SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

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1 Applications l Reset Switch for Active Clamp Reset C-C converters SMPS MOSFET P IRF626 HEXFET Power MOSFET V SS R S(on) max I -50V GS =-0V -2.2A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify esign (See App. Note AN00) l Fully Characterized Avalanche Voltage and Current S S S G Top View A SO-8 Absolute Maximum Ratings Parameter Max. Units T A = 25 C Continuous rain Current, V 0V -2.2 T A = 70 C Continuous rain Current, V 0V -.9 A I M Pulsed rain Current -9 A = 25 C Power issipation 2.5 W Linear erating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak iode Recovery dv/dt 7.8 V/ns T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for 0 seconds 300 (.6mm from case ) C Thermal Resistance Symbol Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 R θja Junction-to-Ambient 50 C/W Notes through are on page 8 02/2/02

2 IRF626 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -50 V V GS = 0V, I = -250µA V (BR)SS/ T J Breakdown Voltage Temp. Coefficient -0.7 V/ C Reference to 25 C, I = -ma ƒ R S(on) Static rain-to-source On-Resistance Ω V GS = -0V, I = -.3A ƒ V GS(th) Gate Threshold Voltage V V S = V GS, I = -250µA I SS rain-to-source Leakage Current -25 V S = -50V, V GS = 0V µa -250 V S = -20V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage -00 V GS = -20V na Gate-to-Source Reverse Leakage 00 V GS = 20V T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 2.7 S V S = -50V, I = -.3A Q g Total Gate Charge I = -.3A Q gs Gate-to-Source Charge 7.2 nc V S = -20V Q gd Gate-to-rain ("Miller") Charge 5 23 V GS = -0V, t d(on) Turn-On elay Time 8 V = -75V t r Rise Time 5 ns I = -.3A t d(off) Turn-Off elay Time 33 R G = 6.5Ω t f Fall Time 26 V GS = -0V ƒ C iss Input Capacitance 280 V GS = 0V C oss Output Capacitance 220 V S = -25V C rss Reverse Transfer Capacitance 53 pf ƒ =.0MHz C oss Output Capacitance 290 V GS = 0V, V S = -.0V, ƒ =.0MHz C oss Output Capacitance 99 V GS = 0V, V S = -20V, ƒ =.0MHz C oss eff. Effective Output Capacitance 220 V GS = 0V, V S = 0V to -20V Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 200 mj I AR Avalanche Current -4.0 A iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.2 (Body iode) showing the A I SM Pulsed Source Current integral reverse G -9 (Body iode) p-n junction diode. V S iode Forward Voltage -.6 V T J = 25 C, I S = -.3A, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = -.3A Q rr Reverse RecoveryCharge nc di/dt = -00A/µs ƒ 2 S

3 -5.0V IRF TOP BOTTOM VGS -5V -2V -0V -8.0V -7.0V -I, rain-to-source Current (A) 00 0 TOP BOTTOM VGS -5V -2V -0V -8.0V -7.0V -6.0V -5.5V -5.0V 20µs PULSE WITH T J = 25 C µs PULSE WITH T J = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I = -2.2A T J = 25 C 2.0 -I, rain-to-source Current (A) 0 T = 50 J C V S= -50V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) V GS = -0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 -I, rain-to-source Current (A) C, Capacitance(pF) IRF V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd Ciss Coss Crss -V GS, Gate-to-Source Voltage (V) I = -.3A V S = -20V V S = -75V V S = -30V V S, rain-to-source Voltage (V) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITE BY R S (on) -I S, Reverse rain Current (A) 0 T = 50 J C T = 25 J C V GS= 0 V V S,Source-to-rain Voltage (V) 0 0. Tc = 25 C Tj = 50 C Single Pulse 00µsec msec 0msec V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 IRF V S R -I, rain Current (A) T, Case Temperature ( C C) Fig 9. Maximum rain Current Vs. Ambient Temperature R G Fig 0a. Switching Time Test Circuit V S 90% V GS V GS Pulse Width µs uty Factor 0. %.U.T. 0% V GS t d(on) t r t d(off) t f + - V Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thja ) 0 = SINGLE PULSE (THERMAL RESPONSE) 2. Peak T J = P M x Z thja + T A t, Rectangular Pulse uration (sec) Notes:. uty factor = t / t 2 P M t t 2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 R S (on), rain-to-source On Resistance (Ω) IRF R S(on), rain-to -Source On Resistance ( Ω).00 V GS = -0V I = -2.2A V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance Vs. rain Current Fig 3. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 50KΩ -V GS Q G 2V.2µF.3µF Q GS Q G 500 I V GS -3mA.U.T. - + V S V G Charge 400 TOP BOTTOM -.8A -3.2A -4.0A I AS I G I Current Sampling Resistors Fig 4a&b. Basic Gate Charge Test Circuit and Waveform tp V (BR)SS R G V S -20V tp IAS L.U.T 0.0Ω RIVER 5V V A E AS, Single Pulse Avalanche Energy (mj) Starting Tj, Junction Temperature ( C) Fig 5a&b. Unclamped Inductive Test circuit Fig 5c. Maximum Avalanche Energy and Waveforms Vs. rain Current 6

7 IRF626 SO-8 Package etails 5 E - A - - C - e 6X - B e B 8X A 0.25 (.00) M C A S B S A H 0.25 (.00) M A M 0.0 (.004) θ L 8X K x 45 NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y4.5M C O NTR O LLIN G IM E NS IO N : IN CH. 3. IMENSIONS ARE SHOW N IN MILLIMETERS (INCHES). 4. O U TLIN E C O N FO R M S TO JE EC O U TLIN E M S-02A A. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS M O L PR O TRU S IO N S N O T TO E XC EE 0.25 (.006). 6 IM EN SIO N S IS TH E LEN G TH O F LE A FO R S O L ER IN G TO A S UB S TR A TE.. θ 6 C 8X IM INC HES MILLIMETER S MIN M AX MIN MAX A A B C E e.050 BASIC.27 BASIC e.025 BASIC BASIC H K L θ RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ).27 (.050 ) 3X.78 (.070) 8X SO-8 Part Marking 7

8 IRF626 SO-8 Tape and Reel TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. ALL IMENSIONS ARE SHOW N IN MILLIMETERS(INC HES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 25mH R G = 25Ω, I AS = -4.0A. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) ƒ Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board. ata and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information.02/02 8

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