N-Channel 40-V (D-S), 175 C MOSFET

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1 N-Channel 4-V (D-S), 75 C MOSFET SUD5N4-6P PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, c Q g (Typ.) 6 at V GS = V nc 8 at V GS = 4.5 V 2 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS LCD TV Inverter Secondary Synchronous Rectification RoHS COMPLIANT TO-252 D Drain Connected to Tab G G D S Top View Ordering Information: SUD5N4-6P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS 4 V Gate-Source Voltage V GS ± 6 T C = 25 C 2 c T Continuous Drain Current (T J = 5 C) C = C 2 c I D T A = 25 C 9.8 b T A = C 6.8 b A Pulsed Drain Current I DM 5 T Continuous Source-Drain Diode Current C = 25 C 2 c I S T A = 25 C 2.5 b Single Pulse Avalanche Current I AS 2 L =. mh Avalanche Energy E AS 2 mj T C = 25 C 35.7 T Maximum Power Dissipation C = C 7.8 P D W T A = 25 C 3. b T A = C.5 b Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b Steady State R thja 4 5 C/W Maximum Junction-to-Case Steady State R thjc Notes: a. Based on T C = 25 C. b. Surface Mounted on " x " FR4 board. c. Package limited. S-8956-Rev. B, 25-Aug-8

2 SUD5N4-6P SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 25 µa 4 V V DS Temperature Coefficient ΔV DS /T J 38 I D = 25 µa V GS(th) Temperature Coefficient ΔV GS(th) /T J mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25 µa V Gate-Source Leakage I GSS V DS = V, V GS = ± 6 V ± na V Zero Gate Voltage Drain Current I DS = 4 V, V GS = V DSS V DS = 4 V, V GS = V, T J = C 2 µa On-State Drain Current a I D(on) V DS 5 V, V GS = V 3 A Drain-Source On-State Resistance a V R GS = V, I D = 5 A 25 6 DS(on) V GS = 4.5 V, I D = A 4 8 Ω Forward Transconductance a g fs V DS = 5 V, I D = 5 A 58 S Dynamic b Input Capacitance C iss 655 Output Capacitance C oss V DS = 2 V, V GS = V, f = MHz 2 pf Reverse Transfer Capacitance C rss 52 V DS = 2 V, V GS = V, I D = 3 A Total Gate Charge Q g nc Gate-Source Charge Q gs V DS = 2 V, V GS = 4.5 V, I D = 3 A 4.2 Gate-Drain Charge Q gd 5.5 Gate Resistance R g f = MHz Ω Turn-On Delay Time t d(on) 9 3 Rise Time t r V DD = 2 V, R L =.66 Ω 2 8 Turn-Off Delay Time t d(off) I D 3 A, V GEN = 4.5 V, R g = Ω 4 6 Fall Time t f Turn-On Delay Time t d(on) 8 6 ns Rise Time t r V DD = 2 V, R L =.66 Ω Turn-Off Delay Time t d(off) I D 3 A, V GEN = V, R g = Ω Fall Time t f 8 6 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 C 2 Pulse Diode Forward Current a I SM 5 A Body Diode Voltage V SD I S = A.84.2 V Body Diode Reverse Recovery Time t rr ns Body Diode Reverse Recovery Charge Q rr nc I F = 2 A, di/dt = A/µs, T J = 25 C Reverse Recovery Fall Time t a 5 ns Reverse Recovery Rise Time t b Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 S-8956-Rev. B, 25-Aug-8

3 SUD5N4-6P 8 V GS = thru 4 V.6 ID - Drain Current (A) V - Drain Current (A) I D.2.8 T C = 25 C C 2 3 V DS - Drain-to-Source Voltage (V) Output Characteristics 2-55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics.2 gfs - Transconductance (S) C T C = - 55 C 25 C - On-Resistance (Ω) R DS(on) V GS = 4.5 V V GS = V I D - Drain Current (A) Transconductance I D - Drain Current (A) On-Resistance vs. Drain Current 25 - On-Resistance (Ω) R DS(on) C 25 C C - Capacitance (pf) C oss C iss V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage C rss V DS - Drain-to-Source Voltage (V) Capacitance S-8956-Rev. B, 25-Aug-8 3

4 SUD5N4-6P - Gate-to-Source Voltage (V) V GS I D = 3 A V DS = V V DS = 2 V V DS = 3 V R DS(on) - On-Resistance (Normalized) I D = 5 A V GS = 4.5 V V GS = V Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.5 T J = 5 C.2 - Source Current (A) I S. T J = 25 C V GS(th) (V) I D = 25 µa I D = 5 ma V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage T J - Temperature ( C) Threshold Voltage 8 8 Power (W) 6 4 Power (W) Time (s) Single Pulse Power, Junction-to-Ambient.. Time (s) Single Pulse Power, Junction-to-Case 4 S-8956-Rev. B, 25-Aug-8

5 SUD5N4-6P Limited by R DS(on)* Limited by R DS(on)* - Drain Current (A) I D. µs ms ms ms s DC ID - Drain Current (A). T C = 25 C Single Pulse µs ms ms ms s T A = 25 C Single Pulse. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case I D - Drain Current (A) 7 4 ID - Drain Current (A) 9 3 Package Limited T A - Ambient Temperature ( C) Current Derating**, Junction-to-Ambient T C - Case Temperature ( C) Current Derating**, Junction-to-Case ** The power dissipation P D is based on T J(max) = 75 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S-8956-Rev. B, 25-Aug-8 5

6 SUD5N4-6P Power (W).8.2 Power (W) T A - Ambient Temperature ( C) T C - Case Temperature ( C) Power Derating*, Junction-to-Ambient Power Derating*, Junction-to-Case * The power dissipation P D is based on T J(max) = 75 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 6 S-8956-Rev. B, 25-Aug-8

7 SUD5N4-6P Normalized Effective Transient Thermal Impedance Duty Cycle =.5.2 Notes:.. P DM t.5 t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 45 C/W.2 3. T JM - T A = P DM Z (t) thja Single Pulse 4. Surface Mounted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S-8956-Rev. B, 25-Aug-8 7

8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 3-Jun-6 Document Number: 9

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