Smart Highside Power Switch

Transcription

1 POFET Data Sheet BTS 443 P Smart ighside Power Switch eversave everse battery protection by self turn on of power MOSFET Features Short circuit protection Current limitation Overload protection Thermal shutdown Overvoltage protection (including load dump) oss of ground protection oss of protection (with external diode for charged inductive loads) ery low standby current Fast demagnetisation of inductive loads Electrostatic discharge (ESD) protection Optimized static electromagnetic compatibility (EMC) Product Summary Operating voltage (on) On-state resistance ON 16 m9 oad current (O) I(O) 25 A Current limitation I(SCr) 65 A Package TO (DPAK 5 pin; less than half the size as TO 22 SMD) Diagnostic Function Proportional load current sense (with defined fault signal while thermal shutdown) Application Power switch with current sense diagnostic feedback for 12 and 24 DC grounded loads All types of resistive, capacitve and inductive loads (no PWM with inductive loads) eplaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. 3 & Tab + oltage source Overvoltage protection Current limit Gate protection 2 ESD oltage sensor ogic Charge pump evel shifter ectifier imit for unclamped ind. loads Output oltage detection Current Sense 1, 5 I oad I Temperature sensor I POFET 4 oad GND ogic GND Infineon Technologies AG Page 1 of Jan-23

2 Pin Symbol Function 1 O Output to the load. The pin 1 and 5 must be shorted with each other especially in high current applications!*) 2 I Input, activates the power switch in case of short to ground Tab/(3) + Positive power supply voltage, the tab is shorted to this pin. 4 S Diagnostic feedback providing a sense current proportional to the load current; high current on failure (see Truth Table) 5 O Output to the load. The pin 1 and 5 must be shorted with each other especially in high current applications!*) *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Maximum atings at Tj = 25 C unless otherwise specified Parameter Symbol alues Unit Supply voltage (overvoltage protection see page 4) 36 Supply voltage for full short circuit protection 24 1) (see also diagram on page 9) T j = C: oad dump protection oaddump = U A + s, U A = ) oad dump 6 I = 2 9, = 2.7 9, t d = 2 ms, = low or high oad current (Short-circuit current, see page 4) I self-limited A Operating temperature range Storage temperature range T j T stg Power dissipation (DC) TC 25 C P tot 42 W Inductive load switch-off energy dissipation, single pulse U=12, I=1A, =3m T j =15 C: E AS.15 J Electrostatic discharge capability (ESD) (uman Body Model) acc. ESD assn. std. S ; =1.5k9; C=1pF ESD 4. k Current through input pin (DC) Current through current sense pin (DC) see internal circuit diagrams page 7 I +15, -1 I +15, -1 C ma 1 ) Short circuit is tested with 1m9 and 2µ 2) oad dump is set-up without the DUT connected to the generator per O and D 4839 Infineon Technologies AG Page 2 of Jan-23

3 Thermal Characteristics Parameter and Conditions Symbol alues Unit min typ max Thermal resistance chip - case: thjc 3) K/W junction - ambient (free air): thja SMD version, device on PCB 4) : 45 Electrical Characteristics Parameter and Conditions Symbol alues Unit at T j = -4 C...15 C, = 12 unless otherwise specified min typ max oad Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,5) =, I = 5 A T j =25 C: T j =15 C: Output voltage drop limitation at small load currents (Tab to pin 1,5) T j = C: Nominal load current (Tab to pin 1,5) O Proposal: ON =.5, T C = 85 C Turn-on time to 9% : Turn-off time to 1% : = 2,59, T j = C Slew rate on 1 to 3%, = T j = C Slew rate off 7 to 4%, = T j = C ON m ON(N) m I (O) A t on 15 t off s d /dt on / s -d/dt off / s 3) Thermal resistance thc case to heatsink (about K/W with silicone paste) not included! 4) Device on 5mm*5mm*1.5mm epoxy PCB F4 with 6cm 2 (one layer, 7 m thick) copper area for connection. PCB is vertical without blown air. Infineon Technologies AG Page 3 of Jan-23

4 Parameter and Conditions Symbol alues Unit at T j = -4 C...15 C, = 12 unless otherwise specified min typ max Operating Parameters Operating voltage (=) (on) Undervoltage shutdown 5) b(u) Undervoltage restart of charge pump (ucp) Overvoltage protection 6) I =15 ma Standby current I = T j = C: T j =15 C: Z, I (off) A Protection Functions Short circuit current limit (Tab to pin 1,5) ON = 12, time until limitation max. 3µs Tj =-4 C: Tj =25 C: Tj =+15 C: I (SC) epetitive short circuit current limit, Tj = Tjt I (SCr) A Output clamp (inductive load switch off) at = - ON(C) (e.g. overvoltage) I = 4 ma 7) ON(C) Thermal overload trip temperature T jt C Thermal hysteresis,t jt K A everse Battery everse battery voltage On-state resistance (pin 1,5 to pin 3) = - 8, =, I = -5 A, = 1 k9, = -12, =, I = -5 A, = 1 k9, T j =25 C: T j =25 C: T j =15 C: ON(rev) Integrated resistor in line m9 5) b=- see diagram page 11. 6) 7) see also ON(C) in circuit diagram page 7. see also page 9 Infineon Technologies AG Page 4 of Jan-23

5 Parameter and Conditions Symbol alues Unit at T j = -4 C...15 C, = 12 unless otherwise specified min typ max Diagnostic Characteristics Current sense ratio, static on-condition k I = I : I, ON < 1.5 8), < - 5, b > 4.5 I = 2A, Tj = -4 C: Tj = +25 C: Tj = +15 C: I = 5A, Tj = -4 C: Tj = +25 C: Tj = +15 C: I = 2.5A, Tj = -4 C: Tj = +25 C: Tj = +15 C: I = 1A, Tj = -4 C: Tj = +25 C: Tj = +15 C: k I I = (e.g. during deenergising of inductive loads): -- n.a. -- Sense current under fault conditions; DS >1.5, typ. T j = C: I,fault ma Fault-Sense signal delay after negative input slope t delay(fault).8 ms Current sense leakage current I = : =, I : I () -- I () -- Current sense settling time to I static 1% after positive input slope, I = 2 A, t son() s T j = C (not tested, specified by design) Overvoltage protection I = 15 ma T j = C: b(z) Input equired current capability of input switch I (on) ma T j = C: Maximum input current for turn-offt j = C: I (off) µa A 8) If ON is higher, the sense current is no longer proportional to the load current due to sense current saturation. Infineon Technologies AG Page 5 of Jan-23

6 Truth Table Normal operation Overload Short circuit to GND Overtemperature Short circuit to Open load Input Current level Output level Z Current Sense I nominal I fault I fault I fault <nominal 9 = "ow" evel = "igh" evel Z = high impedance, potential depends on external circuit Terms I b 3 ON I 2 POFET 1,5 b 4 I I D S Two or more devices can easily be connected in parallel to increase load current capability. 9) ow ohmic short to may reduce the output current I and therefore also the sense current I. Infineon Technologies AG Page 6 of Jan-23

7 Input circuit (ESD protection) Inductive and overvoltage output clamp Z1 + Z, ZD ON b I POFET ON is clamped to ON(Cl) = 42 typ ESD-Zener diode: 68 typ., max 15 ma; Overvoltage protection of logic part + Current sense output Normal operation Z, Z, I,fault ZD Z, ogic POFET I Z, = 68 (typ.), = 1 k9 nominal (or 1 k9 /n, if n devices are connected in parallel). I S = I /k ilis can be only driven by the internal circuit as long as out - > 5. If you want to measure load currents up to I (M), should be less than I ( M ) 5 / K Note: For large values of the voltage can reach almost. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. ilis. Z, Signal GND = 29 typ, Z, = Z, = 68 typ., = 1 k9 nominal. Note that when overvoltage exceeds 73 typ. a voltage above 5 can occur between and GND, if, Z, are not used. Infineon Technologies AG Page 7 of Jan-23

8 ersion b: Data Sheet BTS 443 P eversave (everse battery protection) - POFET ogic Power Transistor Zb Signal D Power Note that there is no reverse battery protection when using a diode without additional Z-diode Z, Zb. ersion c: Sometimes a necessary voltage clamp is given by non inductive loads connected to the same switch and eliminates the need of clamping circuit: 1k9, = 1 k9 nominal. Add for reverse battery protection in applications with above 16; recommended value: A, = 12 To minimise power dissipation at reverse battery operation, the summarised current into the and pin should be about 5mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through and. POFET disconnect with energised inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. ( Z < 73 or Zb < 3 if =). For higher clamp voltages currents at and have to be limited to 25 ma. ersion a: POFET Z Infineon Technologies AG Page 8 of Jan-23

9 Inductive load switch-off energy dissipation E I POFET Energy stored in load inductance: E AS i (t) Z { E oad E E Data Sheet BTS 443 P Maximum allowable load inductance for a single switch off = f (I ); T j,start = 15 C, = 12, = 9 [m] E = 1 /2 I 2 While demagnetising load inductance, the energy dissipated in POFET is E AS = E + E - E = ON(C) i (t) dt, with an approximate solution for 9: E AS = I I 2 ( + (C) ) ln (1+ (C) ) The device is not suitable for permanent PWM with inductive loads if active clamping occurs every cycle I [A] Infineon Technologies AG Page 9 of Jan-23

10 Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2a: Switching motors and lamps: I I 9% t on d/dtoff 1% d/dton t off I tslc() tslc() I I oad 1 oad 2 I t son() t soff() t I t The sense signal is not valid during a settling time after turn-on/off and after change of load current. Sense current above I,fault can occur at very high inrush currents. Figure 1b: typical behaviour of sense output: Figure 2b: Switching an inductive load: I S I I,fault >= 2.5mA I (lim) = 2A I I I t Infineon Technologies AG Page 1 of Jan-23

11 Figure 3a: Short circuit: Figure 5a: Undervoltage restart of charge pump, overvoltage clamp 12 I 1 8 = I (SCp) I (SCr) 6 4 dynamic, short Undervoltage not below b(u) ON(C) I I fault 2 I = ON(C) t b(ucp) 8 1 b(u) 12 Figure 4a: Overtemperature eset if T j <T jt I I I,fault Auto estart T j t Infineon Technologies AG Page 11 of Jan-23

12 Figure 6b: Current sense ratio 1 : k I Figure 6a: Current sense versus load current: [ma] I [A] I [A] I Figure 7a: Output voltage drop versus load current: [] ON.1 ON ON(N) [A] 8 I 1 ) This range for the current sense ratio refers to all devices. The accuracy of the k I can be raised by means of calibration the value of k I for every single device. Infineon Technologies AG Page 12 of Jan-23

13 Package and Ordering Code All dimensions in mm D-Pak-5 Pin: TO Sales Code BTS443P Ordering code Q676-S744-A 2 1± ±.1 A B ± (4.17).8 ±.15 1± max per side x.6 ± M A B.51 min GPT9161 All metal surfaces tin plated, except area of cut. Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 76, D München Infineon Technologies AG 1999 All ights eserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies epresentatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. ife support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Infineon Technologies AG Page 13 of Jan-23