TLP250 TLP250. Transistor Inverter Inverter For Air Conditionor IGBT Gate Drive Power MOS FET Gate Drive. Pin Configuration (top view) Truth Table

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1 TOSHIBA Photocoupler GaAlAs Ired & Photo IC TLP20 Transistor Inverter Inverter For Air Conditionor IGBT Gate Drive Power MOS FET Gate Drive Unit in mm The TOSHIBA TLP20 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is lead DIP package. TLP20 is suitable for gate driving circuit of IGBT or power MOS FET. Input threshold current: IF=mA(max.) Supply current (ICC): ma(max.) Supply voltage (CC): 0 3 Output current (IO): ±.A (max.) Switching time (tplh/tphl):.µs(max.) Isolation voltage: 200rms(min.) UL recognized: UL77, file No.E6739 Option (D) type DE approved: DIN DE0/06.92,certificate No.7623 Maximum operating insulation voltage: 630PK Highest permissible over voltage: 000PK (Note) When a DE0 approved type is needed, please designate the "option (D)" Creepage distance: 6.mm(min.) Clearance: 6.mm(min.) TOSHIBA Weight: 0. g 0C Schmatic Pin Configuration (top view) I CC (T r ) CC 2 7 F I O (T r 2) 6 A 0.µF bypass capcitor must be connected between pin and (See Note ). GND : N.C. 2 : Anode 3 : Cathode : N.C. : GND 6 : (Output) 7 : : CC Truth Table Tr Tr2 Input LED On On Off Off Off On

2 Absolute Maximum Ratings (Ta = 2 C) Characteristic Symbol Rating Unit Forward current 20 ma Forward current derating (Ta 70 C) / Ta 0.36 ma / C LED Peak transient forward curent (Note ) PT A Detector Reverse voltage R Junction temperature Tj 2 C H peak output current (P W 2.µs,f khz) (Note 2) I OPH. A L peak output current (P W 2.µs,f khz) (Note 2) I OPL +. A Output voltage (Ta 70 C) 3 (Ta = C) 2 Supply voltage (Ta 70 C) CC 3 (Ta = C) 2 Output voltage derating (Ta 70 C) / Ta 0.73 / C Supply voltage derating (Ta 70 C) CC / Ta 0.73 / C Junction temperature Tj 2 C Operating frequency (Note 3) f 2 khz Operating temperature range T opr 20~ C Storage temperature range T stg ~2 C Lead soldering temperature (0 s) (Note ) T sol 260 C Isolation voltage (AC, min., R.H. 60%) (Note ) B S 200 rms Note : Note 2: Note 3: Note : Note : Note 6: Pulse width P W µs, 300pps Exporenential wavefom Exporenential wavefom, I OPH.0A( 2.µs), I OPL +.0A( 2.µs) It is 2 mm or more from a lead root. Device considerd a two terminal device: Pins, 2, 3 and shorted together, and pins, 6, 7 and shorted together. A ceramic capacitor(0.µf) should be connected from pin to pin to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead length between capacitor and coupler should not exceed cm. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Input current, on (Note 7) (ON) 7 0 ma Input voltage, off F(OFF) 0 0. Supply voltage CC Peak output current I OPH /I OPL ±0. A Operating temperature T opr C Note 7: Input signal rise time (fall time) < 0. µs

3 Electrical Characteristics (Ta = 20~70 C, unless otherwise specified) Characteristic Symbol Test Cir cuit Test Condition Min. Typ.* Max. Unit Input forward voltage F = 0 ma, Ta = 2 C.6. Temperature coefficient of forward voltage F / Ta = 0 ma 2.0 m / C Input reverse current I R R =, Ta = 2 C 0 µa Input capacitance C T = 0, f = MHz, Ta = 2 C 20 pf Output current Output voltage Supply current Threshold input current Threshold input voltage H level I OPH 3 L level I OPL 2 H level H L level L H level I CCH L level I CCL Output L H Output H L LH HL CC = 30 (*) = 0 ma 6 = = 0 6 = 2. CC = +, EE = R L = 200Ω, = ma CC = +, EE = R L = 200Ω, F = 0. CC = 30, = 0mA Ta = 2 C CC = 30, = 0mA CC = 30, = 0mA Ta = 2 C 7. CC = 30, = 0mA CC = +, EE = R L = 200Ω, > 0 CC = +, EE = R L = 200Ω, < 0 A ma.2 ma 0. Supply voltage CC 0 3 Capacitance (input output) C S Resistance(input output) R S S = 0, f = MHz Ta = 2 S = 00, Ta = 2 C R.H. 60% * All typical values are at Ta = 2 C (*): Duration of I O time 0µs pf Ω

4 Switching Characteristics (Ta = 20~70 C, unless otherwise specified) Characteristic Symbol Test Cir cuit Test Condition Min. Typ.* Max. Unit Propagation L H t plh delay time H L t phl = ma (Note 7) 6 CC = +, EE = Output rise time t r R L = 200Ω Output fall time t f Common mode transient immunity at high level output Common mode transient immunity at low level output * All typical values are at Ta = 2 C C MH 7 C ML 7 Note 7: Input signal rise time (fall time) < 0. µs. CM = 600, = ma CC = 30, Ta = 2 C CM = 600, = 0mA CC = 30, Ta = 2 C µs 000 / µs 000 / µs

5 Test Circuit : Test Circuit 2 : IOPL 0.µF A CC I OPL 6- Test Circuit 3 : IOPH Test Circuit : OH 0.µF CC 0.µF CC A -6 R L I OPH H EE Test Circuit : L 0.µF CC F R L L EE

6 Test Circuit 6: t plh, t phl, t r t f 0.µF R L CC t r t f H GND 0% L 0% 00Ω t p LH t p HL EE Test Circuit 7: C MH, C ML A SW B 0.µF CC CM CM 90% 0% t r SW :A( =ma) 3 t f 26 C MH C ML = C MH = 0 () t r (µs) 0 () t f (µs) SW :B( =0) C HL C ML (C MH ) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state

7 F F / Ta Forward current IF (ma) 00 Ta = 2 C Forward voltage temperature coefficient F / Ta (m / C) Forward voltage F () Forward current (ma) 0 Ta 0 CC Ta Allowable forward current IF (ma) Allowable supply voltage CC () Ambient temperature Ta ( C) Ambient temperature Ta ( C) I OPH, I OPL Ta PW 2. µs, f KHz Allowable peak output current IOPH, IOPL (A) Ambient Temperature Ta ( C)

8 RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. The products described in this document are subject to the foreign exchange and foreign trade laws. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically