PMD9002D. 1. Product profile. MOSFET driver. 1.1 General description. 1.2 Features. 1.3 Applications. Quick reference data

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1 Rev November 2006 Product data sheet. Product profile. General description NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and high-speed switching diode connected in totem pole configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2 Features Two transistors and one high-speed switching diode as driver Totem pole configuration Application-optimized pinout Internal connections to minimize layout effort Space-saving solution Reduces component count.3 Applications.4 Quick reference data Table. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor I C collector current A Transistor 2 (TR2) V CEO collector-emitter voltage open base V I CM peak collector current single pulse; A t p ms Diode (D) I F forward current A V F forward voltage I F = 200 ma [] - -. V [] Pulse test: t p 300 µs; δ 0.02.

2 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Symbol OUT output 2 GND ground IN input TR2 4 RC collector resistor RC collector resistor D 6 VCC supply voltage 5 TR R2 R aaa Ordering information 4. Marking Table 3. Ordering information Type number Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 Table 4. Marking codes Type number Marking code 9C 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6034). Symbol Parameter Conditions Min Max Unit Transistor (TR) V CBO collector-base voltage open emitter - 50 V V CEO collector-emitter voltage open base - 50 V V EBO emitter-base voltage open collector - 0 V I C collector current - 0. A I CM peak collector current single pulse; - 0. A t p ms V I input voltage positive V negative - 0 V Transistor 2 (TR2) V CBO collector-base voltage open emitter - 50 V V CEO collector-emitter voltage open base - 45 V _ Product data sheet Rev November of 5

3 Table 5. Limiting values continued In accordance with the Absolute Maximum Rating System (IEC 6034). Symbol Parameter Conditions Min Max Unit I C collector current - 0. A I CM peak collector current single pulse; A t p ms I BM peak base current single pulse; A t p ms P tot total power dissipation T amb 25 C [] mw [2] mw [3] mw Diode (D) I F forward current A I FRM repetitive peak forward current t p ms; δ A I FSM non-repetitive peak forward current square wave t p =µs - 9 A t p = 00 µs - 3 A t p =0ms -.7 A Device T j junction temperature - 50 C T amb ambient temperature C T stg storage temperature C [] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. _ Product data sheet Rev November of 5

4 aaa99 P tot (mw) 400 () T amb ( C) () Ceramic PCB, Al 2 O 3, standard footprint FR4 PCB, mounting pad for collector cm 2 FR4 PCB, standard footprint Fig. TR2: Power derating curves 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Transistor 2 (TR2) R th(j-a) thermal resistance from in free air [] K/W junction to ambient [2] K/W [3] K/W [] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. _ Product data sheet Rev November of 5

5 0 3 Z th(j-a) (K/W) duty cycle = aaa t p (s) Fig 2. FR4 PCB, standard footprint TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa92 Z th(j-a) (K/W) 0 2 duty cycle = t p (s) Fig 3. FR4 PCB, mounting pad for collector cm 2 TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values _ Product data sheet Rev November of 5

6 aaa922 Z th(j-a) (K/W) duty cycle = t p (s) Fig 4. Ceramic PCB, Al 2 O 3, standard footprint TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Transistor (TR) I CBO collector-base cut-off current V CB = 50 V; I E = 0 A na I CEO collector-emitter cut-off current V CE = 30 V; I E =0A - - µa V CE = 30 V; I E =0A; µa T j = 50 C I EBO emitter-base cut-off V EB =5V; I E = 0 A ma current h FE DC current gain V CE =5V; I C =20mA V CEsat collector-emitter I C = 0 ma; I B = 0.5 ma mv saturation voltage V I(off) off-state input voltage V CE =5V; I C = 0. ma V V I(on) on-state input voltage V CE = 0.3 V; I C = 20 ma V R bias resistor (input) kω R2/R bias resistor ratio Transistor 2 (TR2) I CBO V CEsat collector-base cut-off current collector-emitter saturation voltage V CB = 30 V; I E =0A na V CB = 30 V; I E =0A; µa T j = 50 C I C = 0 ma; I B = 0.5 ma mv I C = 00 ma; I B = 5 ma mv I C = 200 ma; I B = 20 ma mv _ Product data sheet Rev November of 5

7 Table 7. Characteristics continued T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V BEsat base-emitter saturation I C = 0 ma; I B = 0.5 ma V voltage I C = 00 ma; I B = 5 ma V V BE base-emitter voltage V CE =5V; I C = 2 ma mv V CE =5V; I C = 0 ma mv Diode (D) V F forward voltage I F = 200 ma [] - -. V TR2 and D h FE DC current gain V CE =5V; I C = ma V CE =5V; I C = 00 ma V CE =5V; I C = 200 ma Device t d delay time I C = 0.05 A; I B = 2.5 ma ns t r rise time ns t on turn-on time ns t s storage time ns t f fall time ns t off turn-off time ns [] Pulse test: t p 300 µs; δ _ Product data sheet Rev November of 5

8 aaa aaa03 h FE 0 2 () V CEsat (V) 0 () 0 Fig V CE =5V () T amb = 50 C T amb =25 C T amb = 40 C TR: DC current gain as a function of collector current; typical values Fig I C /I B =20 () T amb = 00 C T amb =25 C T amb = 40 C TR: Collector-emitter saturation voltage as a function of collector current; typical values 0 006aaa aaa033 V I(on) (V) V I(off) (V) () () Fig V CE = 0.3 V () T amb = 40 C T amb =25 C T amb = 00 C TR: On-state input voltage as a function of collector current; typical values Fig V CE =5V () T amb = 40 C T amb =25 C T amb = 00 C TR: Off-state input voltage as a function of collector current; typical values _ Product data sheet Rev November of 5

9 500 h FE (4) (5) 006aaa I C (A) aaa930 I B (ma) = () Fig V CE =5V () T amb = 55 C T amb =25 C T amb = 00 C (4) T amb = 25 C (5) T amb = 50 C TR2 and D: DC current gain as a function of collector current; typical values V CE (V) T amb =25 C Fig 0. TR2: Collector current as a function of collector-emitter voltage; typical values.2 006aaa aaa932 V BE (V).0 V BEsat (V).0 () () V CE =5V () T amb = 55 C T amb =25 C T amb = 00 C Fig. TR2: Base-emitter voltage as a function of collector current; typical values I C /I B =20 () T amb = 55 C T amb =25 C T amb = 00 C Fig 2. TR2: Base-emitter saturation voltage as a function of collector current; typical values _ Product data sheet Rev November of 5

10 006aaa aaa934 V CEsat (V) V CEsat (V) 0 () 0 () I C /I B =20 () T amb = 00 C T amb =25 C T amb = 55 C Fig 3. TR2: Collector-emitter saturation voltage as a function of collector current; typical values T amb =25 C () I C /I B = 00 I C /I B =50 I C /I B =0 Fig 4. TR2: Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information V CC RC DUT TR2 oscilloscope (probe) 450 Ω V I R TR D V O (probe) 450 Ω oscilloscope R2 006aaa936 I C = 0.05 A; I B = 2.5 ma; R C = 80 Ω Fig 5. Test circuit for switching times _ Product data sheet Rev November of 5

11 9. Package outline pin index Dimensions in mm Fig 6. Package outline SOT457 (SC-74) 0. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 2NC ordering code. [] Type number Package Description Packing quantity SOT457 4 mm pitch, 8 mm tape and reel; T [2] mm pitch, 8 mm tape and reel; T2 [3] [] For further information and the availability of packing methods, see Section 4. [2] T: normal taping [3] T2: reverse taping _ Product data sheet Rev November 2006 of 5

12 . Soldering solder lands solder resist occupied area solder paste msc422 Dimensions in mm Fig 7. Reflow soldering footprint SOT457 (SC-74) 5.30 solder lands solder resist occupied area msc423 Dimensions in mm Fig 8. Wave soldering footprint SOT457 (SC-74) _ Product data sheet Rev November of 5

13 2. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes _ Product data sheet - - _ Product data sheet Rev November of 5

14 3. Legal information 3. Data sheet status Document status [][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 3.3 Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6034) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 3.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 4. Contact information For additional information, please visit: For sales office addresses, send an to: salesaddresses@nxp.com _ Product data sheet Rev November of 5

15 5. Contents Product profile General description Features Applications Quick reference data Pinning information Ordering information Marking Limiting values Thermal characteristics Characteristics Test information Package outline Packing information Soldering Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: 20 November 2006 Document identifier: _