SM4953K. Features. Ordering and Marking Information. Dual P-Channel Enhancement Mode MOSFET -30V/-4.9A, R DS(ON) =53mW(typ.

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1 Dual P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4.9, R DS(ON) V GS =-10V R DS(ON) V GS =-4.5V Reliable and Rugged Lead Free and Green Device vailable (RoHS Compliant) ESD Protection S1 G1 S2 G2 Top View of SOP-8 D1 (8) D1 (7) D1 D1 D2 D2 D2 (6) D2 (5) pplications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G1 (2) G2 (4) S1 (1) S2 (3) Ordering and Marking Information P-Channel MOSFET SM4953 SM4953 K : SM4953 XXXXX ssembly Material Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel (2500ea/reel) ssembly Material L : Lead Free Device G: Halogen and Lead Free Device XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1

2 bsolute Maximum Ratings (T = 25 C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage -30 V GSS Gate-Source Voltage ±25 V I D * Continuous Drain Current -4.9 V GS =-10V I DM * Pulsed Drain Current -20 I S * Diode Continuous Forward Current -2 T J Maximum Junction Temperature 150 T STG Storage Temperature Range -55 to 150 C P D * Power Dissipation for Single Operation T =25 C 2 T =100 C 0.8 W R qj * Thermal Resistance-Junction to mbient 62.5 C/W Note: *Surface Mounted on 1in 2 pad area, t 10sec. Electrical Characteristics (T = 25 C unless otherwise noted) Symbol Parameter Test Condition SM4953K Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250m V I DSS V DS =-24V, V GS =0V Zero Gate Voltage Drain Current m T J =85 C V GS(th) Gate Threshold Voltage V DS =V GS, I DS =250m V I GSS Gate Leakage Current V GS =±20V, V DS =0V - - ±10 m a R DS(ON) a V SD V GS =-10V, I DS = Drain-Source On-state Resistance mw V GS =-4.5V, I DS = Diode Forward Voltage I SD =-1.7, V GS =0V V Gate Charge Characteristics b Q g Total Gate Charge Q gs Gate-Source Charge V DS =-15V, V GS =-10V, I DS = Gate-Drain Charge Q gd nc 2

3 Electrical Characteristics (Cont.) (T = 25 C unless otherwise noted) Symbol Parameter Test Condition SM4953K Min. Typ. Max. Unit Dynamic Characteristics b R G Gate Resistance V GS =0V,V DS =0V,F=1MHz W C iss Input Capacitance V GS =0V, C oss Output Capacitance V DS =-15V, Reverse Transfer Capacitance Frequency=1.0MHz C rss t d(on) Turn-on Delay Time t r Turn-on Rise Time V DD =-15V, R L =15W, I DS =-1, V GEN =-10V, t d(off) Turn-off Delay Time R G =6W ns t f Turn-off Fall Time t rr Reverse Recovery Time I DS =-4.9, ns Q rr Reverse Recovery Charge dl SD /dt=100/ms nc Notes: a : Pulse test ; pulse width 300ms, duty cycle 2%. b : Guaranteed by design, not subject to production testing. pf 3

4 Typical Characteristics Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current () T =25 o C T =25 o C,V G =-10V Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) Safe Operation rea Thermal Transient Impedance -ID - Drain Current () Rds(on) Limit 300ms 1ms 10ms 100ms 1s 0.1 DC T =25 o C VDS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance Single Pulse 0.2 Duty = 0.5 Mounted on 1in 2 pad R qj : 62.5 o C/W 1E-3 1E-4 1E Square Wave Pulse Duration (sec) 4

5 Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance -ID - Drain Current () V GS = -5, -6, -7, -8, -9, -10V -4V -3V -2V RDS(ON) - On - Resistance (mw) V GS = -10V V GS = -4.5V VDS - Drain - Source Voltage (V) ID - Drain Current () Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mw) I D =4.9 Normalized Threshold Vlotage I DS = -250m VGS - Gate - Source Voltage (V) Tj - Junction Temperature ( C) 5

6 Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward V GS = -10V I DS = Normalized On Resistance IS - Source Current () 1 T j =150 o C T j =25 o C 0.25 R j =25 o C: 53mW Tj - Junction Temperature ( C) -VSD - Source-Drain Voltage (V) Capacitance Gate Charge Frequency=1MHz 10 9 V D = -10V I D = -4.9 C - Capacitance (pf) 700 Ciss Coss 100 Crss VGS - Gate-source Voltage (V) VDS - Drain-Source Voltage (V) QG - Gate Charge (nc) 6

7 valanche Test Circuit and Waveforms VDS L tv DUT ES VDD RG VDD tp IS IL 0.01W tp VDSX(SUS) VDS Switching Time Test Circuit and Waveforms VDS RG VGS DUT RD VDD VGS 10% td(on) tr td(off) tf tp 90% VDS 7

8 Package Information SOP-8 D -T- SETING PLNE < 4 mils SEE VIEW E1 E h X 45 e b c 1 2 VIEW L 0.25 GUGE PLNE SETING PLNE S Y M B MILLIMETERS O L MIN. MX. 1 c D E E1 e h L b SOP BSC BSC MIN INCHES MX Note: 1. Follow JEDEC MS Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. - RECOMMENDED LND PTTERN UNIT: mm 8

9 Carrier Tape & Reel Dimensions OD0 P0 P2 P1 H E1 OD1 B T B0 W F K0 B 0 SECTION - SECTION B-B d T1 pplication H T1 C d D W E1 F ± MIN. 1.5 MIN MIN. 12.0± ± ± SOP-8 P0 P1 P2 D0 D1 T 0 B0 K0 4.0± ± ± MIN ± ± ±0.20 (mm) 9

10 Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile 10

11 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) 100 C 150 C seconds 150 C 200 C seconds verage ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness 183 C seconds Volume mm 3 <350 Table 2. Pb-free Process Classification Temperatures (Tc) 217 C seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds verage ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Volume mm <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm Volume mm 3 >2000 <1.6 mm 260 C 260 C 260 C 1.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERBILITY JESD-22, B102 5 Sec, 245 C HTRB JESD-22, Hrs, 80% of VDS Tjmax HTGB JESD-22, Hrs, 100% of VGS Tjmax PCT JESD-22, Hrs, 100%RH, 2atm, 121 C TCT JESD-22, Cycles, -65 C~150 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: Fax:

Features. P-Channel Enhancement Mode MOSFET

Features. P-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET Features Pin Description -4V/-25, R DS(ON) = 4mΩ (typ.) @ V GS = -V R DS(ON) = 55mΩ (typ.) @ V GS = -5V Super High Dense Cell Design G D S Reliable and Rugged Lead Free