ACS723 High Accuracy, Galvanically Isolated Current Sensor IC With Small Footprint SOIC8 Package

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1 FEATURES AND BENEFTS Patented integrated digital temperature compensation circuitry allows for near closed loop accuracy over temperature in an open loop sensor UL695- (ed. ) certified Dielectric Strength Voltage =.4 kvrms Basic solation Working Voltage = 4 Vpk/97 Vrms ndustry-leading noise performance with greatly improved bandwidth through proprietary amplifier and filter design techniques Pin-selectable band width: 8 khz for high bandwidth applications or khz for low noise performance.65 mω primary conductor resistance for low power loss and high inrush current withstand capability Small footprint, low-profile SOC8 package suitable for space-constrained applications ntegrated shield virtually eliminates capacitive coupling from current conductor to die, greatly suppressing output noise due to high dv/dt transients 4.5 to 5.5 V, single supply operation Output voltage proportional to AC or DC current Factory-trimmed sensitivity and quiescent output voltage Continued on the next page Package: 8-pin SOC (suff ix LC) DESCRPTON The Allegro ACS73 current sensor C is an economical and precise solution for AC or DC current sensing in industrial, commercial, and communications systems. The small package is ideal for space constrained applications while also saving costs due to reduced board area. Typical applications include motor control, load detection and management, switched-mode power supplies, and overcurrent fault protection. The device consists of a precise, low-offset, linear Hall sensor circuit with a copper conduction path located near the surface of the die. Applied current flowing through this copper conduction path generates a magnetic field which is sensed by the integrated Hall C and converted into a proportional voltage. Device accuracy is optimized through the close proximity of the magnetic field to the Hall transducer. A precise, proportional voltage is provided by the low-offset, chopper-stabilized BiCMOS Hall C, which includes Allegro s patented digital temperature compensation, resulting in extremely accurate performance over temperature. The output of the device has a positive slope when an increasing current flows through the primary copper conduction path (from pins and, to pins 3 and 4), which is the path used for current sensing. The internal resistance of this conductive path is.65 mω typical, providing low power loss. The terminals of the conductive path are electrically isolated from the sensor leads (pins 5 through 8). This allows the ACS73 current sensor C to be used in high-side current sense applications without the use of high-side differential amplifiers or other costly isolation techniques. Approximate Scale : Continued on the next page + P P P 3 4 P+ P+ P P ACS73 VCC VOUT BW_SEL GND C L C BYPASS. µf The ACS73 outputs an analog signal, V OUT, that changes, proportionally, with the bidirectional AC or DC primary sensed current, P, within the specified measurement range. The BW_SEL pin can be used to select one of the two bandwidths to optimize the noise performance. Grounding the BW_SEL pin puts the part in the high bandwidth, 8 khz, mode. Typical Application ACS73-DS, Rev.

2 Features and Benefits (continued) for improved accuracy Chopper stabilization results in extremely stable quiescent output voltage Nearly zero magnetic hysteresis Ratiometric output from supply voltage Selection Guide Part Number PR (A) ACS73LLCTR-5AB-T ±5 ACS73LLCTR-AU-T ACS73LLCTR-AB-T ± ACS73LLCTR-AU-T ACS73LLCTR-AB-T ± ACS73LLCTR-4AU-T 4 Sens(Typ) at V CC = 5. V (mv/a) 4 ACS73LLCTR-4AB-T ±4 5 Contact Allegro for additional packing options. Variant not intended for automotive applications. T A ( C) Description (continued) The ACS73 is provided in a small, low profile surface mount SOC8 package. The leadframe is plated with % matte tin, which is compatible with standard lead (Pb) free printed circuit board assembly processes. nternally, the device is Pb-free, except for flip-chip high-temperature Pb-based solder balls, currently exempt from RoHS. The device is fully calibrated prior to shipment from the factory. Packing -4 to 5 Tape and Reel, 3 pieces per reel Worcester, Massachusetts U.S.A ;

3 SPECFCATONS Absolute Maximum Ratings Characteristic Symbol Notes Rating Units Supply Voltage V CC 6 V Reverse Supply Voltage V RCC. V Output Voltage V OUT 5 V Reverse Output Voltage V ROUT. V Operating Ambient Temperature T A Range L 4 to 5 C Junction Temperature T J (max) 65 C Storage Temperature T stg 65 to 65 C solation Characteristics Characteristic Symbol Notes Rating Unit Dielectric Strength Test Voltage V SO (edition. ). Production tested at VSO for second, in accordance 4 V RMS Agency type-tested for 6 seconds per UL 695- with UL 695- (edition. ). Working Voltage for Basic solation V WVB Maximum approved working voltage for basic (single) isolation according UL 695- (edition ). 4 V PK or VDC 97 V RMS Clearance D cl Minimum distance through air from P leads to signal leads. 3.9 mm Minimum distance along package body from P leads to signal Creepage D cr 3.9 mm leads. Thermal Characteristics Characteristic Symbol Test Conditions* Value Units Package Thermal Resistance (Junction to Ambient) Package Thermal Resistance (Junction to Lead) R θja *Additional thermal information available on the Allegro website. Mounted on the Allegro evaluation board with 4 mm of 4 oz. copper on each side, connected to pins and, and to pins 3 and 4, with thermal vias connecting the layers. Performance values include the power consumed by the PCB. 3 ºC/W R θjl Mounted on the Allegro ASEK 73 evaluation board. 5 ºC/W Worcester, Massachusetts U.S.A ; 3

4 VCC Master Current Supply To All Subcircuits POR Programming Control Hall Current Drive Temperature Sensor EEPROM and Control Logic P+ P+ Sensitivity Control Offset Control P Dynamic Offset Cancellation Tuned Filter VOUT P BW_SEL GND Functional Block Diagram Worcester, Massachusetts U.S.A ; 4

5 Pin-out Diagram and Terminal List P+ 8 VCC P+ 7 VOUT P 3 6 BW_SEL P 4 5 GND Pin-out Diagram Terminal List Table Number Name Description, P+ Terminals for current being sensed; fused internally 3, 4 P Terminals for current being sensed; fused internally 5 GND Signal ground terminal 6 BW_SEL Terminal for selecting khz or 8 khz bandwidth 7 VOUT Analog output signal 8 VCC Device power supply terminal Worcester, Massachusetts U.S.A ; 5

6 COMMON ELECTRCAL CHARACTERSTCS : Valid through the full range of T A = 4 C to 5 C, and at V CC = 5. V; unless otherwise specif ied Characteristic Symbol Test Conditions Min. Typ. Max. Units Supply Voltage V CC V Supply Current CC V CC within V CC (min) and V CC (max) 9 4 ma Output Capacitance Load C L VOUT to GND nf Output Resistive Load R L VOUT to GND 4.7 kω Primary Conductor Resistance R P T A = 5 C.65 mω Magnetic Coupling Factor C F G/A Rise Time Propagation Delay Response Time nternal Bandwidth t r t pd t RESPONSE BWi P = P (max), T A = 5 C, C L = nf, BW_SEL tied to GND P = P (max), T A = 5 C, C L = nf, BW_SEL tied to VCC P = P (max), T A = 5 C, C L = nf, BW_SEL tied to GND P = P (max), T A = 5 C, C L = nf, BW_SEL tied to VCC P = P (max), T A = 5 C, C L = nf, BW_SEL tied to GND P = P (max), T A = 5 C, C L = nf, BW_SEL tied to VCC Small signal 3 db; C L = nf, BW_SEL tied to GND Small signal 3 db; C L = nf, BW_SEL tied to VCC Noise Density ND nput referenced noise density; T A = 5 C, C L = nf 4 μs 7.5 μs μs 5 μs 5 μs.5 μs 8 khz khz nput referenced noise; BWi = 8 khz, 3 ma T A = 5 C, C L = nf (rms) Noise N nput referenced noise; BWi = khz, 5 ma T A = 5 C, C L = nf (rms) Nonlinearity E LN Through full range of PR ± % V Saturation Voltage OH R L = 4.7 kω, T A = 5 C V CC.5 V V OL R L = 4.7 kω, T A = 5 C.5 V Output reaches 9% of steady-state Power-On Time t PO 64 μs level, T A = 5 C, P = PR (max) applied Device may be operated at higher primary current levels, P, ambient temperatures, T A, and internal leadframe temperatures, provided the Maximum Junction Temperature, T J (max), is not exceeded. The sensor C will continue to respond to current beyond the range of P until the high or low saturation voltage; however, the nonlinearity in this region will be worse than through the rest of the measurement range. µa (rms) / Hz Worcester, Massachusetts U.S.A ; 6

7 xllctr-5ab PERFORMANCE CHARACTERSTCS: T A Range L, valid at T A = 4 C to 5 C, V CC = 5. V, unless otherwise specif ied Characteristic Symbol Test Conditions Min. Typ. Max. Units Nominal Performance Current Sensing Range PR 5 5 A Sensitivity Sens PR (min) < P < PR (max) 4 mv/a Zero Current Output Voltage V OUT(Q) Bidirectional; P = A V CC x.5 V Accuracy Performance T A = 5 C to 5 C; measured at P = PR (max) % Sensitivity Error E sens T A = 4 C to 5 C; ; measured at P = PR (max) ±.5 % Offset Voltage P = A; T A = 5 C to 5 C 5 5 mv V OE P = A; T A = -4 C to 5 C ± mv Total Output Error P = PR (max), T A = 5 C to 5 C.5.5 % E TOT P = PR (max), T A = 4 C to 5 C ±3 % Lifetime Drift Characteristics Sensitivity Error Lifetime Drift E sens_drift ± % Total Output Error Lifetime Drift E tot_drift ± % Offset Voltage does not incorporate any error due to external magnetic fields. See section: mpact of External Magnetic Fields. Percentage of P, with P = PR (max). Worcester, Massachusetts U.S.A ; 7

8 xllctr-au PERFORMANCE CHARACTERSTCS, T A Range L, valid at T A = 4 C to 5 C, V CC = 5. V, unless otherwise specif ied Characteristic Symbol Test Conditions Min. Typ. Max. Units Nominal Performance Current Sensing Range PR A Sensitivity Sens PR (min) < P < PR (max) 4 mv/a Zero Current Output Voltage V OUT(Q) Unidirectional; P = A V CC x. V Accuracy Performance T A = 5 C to 5 C; measured at P = PR (max) % Sensitivity Error E sens T A = 4 C to 5 C; ; measured at P = PR (max) ±.5 % Offset Voltage P = A; T A = 5 C to 5 C 5 5 mv V OE P = A; T A = -4 C to 5 C ± mv Total Output Error P = PR (max), T A = 5 C to 5 C.5.5 % E TOT P = PR (max), T A = 4 C to 5 C ±3 % Lifetime Drift Characteristics Sensitivity Error Lifetime Drift E sens_drift ± % Total Output Error Lifetime Drift E tot_drift ± % Offset Voltage does not incorporate any error due to external magnetic fields. See section: mpact of External Magnetic Fields. Percentage of P, with P = PR (max). xllctr-ab PERFORMANCE CHARACTERSTCS: T A Range L, valid at T A = 4 C to 5 C, V CC = 5. V, unless otherwise specif ied Characteristic Symbol Test Conditions Min. Typ. Max. Units Nominal Performance Current Sensing Range PR A Sensitivity Sens PR (min) < P < PR (max) mv/a Zero Current Output Voltage V OUT(Q) Bidirectional; P = A V CC x.5 V Accuracy Performance T A = 5 C to 5 C; measured at P = PR (max).5.5 % Sensitivity Error E sens T A = 4 C to 5 C; ; measured at P = PR (max) ± % Offset Voltage P = A; T A = 5 C to 5 C mv V OE P = A; T A = -4 C to 5 C ±5 mv Total Output Error P = PR (max), T A = 5 C to 5 C % E TOT P = PR (max), T A = 4 C to 5 C ±3 % Lifetime Drift Characteristics Sensitivity Error Lifetime Drift E sens_drift ± % Total Output Error Lifetime Drift E tot_drift ± % Offset Voltage does not incorporate any error due to external magnetic fields. See section: mpact of External Magnetic Fields. Percentage of P, with P = PR (max). Worcester, Massachusetts U.S.A ; 8

9 xllctr-au PERFORMANCE CHARACTERSTCS: T A Range L, valid at T A = 4 C to 5 C, V CC = 5. V, unless otherwise specif ied Characteristic Symbol Test Conditions Min. Typ. Max. Units Nominal Performance Current Sensing Range PR A Sensitivity Sens PR (min) < P < PR (max) mv/a Zero Current Output Voltage V OUT(Q) Unidirectional; P = A V CC x. V Accuracy Performance T A = 5 C to 5 C; measured at P = PR (max).5.5 % Sensitivity Error E sens T A = 4 C to 5 C; ; measured at P = PR (max) ± % Offset Voltage P = A; T A = 5 C to 5 C mv V OE P = A; T A = -4 C to 5 C ±5 mv Total Output Error P = PR (max), T A = 5 C to 5 C % E TOT P = PR (max), T A = 4 C to 5 C ±3 % Lifetime Drift Characteristics Sensitivity Error Lifetime Drift E sens_drift ± % Total Output Error Lifetime Drift E tot_drift ± % Offset Voltage does not incorporate any error due to external magnetic fields. See section: mpact of External Magnetic Fields. Percentage of P, with P = PR (max). xllctr-ab PERFORMANCE CHARACTERSTCS: T A Range L, valid at T A = 4 C to 5 C, V CC = 5. V, unless otherwise specif ied Characteristic Symbol Test Conditions Min. Typ. Max. Units Nominal Performance Current Sensing Range PR A Sensitivity Sens PR (min) < P < PR (max) mv/a Zero Current Output Voltage V OUT(Q) Bidirectional; P = A V CC x.5 V Accuracy Performance T A = 5 C to 5 C; measured at P = PR (max).5.5 % Sensitivity Error E sens T A = 4 C to 5 C; ; measured at P = PR (max) ± % Offset Voltage P = A; T A = 5 C to 5 C mv V OE P = A; T A = -4 C to 5 C ±5 mv Total Output Error P = PR (max), T A = 5 C to 5 C % E TOT P = PR (max), T A = 4 C to 5 C ±3 % Lifetime Drift Characteristics Sensitivity Error Lifetime Drift E sens_drift ± % Total Output Error Lifetime Drift E tot_drift ± % Offset Voltage does not incorporate any error due to external magnetic fields. See section: mpact of External Magnetic Fields. Percentage of P, with P = PR (max). Worcester, Massachusetts U.S.A ; 9

10 xllctr-4au PERFORMANCE CHARACTERSTCS: T A Range L, valid at T A = 4 C to 5 C, V CC = 5. V, unless otherwise specif ied Characteristic Symbol Test Conditions Min. Typ. Max. Units Nominal Performance Current Sensing Range PR 4 A Sensitivity Sens PR (min) < P < PR (max) mv/a Zero Current Output Voltage V OUT(Q) Unidirectional; P = A V CC x. V Accuracy Performance T A = 5 C to 5 C; measured at P = PR (max).5.5 % Sensitivity Error E sens T A = 4 C to 5 C; ; measured at P = PR (max) ± % Offset Voltage P = A; T A = 5 C to 5 C mv V OE P = A; T A = -4 C to 5 C ±5 mv Total Output Error P = PR (max), T A = 5 C to 5 C % E TOT P = PR (max), T A = 4 C to 5 C ±3 % Lifetime Drift Characteristics Sensitivity Error Lifetime Drift E sens_drift ± % Total Output Error Lifetime Drift E tot_drift ± % Offset Voltage does not incorporate any error due to external magnetic fields. See section: mpact of External Magnetic Fields. Percentage of P, with P = PR (max). xllctr-4ab PERFORMANCE CHARACTERSTCS: T A Range L, valid at T A = 4 C to 5 C, V CC = 5. V, unless otherwise specif ied Characteristic Symbol Test Conditions Min. Typ. Max. Units Nominal Performance Current Sensing Range PR 4 4 A Sensitivity Sens PR (min) < P < PR (max) 5 mv/a Zero Current Output Voltage V OUT(Q) Bidirectional; P = A V CC x.5 V Accuracy Performance T A = 5 C to 5 C; measured at P = PR (max).5.5 % Sensitivity Error E sens T A = 4 C to 5 C; ; measured at P = PR (max) ± % Offset Voltage P = A; T A = 5 C to 5 C mv V OE P = A; T A = -4 C to 5 C ±5 mv Total Output Error P = PR (max), T A = 5 C to 5 C % E TOT P = PR (max), T A = 4 C to 5 C ±3 % Lifetime Drift Characteristics Sensitivity Error Lifetime Drift E sens_drift ± % Total Output Error Lifetime Drift E tot_drift ± % Offset Voltage does not incorporate any error due to external magnetic fields. See section: mpact of External Magnetic Fields. Percentage of P, with P = PR (max). Worcester, Massachusetts U.S.A ;

11 CHARACTERSTC PERFORMANCE xllctr-5ab Key Parameters Zero Current Output Voltage vs. Temperature Offset Voltage vs. Temperature V (mv) OUT(Q) Offset Voltage (mv) Sensitivity vs. Temperature 45 4 Sensitivity Error vs. Temperature Sensitivity (mv/a) Sensitivity Error (%) Nonlinearity (%) Nonlinearity vs. Temperature Total Error at PR(max) vs. Temperature Total Error (%) Sigma Average -3 Sigma Worcester, Massachusetts U.S.A ;

12 xllctr-ab Key Parameters Zero Current Output Voltage vs. Temperature 55 5 Offset Voltage vs. Temperature 5 V (mv) OUT(Q) Offset Voltage (mv) Sensitivity (mv/a) Sensitivity vs. Temperature Sensitivity Error (%) Sensitivity Error vs. Temperature 5 5 Nonlinearity (%) Nonlinearity vs. Temperature Total Error at PR(max) vs. Temperature Total Error (%) Sigma Average -3 Sigma Worcester, Massachusetts U.S.A ;

13 xllctr-au Key Parameters Zero Current Output Voltage vs. Temperature 53 3 Offset Voltage vs. Temperature 5 V (mv) OUT(Q) Offset Voltage (mv) Sensitivity vs. Temperature 4 Sensitivity Error vs. Temperature Sensitivity (mv/a) Sensitivity Error (%) Nonlinearity (%) Nonlinearity vs. Temperature Total Error at vs. Temperature PR(max) Total Error (%) Sigma Average -3 Sigma Worcester, Massachusetts U.S.A ; 3

14 xllctr-ab Key Parameters V (mv) OUT(Q) Zero Current Output Voltage vs. Temperature Offset Voltage vs. Temperature Offset Voltage (mv) Sensitivity (mv/a) Sensitivity vs. Temperature 5 5 Sensitivity Error (%) Sensitivity Error vs. Temperature 5 5 Nonlinearity (%) Nonlinearity vs. Temperature Total Error at vs. Temperature PR(max) Total Error (%) Sigma Average -3 Sigma Worcester, Massachusetts U.S.A ; 4

15 xllctr-au Key Parameters V (mv) OUT(Q) Zero Current Output Voltage vs. Temperature Offset Voltage vs. Temperature Offset Voltage (mv) Sensitivity vs. Temperature 5 Sensitivity Error vs. Temperature Sensitivity (mv/a) Sensitivity Error (%) Nonlinearity (%) Nonlinearity vs. Temperature Total Error at vs. Temperature PR(max) Total Error (%) Sigma Average -3 Sigma Worcester, Massachusetts U.S.A ; 5

16 xllctr-4ab Key Parameters V (mv) OUT(Q) Zero Current Output Voltage vs. Temperature Offset Voltage vs. Temperature Offset Voltage (mv) Sensitivity vs. Temperature 5 Sensitivity Error vs. Temperature 5 Sensitivity (mv/a) Sensitivity Error (%) Nonlinearity (%) Nonlinearity vs. Temperature Total Error at vs. Temperature PR(max) 5 5 Total Error (%) Sigma Average -3 Sigma Worcester, Massachusetts U.S.A ; 6

17 xllctr-4au Key Parameters Zero Current Output Voltage vs. Temperature 5 Offset Voltage vs. Temperature 55 5 V (mv) OUT(Q) Offset Voltage (mv) Sensitivity (mv/a) Sensitivity vs. Temperature 5 5 Sensitivity Error (%) Sensitivity Error vs. Temperature 5 5 Nonlinearity (%) Nonlinearity vs. Temperature Total Error at PR(max) vs. Temperature Total Error (%) Sigma Average -3 Sigma Worcester, Massachusetts U.S.A ; 7

18 DEFNTONS OF ACCURACY CHARACTERSTCS Sensitivity (Sens) The change in sensor C output in response to a A change through the primary conductor. The sensitivity is the product of the magnetic circuit sensitivity (G / A) ( G =. mt)and the linear C amplifier gain (mv/g). The linear C amplifier gain is programmed at the factory to optimize the sensitivity (mv/a) for the full-scale current of the device. Nonlinearity (E LN ) The nonlinearity is a measure of how linear the output of the sensor C is over the full current measurement range. The nonlinearity is calculated as: { V [ OUT ( PR (max)) V OUT(Q) E (%) LN = V OUT ( PR (max)/) V OUT(Q) where V OUT ( PR (max)) is the output of the sensor C with the maximum measurement current flowing through it and V OUT ( PR (max)/) is the output of the sensor C with half of the maximum measurement current flowing through it. Zero Current Output Voltage (V OUT(Q) ) The output of the sensor when the primary current is zero. For a unipolar supply voltage, it nominally remains at.5 V CC for a bidirectional device and. V CC for a unidirectional device. For example, in the case of a bidirectional output device, V CC = 5. V translates into V OUT(Q) =.5 V. Variation in V OUT(Q) can be attributed to the resolution of the Allegro linear C quiescent voltage trim and thermal drift. Offset Voltage (V OE ) The deviation of the device output from its ideal quiescent value of.5 V CC (bidirectional) or. V CC (unidirectional) due to nonmagnetic causes. To convert this voltage to amperes, divide by the device sensitivity, Sens. Total Output Error (E TOT ) The difference between the current measurement from the sensor C and the actual current ( P ), relative to the actual current. This is equivalent to the difference between the ideal output voltage and the actual output voltage, divided by the ideal sensitivity, relative to the current flowing through the primary conduction path: E TOT ( P ) = V OUT_ideal ( P ) V OUT ( P ) Sens ideal ( P ) P (%) The Total Output Error incorporates all sources of error and is a function of P. At relatively high currents, E TOT will be mostly { [ due to sensitivity error, and at relatively low currents, E TOT will be mostly due to Offset Voltage (V OE ). n fact, at P =, E TOT approaches infinity due to the offset. This is illustrated in figures and. Figure shows a distribution of output voltages versus P at 5 C and across temperature. Figure shows the corresponding E TOT versus P. P (A) Figure. Output voltage versus sensed current P PR (min) Accuracy Across Temperature Accuracy at 5 C Only Accuracy at 5 C Only Accuracy Across Temperature ncreasing V OUT (V) A E TOT Decreasing V OUT (V) Accuracy Across Temperature Accuracy at 5 C Only deal V OUT +E TOT V OUT(Q) Full Scale P PR (max) Across Temperature 5 C Only + P (A) Figure. Total Output Error versus sensed current + P Worcester, Massachusetts U.S.A ; 8

19 APPLCATON NFORMATON mpact of External Magnetic Fields The ACS73 works by sensing the magnetic field created by the current flowing through the package. However, the sensor cannot differentiate between fields created by the current flow and external magnetic fields. This means that external magnetic fields can cause errors in the output of the sensor. Magnetic fields which are perpendicular to the surface of the package affect the output of the sensor, as it only senses fields in that one plane. The error in Amperes can be quantified as: Error(B) = B C F where B is the strength of the external field perpendicular to the surface of the package in Gauss, and C F is the coupling factor in G/A. Then, multiplying by the sensitivity of the part, Sens, gives the error in mv. For example, an external field of Gauss will result in around. A of error. f the ACS73LLCTR-AB, which has a nominal sensitivity of mv/a, is being used, that equates to mv of error on the output of the sensor. External Field Error (mv) Error (A) (Gauss) 5AB AB AB 4AB Worcester, Massachusetts U.S.A ; 9

20 DEFNTONS OF DYNAMC RESPONSE CHARACTERSTCS Power-On Time (t PO ) When the supply is ramped to its operating voltage, the device requires a finite time to power its internal components before responding to an input magnetic field. Power-On Time, t PO, is defined as the time it takes for the output voltage to settle within ±% of its steady state value under an applied magnetic field, after the power supply has reached its minimum specified operating voltage, V CC (min), as shown in the chart at right. Rise Time (t r ) The time interval between a) when the sensor C reaches % of its full scale value, and b) when it reaches 9% of its full scale value. The rise time to a step response is used to derive the bandwidth of the current sensor C, in which ƒ( 3 db) =.35 / t r. Both t r and t RESPONSE are detrimentally affected by eddy current losses observed in the conductive C ground plane. Propagation Delay (t pd ) The propagation delay is measured as the time interval a) when the primary current signal reaches % of its final value, and b) when the device reaches % of its output corresponding to the applied current. Response Time (t RESPONSE ) V V CC (typ.) 9% V OUT V CC (min.) (%) 9 V CC t t t PO V OUT t = time at which power supply reaches minimum specified operating voltage t = time at which output voltage settles within ±% of its steady state value under an applied magnetic field Figure 3: Power-On Time (t PO ) Primary Current V OUT Rise Time, tr Propagation Delay, tpd Figure 4: Rise Time (t r ) and Propagation Delay (t pd ) t t The time interval between a) when the primary current signal reaches 9% of its final value, and b) when the device reaches 9% of its output corresponding to the applied current. (%) 9 Primary Current V OUT Response Time, tresponse Figure 5: Response Time (t RESPONSE ) t Worcester, Massachusetts U.S.A ;

21 Package Outline Drawing For Reference Only Not for Tooling Use (Reference MS-AA) Dimensions in millimeters NOT TO SCALE Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown 4.9 ± A 3.9 ±. 6. ± REF BSC C PCB Layout Reference View Branded Face SEATNG PLANE 8X. C BSC A B C.75 MAX.5. Terminal # mark area SEATNG PLANE C Branding scale and appearance at supplier discretion Reference land pattern layout (reference PC735 SOC7P6X75-8M); all pads a minimum of. mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances GAUGE PLANE B NNNNNNN TPP-AAA LLLLL Standard Branding Reference View N = Device part number T= Device temperature range P= Package Designator A=Amperage L= Lot number Belly Brand = Country of Origin Figure 6: Package LC, 8-pin SOCN Worcester, Massachusetts U.S.A ;

22 Revision History Revision Revision Date Description of Revision June, 4 nitial release. October 9, 4 Added Magnetic Coupling Factor characteristic and Error Due to External Magnetic Fields section April 3, 5 Added Characteristic Performance graphs Copyright -5, reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current. Allegro s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of Allegro s product can reasonably be expected to cause bodily harm. The information included herein is believed to be accurate and reliable. However, assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. For the latest version of this document, visit our website: Worcester, Massachusetts U.S.A ;

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