IRGP4063PbF IRGP4063-EPbF

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1 1 6/3/9 INSULATED GATE BIPOLAR TRANSISTOR Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 μs short circuit SOA Square RBSOA 1% of the parts tested for I LM Positive V CE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package G C E n-channel PD IRGP463PbF IRGP463-EPbF V CES = 6V I C = 48A, T C = 1 C t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.65V Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low V CE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI C G C E TO-247AC IRGP463PbF C G C E TO-247AD IRGP463-EPbF G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = 25 C Continuous Collector Current 96 h I T C = 1 C Continuous Collector Current 48 I CM Pulse Collector Current, V GE = 15V 144 A I LM Clamped Inductive Load Current, V GE = 2V c 192 A V GE Continuous Gate-to-Emitter Voltage ±2 V Transient Gate-to-Emitter Voltage ±3 P T C = 25 C Maximum Power Dissipation 33 W P T C = 1 C Maximum Power Dissipation 17 T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 1 lbf in (1.1 N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT).45 C/W R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).24 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 4

2 IRGP463PbF/IRGP463-EPbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 15μA f CT6 ΔV (BR)CES /ΔT J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = 1mA (25 C-175 C) CT I C = 48A, V GE = 15V, T J = 25 C 5,6,7 V CE(on) Collector-to-Emitter Saturation Voltage 2. V I C = 48A, V GE = 15V, T J = 15 C 8,9,1 2.5 I C = 48A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 1.4mA 8,9 ΔV GE(th) /ΔTJ Threshold Voltage temp. coefficient -21 mv/ C V CE = V GE, I C = 1.mA (25 C C) 1,11 gfe Forward Transconductance 32 S V CE = 5V, I C = 48A, PW = 8μs I CES Collector-to-Emitter Leakage Current μa V GE = V, V CE = 6V 45 1 V GE = V, V CE = 6V, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Q g Total Gate Charge (turn-on) I C = 48A 18 Q ge Gate-to-Emitter Charge (turn-on) nc V GE = 15V CT1 Q gc Gate-to-Collector Charge (turn-on) V CC = 4V E on Turn-On Switching Loss g I C = 48A, V CC = 4V, V GE = 15V CT4 E off Turn-Off Switching Loss μj R G =1Ω, L= 2μH, L S =15nH, T J = 25 C E total Total Switching Loss Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 6 78 I C = 48A, V CC = 4V, V GE = 15V CT4 t r Rise time 4 56 ns R G = 1Ω, L = 2μH, L S = 15nH, T J = 25 C t d(off) Turn-Off delay time t f Fall time E on Turn-On Switching Loss g 1625 I C = 48A, V CC = 4V, V GE =15V 12, 14 E off Turn-Off Switching Loss 1585 μj R G =1Ω, L=2μH, L S =15nH, T J = 175 C f CT4 E total Total Switching Loss 321 Energy losses include tail & diode reverse recovery WF1, WF2 t d(on) Turn-On delay time 55 I C = 48A, V CC = 4V, V GE = 15V 13, 15 t r Rise time 45 ns R G = 1Ω, L = 2μH, L S = 15nH CT4 t d(off) Turn-Off delay time 165 T J = 175 C WF1 t f Fall time 45 WF2 C ies Input Capacitance 325 pf V GE = V 17 C oes Output Capacitance 245 V CC = 3V C res Reverse Transfer Capacitance 9 f = 1.Mhz T J = 175 C, I C = 192A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V CT2 Rg = 1Ω, V GE = +15V to V SCSOA Short Circuit Safe Operating Area 5 μs V CC = 4V, Vp =6V 16, CT3 Rg = 1Ω, V GE = +15V to V WF3 Notes: V CC = 8% (V CES ), V GE = 2V, L = 2μH, R G = 1Ω. This is only applied to TO-247AC package. ƒ Pulse width limited by max. junction temperature. Refer to AN-186 for guidelines for measuring V (BR)CES safely. Turn-on energy is measured using the same co-pak diode as IRGP463DPbF. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 8A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2

3 I CE (A) I CE (A) I C (A) I C (A) I C (A) P tot (W) IRGP463PbF/IRGP463-EPbF T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1 1 Fig. 2 - Power Dissipation vs. Case Temperature 1 1μsec 1μsec 1 1 1msec 1.1 Tc = 25 C Tj = 175 C Single Pulse DC Fig. 3 - Forward SOA T C = 25 C, T J 175 C; V GE =15V Fig. 4 - Reverse Bias SOA T J = 175 C; V GE =15V V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8μs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 8μs 3

4 I CE (A) Energy (μj) I CE (A) IRGP463PbF/IRGP463-EPbF V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V I CE = 24A I CE = 48A I CE = 96A Fig. 7 - Typ. IGBT Output Characteristics T J = 175 C; tp = 8μs V GE (V) Fig. 8 - Typical V CE vs. V GE T J = -4 C I CE = 24A I CE = 48A I CE = 96A I CE = 24A I CE = 48A I CE = 96A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = 25 C Fig. 1 - Typical V CE vs. V GE T J = 175 C T J = 25 C T J = 175 C 5 4 E OFF 1 3 E ON V GE (V) Fig Typ. Transfer Characteristics V CE = 5V; tp = 1μs I C (A) Fig Typ. Energy Loss vs. I C T J = 175 C; L = 2μH; V CE = 4V, R G = 1Ω; V GE = 15V 4

5 Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Swiching Time (ns) Time (μs) Swiching Time (ns) Energy (μj) 1 IRGP463PbF/IRGP463-EPbF E OFF td OFF 35 E ON 1 3 td ON 25 t F t R I C (A) Rg (Ω) Fig Typ. Switching Time vs. I C T J = 175 C; L = 2μH; V CE = 4V, R G = 1Ω; V GE = 15V 1 Fig Typ. Energy Loss vs. R G T J = 175 C; L = 2μH; V CE = 4V, I CE = 48A; V GE = 15V 18 4 td OFF t R t F td ON Current (A) R G (Ω) Fig Typ. Switching Time vs. R G T J = 175 C; L = 2μH; V CE = 4V, I CE = 48A; V GE = 15V V GE (V) Fig V GE vs. Short Circuit Time V CC = 4V; T C = 25 C Cies V CES = 3V V CES = 4V Coes 8 6 Cres Q G, Total Gate Charge (nc) Fig Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig Typical Gate Charge vs. V GE I CE = 48A; L = 6μH 5

6 IRGP463PbF/IRGP463-EPbF 1 Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Ri ( C/W) τi (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) τ C τ 6

7 IRGP463PbF/IRGP463-EPbF L L 1K VCC 8 V + - Rg VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / L 4X DC VCC -5V Rg / DRIVER VCC SCSOA Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R = VCC ICM 1K Rg VCC G force D1 22K.75μF C sense E sense Fig.C.T.5 - Resistive Load Circuit E force Fig.C.T.6 - BVCES Filter Circuit 7

8 IRGP463PbF/IRGP463-EPbF VCE (V) tf 9% I CE 5% V CE 5% I CE E OFF Loss Time(µs) Fig. WF1 - Typ. Turn-off Loss T J = 175 C using Fig. CT.4 VCE (V) tr 9% test E ON TEST 1% test 5% V CE Time (µs) Fig. WF2 - Typ. Turn-on Loss T J = 175 C using Fig. CT V CE I CE 4 VCE (V) ICE (A) time (µs) Fig. WF3 - Typ. S.C. T J = 25 C using Fig. CT

9 IRGP463PbF/IRGP463-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$3/( 7+,6,6$1,5)3( :,7+$66(%/< /27&2'(,17(51$7,21$/ 3$5718%(5 $66(%/('21::,17+($66(%/</,1(+ 5(&7,),(5 /2*2,5)3( + '$7(&2'( 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH $66(%/< /27&2'( <($5 :((. /,1(+ TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at 9

10 IRGP463PbF/IRGP463-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information (;$3/( 7+,6,6$1,5*3%.'( :,7+$66(%/< /27&2'( $66(%/('21::,17+($66(%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 Ã+ ÃÃÃÃÃÃÃÃÃÃÃ 3$5718%(5 '$7(&2'( $66(%/< <($5 /27&2'( :((. /,1(+ TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information. 6/9 1

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