Characteristic Value Units Drain-to-Source Voltage. 50 Continuous Drain Current (T C =100 C)

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1 $GYDQFHG 3RZHU 026)(7 IRFZ44 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea 175 C Operating Temperature Lower Leakage Current: 10µ = 60 Lower R DS(ON) : 0.020Ω (Typ.) bsolute Maximum Ratings BS = 60 R DS(on) = 0.024Ω I D = TO Gate 2. Drain 3. Source S I D I DM E S I R E R dv/dt P D T J, T STG T L Characteristic alue Units Drain-to-Source oltage 60 Continuous Drain Current (T C =25 C) Continuous Drain Current (T C =100 C) 35.4 Drain Current-Pulsed Gate-to-Source oltage Single Pulsed valanche Energy valanche Current Repetitive valanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T C =25 C) Linear Derating Factor Operating Junction and Storage Temperature Range (1) (2) (1) (1) (3) 200 ± to +175 mj mj /ns W W/ C Maximum Lead Temp. for Soldering C 300 Purposes, 1/8 from case for 5-seconds Thermal Resistance R θjc R θcs R θj Characteristic Typ. Max. Units Junction-to-Case Case-to-Sink Junction-to-mbient C/W Rev. B 1999 Fairchild Semiconductor Corporation

2 IRFZ44 1&+$11(/ Electrical Characteristics (T C =25 C unless otherwise specified) Characteristic Min. Typ. Max. Units Test Condition BS Drain-Source Breakdown oltage 60 =0,I D =2µ B/ T J Breakdown oltage Temp. Coeff / C I D =2µ See Fig 7 (th) Gate Threshold oltage =5,I D =2µ I GSS Gate-Source Leakage, Forward Gate-Source Leakage, Reverse n =20 =-20 I DSS Drain-to-Source Leakage Current µ =60 =48,T C =1 C R DS(on) Static Drain-Source On-State Resistance Ω =10,I D =25 (4) g fs Forward Transconductance 32.6 Ω =30,I D =25 (4) C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance pf =0, =25,f =1MHz See Fig 5 t d(on) t r t d(off) t f Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ns =30,I D =, R G =9.1Ω See Fig 13 (4) (5) Q g Total Gate Charge =48, =10, Q gs Gate-Source Charge 12.3 nc I D = Q gd Gate-Drain ( Miller ) Charge 23.6 See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Characteristic Min. Typ. Max. Units Test Condition I S I SM Continuous Source Current Pulsed-Source Current (1) 200 Integral reverse pn-diode in the MOSFET SD Diode Forward oltage (4) 1.8 T J =25 C,I S =, =0 t rr Reverse Recovery Time 85 ns T J =25 C,I F = Q rr Reverse Recovery Charge 0.24 µc di F /dt=100/µs (4) Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=0.4mH, I S =, =25, R G =27Ω, Starting T J =25 C (3) I SD, di/dt 3/µs, BS, Starting T J =25 C (4) Pulse Test : Pulse Width = 2µs, Duty Cycle 2% (5) Essentially Independent of Operating Temperature

3 1&+$11(/ IRFZ44 Top : Bottom : 4.5 Fig 1. Output Characteristics 1. 2 µs Pulse Test 2. T C = 25 o C 10-1, Drain-Source oltage [] 175 o C Fig 2. Transfer Characteristics 25 o C 1. = 0 2. = o C 3. 2 µs Pulse Test , Gate-Source oltage [] 0.04 Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward oltage R DS(on), [ Ω] Drain-Source On-Resistance = 10 = Note : T J = 25 o C I DR, Reverse Drain Current [] 175 o C 25 o C 1. = µs Pulse Test SD, Source-Drain oltage [] Capacitance [pf] Fig 5. Capacitance vs. Drain-Source oltage C iss C iss = C gs + C gd ( C ds = shorted ) C oss = C ds + C gd C rss = C gd C oss C rss 0, Drain-Source oltage [] 1. = 0 2. f = 1 MHz, Gate-Source oltage [] 10 5 Fig 6. Gate Charge vs. Gate-Source oltage = 30 = 48 = 12 I D = Q G, Total Gate Charge [nc]

4 IRFZ44 1&+$11(/ 1.2 Fig 7. Breakdown oltage vs. Temperature 2.5 Fig 8. On-Resistance vs. Temperature BS, (Normalized) Drain-Source Breakdown oltage = 0 2. I D = 2 µ R DS(on), (Normalized) Drain-Source On-Resistance = I D = T J, Junction Temperature [ o C] T J, Junction Temperature [ o C] 10 3 Fig 9. Max. Safe Operating rea Operation in This rea is Limited by R DS(on) 10 µs 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse 10-1, Drain-Source oltage [] DC 1 ms 10 ms 100 µs Fig 10. Max. Drain Current vs. Case Temperature T c, Case Temperature [ o C] Fig 11. Thermal Response Z θjc (t), Thermal Response 10-1 D= single pulse 1. Z θ JC (t)=1.19 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM -T C =P DM *Z θ JC (t) P DM t 1 t t 1, Square Wave Pulse Duration [sec]

5 1&+$11(/ IRFZ44 Fig 12. Gate Charge Test Circuit & Waveform 12 Current Regulator kω 200nF 300nF Same Type as 10 Q g Q gs Q gd 3m Current Sampling (I G ) Resistor R 1 R 2 Current Sampling (I D ) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms R L in out ( 0.5 rated ) out 90% R G 10 in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L L 1 E S = 2 L L I 2 S BS BS ary t p to obtain required peak I D ID BS I S R G C I D (t) 10 (t) t p t p Time

6 IRFZ44 1&+$11(/ Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms + I S L Driver RG Same Type as dv/dt controlled by R G I S controlled by Duty Factor D ( Driver ) Gate Pulse Width D = Gate Pulse Period 10 I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt f Body Diode Forward oltage Drop

7 TRDEMRKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. CEx CoolFET CROSSOLT E 2 CMOS TM FCT FCT Quiet Series FST FSTr GTO HiSeC ISOPLNR MICROWIRE POP PowerTrench QS Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 TinyLogic DISCLIMER FIRCHILD SEMICONDUCTOR RESERES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PRODUCTS HEREIN TO IMPROE RELIBILITY, FUNCTION OR DESIGN. FIRCHILD DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONEY NY LICENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FIRCHILD S PRODUCTS RE NOT UTHORIZED FOR USE S CRITICL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN PPROL OF FIRCHILD SEMICONDUCTOR CORPORTION. s used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STTUS DEFINITIONS Definition of Terms 2. critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition dvance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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