STTH3R02. Ultrafast recovery diode. Features. Description DO-15 STTH3R02Q DO-201AD STTH3R02 SMC STTH3R02S. Table 1. Device summary

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1 STTH3R2 Ultrafast recovery diode Datasheet - production data K Table 1. Device summary I F(V) 3 V RRM 2 V T j (max) 175 C V F (typ).7 V K DO-21D STTH3R2 K DO-15 STTH3R2Q t rr (typ) 16 ns K SMC STTH3R2S Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature Description The STTH3R2 uses ST's new 2 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DO-21D, DO-15, and SMC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. pril 214 DocID12359 Rev 3 1/9 This is information on a product in full production.

2 Characteristics STTH3R2 1 Characteristics Table 2. bsolute ratings (limiting values at T j = 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 2 V I FRM Repetitive peak forward current t p = 5 µs, F = 5 khz 11 I F(RMS) Forward rms current I F(V) verage forward current, δ =.5 DO-21D / DO-15 7 SMC 7 DO-15 T lead = 5 C DO-21D T lead = 9 C SMC T c = 11 C 3 I FSM Surge non repetitive forward current t p = 1 ms Sinusoidal 75 T stg Storage temperature range -65 to C T j Maximum operating junction temperature 175 C T L Maximum lead temperature for soldering during 1 s at 4 mm from case 23 C Table 3. Thermal parameters Symbol Parameter Value Unit R th(j-l) Junction to lead Lead Length = 1 mm on infinite heatsink DO DO-21D 3 R th(j-c) Junction to case SMC 2 C/W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) Reverse leakage current T j = 25 C 3 V R = V RRM T j = 125 C 3 3 µ T j = 25 C I F = V F (2) Forward voltage drop T j = 25 C T j = 1 C I F = V T j = 15 C Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % To evaluate the conduction losses use the following equation: P =.68 x I F(V) +.4 I F 2 (RMS) 2/9 DocID12359 Rev 3

3 STTH3R2 Characteristics Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time I F = 1, di F /dt = -5 /µs, V R = 3 V, T j = 25 C I F = 1, di F /dt = -1 /µs, V R = 3 V, T j = 25 C ns I RM Reverse recovery current I F = 3, di F /dt = -2 /µs, V R = 16 V, T j = 125 C t fr Forward recovery time I F = 3, di F /dt = 1 /µs V FR = 1.1 x V Fmax, T j = 25 C 4 ns V FP Forward recovery voltage I F = 3, di F /dt = 1 /µs, T j = 25 C 1.9 V Figure 1. peak current versus duty cycle Figure 2. Forward voltage drop versus forward current (typical values) 1 I M () T 5 I FM () I M 8 d=tp/t δ=tp/t tp P = 1 W 4 2 δ P = 5 W P = 3 W T j =15 C 1 V FM(V) Figure 3. Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance junction to ambient versus pulse duration - DO-21D I FM () Zth(j-a)/R th(j-a) DO-21D L leads=1 mm Epoxy printed circuit board FR4, e CU= 35 µm 2 T j =15 C 1 V FM(V) Single pulse.1 t P(s). 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 DocID12359 Rev 3 3/9 9

4 Characteristics STTH3R2 Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration - DO Z th(j-a) /R th(j-a) (j-a) DO-15 L leads=1 mm Epoxy printed circuit board FR4, e CU = 35 µm.2 Single pulse.1 t P(s). 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration - SMC Z th(j-a) /R th(j-a) SMC S cu =1 cm² Single pulse Epoxy printed circuit board FR4, e CU = 35 µm t P(s) 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Figure 7. Junction capacitance versus reverse applied voltage (typical values) Figure 8. Reverse recovery charges versus di F /dt (typical values) 1 C(pF) F=1MHz V osc =3mV RMS Q RR (nc) I F =3 V R =16V T j =125 C 2 V R(V) di F/dt(/µs) Figure 9. Reverse recovery time versus di F /dt (typical values) Figure 1. Peak reverse recovery current versus di F /dt (typical values) t RR (ns) T j =125 C I F =3 V R =16V di F/dt(/µs) I RM () I F =3 V R =16V T j =125 C T 1 j =25 C di F/dt(/µs) /9 DocID12359 Rev 3

5 STTH3R2 Ordering information scheme Figure 11. Dynamic parameters versus junction temperature Figure 12. Thermal resistance junction to ambient versus copper surface under each lead Q RR ;I RM [T j ]/Q RR ;I RM [T j =125 C] I F =3 V R =16V R th(j-a) ( C/W) Epoxy printed circuit board FR4, e CU= 35 µm.8 I RM 6 DO Q RR 4 DO-21D T j( C) S Cu(cm²) Figure 13. Thermal resistance versus copper surface under each lead for SMC Figure 14. Thermal resistance versus lead length for DO-21D package 1 R th(j-a) ( C/W) Epoxy printed circuit board FR4, e CU = 35 µm SMC 1 9 R th ( C/W) DO-21D R th(j-a) R th(j-l) S CU (cm²) L leads(mm) Ordering information scheme Figure 15. Ordering information scheme STTH 3 R 2 XXX Ultrafast switching diode verage forward current 3 = 3 Model R Repetitive peak reverse voltage 2 = 2 V Package Blank = DO-21 in mmopack RL = DO-21 in Tape and reel Q = DO-15 in mmopack QRL = DO-15 in Tape and reel S= SMC in Tape and reel DocID12359 Rev 3 5/9 9

6 Package information STTH3R2 3 Package information Epoxy meets UL94, V Cooling method: by conduction (C) In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: ECOPCK is an ST trademark. Table 6. DO-21D dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. B Note 1 E E Note 1 B ØD ØC Note 2 B C D E Notes 1 - The lead diameter ø D is not controlled over zone E 2 - The minimum length which must stay straight between the right angles after bending is.59"(15mm) Table 7. DO-15 dimensions Dimensions C C Ref. Millimeters Inches D B Min. Max. Min. Max B C D /9 DocID12359 Rev 3

7 STTH3R2 Package information Table 8. SMC dimensions Ref. Millimeters Dimensions Inches E1 Min. Max. Min. Max D b E c E E C E2 L 2 b E D L Figure 16. SMC footprint (dimensions in mm) DocID12359 Rev 3 7/9 9

8 Ordering information STTH3R2 4 Ordering information Table 9. Ordering information Order code Marking Package Weight Base qty Delivery mode STTH3R2 STTH3R2 DO-21D 1.16 g 6 mmopack STTH3R2RL STTH3R2 DO-21D 1.16 g 19 Tape and reel STTH3R2Q STTH3R2 DO-15.4 g 1 mmopack STTH3R2QRL STTH3R2 DO-15.4 g 6 Tape and reel STTH3R2S 3R2S SMC.243 g 25 Tape and reel 5 Revision history Table 1. Document revision history Date Revision Changes 3-May-26 1 First issue. 1-Oct-26 2 dded SMC package. 17-pr Updated ECOPCK statement. Reformatted to current standards. 8/9 DocID12359 Rev 3

9 STTH3R2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS ND CONDITIONS OF SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE OF ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES OF MERCHNTBILITY, FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION), OR INFRINGEMENT OF NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. ST PRODUCTS RE NOT DESIGNED OR UTHORIZED FOR USE IN: () SFETY CRITICL PPLICTIONS SUCH S LIFE SUPPORTING, CTIVE IMPLNTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONL SFETY REQUIREMENTS; (B) ERONUTIC PPLICTIONS; (C) UTOMOTIVE PPLICTIONS OR ENVIRONMENTS, ND/OR (D) EROSPCE PPLICTIONS OR ENVIRONMENTS. WHERE ST PRODUCTS RE NOT DESIGNED FOR SUCH USE, THE PURCHSER SHLL USE PRODUCTS T PURCHSER S SOLE RISK, EVEN IF ST HS BEEN INFORMED IN WRITING OF SUCH USGE, UNLESS PRODUCT IS EXPRESSLY DESIGNTED BY ST S BEING INTENDED FOR UTOMOTIVE, UTOMOTIVE SFETY OR MEDICL INDUSTRY DOMINS CCORDING TO ST PRODUCT DESIGN SPECIFICTIONS. PRODUCTS FORMLLY ESCC, QML OR JN QULIFIED RE DEEMED SUITBLE FOR USE IN EROSPCE BY THE CORRESPONDING GOVERNMENTL GENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners. 214 STMicroelectronics - ll rights reserved STMicroelectronics group of companies ustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of merica DocID12359 Rev 3 9/9 9

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