TSL12S, TSL13S, TSL14S LIGHT-TO-VOLTAGE CONVERTERS

Size: px
Start display at page:

Download "TSL12S, TSL13S, TSL14S LIGHT-TO-VOLTAGE CONVERTERS"

Transcription

1 TSLS, TSL3S, TSLS TAOS5E SEPTEMBER 7 Converts Light Intensity to Output Voltage Monolithic Silicon IC Containing Photodiode, Transconductance Amplifier, and Feedback Components Single-Supply Operation....7 V to 5.5 V High Irradiance Responsivity...Typical 6 mv/(μw/cm ) at λ p = 6 nm (TSLS) Low Supply Current.... ma Typical Sidelooker 3-Lead Plastic Package RoHS Compliant ( LF Package Only) PACKAGE S SIDELOOKER (FRONT VIEW) PACKAGE SM SURFACE MOUNT SIDELOOKER (FRONT VIEW) GND V DD 3 OUT GND 3 V DD OUT Description The TSLS, TSL3S, and TSLS are cost-optimized, highly integrated light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 8 MΩ, MΩ, and 5 MΩ, respectively) on a single monolithic integrated circuit. The photodiode active area is.5 mm.5 mm and the sensors respond to light in the range of 3 nm to 5 nm. Output voltage is linear with light intensity (irradiance) incident on the sensor over a wide dynamic range. These devices are supplied in a 3-lead clear plastic sidelooker package (S). When supplied in the lead (Pb) free package, the device is RoHS compliant. Functional Block Diagram + Voltage Output The LUMENOLOGY Company Texas Advanced Optoelectronic Solutions Inc. Klein Road Suite 3 Plano, TX 757 (97) Copyright 7, TAOS Inc.

2 TSLS, TSL3S, TSLS TAOS5E SEPTEMBER 7 Available Options DEVICE T A PACKAGE LEADS PACKAGE DESIGNATOR ORDERING NUMBER TSLS C to 7 C 3-lead Sidelooker S TSLS TSLS C to 7 C 3-lead Sidelooker Lead (Pb) Free S TSLS LF TSLS C to 7 C 3-lead Surface-Mount Sidelooker Lead (Pb) Free SM TSLSM LF TSL3S C to 7 C 3-lead Sidelooker S TSL3S TSL3S C to 7 C 3-lead Sidelooker Lead (Pb) Free S TSL3S LF TSL3S C to 7 C 3-lead Surface-Mount Sidelooker Lead (Pb) Free SM TSL3SM LF TSLS C to 7 C 3-lead Sidelooker S TSLS TSLS C to 7 C 3-lead Sidelooker Lead (Pb) Free S TSLS LF TSLS C to 7 C 3-lead Surface-Mount Sidelooker Lead (Pb) Free SM TSLSM LF Terminal Functions TERMINAL NAME NO. TYPE DESCRIPTION GND Power supply ground (substrate). All voltages are referenced to GND. OUT 3 O Output voltage. V DD Supply voltage. Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) Supply voltage, V DD (see Note ) V Output current, I O ± ma Duration of short-circuit current at (or below) 5 C (see Note ) s Operating free-air temperature range, T A C to 85 C Storage temperature range, T stg C to 85 C Lead temperature,6 mm (/6 inch) from case for seconds (S Package) C Reflow solder, in accordance with J-STD-C or J-STD-D (SM Package) C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES:. All voltages are with respect to GND.. Output may be shorted to supply. Recommended Operating Conditions MIN NOM MAX UNIT Supply voltage, V DD V Operating free-air temperature, T A 7 C Copyright 7, TAOS Inc. The LUMENOLOGY Company

3 TSLS, TSL3S, TSLS TAOS5E SEPTEMBER 7 Electrical Characteristics at V DD = 5 V, T A = 5 C, λ p = 6 nm, R L = kω (unless otherwise noted) (see Notes 3,, 5) PARAMETER TEST CONDITIONS TSLS TSL3S TSLS MIN TYP MAX MIN TYP MAX MIN TYP MAX V OM Maximum output voltage V V O Output voltage E e = 8 μw/cm.5.5 E e = 3 μw/cm.5.5 E e = μw/cm.5.5 E e = 6 μw/cm E e = 6 μw/cm E e = μw/cm R e Irradiance responsivity Note V OS Extrapolated offset voltage Note V V d Dark voltage E e = V E e = 8 μw/cm..7 I E e = 3 μw/cm D Supply current..7 ma E e = μw/cm..7 NOTES: 3. Measurements are made with R L = kω between output and ground.. Optical measurements are made using small-angle incidenadiation from an LED optical source. 5. The 6 nm input irradiance E e is supplied by an AlInGaP LED with peak wavelength λ p = 6 nm. 6. Irradiance responsivity is characterized over the range V O =. to V. The best-fit straight line of Output Voltage V O versus irradiance E e over this range may have a positive or negative extrapolated V O value for E e =. For low irradiance values, the output voltage V O versus irradiance E e characteristic is non linear with a deviation toward V O =, E e = origin from the best-fit straight line referenced above. UNIT V mv/ (μw/ cm ) Dynamic Characteristics at V DD = 5 V, T A = 5 C, λ p = 6 nm, R L = kω (unless otherwise noted) (see Figure ) TSLS TSL3S TSLS PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNIT Output pulse delay Min V O = V; Peak V O = V time for rising edge μss (% to %) Min V O =.5 V; Peak V O = V.3..6 Output pulse rise time Min V O = V; Peak V O = V 7..6 μss (% to 9%) Min V O =.5 V; Peak V O = V Output pulse delay time for falling edge Min V O = V; Peak V O = V.3..8 (% to 9%) Min V O =.5 V; Peak V O = V...7 Output pulse fall time Min V O = V; Peak V O = V (9% to %) Min V O =.5 V; Peak V O = V μss μss The LUMENOLOGY Company Copyright 7, TAOS Inc. 3

4 TSLS, TSL3S, TSLS TAOS5E SEPTEMBER 7 PARAMETER MEASUREMENT INFORMATION Pulse Generator V DD Input Peak E e Min E e LED (see Note A) TSLxS + 3 R L Output Peak V O Min V O % 9% 9% % TEST CIRCUIT OUTPUT VOLTAGE WAVEFORM (See Note B) NOTES: A. The input irradiance is supplied by a pulsed AlInGaP light-emitting diode with the following characteristics: λ p = 6 nm, < μs, < μs. B. The output waveform is monitored on an oscilloscope with the following characteristics: < ns, Z i MΩ, C i pf. Figure. Switching Times TYPICAL CHARACTERISTICS PHOTODIODE SPECTRAL RESPONSIVITY NORMALIZED OUTPUT VOLTAGE vs ANGULAR DISPLACEMENT.8.8 Relative Responsivity.6.. Normalized Output Voltage.6.. Optical Axis λ Wavelength nm Figure θ Angular Displacement Figure 3 Copyright 7, TAOS Inc. The LUMENOLOGY Company

5 TSLS, TSL3S, TSLS TAOS5E SEPTEMBER 7 TSLS TYPICAL CHARACTERISTICS RISING EDGE DYNAMIC CHARACTERISTICS RISING EDGE DYNAMIC CHARACTERISTICS Min V O = V Min V O =.5 V Time s Time s Figure Figure 5 FALLING EDGE DYNAMIC CHARACTERISTICS Min V O = V FALLING EDGE DYNAMIC CHARACTERISTICS Min V O =.5 V Time s Time s Figure 6 Figure 7 The LUMENOLOGY Company Copyright 7, TAOS Inc. 5

6 TSLS, TSL3S, TSLS TAOS5E SEPTEMBER 7 TSL3S TYPICAL CHARACTERISTICS RISING EDGE DYNAMIC CHARACTERISTICS Min V O = V RISING EDGE DYNAMIC CHARACTERISTICS Min V O =.5 V 6 6 Time s 8 Time s Figure 8 Figure 9 FALLING EDGE DYNAMIC CHARACTERISTICS 3 Min V O = V FALLING EDGE DYNAMIC CHARACTERISTICS 3 Min V O =.5 V 5 5 Time s 5 Time s Figure Figure Copyright 7, TAOS Inc. The LUMENOLOGY Company 6

7 TSLS, TSL3S, TSLS TAOS5E SEPTEMBER 7 TSLS TYPICAL CHARACTERISTICS 5 RISING EDGE DYNAMIC CHARACTERISTICS Min V O = V 5 RISING EDGE DYNAMIC CHARACTERISTICS Min V O =.5 V Time s 3 Time s Figure Figure 3 FALLING EDGE DYNAMIC CHARACTERISTICS Min V O = V FALLING EDGE DYNAMIC CHARACTERISTICS Min V O =.5 V 8 8 Time s 6 Time s Figure Figure 5 The LUMENOLOGY Company Copyright 7, TAOS Inc. 7

8 TSLS, TSL3S, TSLS TAOS5E SEPTEMBER 7 APPLICATION INFORMATION PCB Pad Layout Suggested PCB pad layout guidelines for the SM surface mount package are shown in Figure NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. Figure 6. Suggested SM Package PCB Layout Copyright 7, TAOS Inc. The LUMENOLOGY Company 8

9 TSLS, TSL3S, TSLS TAOS5E SEPTEMBER 7 MECHANICAL DATA The TSLS, TSL3S, and TSLS are supplied in a clear 3-lead through-hole package with a molded lens. PACKAGE S PLASTIC SINGLE-IN-LINE SIDE-LOOKER PACKAGE TOP VIEW.6.6 R.9.6 FRONT VIEW SIDE VIEW Note B Pb.7 TYP Lead Free Available. NOTES: A. All linear dimensions are in millimeters; tolerance is ±.5 mm unless otherwise stated. B. Dimension is to center of lens arc, which is located below the package face. C. The.5 mm.5 mm integrated photodiode active area is typically located in the center of the lens and.97 mm below the top of the lens surface. D. Index of refraction of clear plastic is.55. E. Lead finish for TSLxS: solder dipped, 63% Sn/37% Pb. Lead finish for TSLxS LF: solder dipped, % Sn. F. This drawing is subject to change without notice. Figure 7. Package S Single-In-Line Side-Looker Package Configuration The LUMENOLOGY Company Copyright 7, TAOS Inc. 9

10 TSLS, TSL3S, TSLS TAOS5E SEPTEMBER 7 MECHANICAL DATA PACKAGE SM PLASTIC SURFACE MOUNT SIDE-LOOKER PACKAGE TOP VIEW.6.6 R.9.6 FRONT VIEW SIDE VIEW.3.5 Note B TYP Pb Lead Free. NOTES: A. All linear dimensions are in millimeters; tolerance is ±.5 mm unless otherwise stated. B. Dimension is to center of lens arc, which is located below the package face. C. The integrated photodiode active area is typically located in the center of the lens and.97 mm below the top of the lens surface. D. Index of refraction of clear plastic is.55. E. Lead finish for TSLxSM LF: solder dipped, % Sn. F. This drawing is subject to change without notice. Figure 8. Package SM Surface Mount Side-Looker Package Configuration Copyright 7, TAOS Inc. The LUMENOLOGY Company

11 TSLS, TSL3S, TSLS TAOS5E SEPTEMBER 7 PRODUCTION DATA information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters. LEAD-FREE (Pb-FREE) and GREEN STATEMENT Pb-Free (RoHS) TAOS terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed.% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed.% by weight in homogeneous material). Important Information and Disclaimer The information provided in this statemenepresents TAOS knowledge and belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TAOS has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. NOTICE Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems. TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER S RISK. LUMENOLOGY, TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are registered trademarks of Texas Advanced Optoelectronic Solutions Incorporated. The LUMENOLOGY Company Copyright 7, TAOS Inc.

12 TSLS, TSL3S, TSLS TAOS5E SEPTEMBER 7 Copyright 7, TAOS Inc. The LUMENOLOGY Company

TSL260R, TSL261R, TSL262R INFRARED LIGHT-TO-VOLTAGE OPTICAL SENSORS

TSL260R, TSL261R, TSL262R INFRARED LIGHT-TO-VOLTAGE OPTICAL SENSORS Integral Visible Light Cutoff Filter Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback Components Converts Light Intensity to a Voltage High Irradiance Responsivity, Typically

More information

TSL250, TSL251, TLS252 LIGHT-TO-VOLTAGE OPTICAL SENSORS

TSL250, TSL251, TLS252 LIGHT-TO-VOLTAGE OPTICAL SENSORS TSL50, TSL5, TLS5 SOES004C AUGUST 99 REVISED NOVEMBER 995 Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback Components Converts Light Intensity to Output Voltage High Irradiance

More information

TCS230 PROGRAMMABLE COLOR LIGHT TO FREQUENCY CONVERTER TAOS046 - FEBRUARY 2003

TCS230 PROGRAMMABLE COLOR LIGHT TO FREQUENCY CONVERTER TAOS046 - FEBRUARY 2003 High-Resolution Conversion of Light Intensity to Frequency Programmable Color and Full-Scale Output Frequency Communicates Directly With a Microcontroller Single-Supply Operation (2.7 V to 5.5 V) Power

More information

TCS3200, TCS3210 PROGRAMMABLE COLOR LIGHT-TO-FREQUENCY CONVERTER TAOS099 JULY 2009

TCS3200, TCS3210 PROGRAMMABLE COLOR LIGHT-TO-FREQUENCY CONVERTER TAOS099 JULY 2009 High-Resolution Conversion of Light Intensity to Frequency Programmable Color and Full-Scale Output Frequency Communicates Directly With a Microcontroller Single-Supply Operation (2.7 V to 5.5 V) Power

More information

ams AG TAOS Inc. is now The technical content of this TAOS datasheet is still valid. Contact information:

ams AG TAOS Inc. is now The technical content of this TAOS datasheet is still valid. Contact information: TAOS Inc. is now The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 (0) 3136 500 0 e-mail: ams_sales@ams.com

More information

TSL213 64 1 INTEGRATED OPTO SENSOR

TSL213 64 1 INTEGRATED OPTO SENSOR TSL 64 INTEGRATED OPTO SENSOR SOES009A D4059, NOVEMBER 99 REVISED AUGUST 99 Contains 64-Bit Static Shift Register Contains Analog Buffer With Sample and Hold for Analog Output Over Full Clock Period Single-Supply

More information

Silicon PIN Photodiode

Silicon PIN Photodiode VEMD940F Silicon PIN Photodiode DESCRIPTION VEMD940F is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is

More information

Silicon PIN Photodiode

Silicon PIN Photodiode Silicon PIN Photodiode DESCRIPTION 94 8632 is a PIN photodiode with high speed and high radiant sensitivity in a clear, side view plastic package. It is sensitive to visible and near infrared radiation.

More information

10 ma LED driver in SOT457

10 ma LED driver in SOT457 SOT457 in SOT457 Rev. 1 20 February 2014 Product data sheet 1. Product profile 1.1 General description LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457

More information

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1. Rev. 6 4 September 04 Product data sheet. Product profile. General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package Configuration

More information

TSL2550 AMBIENT LIGHT SENSOR WITH SMBus INTERFACE TAOS029L OCTOBER 2007

TSL2550 AMBIENT LIGHT SENSOR WITH SMBus INTERFACE TAOS029L OCTOBER 2007 Converts Light Intensity to Digital Signal Infrared Compensation to Approximate Human Eye Response Companding A/D for Wide Dynamic Range Rejects 50 Hz/60 Hz Lighting Ripple Two-Wire SMBus Serial Interface

More information

Silicon PIN Photodiode

Silicon PIN Photodiode Silicon PIN Photodiode DESCRIPTION 94 8583 BPW34 is a PIN photodiode with high speed and high radiant sensitivity in miniature, flat, top view, clear plastic package. It is sensitive to visible and near

More information

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package

More information

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW DESCRIPTION is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed,

More information

Preamplifier Circuit for IR Remote Control

Preamplifier Circuit for IR Remote Control Preamplifier Circuit for IR Remote Control 22906 FEATURES Carrier-out-function: carrier frequency and burst length accurately correspond to the input signal AC coupled response from 20 khz to 60 khz; all

More information

Medium power Schottky barrier single diode

Medium power Schottky barrier single diode Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated

More information

SN28838 PAL-COLOR SUBCARRIER GENERATOR

SN28838 PAL-COLOR SUBCARRIER GENERATOR Solid-State Reliability Surface-Mount Package NS PACKAE (TOP VIEW) description The SN28838 is a monolithic integrated circuit designed to interface with the SN28837 PALtiming generator in order to generate

More information

ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection

ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The ESD9X Series is designed to protect voltage sensitive components from ESD. Excellent

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output Reflective Optical Sensor with Transistor Output CNY7 Description The CNY7 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E

More information

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description SOT2 Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted

More information

IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC 61000-4-2 level 4. 1.1 General description. 1.2 Features. 1.

IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC 61000-4-2 level 4. 1.1 General description. 1.2 Features. 1. Rev. 01 16 April 2009 Product data sheet 1. Product profile 1.1 General description The is designed to protect Input/Output (I/O) USB 2.0 ports, that are sensitive to capacitive loads, from being damaged

More information

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs TSAL64 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 94 8389 TSAL64 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic

More information

Features. Case: TO-220-3 (2), TO-220F-3 (Option 1), TO-252-2 (1) and TO- 263-2 Power Management Instrumentation

Features. Case: TO-220-3 (2), TO-220F-3 (Option 1), TO-252-2 (1) and TO- 263-2 Power Management Instrumentation HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According

More information

CAN bus ESD protection diode

CAN bus ESD protection diode Rev. 04 15 February 2008 Product data sheet 1. Product profile 1.1 General description in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller

More information

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices

More information

INTEGRATED CIRCUITS. 74F153 Dual 4-line to 1-line multiplexer. Product specification 1996 Jan 05 IC15 Data Handbook

INTEGRATED CIRCUITS. 74F153 Dual 4-line to 1-line multiplexer. Product specification 1996 Jan 05 IC15 Data Handbook INTEGRATED CIRCUITS 1996 Jan 05 IC15 Data Handbook FEATURES Non-inverting outputs Separate enable for each section Common select inputs See 74F253 for 3-State version PIN CONFIGURATION Ea 1 S1 2 I3a 3

More information

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package ILD25T, ILD26T, ILD27T, ILD211T, ILD213T Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package i17925 A1 C2 A3 C4 i17918-2 8C 7E 6C 5E DESCRIPTION The ILD25T, ILD26T, ILD27T, ILD211T, and ILD213T

More information

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H)

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H) MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM3K335R SSM3K335R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : R DS(ON)

More information

1 TO 4 CLOCK BUFFER ICS551. Description. Features. Block Diagram DATASHEET

1 TO 4 CLOCK BUFFER ICS551. Description. Features. Block Diagram DATASHEET DATASHEET 1 TO 4 CLOCK BUFFER ICS551 Description The ICS551 is a low cost, high-speed single input to four output clock buffer. Part of IDT s ClockBlocks TM family, this is our lowest cost, small clock

More information

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection 4-Line Ultra-Large Bandwidth ESD Protection Functional Description The ESD7484 chip is a monolithic, application specific discrete device dedicated to ESD protection of the HDMI connection. It also offers

More information

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSFF55 High Speed Infrared Emitting Diode, 87 nm, GaAlAs Double Hetero 26 DESCRIPTION TSFF55 is an infrared, 87 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high

More information

DATA SHEET. TDA8560Q 2 40 W/2 Ω stereo BTL car radio power amplifier with diagnostic facility INTEGRATED CIRCUITS. 1996 Jan 08

DATA SHEET. TDA8560Q 2 40 W/2 Ω stereo BTL car radio power amplifier with diagnostic facility INTEGRATED CIRCUITS. 1996 Jan 08 INTEGRATED CIRCUITS DATA SHEET power amplifier with diagnostic facility Supersedes data of March 1994 File under Integrated Circuits, IC01 1996 Jan 08 FEATURES Requires very few external components High

More information

40 V, 200 ma NPN switching transistor

40 V, 200 ma NPN switching transistor Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic

More information

PMEG2020EH; PMEG2020EJ

PMEG2020EH; PMEG2020EJ Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for

More information

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs TSAL51 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 96 1155 TSAL51 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in a blue-gray plastic

More information

MC14008B. 4-Bit Full Adder

MC14008B. 4-Bit Full Adder 4-Bit Full Adder The MC4008B 4bit full adder is constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast

More information

Data sheet acquired from Harris Semiconductor SCHS067B Revised July 2003

Data sheet acquired from Harris Semiconductor SCHS067B Revised July 2003 Data sheet acquired from Harris Semiconductor SCHS067B Revised July 2003 The CD4502B types are supplied in 16-lead hermetic dual-in-line ceramic packages (F3A suffix), 16-lead dual-in-line plastic packages

More information

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW High Power Infrared Emitting Diode, 94 nm, GaAlAs, MQW DESCRIPTION 94 8389 is an infrared, 94 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded

More information

INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug 03. 2003 Feb 14

INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug 03. 2003 Feb 14 INTEGRATED CIRCUITS Supersedes data of 2001 Aug 03 2003 Feb 14 DESCRIPTION The Quad Timers are monolithic timing devices which can be used to produce four independent timing functions. The output sinks

More information

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information Green 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI 5 Product Summary I F V R V F MAX (V) I R MAX (ma) (V) (A) @ +25 C @ +25 C 1 5..71.35 Description and Applications This Schottky Barrier Rectifier

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor 16758-1 VEMT252X1 DESCRIPTION VEMT25X1 VEMT25X1 series are silicon NPN epitaxial planar phototransistors in a miniature dome lens, clear epoxy package for surface mounting.

More information

Schottky barrier quadruple diode

Schottky barrier quadruple diode Rev. 3 8 October 2012 Product data sheet 1. Product profile 1.1 General description with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated

More information

Fiber Optics. Integrated Photo Detector Receiver for Plastic Fiber Plastic Connector Housing SFH551/1-1 SFH551/1-1V

Fiber Optics. Integrated Photo Detector Receiver for Plastic Fiber Plastic Connector Housing SFH551/1-1 SFH551/1-1V Fiber Optics Integrated Photo Detector Receiver for Plastic Fiber Plastic Connector Housing SFH551/1-1 Features Bipolar IC with open-collector output Digital output, TTL compatible Sensitive in visible

More information

P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET Si33DS P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).39 at V GS = -.5 V -.7 -.5 at V GS = -.5 V -..68 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to IEC 69-- Available

More information

BPW34. Silicon PIN Photodiode VISHAY. Vishay Semiconductors

BPW34. Silicon PIN Photodiode VISHAY. Vishay Semiconductors Silicon PIN Photodiode Description The is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5

More information

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (); TIP145, TIP146, TIP147, () Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and low frequency switching applications. Features High DC

More information

PMEG3015EH; PMEG3015EJ

PMEG3015EH; PMEG3015EJ Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for

More information

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1. Rev. 04 30 December 2008 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for

More information

S112-XHS. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information

S112-XHS. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information Description Features The S112-X is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The circuit is composed of one input IR LED with a series limiting resistor

More information

PMEG3005EB; PMEG3005EL

PMEG3005EB; PMEG3005EL Rev. 0 29 November 2006 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress

More information

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching

More information

IR Receiver Module for Light Barrier Systems

IR Receiver Module for Light Barrier Systems Not for New Design - Alternative Available: New TSSP4038 (#82458) www.vishay.com IR Receiver Module for Light Barrier Systems TSOP4038 2 3 MECHANICAL DATA Pinning: = OUT, 2 = GND., 3 = V S 6672 FEATURES

More information

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel

More information

Data Sheet. HLMP-Yxxx T-1 (3 mm) AlInGaP LED Lamps. Description. Features. Applications. Package Dimension

Data Sheet. HLMP-Yxxx T-1 (3 mm) AlInGaP LED Lamps. Description. Features. Applications. Package Dimension HLMP-Yxxx T-1 (3 mm) AlInGaP LED Lamps Data Sheet Description This family of T-1 lamps is widely used in general purpose indicator and back lighting applications. The optical design is balanced to yield

More information

INTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook. 1997 Jun 30

INTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook. 1997 Jun 30 INTEGRATED CIRCUITS IC24 Data Handbook 1997 Jun 30 FEATURES Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1A Inputs accept voltages up to 5.5 V CMOS low power consumption

More information

DATA SHEET. TDA1518BQ 24 W BTL or 2 x 12 watt stereo car radio power amplifier INTEGRATED CIRCUITS

DATA SHEET. TDA1518BQ 24 W BTL or 2 x 12 watt stereo car radio power amplifier INTEGRATED CIRCUITS INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 July 1994 GENERAL DESCRIPTION The is an integrated class-b output amplifier in a 13-lead single-in-line (SIL) plastic power package.

More information

HEF4021B. 1. General description. 2. Features and benefits. 3. Ordering information. 8-bit static shift register

HEF4021B. 1. General description. 2. Features and benefits. 3. Ordering information. 8-bit static shift register Rev. 10 21 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is an (parallel-to-serial converter) with a synchronous serial data input (DS), a clock

More information

Transmissive Optical Sensor with Phototransistor Output

Transmissive Optical Sensor with Phototransistor Output TCST11. up to TCST23. Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face

More information

DDSL01. Secondary protection for DSL lines. Features. Description

DDSL01. Secondary protection for DSL lines. Features. Description Secondary protection for DSL lines Features Stand off voltage: 30 V Surge capability: I pp = 30 A 8/20 µs Low capacitance device: 4.5 pf at 2 V RoHS package Low leakage current: 0.5 µa at 25 C 3 2 Description

More information

SN54HC157, SN74HC157 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

SN54HC157, SN74HC157 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS SNHC, SNHC QUADRUPLE 2-LINE TO -LINE DATA SELECTORS/MULTIPLEXERS SCLSB DECEMBER 982 REVISED MAY 99 Package Options Include Plastic Small-Outline (D) and Ceramic Flat (W) Packages, Ceramic Chip Carriers

More information

Data sheet acquired from Harris Semiconductor SCHS087D Revised October 2003

Data sheet acquired from Harris Semiconductor SCHS087D Revised October 2003 Data sheet acquired from Harris Semiconductor SCHS087D Revised October 2003 The CD4555B and CD4556B types are supplied in 16-lead hermetic dual-in-line ceramic packages (F3A suffix), 16-lead dual-in-line

More information

3-input EXCLUSIVE-OR gate. The 74LVC1G386 provides a 3-input EXCLUSIVE-OR function.

3-input EXCLUSIVE-OR gate. The 74LVC1G386 provides a 3-input EXCLUSIVE-OR function. Rev. 02 3 September 2007 Product data sheet 1. General description The provides a 3-input EXCLUSIVE-OR function. The input can be driven from either 3.3 or 5 V devices. This feature allows the use of these

More information

1-of-4 decoder/demultiplexer

1-of-4 decoder/demultiplexer Rev. 6 1 April 2016 Product data sheet 1. General description 2. Features and benefits 3. Applications The contains two 1-of-4 decoders/demultiplexers. Each has two address inputs (na0 and na1, an active

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth

More information

IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications

IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications MECHANICAL DATA Pinning: = OUT, 2 = GND, 3 = V S 2 3 6672 APPLICATIONS Reflective sensors for hand dryers, towel or

More information

HEF4011B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Quad 2-input NAND gate

HEF4011B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Quad 2-input NAND gate Rev. 6 10 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a quad 2-input NAND gate. The outputs are fully buffered for the highest noise

More information

Quad 2-input NAND Schmitt trigger

Quad 2-input NAND Schmitt trigger Rev. 9 15 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Applications The is a quad two-input NAND gate. Each input has a Schmitt trigger circuit. The gate switches

More information

Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package

Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C

More information

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay

Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay i7966_6 Turn Off FEATURES Open circuit voltage at I F = ma, 8. V typical Short circuit current at I F = ma, 5 μa typical Isolation

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection Optocoupler, Phototransistor Output, with Base Connection FEATURES i794-4 DESCRIPTION This datasheet presents five families of Vishay industry standard single channel phototransistor couplers. These families

More information

DSC1001. Low-Power Precision CMOS Oscillator 1.8~3.3V. Features. General Description. Benefits. Block Diagram

DSC1001. Low-Power Precision CMOS Oscillator 1.8~3.3V. Features. General Description. Benefits. Block Diagram DSC.8~.V LowPower Precision CMOS Oscillator General Description The DSC is a silicon MEMS based CMOS oscillator offering excellent jitter and stability performance over a wide range of supply voltages

More information

Data sheet acquired from Harris Semiconductor SCHS020C Revised October 2003

Data sheet acquired from Harris Semiconductor SCHS020C Revised October 2003 Data sheet acquired from Harris Semiconductor SCHS020C Revised October 2003 The CD4009UB and CD4010B types are supplied in 16-lead hermetic dual-in-line ceramic packages (F3A suffix), 16-lead dual-in-line

More information

CLA4607-085LF: Surface Mount Limiter Diode

CLA4607-085LF: Surface Mount Limiter Diode DATA SHEET CLA4607-085LF: Surface Mount Limiter Diode Applications Low-loss, high-power limiters Receiver protectors Anode (Pin 1) Anode (Pin 3) Features Low thermal resistance: 55 C/W Typical threshold

More information

45 V, 100 ma NPN/PNP general-purpose transistor

45 V, 100 ma NPN/PNP general-purpose transistor Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description

LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal

More information

MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com

MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets

More information

DATA SHEET. TDA1510AQ 24 W BTL or 2 x 12 W stereo car radio power amplifier INTEGRATED CIRCUITS

DATA SHEET. TDA1510AQ 24 W BTL or 2 x 12 W stereo car radio power amplifier INTEGRATED CIRCUITS INTEGRATED CIRCUITS DATA SHEET 24 W BTL or 2 x 12 W stereo car radio File under Integrated Circuits, IC01 January 1992 GENERAL DESCRIPTION The is a class-b integrated output amplifier encapsulated in a

More information

DG2515, DG2516. 3-Ω, 235-MHz Bandwidth, Dual SPDT Analog Switch. Vishay Siliconix. Not for New Design. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS

DG2515, DG2516. 3-Ω, 235-MHz Bandwidth, Dual SPDT Analog Switch. Vishay Siliconix. Not for New Design. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS Not for New Design DG, DG -Ω, -MHz Bandwidth, Dual SPDT Analog Switch DESCRIPTION The DG, DG are low-voltage dual single-pole/ double-throw monolithic CMOS analog switches. Designed to operate from.8 V

More information

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated

More information

MMBZ52xxBLT1G Series, SZMMBZ52xxBLT3G. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

MMBZ52xxBLT1G Series, SZMMBZ52xxBLT3G. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount MMBZ5xxBLTG Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed

More information

CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming

CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming A Constant-Current LED Driver with PWM Dimming Description The CAT4 is a constant current sink driving a string of high brightness LEDs up to A with very low dropout of.5 V at full load. It requires no

More information

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 1 A High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die

More information

UV SMD LED PLCC-2 FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

UV SMD LED PLCC-2 FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. UV SMD LED PLCC-2 VLMU31 19225 DESCRIPTION The package of the VLMU31-series is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled

More information

IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1.

IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1. SOT457 Rev. 5 8 July 2011 Product data sheet 1. Product profile 1.1 General description The is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, Digital Video Interface

More information

Small Optical Encoder Modules 480lpi Digital Output. Features. Applications VCC 3 CHANNEL A 2 CHANNEL B 4 GND 1

Small Optical Encoder Modules 480lpi Digital Output. Features. Applications VCC 3 CHANNEL A 2 CHANNEL B 4 GND 1 HEDS-9730, HEDS-9731 Small Optical Encoder Modules 480lpi Digital Output Data Sheet Description The HEDS-973X is a high performance incremental encoder module. When operated in conjunction with either

More information

Planar PIN diode in a SOD323 very small plastic SMD package.

Planar PIN diode in a SOD323 very small plastic SMD package. Rev. 8 12 May 2015 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD323 very small plastic SMD package. 1.2 Features and benefits High voltage, current controlled

More information

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS Low Capacitance Surface Mount TVS for High-Speed Data terfaces The LC3- transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD, EFT, and lighting.

More information

Ultrabright White LED, Ø 3 mm

Ultrabright White LED, Ø 3 mm Ultrabright White LED, Ø 3 mm DESCRIPTION The VLHW41 series is a clear, untinted 3 mm LED for high end applications where supreme luminous intensity is required. These lamps utilize the highly developed

More information

65 V, 100 ma PNP/PNP general-purpose transistor

65 V, 100 ma PNP/PNP general-purpose transistor Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

PRTR5V0U2F; PRTR5V0U2K

PRTR5V0U2F; PRTR5V0U2K Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devices in leadless ultra small

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 2SA12 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA12 Power Amplifier Applications Power Switching Applications Unit: mm Low Collector saturation voltage: V CE (sat) =.5 V (max) (I C

More information

How To Control A Power Supply On A Powerline With A.F.F Amplifier

How To Control A Power Supply On A Powerline With A.F.F Amplifier INTEGRATED CIRCUITS DATA SHEET Sound I.F. amplifier/demodulator for TV File under Integrated Circuits, IC02 March 1986 GENERAL DESCRIPTION The is an i.f. amplifier with a symmetrical FM demodulator and

More information

NUD4011. Low Current LED Driver

NUD4011. Low Current LED Driver NUD0 Low LED Driver This device is designed to replace discrete solutions for driving LEDs in AC/DC high voltage applications (up to 00 V). An external resistor allows the circuit designer to set the drive

More information

74HCU04. 1. General description. 2. Features and benefits. 3. Ordering information. Hex unbuffered inverter

74HCU04. 1. General description. 2. Features and benefits. 3. Ordering information. Hex unbuffered inverter Rev. 7 8 December 2015 Product data sheet 1. General description The is a hex unbuffered inverter. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to

More information

74HC02; 74HCT02. 1. General description. 2. Features and benefits. Ordering information. Quad 2-input NOR gate

74HC02; 74HCT02. 1. General description. 2. Features and benefits. Ordering information. Quad 2-input NOR gate Rev. 5 26 November 2015 Product data sheet 1. General description 2. Features and benefits The is a quad 2-input NOR gate. Inputs include clamp diodes. This enables the use of current limiting resistors

More information

SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode

SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode DATA SHEET SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode Applications Sensitive RF and microwave detector circuits Sampling and mixer circuits High volume wireless systems

More information

TYPICAL APPLICATION CIRCUIT. ORDER INFORMATION SOP-EP 8 pin A703EFT (Lead Free) A703EGT (Green)

TYPICAL APPLICATION CIRCUIT. ORDER INFORMATION SOP-EP 8 pin A703EFT (Lead Free) A703EGT (Green) www.addmtek.com 2 CHANNELS 150mA HIGH VOLTAGE ADJUSTABLE CURRENT REGULATOR DESCRIPTION A703 is a high voltage, adjustable constant current driver for LED applications. Two regulated current ports are designed

More information