Smart Two Channel High-Side Power Switch

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1 Smar Two Channel igh-side Power Swich PROFET BTS6 Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion ) Undervolage and overvolage shudown wih auo-resar and hyseresis Open drain diagnosic oupu Open load deecion in ON-sae CMOS compaible inpu oss of ground and loss of proecion Elecrosaic discharge (ESD) proecion Green Produc (RoS complian) AEC Qualified Produc Summary Overvolage proecion (AZ) 43 Operaing volage (on) channels: each boh parallel On-sae resisance R ON m oad curren (ISO) I (ISO) A Curren limiaion I (SCr) 4 4 A PG-TO Applicaion C compaible power swich wih diagnosic feedback for 2 and 24 DC grounded loads All ypes of resisive, inducive and capacive loads Replaces elecromechanical relays, fuses and discree circuis General Descripion N channel verical power FET wih charge pump, ground referenced CMOS compaible inpu and diagnosic feedback, monolihically inegraed in Smar SIPMOS echnology. Providing embedded proecive funcions. olage source Overvolage proecion Curren limi Gae proecion + 4 ogic 3 6 ESD olage sensor ogic evel shifer Recifier Charge pump imi for unclamped ind. loads Open load Shor o deecion Temperaure sensor 5 Charge pump 2 Curren limi 2 Gae 2 proecion PROFET evel shifer Recifier 2 2 Signal imi for unclamped ind. loads 2 Open load Shor o deecion 2 Temperaure sensor 2 OUT2 R R O O2 7 oad oad ) Wih exernal curren limi (e.g. resisor R =50 ) in connecion, resisor in series wih connecion, reverse load curren limied by conneced load. Daa Shee

2 Pin Symbol Funcion BTS6 (oad, ) Oupu, proeced high-side power oupu of channel 2 ogic ground 3 Inpu, acivaes channel in case of logical high signal 4 Posiive power supply volage, he ab is shored o his pin 5 Diagnosic feedback: open drain, low on failure 6 Inpu 2, acivaes channel 2 in case of logical high signal 7 OUT2 (oad, ) Oupu 2, proeced high-side power oupu of channel 2 Maximum Raings a Tj = 25 C unless oherwise specified Parameer Symbol alues Uni Supply volage (overvolage proecion see page 4) 43 Supply volage for shor circui proecion 34 T j Sar = C oad dump proecion 2) oaddump = U A + s, U A = 3.5 4) oad dump 60 R 3) I = 2, R = 5.3, d = 200 ms, = low or high oad curren (Shor circui curren, see page 5) I self-limied A Operaing emperaure range Sorage emperaure range T j T sg Power dissipaion (DC), T C 25 C P o 36 W Inducive load swich-off energy dissipaion, single pulse = 2, T j,sar = 50 C, T C = 50 C cons. one channel, I = 2.3 A, Z = 89 m, 0 : E AS 290 mj boh channels parallel, I = 4.4 A, Z = 47 m, 0 : 580 see diagrams on page 9 Elecrosaic discharge capabiliy (ESD) (uman Body Model) : all oher pins: acc. MI-D883D, mehod and ESD assn. sd. S ESD Inpu volage (DC) Curren hrough inpu pin (DC) I 2.0 ma Curren hrough saus pin (DC) I 5.0 see inernal circui diagrams page 7 C k 2) Supply volages higher han (AZ) require an exernal curren limi for he and saus pins, e.g. wih a 50 resisor in he connecion and a 5 k resisor in series wih he saus pin. A resisor for he proecion of he inpu is inegraed. 3) R I = inernal resisance of he load dump es pulse generaor 4) oad dump is seup wihou he DUT conneced o he generaor per ISO and D Daa Shee

3 Thermal Characerisics BTS6 Parameer and Condiions Symbol alues Uni min yp max Thermal resisance chip - case, boh channels: each channel: juncion - ambien (free air): R hjc R hja K/W SMD version, device on PCB 5) : 37 Elecrical Characerisics Parameer and Condiions, each channel Symbol alues Uni a Tj = 25 C, = 2 unless oherwise specified min yp max oad Swiching Capabiliies and Characerisics On-sae resisance (pin 4 o or 7) I =.8 A T j =25 C: each channel T j =50 C: Nominal load curren, ISO Norm (pin 4 o or 7) ON = 0.5, T C = 85 C each channel: boh channels parallel: Oupu curren (pin or 7) while disconneced or pulled up, =30, = 0, see diagram page 8 Turn-on ime o 90% OUT : Turn-off ime o 0% OUT : R = 2, Tj = C Slew rae on 0 o 30% OUT, R = 2, Tj = C Slew rae off 70 o 40% OUT, R = 2, Tj = C R ON m I (ISO) A I (high) 0 ma on off s d /d on 0. / s -d/d off 0. / s 5) Device on 50mm*50mm*.5mm epoxy PCB FR4 wih 6cm 2 (one layer, 70 m hick) copper area for connecion. PCB is verical wihou blown air. Daa Shee

4 BTS6 Parameer and Condiions, each channel Symbol alues Uni a Tj = 25 C, = 2 unless oherwise specified min yp max Operaing Parameers Operaing volage 6) Tj = C: (on) Undervolage shudown Tj = C: (under) Undervolage resar Tj = C: (u rs) 5.0 Tj =+50 C: 7.0 Undervolage resar of charge pump (ucp) see diagram page 3 Undervolage hyseresis (under) = (u rs) - (under) (under) 0.2 Overvolage shudown Tj = C: (over) Overvolage resar Tj = C: (o rs) 33 Overvolage hyseresis Tj = C: (over) 0.5 Overvolage proecion 7) Tj = C: (AZ) I =40 ma Sandby curren (pin 4) =0 eakage oupu curren (included in I (off) ) =0 Operaing curren (Pin 2) 8), =5 boh channels on, Tj = C Operaing curren (Pin 2) 8) one channel on, Tj = C: T j = C: T j = 50 C: I (off) A I (off) 2 A I 4 6 ma I 2 3 ma 6) A supply volage increase up o = 5.6 yp wihou charge pump, OUT - 2 7) See also ON(C) in able of proecion funcions and circui diagram page 8. 8) Add I, if I > 0, add I, if >5.5 Daa Shee

5 BTS6 Parameer and Condiions, each channel Symbol alues Uni a Tj = 25 C, = 2 unless oherwise specified min yp max Proecion Funcions 9) Iniial peak shor circui curren limi (pin 4 o or 7) Tj =-40 C: Tj =25 C: Tj =+50 C: Repeiive shor circui shudown curren limi I (SCp) I (SCr) T j = T j (see iming diagrams, page ) 4 A Oupu clamp (inducive load swich off) a OUT = - ON(C) I = 40 ma: ON(C) Thermal overload rip emperaure T j 50 C Thermal hyseresis T j 0 K Reverse baery (pin 4 o 2) 0) - 32 Reverse baery volage drop (ou > ) I = -.8 A, each channel T j =50 C: - ON(rev) 60 m A Diagnosic Characerisics Open load deecion curren (on-condiion) T j =-40 C: T j = C: I (O) 0 0 Open load deecion volage ) (off-condiion) OUT(O) T j = C: Inernal oupu pull down (pin or 7 o 2), OUT =5, T j = C R O k ma 9) Inegraed proecion funcions are designed o preven IC desrucion under faul condiions described in he daa shee. Faul condiions are considered as "ouside" normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. 0) Requires 50 resisor in connecion. The reverse load curren hrough he inrinsic drain-source diode has o be limied by he conneced load. Noe ha he power dissipaion is higher compared o normal operaing condiions due o he volage drop across he inrinsic drain-source diode. The emperaure proecion is no acive during reverse curren operaion! Inpu and Saus currens have o be limied (see max. raings page 2 and circui page 8). ) Exernal pull up resisor required for open load deecion in off sae. Daa Shee

6 BTS6 Parameer and Condiions, each channel Symbol alues Uni a Tj = 25 C, = 2 unless oherwise specified min yp max Inpu and Saus Feedback 2) Inpu resisance R I k T j = C, see circui page 7 Inpu urn-on hreshold volage T j = C: (T+) Inpu urn-off hreshold volage T j = C: (T-).5 Inpu hreshold hyseresis (T) 0.5 Off sae inpu curren (pin 3 or 6), = 0.4, T j = C I (off) 50 A On sae inpu curren (pin 3 or 6), = 3.5, T j = C Delay ime for saus wih open load afer swich off (oher channel in off sae) (see iming diagrams, page 2), T j = C Delay ime for saus wih open load afer swich off (oher channel in on sae) (see iming diagrams, page 2), T j = C Saus invalid afer posiive inpu slope (open load) Tj= C: Saus oupu (open drain) Zener limi volage Tj = C, I = +.6 ma: low volage Tj = C, I = +.6 ma: Tj = +50 C, I = +.6 ma: I (on) A d( O4) s d( O5) 5 20 s d() s (high) (low) ) If a ground resisor R is used, add he volage drop across his resisor. Daa Shee

7 BTS6 Truh Table Normal operaion Open load Channel Channel 2 X Shor circui o Channel OUT2 BTS6 BTS62N X X Z Z X X Z Z X ( 3) ) ( 3) ) 4) ( 5) ) Channel 2 4) X X ( 5) ) Overemperaure boh channel X X Channel X X X X Channel 2 X X X X Undervolage/ Overvolage X X = "ow" evel X = don' care Z = high impedance, poenial depends on exernal circui = "igh" evel Saus signal afer he ime delay shown in he diagrams (see fig 5. page 2...3) Terms Inpu circui (ESD proecion) I I 3 6 I 5 I 4 PROFET OUT2 7 2 R I ON ON2 I I 2 OUT2 R I ESD-ZD I ESD zener diodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he zener volage (increase of up o ). I I 3) Wih addiional exernal pull up resisor 4) An exernal shor of oupu o, in he off sae, causes an inernal curren from oupu o ground. If R is used, an offse volage a he and pins will occur and he low signal may be errorious. 5) ow resisance o may be deeced in he ON-sae by he no-load-deecion Daa Shee

8 BTS6 Saus oupu +5 Open-load deecion ON-sae diagnosic condiion: ON < R ON * I (O) ; high R (ON) + ESD- ZD ON ON ESD-Zener diode: 6. yp., max 5 ma; R (ON) < 380 a.6 ma, ESD zener diodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he zener volage (increase of up o ). ogic uni Open load deecion OUT Inducive and overvolage oupu clamp OFF-sae diagnosic condiion: OUT > 3 yp.; low + Z R EXT ON OFF OUT OUT ON clamped o 47 yp. PR OFET ogic uni Open load deecion R O Signal Overvol. and reverse ba. proecion + disconnec R R I Z ogic R Z I 4 PROFET OUT2 7 2 Signal Z = 6. yp., Z2 = 47 yp., R I = 3.5 k yp R = 50 Any kind of load. In case of Inpu=high is OUT - (T+). Due o >0, no = low signal available. Daa Shee

9 BTS6 disconnec wih pull up PROFET 2 OUT2 Any kind of load. If > - (T+) device says off Due o >0, no = low signal available. disconnec wih energized inducive load 7 Inducive oad swich-off energy dissipaion = E PROFET Energy sored in load inducance: E = /2 I 2 OUT E AS Z { R E oad E E R high PROFET 2 OUT2 Normal load curren can be handled by he PROFET iself. disconnec wih charged exernal inducive load 7 While demagneizing load inducance, he energy dissipaed in PROFET is E AS = E + E - E R = ON(C) i () d, wih an approximae soluion for R 0 : E AS = I I 2 R + OUT(C) ) ln R (+ ( OUT(C) ) Maximum allowable load inducance for a single swich off (boh channels parallel) = f (I ); T j,sar = 50 C,T C = 50 C cons., = 2, R = 0 [m] high PROFET 2 OUT2 7 D 00 0 If oher exernal inducive loads are conneced o he PROFET, addiional elemens like D are necessary I [A] Daa Shee

10 BTS6 Typ. ransien hermal impedance chip case Z hjc = f( p ), one Channel acive Z hjc [K/W] 0 0. D= E-5 E-4 E-3 E-2 E- E0 E Typ. ransien hermal impedance chip case Z hjc = f( p ), boh Channel acive Z hjc [K/W] 0 p [s] 0. D= E-5 E-4 E-3 E-2 E- E0 E p [s] Daa Shee

11 Timing diagrams BTS6 Boh channels are symmeric and consequenly he diagrams are valid for each channel as well as for permued channels Figure a: urn on: Figure 2b: Swiching an inducive load d() OUT *) OUT2 open drain I I (O) Figure 2a: Swiching a lamp: *) if he ime consan of load is oo large, open-load-saus may occur Figure 3a: Shor circui shu down by overemperaure, rese by cooling oher channel: normal operaion OUT I I I (SCp) I (SCr) eaing up may require several milliseconds, depending on exernal condiions Daa Shee

12 BTS6 Figure 4a: Overemperaure: Rese if T j <T j Figure 5b: Open load: deecion in ON-sae, urn on/off o open load channel 2: normal operaion OUT I channel : open load T J d() d( O4) d() d( O5) Figure 5a: Open load: deecion in ON-sae, open load occurs in on-sae Figure 5c: Open load: deecion in ON- and OFF-sae (wih REXT), urn on/off o open load channel 2: normal operaion channel 2: normal operaion I channel : open load I channel : open load d( O) d( O2) d( O) d( O2) normal load open load d() d() d( O5) d( O) = 30 s yp., d( O2) = 20 s yp d( O5) depends on exernal circuiry because of high impedance Daa Shee

13 off-sae on-sae off-sae BTS6 Figure 6a: Undervolage: Figure 7a: Overvolage: (under) (u cp) (u rs) ON(C) (over) (o rs) OUT OUT open drain Figure 6b: Undervolage resar of charge pump on ON(C) (over) (u rs) (o rs) (u cp) (under) charge pump sars a (ucp) =5.6 yp. Daa Shee

14 Package and Ordering Code All dimensions in mm PG-TO BTS6 E328A Ordering code SP Published by Infineon Technologies AG, D-8726 München Infineon Technologies AG 203 All Righs Reserved. Aenion please! BTS6 The informaion herein is given o describe cerain componens and shall no be considered as a guaranee of characerisics. Terms of delivery and righs o echnical change reserved. We hereby disclaim any and all warranies, including bu no limied o warranies of non-infringemen, regarding circuis, descripions and chars saed herein. Infineon Technologies is an approved CECC manufacurer. Informaion For furher informaion on echnology, delivery erms and condiions and prices please conac your neares Infineon Technologies Office in Germany or our Infineon Technologies Represenaives worldwide (see address lis). Warnings Due o echnical requiremens componens may conain dangerous subsances. For informaion on he ypes in quesion please conac your neares Infineon Technologies Office. Infineon Technologies Componens may only be used in lifesuppor devices or sysems wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha life-suppor device or sysem, or o affec he safey or effeciveness of ha device or sysem. ife suppor devices or sysems are inended o be implaned in he human body, or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. Daa Shee

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