IRF3205. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A

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1 Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G IRF3205 HEXFET Power MOSFET D S PD9279E V DSS = 55V R DS(on) = 8.0mΩ I D = 0A The TO220 package is universay preferred for a commerciaindustria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO220 contribute to its wide acceptance throughout the industry. Absoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 0V 0 I T C = C Continuous Drain Current, V 0V 80 A I DM Pused Drain Current 390 P C = 25 C Power Dissipation 200 W Linear Derating Factor.3 W/ C V GS GatetoSource Votage ± 20 V I AR Avaanche Current 62 A E AR Repetitive Avaanche Energy 20 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 75 T STG Therma Resistance TO220AB Storage Temperature Range Sodering Temperature, for 0 seconds 300 (.6mm from case ) Mounting torque, 632 or M3 srew 0 bf in (.N m) Parameter Typ. Max. Units R θjc JunctiontoCase 0.75 R θcs CasetoSink, Fat, Greased Surface 0.50 C/W R θja JunctiontoAmbient 62 C 0/25/0

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Votage 55 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I D = ma R DS(on) Static DraintoSource OnResistance 8.0 mω V GS = 0V, I D = 62A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA g fs Forward Transconductance 44 S V DS = 25V, I D = 62A I DSS DraintoSource Leakage Current 25 V µa DS = 55V, V GS = 0V 250 V DS = 44V, V GS = 0V, T J = 50 C I GSS GatetoSource Forward Leakage V GS = 20V na GatetoSource Reverse Leakage V GS = 20V Q g Tota Gate Charge 46 I D = 62A Q gs GatetoSource Charge 35 nc V DS = 44V Q gd GatetoDrain ("Mier") Charge 54 V GS = 0V, See Fig. 6 and 3 t d(on) TurnOn Deay Time 4 V DD = 28V t r Rise Time 0 I D = 62A ns t d(off) TurnOff Deay Time 50 R G = 4.5Ω t f Fa Time 65 V GS = 0V, See Fig. 0 Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 3247 V GS = 0V C oss Output Capacitance 78 V DS = 25V C rss Reverse Transfer Capacitance 2 pf ƒ =.0MHz, See Fig. 5 E AS Singe Puse Avaanche Energy mj I AS = 62A, L = 38µH D S SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 0 (Body Diode) showing the A G I SM Pused Source Current integra reverse 390 (Body Diode) pn junction diode. S V SD Diode Forward Votage.3 V T J = 25 C, I S = 62A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 62A Q rr Reverse Recovery Charge nc di/dt = A/µs t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 38µH R G = 25Ω, I AS = 62A. (See Figure 2) ƒ I SD 62A, di/dt 207A/µs, V DD V (BR)DSS, T J 75 C Puse width 400µs; duty cyce 2%. Cacuated continuous current based on maximum aowabe junction temperature. Package imitation current is 75A. This is a typica vaue at device destruction and represents operation outside rated imits. This is a cacuated vaue imited to T J = 75 C. 2

3 I D, DraintoSource Current (A) 0 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM4.5V 4.5V I D, DraintoSource Current (A) 0 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0. 0 V DS, DraintoSource Votage (V) 20µs PULSE WIDTH T J = 75 C 0. 0 V DS, DraintoSource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, DraintoSource Current (A) 0 0 T J = 25 C T J = 75 C V DS = 25V 20µs PULSE WIDTH V GS, GatetoSource Votage (V) R DS(on), DraintoSource On Resistance (Normaized) 2.5 I D = 07A V GS = 0V T J, Junction Temperature( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature 3

4 C, Capacitance(pF) IRF V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss Coss Crss V GS, GatetoSource Votage (V) I D = 62A V DS= 44V V DS= 27V V DS= V 0 0 V DS, DraintoSource Votage (V) Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. DraintoSource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I SD, Reverse Drain Current (A) 0 0 T J = 75 C T J = 25 C V GS = 0 V V SD,SourcetoDrain Votage (V) 00 I D, Drain Current (A) 0 0 OPERATION IN THIS AREA LIMITED BY R DS(on) 0us us ms 0ms TC = 25 C TJ = 75 C Singe Puse 0 0 V DS, DraintoSource Votage (V) Fig 7. Typica SourceDrain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4

5 I D, Drain Current (A) LIMITED BY PACKAGE R D V DS V GS D.U.T. R G 0V Puse Width µs Duty Factor 0. % Fig 0a. Switching Time Test Circuit V DS 90% V DD T C, Case Temperature ( C) 0% V GS t d(on) t r t d(off) t f Fig 9. Maximum Drain Current Vs. Case Temperature Fig 0b. Switching Time Waveforms Therma Response(Z thjc ) 0. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thjc TC t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, JunctiontoCase 5

6 R G V DS 20V tp Fig 2a. Uncamped Inductive Test Circuit tp I AS L D.U.T 0.0Ω 5V V (BR)DSS DRIVER V DD A E AS, Singe Puse Avaanche Energy (mj) I D TOP 25A 44A BOTTOM 62A Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avaanche Energy Vs. Drain Current I AS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 0 V Q GS Q GD D.U.T. V DS V GS V G 3mA Charge Fig 3a. Basic Gate Charge Waveform I G I D Current Samping Resistors Fig 3b. Gate Charge Test Circuit 6

7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer R G dv/dt controed by R G Driver same type as D.U.T. I SD controed by Duty Factor "D" D.U.T. Device Under Test V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =0V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD ReAppied Votage Inductor Curent Body Diode Forward Drop Rippe 5% I SD * V GS = 5V for Logic Leve Devices Fig 4. For NChanne HEXFETS 7

8 Package Outine TO220AB Outine Dimensions are shown in miimeters (inches) 2.87 (.3) 2.62 (.03) 0.54 (.45) 0.29 (.405) 3.78 (.49) 3.54 (.39) A 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530) (.255) 6.0 (.240).5 (.045) MIN 4.06 (.60) 3.55 (.40) LEAD ASSIGNMENTS GATE 2 DR AIN 3 SOURCE 4 DR AIN 3X.40 (.055).5 (.045) 2.54 (.) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B A M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.04) DIMENSIONING & TOLERANCING PER ANSI Y4.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO220AB EXAMPLE : THIS IS AN IRF00 WITH ASSEMBLY LOT CODE 9BM INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRF B M PART NUMBER DATE CODE (YYW W ) YY = YEAR WW = WEEK A Data and specifications subject to change without notice. This product has been designed and quaified for the automotive [Q0] market. Quaification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (30) TAC Fax: (30) Visit us at for saes contact information.0/0 8

9 Note: For the most current drawings pease refer to the IR website at:

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