FSB43004A Motion SPM 45 LV Series

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1 FSB43004A Motion SPM 45 LV Series Features UL Certified No.E209204(UL1557) 40 V, R DS(ON) =3.0 m max.) 3-phase MOSFET Inverter Module Including Control IC for Gate Drive and Protection. Ceramic Substrate. Three Separate Open-Emitter Pins from Low-Side MOSFETs for Three-Leg Current Sensing. Single-Grounded Power Supply for Built-in HVIC. Isolation Rating of 800 Vrms/min. General Description May 2015 FSB43004A is a Motion SPM 45 LV module that Fairchild developed based on low-loss PowerTrench MOSFET technology as a compact motor drive inverter solution for small power applications supplied by low voltage battery. Applications Motion Control - Home Appliance / Industrial Motor. Figure 1. Packing Drawing ( Click to Activate 3D Content ) Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity FSB43004A FSB43004A SPMAA-A22 Rail Fairchild Semiconductor Corporation 1

2 Integrated Power Functions 40 V R DS(ON) = 2.1 m typ.) inverter for three-phase DC / AC power conversion (please refer to Figure 3) Integrated Drive, Protection, and System Control Functions For inverter high-side MOSFETs: gate drive circuit, high-voltage isolated high-speed level shifting, Under-Voltage Lock-Out (UVLO) Protection. For inverter low-side MOSFETs: gate drive circuit, Under-Voltage Lock-Out (UVLO) Protection. Fault signaling: corresponding to UV (low-side supply). Input interface: active-high interface, works with 3.3 / 5 V logic, Schmitt-trigger input Pin Configuration Figure 2.Top View 2015 Fairchild Semiconductor Corporation 2

3 Pin Descriptions Pin Number Pin Name Pin Description 1 P Positive DC-Link Input 2 W W Phase Output 3 V V Phase Output 4 U U Phase Output 5 N W Negative DC-Link Input 6 N V Negative DC-Link Input 7 N U Negative DC-Link Input 8 V FO Fault Output 9 IN (UL) PWM Input for Low-Side U Phase MOSFET Drive 10 IN (VL) PWM Input for Low-Side V Phase MOSFET Drive 11 IN (WL) PWM Input for Low-Side W Phase MOSFET Drive 12 COM Common Supply Ground 13 Vcc Common Supply Voltage for IC and Low-side MOSFET Drive 14 IN (UH) PWM Input for High-Side U Phase MOSFET Drive 15 IN (VH) PWM Input for High-Side V Phase MOSFET Drive 16 IN (WH) PWM Input for High-Side W Phase MOSFET Drive 17 V B(U) Supply Voltage for High-Side U Phase MOSFET Drive 18 V S(U) Supply Ground for High-Side U Phase MOSFET Drive 19 V B(V) Supply Voltage for High-Side V Phase MOSFET Drive 20 V S(V) Supply Ground for High-Side V Phase MOSFET Drive 21 V B(W) Supply Voltage for High-Side W Phase MOSFET Drive 22 V S(W) Supply Ground for High-Side W Phase MOSFET Drive 2015 Fairchild Semiconductor Corporation 3

4 Internal Equivalent Circuit and Input/Output Pins (22) V B(W) (21) V S(W) (20) V B(V) (19) V S(V) (18) V B(U) (17) V S(U) (16) IN (WH) (15) IN (VH) (14) IN (UH) VB(W) VS(W) VB(V) VS(V) VB(U) VS(U) IN(WH) IN(VH) IN(UH) VCC COM HVIC OUT(WH) VS(W) OUT(VH) VS(V) OUT(UH) VS(U) P (1) W (2) V (3) U (4) (13) V CC VCC OUT(WL) (12) COM COM N W (5) (11) IN (WL) (10) IN (VL) (9) IN (UL) IN(WL) IN(VL) IN(UL) LVIC OUT(VL) N V (6) (8) V FO VFO OUT(UL) N U (7) Figure 3. Internal Block Diagram 2015 Fairchild Semiconductor Corporation 4

5 Absolute Maximum Ratings (TJ = 25 C, unless otherwise specified.) Inverter Part Symbol Parameter Conditions Rating unit V PN 1st Note: 1. Rating value of marking * is calculation value or design factor. Control Part DC Link Input Voltage Drain-Source Voltage Applied between P - N (U), N (V), N (W) 40 V * ± I D Drain Current T C = 25 C, T J 150 C 71 A T C = 100 C, T J 150 C 47 A * ± I DP Peak Drain Current T C = 25 C, under 1ms Pulse Width, T J 150 C 180 A * P D Maximum Power Dissipation T C = 25 C, per Chip, T J 150 C 31 W T J Operating Junction Temperature -40 ~ 150 C Symbol Parameter Conditions Rating unit V CC Supply Voltage Applied between V CC - COM 20 V V BS Supply Voltage Applied between V B(U) - V S(U), V B(V) - V S(V), V B(W) - V S(W) 20 V V IN PWM Signal Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL), IN (VL), IN (WL) - COM -0.3 ~ V CC +0.3 V V FO Fault Output Supply Voltage Applied between V FO - COM -0.3 ~ V CC +0.3 V I FO Fault Output Current Sink Current at V FO Pin 1 ma Total System Symbol Parameter Conditions Rating unit T STG Storage Temperature -40 ~ 150 C V ISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect 800 V rms Pins to Ceramic Substrate Thermal Characteristics Symbol Parameter Condition Min. Typ. Max. Unit R th(j-c) Junction to Case Thermal Resistance Inverter MOSFET part(per 1/6 module) C/W 2015 Fairchild Semiconductor Corporation 5

6 Electrical Characteristics (TJ = 25 C, unless otherwise specified.) Inverter Part Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V IN =0 V, I D =250 A (2nd Notes 1) V R DS(ON) Drain-Source ON Resistance V CC = V BS = 15 V, V IN = 5 V, I D = 60 A m V Source-Drain Diode V SD CC = V BS = 15 V, V IN = 0 V, I SD = 60 A V Forward Voltage t ON Switching Characteristic V PN = 20 V, V CC = V BS = 15 V, I D = 60 A, ns t C(ON) V IN = 0 V 5 V, High side, Inductive Load (2nd Notes 2) ns t OFF ns t C(OFF) ns t rr ns I rr A t ON V PN = 20 V, V CC = V BS = 15 V, I D = 60 A, ns t C(ON) V IN = 0 V 5 V, Low side, Inductive Load (2nd Notes 2) ns t OFF ns t C(OFF) ns t rr ns I rr A I DSS Drain-Source Leakage Current V DS = V DSS A 2nd Notes: 1. BV DSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET. V PN should be sufficiently less than this value considering the effect of the stray inductance so that V DS should not exceed BV DSS in any case. 2. t ON and t OFF include the propagation delay time of the internal drive IC. t C(ON) and t C(OFF) are the switching time of MOSFET itself under the given gate driving condition internally. For the detailed information, please see Figure % ID 100% ID t rr V DS I D I D V DS V IN V IN t ON t OFF t C(ON) t C(OFF) 10% ID 90% ID 10% VDS (a) turn-on 10% VDS 10% ID (b) turn-off Figure 4. Switching Time Definition 2015 Fairchild Semiconductor Corporation 6

7 Control Part Symbol Parameter Conditions Min. Typ. Max. Unit I QCC I QBS Quiescent V CC Supply Current Quiescent V BS Supply Current V CC = 15 V, V IN = 0 V V BS = 15 V, V IN = 0 V V CC - COM ma V B(U) - V S(U), V B(V) -V S(V), ma V B(W) - V S(W) V FOH Fault Output Voltage 10 k to 5 V Pull-up Normal V V FOL Fault V UV CCD Supply Circuit Under- Detection Level V UV CCR Voltage Protection Reset Level V UV BSD Detection Level V UV BSR Reset Level V t FOD Fault-Out Pulse Width s V IN(ON) ON Threshold Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL), V V IN(OFF) OFF Threshold Voltage IN (VL), IN (WL) - COM V Recommended Operating Conditions Symbol Parameter Conditions Value Min. Typ. Max. V PN Supply Voltage Applied between P - N (U), N (V), N (W) V V CC Control Supply Voltage Applied between V CC - COM V V BS Control Supply Voltage Applied between V B(U) - V S(U), V B(V) - V S(V), V B(W) - V S(W) V dv CC /dt, dv BS /dt Control Supply Variation -1-1 V/ s V SEN Voltage for Current Sensing Applied between N U, N V, N W - COM (Including surge voltage) Unit -4-4 V 2015 Fairchild Semiconductor Corporation 7

8 Mechanical Characteristics and Ratings Parameter Conditions Limits Min. Typ. Max. Units Mounting Torque Mounting Screw: - M N m Device Flatness See Figure m Weight g + + Figure 5. Flatness Measurement Position 2015 Fairchild Semiconductor Corporation 8

9 Time Charts of Protective Function Input Signal Protection Circuit State Control Supply Voltage Output Current Fault Output Signal UV CCR RESET a1 a2 UV CCD SET a3 a4 a5 RESET a6 a7 a1 : Control supply voltage rises: after the voltage rises UV CCR, the circuits start to operate when the next input is applied. a2 : Normal operation: MOSFET ON and carrying current. a3 : Under-Voltage detection (UV CCD ). a4 : MOSFET OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under-Voltage reset (UV CCR ). a7 : Normal operation: MOSFET ON and carrying current. Figure 6. Under-Voltage Protection (Low-side) Input Signal Protection Circuit State RESET SET RESET Control Supply Voltage UV BSR b1 b2 UV BSD b3 b4 b5 b6 Output Current Fault Output Signal High-level (no fault output) b1 : Control supply voltage rises: after the voltage reaches UV BSR, the circuits start to operate when the next input is applied. b2 : Normal operation: MOSFET ON and carrying current. b3 : Under-Voltage detection (UV BSD ). b4 : MOSFET OFF in spite of control input condition, but there is no fault output signal. b5 : Under-Voltage reset (UV BSR ). b6 : Normal operation: MOSFET ON and carrying current Figure 7. Under-Voltage Protection (High-side) 2015 Fairchild Semiconductor Corporation 9

10 M C U Gating WH Gating VH Gating UH RS RS RS +15V RBS DBS RBS DBS RBS DBS CPS CPS CBS CBSF CBS CBSF CBS CBSF CPS CSP15F (22) V B(W) (21) V S(W) (20) V B(V) (19) V S(V) (18) V B(U) (17) V S(U) (16) IN (WH) (15) IN (VH) (14) IN (UH) (13) V CC (12) COM VB(W) VS(W) VB(V) VS(V) VB(U) VS(U) IN(WH) IN(VH) IN(UH) VCC COM VCC COM HVIC OUT(WH) VS(W) OUT(VH) VS(V) OUT(UH) VS(U) OUT(WL) P (1) W (2) V (3) U (4) N W (5) Motor CDCS VDC Gating WL Gating VL Gating UL +5V RS RS RS CPS CPS CPS (11) IN (WL) (10) IN (VL) (9) IN (UL) IN(WL) IN(VL) IN(UL) LVIC OUT(VL) N V (6) RSH Fault RPF (8) V FO VFO OUT(UL) N U (7) CPF CSP15 Current Sensing 3rd Notes: 1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2~3 cm) 2. V FO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 ma. 3. Input signal is High-Active type. There is a 5 kω resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommended for the prevention of input signal oscillation. R F C F constant should be selected in the range 50~150ns. (Recommended R S =100 Ω, C PS =1 nf) 4. Each capacitors should be mounted as close to the SPM pins as possible. 5. Relays are used at almost every systems of electrical equipment of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 6. The zener diode should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals. (Recommended zener diode=24 / 1 W) Figure 8. Typical Application Circuit 2015 Fairchild Semiconductor Corporation 10

11 Detailed Package Outline Drawings Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: Fairchild Semiconductor Corporation 11

12 2015 Fairchild Semiconductor Corporation 12

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