NOVA On-Line CMP Metrology and Its Use for Lot-to-Lot Process Control
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1 NOVA On-Line CMP Metrology and Its Use for Lot-to-Lot Process Control Taber H. Smith, Duane S. Boning MIT Simon J. Fang, Jerry A. Stefani, Greg B. Shinn, and Stephanie W. Butler Texas Instruments
2 Goals of the NOVA/CMP Project Assess the Quality of the NOVA On-Line Metrology Tool Gauge Study Failure Rate Long-Term Stability Implement Basic Run-by-Run Process Control
3 Gauge Study Performed to Measure... Variability due to measurement. Variability due to pattern recognition. Variability due to software wafer alignment. Variability due to loading. Variability due to slurry. Variability due to polishing.
4 Repeatability Summary Measurement Repeatability (Precision) Standard Deviation of 0.5 Ang. Precision metric (std/mean) of 0.006%; the spec is 0.1%. Pattern Recognition Repeatability Standard Deviation of 4.3 Ang. Precision metric (std/mean) of 0.05%; the spec is 0.2%. Software Alignment Repeatability Standard Deviation of 8.1 Ang. Precision metric (std/mean) of 0.09%; the spec is 0.3%.
5 Gauge Study Performed to Measure... Variability due to measurement. Variability due to pattern recognition. Variability due to software wafer alignment. Variability due to loading. Variability due to slurry. Variability due to polishing. 0.5 Angs. 4.3 Angs. 8.1 Angs.??? Spread at Pre-Polish Spread due to Cleaning Spread at Post-Polish Variability due to loading+slurry+processing 12 Angs. 8 Angs. 30 Angs. 10 Angs.
6 NOVA Post-Polish Thickness (Patterned Wafers) Cycle Skips Region 1 Region 2 Region 3 Site Thickness Individual Die Thickness (Angs.) Lot # Lot # Site-Not-Found Errors
7 Pre-Clean Nova vs. Post-Clean UV1280 (Region 1, Beginning) NOVA 83% Success Rate Nova Post CMP Thickness (Ang.) ~32 Ang. Spread 200 Ang. Offset 65 NOVA Cycle Skips 3 NOVA Site-Not-Found Errors UV1280 Post CMP Thickness (Ang.) UV % Success Rate
8 Pre-Clean Nova vs. Post-Clean UV1280 (Region 2, After Bounds on NOVA Tightened) NOVA 99% Success Rate Nova Post CMP Thickness (Ang.) ~31 Ang. Spread 251 Ang. Offset 1 NOVA Cycle Skips 3 NOVA Site-Not-Found Errors UV1280 Post CMP Thickness (Ang.) UV % Success Rate
9 Pre-Clean Nova vs. Post-Clean UV1280 (Region 3, Bounds Re-opened & Algorithm Changed) NOVA 99.5% Success Rate Nova Post CMP Thickness (Ang.) ~29 Ang. Spread 190 Ang. Offset 0 NOVA Cycle Skips 1 NOVA Site-Not-Found Errors UV1280 Post CMP Thickness (Ang.) UV % Success Rate
10 Pre-Clean Nova vs. Post-Clean UV1280 (Polished Patterned Wafers Overall) ~30 Ang. Spread 212 Ang. Offset NOVA 93% Success Rate 66 NOVA Cycle Skips 7 NOVA Site-Not-Found Errors UV % Success Rate
11 Goals of the NOVA/CMP Project Assess the Quality of the NOVA On-Line Metrology Tool Gauge Study Failure Rate Long-Term Stability Implement Basic Run-by-Run Process Control
12 Run by Run Control Experiment Plan Blanket Pilot Wafer Used to monitor particles, uniformity, and to calculate the blanket wafer-level polish rate to verify MIT model. Removal Rate Patterned Wafer NOVA meas. used to calculate EWMA and new polish time. MIT Patterned Wafer Measured ex-situ. Used to study the planarization length over the life of a CMP pad.. CMP Pad Life
13 Reliability Testing Summary 99% wafer alignment success rate 1 failure in 96 wafer loads. 99.7% site measurement success rate 7 site not found errors in 2112 measurements. NOVA System froze 2 times in 600 wafers over three days tries to keep measuring after wafer unloads, reboot takes less than 5 minutes. NOVA Wafer Handler Controller failed 1 time restart takes about 30 seconds.
14 Offset Between NOVA and UV1280 Offset = Average of (NOVA - UV1280) Offset at Pre-Polish Offset from Cleaning Offset at Post-Polish Unknown Effects Higher cleaning due to surface damage is known (Discussion with Greg Hames) This number seems consistent with these results Need to verify this measuring pre- and post- on NOVA Determine if this offset is a function of the device 47 Angs Angs Angs Angs.
15 EWMA Rate Estimation Calculate an Exponentially Weighted Moving Average (EWMA) of previously measured rates Rate EWMA ( 1 w) Rate [ 1] [ n] = w Rate [ n] + n Measured EWMA The higher w, the more recent values are weighted. The weight is chosen based on how noisy the process is.
16 EWMA Rate Estimation Estimate the rate to determine the process time. Deposition Rate Measured Rate EWMA Model Lot # See T. Smith and J. Stefani TAR on Control of Metal Sputter Deposition
17 Controlled Average Thickness (Polished Patterned Wafers) Thickness Average Thickness (Angs.) Lot Break-in After Nova Tweaked MSE = 96 Ang. MSE = 120 Ang. MSE = 280 Ang Lot # Lot #
18 Uncontrolled Average Thickness (Polished Patterned Wafers) Thickness Average Thickness (Angs.) Lot Break-in After Nova Tweaked MSE = 315 Ang. MSE = 315 Ang. MSE = 327 Ang Lot # Lot #
19 Uncontrolled Average Thickness (Polished Patterned Wafers) Thickness Average Thickness (Angs.) Lot Break-in After Nova Tweaked MSE = 256 Ang. MSE = 241 Ang. MSE = 280 Ang Lot # Lot #
20 Controlled Average Thickness (5 Sites on Polished Patterned Wafers) Region 1 Region 2 Region Thickness Average Thickness (Angs.) MSE = 130 Ang. MSE = 308 Ang. MSE = 280 Ang Lot # Lot #
21 Using Pilot Wafers with SFE to Control Average Patterned Wafer Thickness Thickness Average Thickness (Angs.) Lot Break-in After Nova Tweaked MSE = 125 Ang. MSE = 139 Ang. MSE = 238 Ang Lot # Lot #
22 CMP Without NOVA and RbR Control 10 Minutes Polish Look-Ahead and Pilot Wafers 30 Minutes Clean 5 Minutes Measure Calculate Polish Time Polish Lot Clean Measure 30 Minutes 90 Minutes 10 Minutes (2 Wafers) Total Time (Best Case): 2 Hours 55 Minutes
23 CMP With NOVA and RbR Control 12 Minutes Polish Look-Ahead NOVA and Pilot Wafers Measure Calculate Polish Time Polish Lot NOVA Measure 90 Minutes Clean 30 Minutes Total Time (Simplest Case): 2 Hours 6 Minutes 25% Improvement
24 CMP Without NOVA and RbR Control 10 Minutes Polish Look-Ahead and Pilot Wafers Polish Lot 90 Minutes Rework Lot 2/24 Wafers 10/45 Minutes 30 Minutes Clean Calculate Polish Time Clean 30 Minutes Calculate Polish Time Clean 30 Minutes 5 Minutes Measure 10 Minutes Measure Measure 10 Minutes Total Time (2 Wafer Rework): 3 Hours 45 Minutes Total Time (24 Wafer Rework): 4 Hours 20 Minutes
25 CMP With NOVA and RbR Control Polish Look-Ahead NOVA and Pilot Wafers Measure 12 Minutes Calculate Polish Time Polish Lot NOVA Measure 90 Minutes Calculate Polish Time Rework Lot 2/24 Wafers 10/45 Minutes Clean 30 Minutes Total Time (2 Wafer Rework): 2 Hours 22 Minutes (37%) Total Time (24 Wafer Rework): 2 Hours 55 Minutes (32%)
26 Throughput, COO, and Waste Savings Throughput increases of up to 37%. Water and peroxide savings of up to 66%. Reduced Cost Of Ownership (COO) due to throughput of up to 31%. Reduced COO for future facilitation of up to 66% Reduced COO due to less ex-situ metrology tools.
27 COO Savings Due to Improved Quality Oxide Deposited Necessary Oxide Removal Final Oxide Window Oxide Deposited = Removal + Window Better process control means a smaller window A smaller window means less deposited oxide Less deposition Higher deposition throughput Less chemical usage Less waste from chamber cleans
28 Current Conclusions The precision, repeatability, and reliability of the NOVA are very good. Nova and UV1280 correlate within ~30 Ang. Simple EWMA control of patterned wafers using the NOVA results in an average thickness error of 96 Angs. This control is a 70% improvement of fixed-time polishing, and a 23% improvement over control using blanket pilots and sheet film equivalents % increase in throughput. Reduced Cost Of Ownership Less cleaning, higher throughput, fewer ex-situ metrology tools, and improved process control
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