N-Channel 1.25-W, 2.5-V MOSFET

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1 Si3DS N-Channel.5-W,.5-V MOSFET V DS (V) r DS(on) ( ) V GS =.5 V GS =.5 V. TO-3 (SOT-3) G 3 D S Top View Si3DS (A)* *Marking Code Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS T A = 5 C Continuous Drain Current (T J = 5 C) b. T A = 7 C. A Pulsed Drain Current a M Continuous Source Current (Diode Conduction) b I S. T A = 5 C Power Dissipation b P D.5 W T A = 7 C. Operating Junction and Storage Temperature Range T J, T stg 55 to 5 C Parameter Symbol Limit Unit Maximum Junction-to-Ambient b R thja Maximum Junction-to-Ambient c C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR Board, t 5 sec. c. Surface Mounted on FR Board. For SPICE model information via the Worldwide Web: Document Number: 7 S-53 Rev. D, -May-97 FaxBack

2 Si3DS Static Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage V( BR)DSS V GS = V, = A Gate-Threshold Voltage V GS(th) V DS = V GS, = 5 A.5 V Gate-Body Leakage I GSS V DS = V, V GS = V na Zero Gate Voltage Drain Current I V DS = V, V GS = V DSS V DS = V, V GS = V, T J = 55 C A a V DS 5 V, V GS =.5 V On-State Drain Current (on) V DS 5 V, V GS =.5 V A a V GS =.5 V, = 3. A.7.5 DS(on) V GS =.5 V, = 3. A.5.5 Forward Transconductance a g fs V DS = 5 V, = 3. A S Diode Forward Voltage V SD I S =. A, V GS = V.7. V Dynamic Total Gate Charge Q g 5. Gate-Source Charge Q gs V DS = V, V GS =.5 V, = 3. A.5 nc Gate-Drain Charge Q gd. Input Capacitance C iss 3 Output Capacitance C oss V DS = V, V GS = V, f = MHz 5 pf Reverse Transfer Capacitance C rss 33 Switching Turn-On Delay Time t d(on) 5 Rise Time t r VDD = V, R L = 5.5 Turn-Off Delay Time t 3. A, V GEN =.5 V, R G = d(off) 3 3 ns Fall-Time t f 5 Notes a. Pulse test: PW 3 s duty cycle %.. VNLR FaxBack Document Number: 7 S-53 Rev. D, -May-97

3 Si3DS Output Characteristics Transfer Characteristics V GS = 5 thru.5 V Drain Current (A) V Drain Current (A) T C = 5 C,.5, V.5 V 5 C 3 5 V DS Drain-to-Source Voltage (V) 55 C V GS Gate-to-Source Voltage (V).5 On-Resistance vs. Drain Current Capacitance V GS =.5 V V GS =.5 V C Capacitance (pf) C oss C iss C rss Drain Current (A) V DS Drain-to-Source Voltage (V) Gate-to-Source Voltage (V) V GS 5 3 V DS = V = 3. A Gate Charge (Normalized) On-Resistance vs. Junction Temperature V GS =.5 V = 3. A Q g Total Gate Charge (nc) T J Junction Temperature ( C) Document Number: 7 S-53 Rev. D, -May-97 FaxBack

4 Si3DS Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage Source Current (A) I S T J = 5 C T J = 5 C.... = 3. A V SD Source-to-Drain Voltage (V) V GS Gate-to-Source Voltage (V). Threshold Voltage Single Pulse Power. VGS(th)Variance (V)... = 5 A Power (W) T C = 5 C Single Pulse T J Temperature ( C).... Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse. 3 Square Wave Pulse Duration (sec) 3 FaxBack Document Number: 7 S-53 Rev. D, -May-97

5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: -Jul-

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