Forward-Active Terminal Currents
|
|
- Angelina Fields
- 7 years ago
- Views:
Transcription
1 Forward-Active Terminal urrents ollector current: (electron diffusion current density) x (emitter area) diff = ÐJ n A = qd n n po A V V th e W (why minus sign? is by def. Òpositive-in,Ó opposite to +x direction) ase current: (reverse-injected hole diffusion current density) x(emitter area) (minus sign again reßects Òpositive-inÓ convention for vs. +x direction) diff = ÐJ p A = qd p p no A V V th ( e Ð 1) W
2 Forward-Active urrent Gains mitter current: KirchoffÕs current law --> = -( + ) diff diff = Ð( ÐJ n + ÐJ p )A = Ð qd p p no A qd n A n po e V V th W W The ratio of collector current to the magnitude of the emitter current is deþned as Òalpha-FÓ ÐI qd n n po A W = qd p p no A qd n A = α F n po + W W α F --> 1... typically, α F = 0.99.
3 urrent Gains (cont.) The ratio of collector current to base current can be found in terms of α F : 1 Ð α F = ÐI Ð = Ð I α = F α F Solving for as a function of, we find that α F = I = β 1Ð α F F. A typical value is β F = with an uncertainty of +/- 50% since it is a sensitive function of the parameters and internal dimensions of the JT.
4 The Saturation Region V (sat) = 0.1 V (approx) from the characteristics --> both the emitter-base and the base-collector junctions are forward-biased Law of the Junction --> Þnd minority carrier concentrations in the emitter, base, and the collector p n (x) n p (x) p n (x) emitter base collector edge of n + buried layer W x x 0 W W + x x electrons from - junction electrons from - junction oth junctions are injecting and both are also collecting... since the electric Þeld in the depletion region remains in the same direction under forward bias. Separate the electron diffusion current in the base into two components: one due to the emitter-base junction (with zero bias on the base-collector junction) and the other due to the base-collector junction: diff J n = n po ( e V V th Ð 1) n po ( e V V th Ð 1) ÐqD n qd W n W
5 bers-moll Model lectron diffusion current in the base: multiply by the emitter area I diff ÐI S ( e V V th Ð 1) I S ( e V V th = + Ð 1) = ÐI 1 + I 2 mitter current : three components 1. - I 1 due to injection of electrons from the emitter-base junction, 2. - I 1 / β F due to reverse injection of holes into the emitter, and 3. I 2 due to collection of electrons from the base-collector junction. 1 = Ð I 1 + ( ÐI 1 β F ) + I 2 = Ð I1 + I β 2 = F 1 Ð I1 + I α 2 F ollector current : three components (by symmetry) 1. - I 2 due to injection of electrons from the base-collector junction, 2. - I 2 / β R due to reverse injection of holes into the collector, and 3. I 1 due to collection of electrons from the emitter-base junction I 2 I 1 Ð I 2 Ð I 1 β = = Ð I2 = I R β 1 Ð I2 R α R β R = α R / ( 1 - α R ) is the reverse current gain
6 bers-moll Model (cont.) ÒStandard formó for bers-moll equations: deþne two new constants mitter current: S = I S / α F and S = I S / α R, = ÐS ( e V V th Ð 1) + α R S ( e V V th Ð 1) ollector current: = α F S ( e V V th Ð 1) Ð S ( e V V th Ð 1) The collector current and the emitter current represent two diodes with currentcontrolled current sources coupling the emitter and the collector branches
7 arrier Fluxes in Saturation oth junctions injecting and collecting; holes injected into collector recombine with electrons upon reaching the n + buried layer For bias condition shown, > 0... injection from emitter-base junction still dominates. (could have = 0 or even < 0) hole diffusion flux n + polysilicon n + emitter majority hole flux from base contact n + buried layer n-type collector minority hole diffusion flux majority electron flux from collector contact to recombine with hole diffusion flux,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, majority electrons electron diffusion p-type base majority electron flux from collector contact supplying injection into base majority electron flux to collector contact
8 bers-moll quivalent ircuit α F I F I R Diode urrents: I F = S (e V V th 1) I R = S (e V V th 1) I F α R I R This model for the JT applies to general device structures, with the four parameters S, S, α F, and α R being linked by ÒreciprocityÓ α F S = α R S = I S bers-moll must be simpliþed for hand calculation
9 Forward Active Model I R is negligible --> can neglect current through - diode I F = α F α F I F I R mitter current control I F α R I R β F ase current control liminate forward-biased diode by replacing with a 0.7 V battery: β F - + _ 0.7 V + _ 0.7 V β F
10 Saturation Include both diodes in the circuit... both as batteries + + _ 0.7 V _ 0.1 V note that the batteries make the controlled current sources irrelevent to the circuit.
Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime
Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Outline The Bipolar Junction Transistor (BJT): structure and basic operation I-V characteristics in forward active regime Reading Assignment:
More information05 Bipolar Junction Transistors (BJTs) basics
The first bipolar transistor was realized in 1947 by Brattain, Bardeen and Shockley. The three of them received the Nobel prize in 1956 for their invention. The bipolar transistor is composed of two PN
More informationBob York. Transistor Basics - BJTs
ob York Transistor asics - JTs ipolar Junction Transistors (JTs) Key points: JTs are current-controlled devices very JT has a base, collector, and emitter The base current controls the collector current
More informationFundamentals of Microelectronics
Fundamentals of Microelectronics H1 Why Microelectronics? H2 Basic Physics of Semiconductors H3 Diode ircuits H4 Physics of Bipolar ransistors H5 Bipolar Amplifiers H6 Physics of MOS ransistors H7 MOS
More informationAMPLIFIERS BJT BJT TRANSISTOR. Types of BJT BJT. devices that increase the voltage, current, or power level
AMPLFERS Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd devices that increase the voltage, current, or power level have at least three terminals with one controlling the flow between
More informationBIPOLAR JUNCTION TRANSISTORS
CHAPTER 3 BIPOLAR JUNCTION TRANSISTORS A bipolar junction transistor, BJT, is a single piece of silicon with two back-to-back P-N junctions. However, it cannot be made with two independent back-to-back
More informationLecture 17. Bipolar Junction Transistors (BJT): Part 1 Qualitative Understanding - How do they work? Reading: Pierret 10.1-10.6, 11.
Lecture 17 Bipolar Junction Transistors (BJT): Part 1 Qualitative Understanding - How do they work? Reading: Pierret 10.1-10.6, 11.1 Looks sort of like two diodes back to back pnp mnemonic: Pouring N Pot
More informationSolid-State Physics: The Theory of Semiconductors (Ch. 10.6-10.8) SteveSekula, 30 March 2010 (created 29 March 2010)
Modern Physics (PHY 3305) Lecture Notes Modern Physics (PHY 3305) Lecture Notes Solid-State Physics: The Theory of Semiconductors (Ch. 10.6-10.8) SteveSekula, 30 March 2010 (created 29 March 2010) Review
More informationLecture-7 Bipolar Junction Transistors (BJT) Part-I Continued
1 Lecture-7 ipolar Junction Transistors (JT) Part-I ontinued 1. ommon-emitter (E) onfiguration: Most JT circuits employ the common-emitter configuration shown in Fig.1. This is due mainly to the fact that
More informationTransistors. NPN Bipolar Junction Transistor
Transistors They are unidirectional current carrying devices with capability to control the current flowing through them The switch current can be controlled by either current or voltage ipolar Junction
More informationBasic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-2 Transistor
More informationENEE 313, Spr 09 Midterm II Solution
ENEE 313, Spr 09 Midterm II Solution PART I DRIFT AND DIFFUSION, 30 pts 1. We have a silicon sample with non-uniform doping. The sample is 200 µm long: In the figure, L = 200 µm= 0.02 cm. At the x = 0
More informationBipolar Junction Transistor Basics
by Kenneth A. Kuhn Sept. 29, 2001, rev 1 Introduction A bipolar junction transistor (BJT) is a three layer semiconductor device with either NPN or PNP construction. Both constructions have the identical
More information3 The TTL NAND Gate. Fig. 3.1 Multiple Input Emitter Structure of TTL
3 The TTL NAND Gate 3. TTL NAND Gate Circuit Structure The circuit structure is identical to the previous TTL inverter circuit except for the multiple emitter input transistor. This is used to implement
More informationLecture 12: DC Analysis of BJT Circuits.
Whites, 320 Lecture 12 Page 1 of 9 Lecture 12: D Analysis of JT ircuits. n this lecture we will consider a number of JT circuits and perform the D circuit analysis. For those circuits with an active mode
More informationI-V Characteristics of BJT Common-Emitter Output Characteristics
I-V Characteristics of BJT Common-Emitter Output Characteristics C i C C i C B v CE B v EC i B E i B E Lecture 26 26-1 To illustrate the I C -V CE characteristics, we use an enlarged β R Collector Current
More informationBipolar Junction Transistors
Bipolar Junction Transistors Physical Structure & Symbols NPN Emitter (E) n-type Emitter region p-type Base region n-type Collector region Collector (C) B C Emitter-base junction (EBJ) Base (B) (a) Collector-base
More informationSolar Cell Parameters and Equivalent Circuit
9 Solar Cell Parameters and Equivalent Circuit 9.1 External solar cell parameters The main parameters that are used to characterise the performance of solar cells are the peak power P max, the short-circuit
More informationELEC 3908, Physical Electronics, Lecture 15. BJT Structure and Fabrication
ELEC 3908, Physical Electronics, Lecture 15 Lecture Outline Now move on to bipolar junction transistor (BJT) Strategy for next few lectures similar to diode: structure and processing, basic operation,
More informationTheory of Transistors and Other Semiconductor Devices
Theory of Transistors and Other Semiconductor Devices 1. SEMICONDUCTORS 1.1. Metals and insulators 1.1.1. Conduction in metals Metals are filled with electrons. Many of these, typically one or two per
More informationBJT Amplifier Circuits
JT Amplifier ircuits As we have developed different models for D signals (simple large-signal model) and A signals (small-signal model), analysis of JT circuits follows these steps: D biasing analysis:
More informationSemiconductors, diodes, transistors
Semiconductors, diodes, transistors (Horst Wahl, QuarkNet presentation, June 2001) Electrical conductivity! Energy bands in solids! Band structure and conductivity Semiconductors! Intrinsic semiconductors!
More informationReflective Optical Sensor with Transistor Output
Reflective Optical Sensor with Transistor Output Description The NY7 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence
More informationBJT Amplifier Circuits
JT Amplifier ircuits As we have developed different models for D signals (simple large-signal model) and A signals (small-signal model), analysis of JT circuits follows these steps: D biasing analysis:
More informationLAB IV. SILICON DIODE CHARACTERISTICS
LAB IV. SILICON DIODE CHARACTERISTICS 1. OBJECTIVE In this lab you are to measure I-V characteristics of rectifier and Zener diodes in both forward and reverse-bias mode, as well as learn to recognize
More informationDESIGN considerations for a microwave amplifier include
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 9, SEPTEMBER 1998 1993 Three-Dimensional Base Distributed Effects of Long Stripe BJT s: AC Effects on Input Characteristics Ming-Yeh Chuang, Mark E.
More informationBJT Ebers-Moll Model and SPICE MOSFET model
Department of Electrical and Electronic Engineering mperial College London EE 2.3: Semiconductor Modelling in SPCE Course homepage: http://www.imperial.ac.uk/people/paul.mitcheson/teaching BJT Ebers-Moll
More informationTransistor Models. ampel
Transistor Models Review of Transistor Fundamentals Simple Current Amplifier Model Transistor Switch Example Common Emitter Amplifier Example Transistor as a Transductance Device - Ebers-Moll Model Other
More informationTWO PORT NETWORKS h-parameter BJT MODEL
TWO PORT NETWORKS h-parameter BJT MODEL The circuit of the basic two port network is shown on the right. Depending on the application, it may be used in a number of different ways to develop different
More informationW04 Transistors and Applications. Yrd. Doç. Dr. Aytaç Gören
W04 Transistors and Applications W04 Transistors and Applications ELK 2018 - Contents W01 Basic Concepts in Electronics W02 AC to DC Conversion W03 Analysis of DC Circuits (self and condenser) W04 Transistors
More informationTransistor Amplifiers
Physics 3330 Experiment #7 Fall 1999 Transistor Amplifiers Purpose The aim of this experiment is to develop a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must accept input
More informationUnderstanding the p-n Junction by Dr. Alistair Sproul Senior Lecturer in Photovoltaics The Key Centre for Photovoltaic Engineering, UNSW
Understanding the p-n Junction by Dr. Alistair Sproul Senior Lecturer in Photovoltaics The Key Centre for Photovoltaic Engineering, UNSW The p-n junction is the fundamental building block of the electronic
More informationCIRCUITS LABORATORY. In this experiment, the output I-V characteristic curves, the small-signal low
CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the
More informationBipolar Transistor Amplifiers
Physics 3330 Experiment #7 Fall 2005 Bipolar Transistor Amplifiers Purpose The aim of this experiment is to construct a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must
More information3. Diodes and Diode Circuits. 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1
3. Diodes and Diode Circuits 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1 3.1 Diode Characteristics Small-Signal Diodes Diode: a semiconductor device, which conduct the current
More informationCONTENTS. Preface. 1.1.2. Energy bands of a crystal (intuitive approach)
CONTENTS Preface. Energy Band Theory.. Electron in a crystal... Two examples of electron behavior... Free electron...2. The particle-in-a-box approach..2. Energy bands of a crystal (intuitive approach)..3.
More informationDiodes and Transistors
Diodes What do we use diodes for? Diodes and Transistors protect circuits by limiting the voltage (clipping and clamping) turn AC into DC (voltage rectifier) voltage multipliers (e.g. double input voltage)
More informationSolid State Detectors = Semi-Conductor based Detectors
Solid State Detectors = Semi-Conductor based Detectors Materials and their properties Energy bands and electronic structure Charge transport and conductivity Boundaries: the p-n junction Charge collection
More informationBJT Characteristics and Amplifiers
BJT Characteristics and Amplifiers Matthew Beckler beck0778@umn.edu EE2002 Lab Section 003 April 2, 2006 Abstract As a basic component in amplifier design, the properties of the Bipolar Junction Transistor
More informationField-Effect (FET) transistors
Field-Effect (FET) transistors References: Hayes & Horowitz (pp 142-162 and 244-266), Rizzoni (chapters 8 & 9) In a field-effect transistor (FET), the width of a conducting channel in a semiconductor and,
More informationA Comparison of Various Bipolar Transistor Biasing Circuits Application Note 1293
A omparison of Various Bipolar Transistor Biasing ircuits Application Note 1293 Introduction The bipolar junction transistor (BJT) is quite often used as a low noise amplifier in cellular, PS, and pager
More informationBASIC ELECTRONICS TRANSISTOR THEORY. December 2011
AM 5-204 BASIC ELECTRONICS TRANSISTOR THEORY December 2011 DISTRIBUTION RESTRICTION: Approved for Public Release. Distribution is unlimited. DEPARTMENT OF THE ARMY MILITARY AUXILIARY RADIO SYSTEM FORT
More informationTO-92 SOT-23 Mark: 3G. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
MPSH MMBTH MPSH / MMBTH E B TO-92 SOT-2 Mark: G B E This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the µa to ma range to MHz, and low frequency
More informationHigh Open Circuit Voltage of MQW Amorphous Silicon Photovoltaic Structures
High Open Circuit Voltage of MQW Amorphous Silicon Photovoltaic Structures ARGYRIOS C. VARONIDES Physics and EE Department University of Scranton 800 Linden Street, Scranton PA, 18510 United States Abstract:
More informationLecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS
Lecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS Outline 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation 3. I-V characteristics Reading Assignment: Howe and Sodini, Chapter 4, Sections
More informationTransistor amplifiers: Biasing and Small Signal Model
Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT
More informationSMA5111 - Compound Semiconductors Lecture 2 - Metal-Semiconductor Junctions - Outline Introduction
SMA5111 - Compound Semiconductors Lecture 2 - Metal-Semiconductor Junctions - Outline Introduction Structure - What are we talking about? Behaviors: Ohmic, rectifying, neither Band picture in thermal equilibrium
More informationSheet Resistance = R (L/W) = R N ------------------ L
Sheet Resistance Rewrite the resistance equation to separate (L / W), the length-to-width ratio... which is the number of squares N from R, the sheet resistance = (σ n t) - R L = -----------------------
More informationThe MOSFET Transistor
The MOSFET Transistor The basic active component on all silicon chips is the MOSFET Metal Oxide Semiconductor Field Effect Transistor Schematic symbol G Gate S Source D Drain The voltage on the gate controls
More informationSeries and Parallel Circuits
Direct Current (DC) Direct current (DC) is the unidirectional flow of electric charge. The term DC is used to refer to power systems that use refer to the constant (not changing with time), mean (average)
More informationIII. Reaction Kinetics
III. Reaction Kinetics Lecture 13: Butler-Volmer equation Notes by ChangHoon Lim (and MZB) 1. Interfacial Equilibrium At lecture 11, the reaction rate R for the general Faradaic half-cell reaction was
More informationCHAPTER 10 Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
CHAPTER 10 Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor Study the characteristics of energy bands as a function of applied voltage in the metal oxide semiconductor structure known
More informationBJT Circuit Configurations
BJT Circuit Configurations V be ~ ~ ~ v s R L v s R L V Vcc R s cc R s v s R s R L V cc Common base Common emitter Common collector Common emitter current gain BJT Current-Voltage Characteristics V CE,
More informationIntroduction to CMOS VLSI Design
Introduction to CMOS VLSI esign Slides adapted from: N. Weste,. Harris, CMOS VLSI esign, Addison-Wesley, 3/e, 24 Introduction Integrated Circuits: many transistors on one chip Very Large Scale Integration
More informationVaractor SPICE Models for RF VCO Applications
APPLIATION NOTE Varactor SPIE odels for F VO Applications The varactor SPIE model described in this application note is useful for F voltage controlled oscillator (VO) applications. However, the model
More informationVaractor SPICE Models for RF VCO Applications
APPLIATION NOTE Varactor SPIE odels for F VO Applications The varactor SPIE model described in this Application Note is useful for F Voltage ontrolled Oscillator (VO) applications. However, the model neglects
More informationFUNDAMENTAL PROPERTIES OF SOLAR CELLS
FUNDAMENTAL PROPERTIES OF SOLAR CELLS January 31, 2012 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC Principles and Varieties of Solar Energy (PHYS 4400) and Fundamentals of
More informationBob York. Transistor Basics - MOSFETs
Bob York Transistor Basics - MOSFETs Transistors, Conceptually So far we have considered two-terminal devices that are described by a current-voltage relationship I=f(V Resistors: Capacitors: Inductors:
More informationAN3022. Establishing the Minimum Reverse Bias for a PIN Diode in a High-Power Switch. 1. Introduction. Rev. V2
Abstract - An important circuit design parameter in a high-power p-i-n diode application is the selection of an appropriate applied dc reverse bias voltage. Until now, this important circuit parameter
More informationLecture 21: Junction Field Effect Transistors. Source Follower Amplifier
Whites, EE 322 Lecture 21 Page 1 of 8 Lecture 21: Junction Fiel Effect Transistors. Source Follower Amplifier As mentione in Lecture 16, there are two major families of transistors. We ve worke with BJTs
More informationLab 1 Diode Characteristics
Lab 1 Diode Characteristics Purpose The purpose of this lab is to study the characteristics of the diode. Some of the characteristics that will be investigated are the I-V curve and the rectification properties.
More informationField Effect Transistors
506 19 Principles of Electronics Field Effect Transistors 191 Types of Field Effect Transistors 193 Principle and Working of JFET 195 Importance of JFET 197 JFET as an Amplifier 199 Salient Features of
More informationCommon-Emitter Amplifier
Common-Emitter Amplifier A. Before We Start As the title of this lab says, this lab is about designing a Common-Emitter Amplifier, and this in this stage of the lab course is premature, in my opinion,
More informationAN105. Introduction: The Nature of VCRs. Resistance Properties of FETs
Introduction: The Nature of s A voltage-controlled resistor () may be defined as a three-terminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential
More informationLecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads.
Whites, EE 3 Lecture 18 Page 1 of 10 Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads. We discussed using transistors as switches in the last lecture.
More informationSlide 1 / 26. Inductance. 2011 by Bryan Pflueger
Slide 1 / 26 Inductance 2011 by Bryan Pflueger Slide 2 / 26 Mutual Inductance If two coils of wire are placed near each other and have a current passing through them, they will each induce an emf on one
More informationChapter 14: Inductor design
Chapter 14 Inductor Design 14.1 Filter inductor design constraints 14.2 A step-by-step design procedure 14.3 Multiple-winding magnetics design using the K g method 14.4 Examples 14.5 Summary of key points
More informationHow To Use A Kodak Kodacom 2.5D (Kodak) With A Power Supply (Power Supply) And Power Supply
Reflective Optical Sensor with Transistor Output Description The CNY7 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence
More informationInsulated Gate Bipolar Transistor (IGBT) Basics Abdus Sattar, IXYS Corporation 1 IXAN0063
Abdus Sattar, IXYS Corporation 1 This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology
More informationDavid L. Senasack June, 2006 Dale Jackson Career Center, Lewisville Texas. The PN Junction
David L. Senasack June, 2006 Dale Jackson Career Center, Lewisville Texas The PN Junction Objectives: Upon the completion of this unit, the student will be able to; name the two categories of integrated
More informationApplication Notes FREQUENCY LINEAR TUNING VARACTORS FREQUENCY LINEAR TUNING VARACTORS THE DEFINITION OF S (RELATIVE SENSITIVITY)
FREQUENY LINEAR TUNING VARATORS FREQUENY LINEAR TUNING VARATORS For several decades variable capacitance diodes (varactors) have been used as tuning capacitors in high frequency circuits. Most of these
More information2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com.
Small Signal Switching Transistor NPN Silicon Features MILPRF19/ Qualified Available as JAN, JANTX, and JANTXV COLLECTOR MAXIMUM RATINGS (T A = unless otherwise noted) Characteristic Symbol Value Unit
More informationMeasuring Silicon and Germanium Band Gaps using Diode Thermometers
Measuring Silicon and Germanium Band Gaps using Diode Thermometers Haris Amin Department of Physics, Wabash College, Crawfordsville, IN 47933 (Dated: April 11, 2007) This paper reports the band gaps of
More informationCharacteristic and use
. Basic principle A PSD basically consists of a uniform resistive layer formed on one or both surfaces of a high-resistivity semiconductor substrate, and a pair of electrodes formed on both ends of the
More informationFundamentals of Power Electronics. Robert W. Erickson University of Colorado, Boulder
Robert W. Erickson University of Colorado, Boulder 1 1.1. Introduction to power processing 1.2. Some applications of power electronics 1.3. Elements of power electronics Summary of the course 2 1.1 Introduction
More informationPhysics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 13, 2006
Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 13, 2006 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain
More informationAmplifier Teaching Aid
Amplifier Teaching Aid Table of Contents Amplifier Teaching Aid...1 Preface...1 Introduction...1 Lesson 1 Semiconductor Review...2 Lesson Plan...2 Worksheet No. 1...7 Experiment No. 1...7 Lesson 2 Bipolar
More informationV-I CHARACTERISTICS OF DIODE
V-I CHARACTERISTICS OF DIODE RAVITEJ UPPU 1 1. Aim We try to see the Voltage-Current realtion in Diodes and compare the difference between various types of diodes including Zener Diode. 2. Theory The diode
More informationCommon Emitter BJT Amplifier Design Current Mirror Design
Common Emitter BJT Amplifier Design Current Mirror Design 1 Some Random Observations Conditions for stabilized voltage source biasing Emitter resistance, R E, is needed. Base voltage source will have finite
More informationWhat is Solar? The word solar is derived from the Latin word sol (the sun, the Roman sun god) and refers to things and methods that relate to the sun.
What is Solar? The word solar is derived from the Latin word sol (the sun, the Roman sun god) and refers to things and methods that relate to the sun. What is the solar industry? The solar industry is
More informationApplication Note AN-983
Application Note AN-983 IGBT Characteristics Table of Contents 1. How the IGBT complements the power MOSFET... 2 Page 2. Silicon structure and equivalent circuit... 2 3. Conduction characteristics... 4
More informationSolution Derivations for Capa #11
Solution Derivations for Capa #11 Caution: The symbol E is used interchangeably for energy and EMF. 1) DATA: V b = 5.0 V, = 155 Ω, L = 8.400 10 2 H. In the diagram above, what is the voltage across the
More informationThe Physics of Energy sources Renewable sources of energy. Solar Energy
The Physics of Energy sources Renewable sources of energy Solar Energy B. Maffei Bruno.maffei@manchester.ac.uk Renewable sources 1 Solar power! There are basically two ways of using directly the radiative
More informationThe basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above.
Cascode Amplifiers by Dennis L. Feucht Two-transistor combinations, such as the Darlington configuration, provide advantages over single-transistor amplifier stages. Another two-transistor combination
More informationSeries and Parallel Circuits
Series and Parallel Circuits Direct-Current Series Circuits A series circuit is a circuit in which the components are connected in a line, one after the other, like railroad cars on a single track. There
More informationCAR IGNITION WITH IGBTS
APPLICATION NOTE CAR IGNITION WITH IGBTS by M. Melito ABSTRACT IGBTs are used in a variety of switching applications thanks to their attractive characteristics, particularly their peak current capability,
More informationTransistor Biasing. The basic function of transistor is to do amplification. Principles of Electronics
192 9 Principles of Electronics Transistor Biasing 91 Faithful Amplification 92 Transistor Biasing 93 Inherent Variations of Transistor Parameters 94 Stabilisation 95 Essentials of a Transistor Biasing
More informationG019.A (4/99) UNDERSTANDING COMMON MODE NOISE
UNDERSTANDING COMMON MODE NOISE PAGE 2 OF 7 TABLE OF CONTENTS 1 INTRODUCTION 2 DIFFERENTIAL MODE AND COMMON MODE SIGNALS 2.1 Differential Mode signals 2.2 Common Mode signals 3 DIFFERENTIAL AND COMMON
More informationConduction in Semiconductors
Chapter 1 Conduction in Semiconductors 1.1 Introduction All solid-state devices, e.g. diodes and transistors, are fabricated from materials known as semiconductors. In order to understand the operation
More informationMOS (metal-oxidesemiconductor) 李 2003/12/19
MOS (metal-oxidesemiconductor) 李 2003/12/19 Outline Structure Ideal MOS The surface depletion region Ideal MOS curves The SiO 2 -Si MOS diode (real case) Structure A basic MOS consisting of three layers.
More informationChapter 7 Direct-Current Circuits
Chapter 7 Direct-Current Circuits 7. Introduction...7-7. Electromotive Force...7-3 7.3 Resistors in Series and in Parallel...7-5 7.4 Kirchhoff s Circuit Rules...7-7 7.5 Voltage-Current Measurements...7-9
More informationSpecial-Purpose Diodes
7 Special-Purpose Diodes 7.1 Zener Diode 7.2 Light-Emitting Diode (LED) 7.3 LED Voltage and Current 7.4 Advantages of LED 7.5 Multicolour LEDs 7.6 Applications of LEDs 7.7 Photo-diode 7.8 Photo-diode operation
More informationTransistor Characteristics and Single Transistor Amplifier Sept. 8, 1997
Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain
More informationLecture 9 - MOSFET (I) MOSFET I-V Characteristics. October 6, 2005
6.12 - Microelectronic Devices and Circuits - Fall 25 Lecture 9-1 Lecture 9 - MOSFET (I) MOSFET I-V Characteristics October 6, 25 Contents: 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation
More informationVI. Transistor amplifiers: Biasing and Small Signal Model
VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.
More informationLAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS
LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. OBJECTIVE In this lab, you will study the DC characteristics of a Bipolar Junction Transistor (BJT). 2. OVERVIEW In this lab, you will inspect the
More information2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS
NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000
More informationJunction FETs. FETs. Enhancement Not Possible. n p n p n p
A11 An Introduction to FETs Introduction The basic principle of the field-effect transistor (FET) has been known since J. E. Lilienfeld s patent of 1925. The theoretical description of a FET made by hockley
More information1700V Bi-Mode Insulated Gate Transistor (BIGT) on Thin Wafer Technology
1700V Bi-Mode Insulated Gate Transistor (BIGT) on Thin Wafer Technology Munaf Rahimo, Jan Vobecky, Chiara Corvasce ISPS, September 2010, Prague, Czech Republic Copyright [2010] IEEE. Reprinted from the
More information