OptiMOS -3 Small-Signal-Transistor

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1 BSS66N OptiMOS -3 Small-Signal-Transistor Features N-channel Enhancement mode Logic level (.5V rated) Avalanche rated Product Summary V DS 6 V R DS(on),max V GS = V 6 mw V GS =.5 V 9 I D 3. A Qualified according to AEC Q %lead-free; Halogen-free; RoHS compliant PG-SOT-89 3 Type Package Tape and Reel Information Marking Halogen-free Package BSS66N PG-SOT-89 H637: 3 pcs/ reel KE Yes Non-dry Maximum ratings, at T j =5 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T A =5 C 3. A T A =7 C.6 Pulsed drain current I D,pulse T A =5 C.8 Avalanche energy, single pulse E AS I D =3. A, R GS =5 W mj Reverse diode dv /dt dv /dt I D =3. A, V DS =8 V, di /dt = A/µs, T j,max =5 C 6 kv/µs Gate source voltage V GS ± V Power dissipation ) P tot T A =5 C. W Operating and storage temperature T j, T stg C ESD Class JESD-A -HBM class (< 5V) Soldering Temperature 6 C IEC climatic category; DIN IEC 68-55/5/56 ) Value refers to minimum footprint Rev. page 3--3

2 BSS66N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc - - K/W SMD version, device on PCB R thja minimal footprint cm cooling area ) Electrical characteristics, at T j =5 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =5 µa V Gate threshold voltage V GS(th) V DS = V, I D =5 µa Drain-source leakage current I DSS V DS =6 V, V GS = V, T j =5 C V DS =6 V, V GS = V, T j =5 C - - ma - - Gate-source leakage current I GSS V GS = V, V DS = V - - na Drain-source on-state resistance R DS(on) V GS =.5 V, I D =.6 A mw V GS = V, I D =3. A Transconductance g fs V DS > I D R DS(on)max, I D =.6 A S ) Performed on mmxmmx.5mm epoxy FR PCB with 6cm (one layer, 7μm thick) copper area for drain connectio. PCB is vertical without blown air. Rev. page 3--3

3 BSS66N Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss pf Output capacitance C oss V GS = V, V DS =5 V, f = MHz Reverse transfer capacitance C rss Turn-on delay time t d(on) ns Rise time t r V DD =3 V, V GS = V, Turn-off delay time t d(off) I D =3. A, R G,ext =6 W Fall time t f -. - Gate Charge Characteristics Gate to source charge Q gs -.6. nc Gate to drain charge Q gd V DD =8 V, I D =3. A, -.. Gate charge total Q g V GS = to 5 V Gate plateau voltage V plateau V Reverse Diode Diode continous forward current I S T A =5 C A Diode pulse current I S,pulse Diode forward voltage V SD V GS = V, I F =3. A, T j =5 C -.8. V Reverse recovery time t rr V R =3 V, I F =3. A, - - ns Reverse recovery charge Q rr di F /dt = A/µs - - nc Rev. page

4 I D [A] Z thja [K/W] P tot [W] I D [A] BSS66N Power dissipation Drain current P tot =f(t A ) I D =f(t A ); V GS V T A [ C] T A [ C] 3 Safe operating area Max. transient thermal impedance I D =f(v DS ); T A =5 C; D = Z thja =f(t p ) parameter: t p parameter: D =t p /T 3 µs µs µs.5 ms ms.. DC single pulse - - V DS [V] t p [s] Rev. page 3--3

5 I D [A] g fs [S] I D [A] R DS(on) [mw] BSS66N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =5 C R DS(on) =f(i D ); T j =5 C parameter: V GS parameter: V GS 9 V.5 V V 5 3 V 3.3 V V 7 6 V 3.5 V 5.5 V 3.3 V 3 5 V 3 V.8 V V DS [V] I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS > I D R DS(on)max g fs =f(i D ); T j =5 C C 5 C V GS [V] I D [A] Rev. page

6 C [pf] I F [A] R DS(on) [mw] V GS(th) [V] BSS66N 9 Drain-source on-state resistance Typ. gate threshold voltage R DS(on) =f(t j ); I D =3. A; V GS = V V GS(th) =f(t j ); V DS =V GS ; I D =5 µa parameter: I D.8. 8 max max.6 typ 6 typ. min T j [ C] T j [ C] Typ. capacitances Forward characteristics of reverse diode C =f(v DS ); V GS = V; f = MHz; T j =5 C I F =f(v SD ) parameter: T j 3 Ciss 5 C Coss 5 C - 5 C, 98% - 5 C, 98% Crss V DS [V] V SD [V] Rev. page

7 V BR(DSS) [V] I AV [A] V GS [V] BSS66N 3 Avalanche characteristics Typ. gate charge I AS =f(t AV ); R GS =5 W parameter: T j(start) V GS =f(q gate ); I D =3. A pulsed parameter: V DD C C 5 V 3 V 8 V 5 C t AV [µs] 3 5 Q gate [nc] 5 Drain-source breakdown voltage 6 Gate charge waveforms V BR(DSS) =f(t j ); I D =5 µa V GS Q g V gs(th) Q g(th) Q sw Q gate T j [ C] Q gs Q gd Rev. page

8 BSS66N SOT-89 Package Outline: Footprint: Packaging: Dimensions in mm Rev. page

9 BSS66N Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. page

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