Features -2.4A -1.8A. Part Number Case Packaging DMC6070LND-7 POWERDI ,000/Tape & Reel DMC6070LND-13 POWERDI ,000/Tape & Reel

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1 YYWW ADVANCED NEW PRODUCT INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI Product Summary Device V (BR)DSS R DS(ON) max Q 6V Q -6V I D max T A = +5 C V = V 3.A V = 4.5V.7A V = -V V = -4.5V -.4A -.8A Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Totally Lead-Free & Fully RoHS Compliant (Notes & ) Halogen and Antimony Free. Green Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state resistance (R DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Power Management Functions Analog Switch Mechanical Data Case: POWERDI Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-STD- Terminals: Finish Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-, Method 8 Weight:.7 grams (Approximate) POWERDI Equivalent Circuit Pin S G S G D D G G D D D D S S Top View Bottom View N-Channel MOSFET P-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging -7 POWERDI3333-8,/Tape & Reel -3 POWERDI ,/Tape & Reel Notes:. No purposely added lead. Fully EU Directive /95/EC (RoHS) & /65/EU (RoHS ) compliant.. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information C6A C6 C6A = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 5 for 5) WW = Week Code ( to 53) POWERDI is a registered trademark of Diodes Incorporated. Document number: DS385 Rev. - of September 5

2 Maximum Ratings Q N-CHANNEL A = +5 C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V DSS 6 V Gate-Source Voltage V S ± V Continuous Drain Current (Note 5) V = V Steady T A = +5 C 3. I State D A T A = +7 C.5 T t<s A = +5 C 3.9 I D A T A = +7 C 3. Maximum Body Diode Forward Current (Note 5) I S A Pulsed Drain Current (μs Pulse, Duty Cycle = %) I DM 5 A Maximum Ratings Q P-CHANNEL A = +5 C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V DSS -6 V Gate-Source Voltage V S ± V Continuous Drain Current (Note 5) V = -V Steady T A = +5 C -.4 I State D A T A = +7 C -.9 T t<s A = +5 C -.9 I D A T A = +7 C -.3 Maximum Body Diode Forward Current (Note 5) I S - A Pulsed Drain Current (μs Pulse, Duty Cycle = %) I DM - A Thermal Characteristics A = +5 C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P D.4 W Thermal Resistance, Junction to Ambient (Note 5) Steady state 9 R t<s θja 6 C/W Thermal Resistance, Junction to Case (Note 5) R θjc 3 Operating and Storage Temperature Range T J, T STG -55 to +5 C Note: 5. Device mounted on FR-4 substrate PC board, oz copper, with thermal bias to bottom layer inch square copper plate. Document number: DS385 Rev. - of September 5

3 Electrical Characteristics Q N-CHANNEL A = +5 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS 6 V V = V, I D = 5μA Zero Gate Voltage Drain Current T J = +5 C I DSS μa V DS = 6V, V = V Gate-Source Leakage I S ± na V = ±6V, V DS = V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V (TH) 3 V V DS = V, I D = 5μA Static Drain-Source On-Resistance R DS(ON) 6 85 V = V, I D =.5A mω 7 V = 4.5V, I D =.5A Forward Transfer Admittance Y fs 3.7 S V DS = 5V, I D =.5A Diode Forward Voltage V SD.7. V V = V, I S = 3A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss 73 pf V DS = V, V = V, Output Capacitance C oss 34 pf f = MHz Reverse Transfer Capacitance C rss 3 pf Gate Resistance R g.3 Ω V DS = V, V = V, f = MHz Total Gate Charge (V = V) Q g.5 nc Total Gate Charge (V = 4.5V) Q g 5. nc Gate-Source Charge Q gs. nc V DS = 3V, I D = 3A Gate-Drain Charge Q gd.5 nc Turn-On Delay Time t D(ON) 9.6 ns Turn-On Rise Time t R ns V = V, V DS = 3V, Turn-Off Delay Time t D(OFF) 6 ns R G = 5Ω, R L = Ω Turn-Off Fall Time t F ns Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. Document number: DS385 Rev. - 3 of September 5

4 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCED NEW PRODUCT INFORMATION I D, DRAIN CURRENT (A) I D, DRAIN CURRENT (A). V =.V V DS = 5.V 8. V = 4.5V 8 V = 4.V V = 3.5V V = 3.V 5 o C 85 o C 5 o C V =.8V 5 o C -55 o C V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Output Characteristic V, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic V = 4.V V =.V.6.3 I D =.5A I D =.5A I D, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage V, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic. V = 4.5V o C 5 o C.4 V =.V, I D = 5.A. 85 o C. V = 4.5V, I D =.A.5 5 o C -55 o C I D, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Temperature Document number: DS385 Rev. - 4 of September 5

5 V (V) I D, DRAIN CURRENT (A) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) ADVANCED NEW PRODUCT INFORMATION R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) V (TH), GATE THRESHOLD VOLTAGE (V) I D = 5µA.9 V = 4.5V, I D =.A I D = ma.6 V =.V, I D = 5.A T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Temperature V = V T J, JUNCTION TEMPERATURE ( ) Figure 8. Gate Threshold Variation vs. Junction Temperature f=mhz 8 C iss 6 4 T A = 85 o C T A = 5 o C T A = 5 o C T A = 5 o C T A = -55 o C C oss C rss V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance R DS(ON) Limited 8 6 P W =µs P W =ms 4 V DS = 3V, I D = 3A Q g (nc) Figure. Gate Charge. P W =ms T J(Max) =5 P W =ms T C =5 P W =s. Single Pulse P W =s DUT on *MRP DC board V =V.. V DS, DRAIN-SOURCE VOLTAGE (V) Figure. SOA, Safe Operation Area Document number: DS385 Rev. - 5 of September 5

6 r(t), TRANSIENT THERMAL RESISTANCE D=.7 D=.5 D=.3 D=.9. D=. D=.5. D=. D=. D=.5 R θja (t)=r(t) * R θja D=Single Pulse R θja =34 /W Duty Cycle, D=t / t. E t, PULSE DURATION TIME (sec) Figure 3. Transient Thermal Resistance Document number: DS385 Rev. - 6 of September 5

7 Electrical Characteristics Q P-CHANNEL A = +5 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV DSS -6 V V = V, I D = -5μA Zero Gate Voltage Drain Current T J = +5 C I DSS - μa V DS = -6V, V = V Gate-Source Leakage I S ± na V = ±6V, V DS = V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V (TH) - -3 V V DS = V, I D = -5μA Static Drain-Source On-Resistance R DS(ON) 5 5 V = -V, I D = -A mω 7 5 V = -4.5V, I D = -.5A Forward Transfer Admittance Y fs.8 S V DS = -5V, I D = -A Diode Forward Voltage V SD V V = V, I S = -A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss 6 pf V DS = -V, V = V, Output Capacitance C oss 36 pf f = MHz Reverse Transfer Capacitance C rss 6 pf Gate Resistance R g 3 Ω V DS = V, V = V, f = MHz Total Gate Charge (V = -V) Q g 8.9 nc Total Gate Charge (V = -4.5V) Q g 4.3 nc Gate-Source Charge Q gs.4 nc V DS = -3V, I D = -A Gate-Drain Charge Q gd.7 nc Turn-On Delay Time t D(ON) 7.6 ns Turn-On Rise Time t R.6 ns V = -V, V DS = -3V, Turn-Off Delay Time t D(OFF) 79.8 ns R G = 5Ω, I D = -A Turn-Off Fall Time t F 37.8 ns Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. Document number: DS385 Rev. - 7 of September 5

8 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) ADVANCED NEW PRODUCT INFORMATION I D, DRAIN CURRENT (A) I D, DRAIN CURRENT (A). V = -V V = -4.5V V DS =- 5.V 8. V = -4.V 8 6. V = -3.5V V = -3.V V = -.8V V = -.5V 5 o C 5 o C 85 o C 5 o C -55 o C V DS, DRAIN -SOURCE VOLTAGE (V) Figure 4 Typical Output Characteristics V, GATE-SOURCE VOLTAGE (V) Figure 5. Typical Transfer Characteristic.9 I = -.A D V = -4.5V V = -V.3. I = -.5mA D I D, DRAIN SOURCE CURRENT (A) Figure 6 Typical On-Resistance vs. Drain Current and Gate Voltage.5.4 V = -4.5V V, GATE-SOURCE VOLTAGE (V) Figure 7 Typical Drain-Source On-Resistance vs. Gate-Source Voltage.3 5 o C 5 o C.6.4 V = -.V, I D = -5.A.. 85 o C 5 o C -55 o C..8 V = -4.5V, I D = -.A I D, DRAIN CURRENT (A) Figure 8. Typical On-Resistance vs. Drain Current and Temperature T J, JUNCTION TEMPERATURE ( ) Figure 9. On-Resistance Variation with Temperature Document number: DS385 Rev. - 8 of September 5

9 I D, DRAIN CURRENT (A) C T, JUNCTION CAPACITANCE (pf) V (V) ADVANCED NEW PRODUCT INFORMATION R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) V (TH), GATE THRESHOLD VOLTAGE (V) I D = -ma. V = -4.5V, I D = -.A.5.5 I D = -5µA..5 V = -.V, I D = -5.A T J, JUNCTION TEMPERATURE ( ) Figure. On-Resistance Variation with Temperature T J, JUNCTION TEMPERATURE ( ) Figure. Gate Threshold Variation vs. Junction Temperature f=mhz 8 C iss 6 C oss 4 V DS = -3V, I D = -A C rss V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance 4 6 Q g (nc) 8 Figure 3. Gate Charge R DS(ON) Limited. P W =µs P W =ms P W =ms T J (Max) =5 P W =ms T C =5 P W =s. Single Pulse DUT on *MRP P W =s board DC V =V.. V DS, DRAIN-SOURCE VOLTAGE (V) Figure 4. SOA, Safe Operation Area Document number: DS385 Rev. - 9 of September 5

10 r(t), TRANSIENT THERMAL RESISTANCE D=.7 D=.5 D=.3 D=.9. D=. D=.5. D=. D=. D=.5 D=Single Pulse. E t, PULSE DURATION TIME (sec) Figure 5. Transient Thermal Resistance R θja (t)=r(t) * R θja R θja =34 /W Duty Cycle, D=t / t Document number: DS385 Rev. - of September 5

11 Package Outline Dimensions Please see AP at for the latest version. POWERDI (Type UXB) D D A A E E L D L E a c POWERDI (Type UXB) Dim Min Max Typ A A b c..5.5 D D D E E E..3. e.65 L a All Dimensions in mm b e Suggested Pad Layout Please see AP at for the latest version. X POWERDI (Type UXB) Y Y Y Dimensions Value (in mm) C.65 X.4 X.37 Y.73 Y 3.5 C X Document number: DS385 Rev. - of September 5

12 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 5, Diodes Incorporated Document number: DS385 Rev. - of September 5

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