lawsuit. In providing such defense, or in the event that such product is held to constitute infringement and the use of the product is enjoined, Fairchild, in its discretion, shall procure the right to continue using such product, or modify it so that it becomes noninfringing, or remove it and grant Customer a credit for the depreciated value thereof. Fairchild s indemnity does not extend to claims of infringement arising from Fairchild s compliance with Customer s design, specifications and/or instructions, or the use of any product in combination with other products or in connection with a manufacturing or other process. The foregoing remedy is exclusive and constitutes Fairchild s sole obligation for any claim of intellectual property infringement and Fairchild makes no warranty that products sold hereunder will not infringe any intellectual property rights. All solutions, designs, schematics, drawings, boards or other information provided by Fairchild to Customer are confidential and provided for Customer s own use. Customer may not share any Fairchild materials with other semiconductor suppliers Fairchild Semiconductor Corporation 12 RD344_FNA4160 Rev
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