SMD General Purpose Transistor (NPN) BC846/BC847/BC848. Features. Mechanical Data. Marking Information

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1 SMD General Purpose Transistor (NPN) SMD General Purpose Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package SOT-23 Terminals: Solderable per MIL-STD-202G, Method 208 Weight: gram Marking Information BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C Marking Code 1A 1B 1E 1F 1G 1J 1K 1L Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description BC846 BC847 BC848 Unit Conditions VCBO Collector-Base Voltage V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage V IC Collector Current 100 ma Ptot Power Dissipation 330 mw Note 1 RθJA Thermal Resistance, Junction to Ambient 375 C/W Note 1 TJ Junction Temperature -55 to +150 C TSTG Storage Temperature Range -55 to +150 C Note: 1. Transistor mounted on FR-4 board 8cm 2. TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800) (661) Fax: (800)-TAITFA (800) (661) Page 1 of 8

2 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Typ. Max. Unit Conditions ICBO Collector-Base Cut-off Current na VCB=30V, IE= µa BC846/7/8, Suffix A VCB=30V, IE=0, TJ=150 C BC846/7/8, Suffix B VCE=5V, IC=10µA hfe D.C. Current Gain BC847/8, Suffix C BC846/7/8, Suffix A BC846/7/8, Suffix B VCE=5V, IC=2mA BC847/8, Suffix C VCE(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA V IC=100mA, IB=5mA VBE(sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.5mA V IC=100mA, IB=5mA VBE(on) Base-Emitter On Voltage VCE=5V, IC=2mA V VCE=5V, IC=10mA ft Current Gain-Bandwidth Product MHz Cob Collector Output Capacitance pf NF Noise Figure db VCE=5V, IC=10mA, f=100mhz VCB=10V, IE=0, f=1mhz VCE=5V, IC=0.2mA, RG=2KΩ, f=1khz Page 2 of 8

3 Typical Characteristics Curves 1. BC846A, BC847A, BC848A Fig.1-Collector Cut-off Current vs. Junction Temperature Fig.2- DC Current Gain Collector Cut-off Current (na) DC Current Gain Junction Temperature ( C) Base-Emitter On Voltage (mv) Fig.3-Base-Emitter On Voltage Collector-Emitter Saturation Voltage (mv) Fig.4- Collector-Emitter Saturation Voltage Page 3 of 8

4 Base-Emitter Saturation Voltage (mv) Fig.5- Base-Emitter Saturation Voltage Capacitance (pf) Fig.6- Typical Capacitances vs. Reverse Voltage Reverse Voltage (V) 2. BC846B, BC847B, BC848B Fig.1-Collector Cut-off Current vs. Junction Temperature Fig.2- DC Current Gain Collector Cut-off Current (na) DC Current Gain Junction Temperature ( C) Page 4 of 8

5 Base-Emitter On Voltage (mv) Fig.3-Base-Emitter On Voltage Collector-Emitter Saturation Voltage (mv) Fig.4- Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (mv) Fig.5- Base-Emitter Saturation Voltage Capacitance (pf) Fig.6- Typical Capacitances vs. Reverse Voltage Reverse Voltage (V) Page 5 of 8

6 3. BC847C, BC848C Fig.1-Collector Cut-off Current vs. Junction Temperature Fig.2- DC Current Gain Collector Cut-off Current (na) DC Current Gain Junction Temperature ( C) Base-Emitter On Voltage (mv) Fig.3-Base-Emitter On Voltage Collector-Emitter Saturation Voltage (mv) Fig.4- Collector-Emitter Saturation Voltage v Page 6 of 8

7 Base-Emitter Saturation Voltage (mv) Fig.5- Base-Emitter Saturation Voltage Capacitance (pf) Fig.6- Typical Capacitances vs. Reverse Voltage Reverse Voltage (V) Dimensions in mm SOT-23 Page 7 of 8

8 How to contact us: US HEADQUARTERS WEST HARRISON PARKWAY, VALENCIA, CA Tel: (800) TAITRON (800) (661) Fax: (800) TAITFAX (800) (661) TAITRON COMPONENTS MEXICO, S.A.DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P MEXICO Tel: Fax: TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP BRAZIL Tel: Fax: TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN AN ROAD, SUITE 1503, SHANGHAI, , CHINA Tel: Fax: Page 8 of 8

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