5SDF 08F4505 Old part no. DM

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1 Fast Recovery Diode Properties 5SDF 8F455 Old part no. DM Key Parameters Optimized recovery characteristics V RRM = 4 5 V Industry standard housing I FAVm = 767 A I FSM = 15 A Applications V TO = 1.87 V suited for GTO applications r T =.735 m Snubber diode Freewheeling diode Types 5SDF 8F455 Conditions: V RRM 4 5 V T j = C, half sine waveform, f = 5 Hz Mechanical Data F m Mounting force 22 ± 2 kn m Weight.49 kg D S Surface creepage distance 33 mm D a Air strike distance 2 mm Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, Praha 4, Czech Republic tel.: , TS - DM/21/6a Aug-11 1 of 1

2 Maximum Ratings Maximum Limits Unit V RRM I FAVm I FRMS I RRM I FSM I 2 t Repetitive peak reverse voltage T j = C Average forward current T c = 85 C RMS forward current T c = 85 C Repetitive reverse current V R = V RRM Non repetitive peak surge current V R = V, half sine pulse Limiting load integral V R = V, half sine pulse 4 5 V 767 A 1 25 A 5 ma t p = 8.3 ms 16 A t p = 1 ms 15 A t p = 8.3 ms 1 66 A 2 s t p = 1 ms A 2 s T jmin -T jmax Operating temperature range C T STG Storage temperature range C Unless otherwise specified T j = 125 C TS - DM/21/6a Aug-11 2 of 1

3 Characteristics Value Unit min typ max V T Threshold voltage 1.87 V r T V FM Q rr I rrm t rr S I rrm Forward slope resistance I F1 = A, I F2 = 3 77 A Maximum forward voltage I FM = 2 A Recovered charge V R = 1 V, I FM = 1 A, di/dt = -8 A/µs Reverse recovery maximum current the same conditions as at Q rr Reverse recovery time the same conditions as at Q rr Soft factor, S = t s / t f I FM = 1 A, di F /dt = -2 A/µs, V R = 4 V Reverse recovery maximum current the same conditions as at S.735 m 3.31 V 5 7 µc A 5. µs A V rrm Reverse recovery maximum voltage the same conditions as at S Unless otherwise specified T j = 125 C 1 1 V TS - DM/21/6a Aug-11 3 of 1

4 Thermal Parameters Value Unit R thjc R thch Thermal resistance junction to case Thermal resistance case to heatsink double side cooling 15 K/kW anode side cooling 24 cathode side cooling 4 double side cooling 4 K/kW single side cooling 8 Transient Thermal Impedance Analytical function for transient thermal impedance Z thjc 5 i 1 R (1 exp( t / )) Conditions: F m = 22 ± 2 kn, Double side cooled i Correction for periodic waveforms 18 sine: 1.3 K/kW 18 rectangular: 1.7 K/kW 12 rectangular: 2.9 K/kW 6 rectangular: 4.8 K/kW i i i ( s ) R i ( K/kW ) Transient thermal impedance junction to case Z thjc ( K/kW ) Square wave pulse duration t d ( s ) Fig. 2 Dependence transient thermal impedance junction to case on square pulse TS - DM/21/6a Aug-11 4 of 1

5 Forward Characteristics 6 I F ( A ) 5 T j = 125 C V F ( V ) Fig. 3 Maximum forward voltage drop characteristics TS - DM/21/6a Aug-11 5 of 1

6 Surge Characteristics I FSM ( ka ) i 2 dt (1 6 A 2 s) I FSM ( ka ) V R = V i 2 dt I FSM 4 V R.5 V RRM t ( ms ) 1 Fig. 4 Surge forward current vs. pulse length, half sine wave, single pulse, V R = V, T j = T jmax Number n of cycles at 5 Hz Fig. 5 Surge forward current vs. number of pulses, half sine wave, T j = T jmax TS - DM/21/6a Aug-11 6 of 1

7 Power Loss and Maximum Case Temperature Characteristics P T ( W ) 25 = DC P T ( W ) 25 = DC I FAV ( A ) Fig. 6 Forward power loss vs. average forward current, sine waveform, f = 5 Hz, T = 1/f I FAV ( A ) Fig. 7 Forward power loss vs. average forward current, square waveform, f = 5 Hz, T = 1/f T C ( C ) T C ( C ) DC 9 DC = I FAV ( A ) Fig. 8 Max. case temperature vs. aver. forward current, sine waveform, f = 5 Hz, T = 1/f 7 = I FAV ( A ) Fig. 9 Max. case temperature vs. aver. forward current, square waveform, f = 5 Hz, T = 1/f Note 2: Figures number 6 9 have been calculated without considering any forward and reverse recovery losses. They are valid for f = 5 or 6 Hz operation. TS - DM/21/6a Aug-11 7 of 1

8 Forward Recovery Characteristics 2 vf (t), if (t) di F /dt i F (t) 1 V fr ( V ) 15 1 V fr 5 t fr v F (t) 1 3 t di F /dt ( A/µs ) Fig. 1 Typical forward recovery voltage waveform when the diode is turned on with high di F /dt Fig. 11 Max. forward recovery voltage vs. rate of rise of forward current, trapezoid pulse, T j = T jmax, t fr 1 µs TS - DM/21/6a Aug-11 8 of 1

9 Reverse Recovery Characteristics vf (t), if (t) I FM i F (t) - di F /dt t rr Qrr ( µc ) 1 -di F /dt = 4 A/µs 2 A/µs 1 A/µs v F (t) t s t f 1 8 A/µs 5 Q rr.25 I rrm I rrm.9 I rrm V R V rrm 1-1 t I FM ( A ) Fig. 12 Typical waveforms and definition of symbols at reverse recovery of a diode, inductive switching without RC snubber Fig. 13 Max. recovered charge vs. forward current, trapezoid pulse, T j = T jmax Qrr ( µc ) 1 IrrM ( A ) 1 I FM = 2 A 1 A 5 A I FM = 2 A 1 A 1 5 A di F /dt ( A/µs ) Fig. 14 Max. recovered charge vs. rate of fall of forward current, trapezoid pulse, T j = T jmax di F /dt ( A/µs ) Fig. 15 Max. reverse recovery current vs. rate of fall of forward current, trapezoid pulse, T j = T jmax TS - DM/21/6a Aug-11 9 of 1

10 Notes: TS - DM/21/6a Aug-11 1 of 1

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