G 1. Micro3. 1

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1 P 9260F IRLML53 HEXFET Power MOSFET Generation V Technoogy Utra Low OnResistance PChanne MOSFET SOT23 Footprint Low Profie (<.mm) vaiabe in Tape and Ree Fast Switching G S 2 3 V SS = 30V R S(on) = 0.60Ω escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. customized eadframe has been incorporated into the standard SOT23 package to produce a HEXFET Power MOSFET with the industry's smaest footprint. This package, dubbed the Micro3, is idea for appications where printed circuit board space is at a premium. The ow profie (<.mm) of the Micro3 aows it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCI cards. Micro3 bsoute Maximum Ratings Parameter Max. Units T = 25 C Continuous rain Current, V V 0.76 T = 70 C Continuous rain Current, V V 0.6 I M Pused rain Current 4.8 = 25 C Power issipation 540 mw Linear erating Factor 4.3 mw/ C V GS GatetoSource Votage ± 20 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range 55 to 50 C Therma Resistance Parameter Typ. Max. Units R θj Maximum Junctiontombient 230 C/W 2/4/

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Votage 30 V V GS = 0V, I = 250µ ΔV (BR)SS/ΔT J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I = m R S(ON) Static raintosource OnResistance 0.60 V GS = V, I = 0.60 ƒ Ω.0 V GS = 4.5V, I = 0.30 ƒ V GS(th) Gate Threshod Votage.0 V V S = V GS, I = 250µ g fs Forward Transconductance 0.44 S V S = V, I = 0.30 I SS raintosource Leakage Current.0 V S = 24V, V GS = 0V µ 25 V S = 24V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage 0 V GS = 20V n GatetoSource Reverse Leakage 0 V GS = 20V Q g Tota Gate Charge I = 0.60 Q gs GatetoSource Charge nc V S = 24V Q gd Gatetorain ("Mier") Charge..7 V GS = V, See Fig. 6 and 9 ƒ t d(on) TurnOn eay Time V = 5V t r Rise Time 8.2 I = 0.60 ns t d(off) TurnOff eay Time 23 R G = 6.2Ω t f Fa Time 6 R = 25Ω, See Fig. ƒ C iss Input Capacitance 75 V GS = 0V C oss Output Capacitance 37 pf V S = 25V C rss Reverse Transfer Capacitance 8 ƒ =.0MHz, See Fig. 5 Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 0.54 (Body iode) showing the I SM Pused Source Current integra reverse 4.8 (Body iode) pn junction diode. V S iode Forward Votage.2 V T J = 25 C, I S = 0.60, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 0.60 Q rr Reverse RecoveryCharge nc di/dt = 0/µs ƒ G S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) I S 0.60, di/dt /µs, V V (BR)SS, T J 50 C ƒ Puse width 300µs; duty cyce 2%. Surface mounted on FR4 board, t 5sec. 2

3 I, raintosource Current () VGS TOP 5V V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V I, raintosource Current () VGS TOP 5V V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 20μs PULSE WITH T J = 25 C V S, raintosource Votage (V) 20μs PULSE WITH T J = 50 C V S, raintosource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, raintosource Current () GS T J = 25 C T = 50 C J V S = V 20μs PULSE WITH V, GatetoSource Votage (V) R S(on), raintosource On Resistance (Normaized) I = 0.60 V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature 3

4 C, Capacitance (pf) 40 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE 20 C rss = Cgd C iss C oss = C ds Cgd 0 C oss Crss V S, raintosource Votage (V) V GS, GatetoSource Votage (V) I = 0.60 V S = 24V V S = 5V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. raintosource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I S, Reverse rain Current () T J = 50 C T J = 25 C I, rain Current () OPERTION IN THIS RE LIMITE BY R S(on) 0μs ms V GS = 0V V S, Sourcetorain Votage (V) T = 25 C ms T J = 50 C Singe Puse 0 V, raintosource Votage (V) S Fig 7. Typica Sourcerain iode Forward Votage Fig 8. Maximum Safe Operating rea 4

5 Q G V S R V Q GS Q G R G V GS.U.T. V V G V Charge Puse Width µs uty Factor % Fig 9a. Basic Gate Charge Waveform Fig a. Switching Time Test Circuit Current Reguator Same Type as.u.t. 2V.2μF 50KΩ.3μF V S 90%.U.T. V S V GS 3m % V GS t d(on) t r t d(off) t f I G I Current Samping Resistors Fig 9b. Gate Charge Test Circuit Fig b. Switching Time Waveforms 00 Therma Response (Z thj ) 0 = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj T t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junctiontombient 5

6 Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer ** V GS * R G dv/dt controed by R G I S controed by uty Factor "".U.T. evice Under Test * V * Reverse Poarity for PChanne ** Use PChanne river for PChanne Measurements river Gate rive Period P.W. = P.W. Period [ V GS =V ] ***.U.T. I S Waveform Reverse Recovery Current Reppied Votage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Rippe 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Leve and 3V rive evices Fig 3. For PChanne HEXFETS 6

7 Micro3 (SOT23) (LeadFree) Package Outine imensions are shown in miimeters (inches) B E e X e b 0.20 [0.008] 0 [0.004] C M C C B 5 E 5 [0.006] M C B H 4 L 3X L 7 L2 c IMENSIONS SYMBOL MILLIMETERS INCHES MIN MX MIN MX b c E E e 0.95 BSC %6& e.90 BSC %6& L L 0.54 REF REF L BSC BSC Recommended Footprint NOTES: IMENSIONING & TOLERNCING PER NSI Y4.5M IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING IMENSION: MILLIMETER. 4. TUM PLNE H IS LOCTE T THE MOL PRTING LINE. 5. TUM N B TO BE ETERMINE T TUM PLNE H. 6. IMENSIONS N E RE MESURE T TUM PLNE H. IMENSIONS OES NOT INCLUE MOL PROTRUSIONS OR INTERLE FLSH. MOL PROTRUSIONS OR INTERLE FLSH SHLL NOT EXCEE 0.25 MM [0.0 INCH] PER SIE. 7. IMENSION L IS THE LE LENGTH FOR SOLERING TO SUBSTRTE. 8. OUTLINE CONFORMS TO JEEC OUTLINE TO236 B. Micro3 (SOT23 / TO236B) Part Marking Information Micro3 / SOT23 Package Marking PRT NUMBER HLOGEN FREE INICTOR YW LC Y = YER W = WEEK LOT COE PRT NUMBER COE REFERENCE: = IRLML2402 B =IRLML2803 C = IRLML2402 = IRLML53 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 Note: ine above the work week (as shown here) indicates Leadfree W = (26) IF PRECEE BY LST IGIT OF CLENR YER YER Y WOR K WE EK W 0 02 B 03 C X Y Z W = (2752) IF PRECEE BY LETTER WOR K YER Y WE EK W B 28 B 2003 C 29 C E 2006 F 2007 G 2008 H 2009 J 20 K 50 X 5 Y 52 Z Note: For the most current drawing pease refer to IR website at 7

8 Tape & Ree Information SOT23 imensions are shown in miimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEE IRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) ( ) MX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI54. ata and specifications subject to change without notice. IR WORL HEQURTERS: N.Sepuveda Bvd, E Segundo, Caifornia 90245, US Te: (3) TC Fax: (3) Visit us at for saes contact information. 2/20 8