Octave Remote Resistor-programmable Temperature Switches AP2602. Features

Transcription

1 General Description The AP2602 are fully integrated, resistor programmable octave remote temperature switches with selectable external/internal trigger voltages setting. The thresholds are set by external resistors and thermistors with negative temperature coefficient. The AP2602 provides 4 open-drain, active low, over-temperature outputs for each 2 sensors. These switches operate with a 2.7V to 5.5V single supply. The AP2602 are available in 16-pin QFN-3X3-16 package. Features 8 Remote Temperature Switches Set by Thermistor and External Resistors 4 Open-drain Active Low Output Stages for Each 2 Temperature Switches Selectable External/Internal Trigger Voltages Setting Built-in Hysteresis Temperature when Using Internal Setting Trigger Voltage Guaranteed Output Signal Valid to =0.8V QFN-3X3-16 Package Applications µp Temperature Monitoring High-speed Computers Temperature Control Temperature Alarms Fan Control Automotives QFN-3X3-16 Figure 1. Package Type of AP2602 1

2 Pin Configuration FN Package (QFN-3X3-16) Pin 1 Mark TMSNS4 OT34 TMSNS3 TMSNS VTRIG 1 12 OT12 VCC GND 2 3 EP 11 TMSNS1 TMSNS8 SEL OT78 TMSNS5 OT56 TMSNS6 TMSNS7 Note 1: Recommend connecting the thermal pad to GND for excellent power dissipation. Figure 2. Pin Configuration of AP2602 (Top View) Pin Description Pin Pin Number Name Function 1 VTRIG Input of external setting trigger voltage 2 VCC Power-supply input 3 GND Ground 4 SEL Connect SEL to GND to select external trigger voltage, while connecting SEL to VCC to select internal trigger voltage. Don t leave the pin floating 5,7,8,, Connect an external 1% resistor from TMSNSX to GND to set trigger point TMSNSX 11,13,14,16 of remote temperature sensorx Open-Drain, active low, over-temperature output for sensor 1, 2, sensor 3, 6,9,12,15 OTXY 4, sensor 5, 6, sensor 7, 8 respectively. The OTXY outputs are the wire-or results of sensorx and sensory 2

3 Functional Block Diagram VTRIG SEL VCC TMSNS1 11 CMP Deglitch Logic OT12 CMP with Hysteresis 12 VREF 15 CMP 6 TMSNS2 TMSNS & VREF CMP with Hysteresis Deglitch Logic & 9 OT78 3 GND Figure 3. Functional Block Diagram of AP2602 3

4 Ordering Information AP Circuit Type Package FN: QFN-3X3-16 G1: Green TR: Tape & Reel Package Temperature Range Part Number Marking ID Packing Type QFN-3X to 125 C AP2602FNTR-G1 B2E Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Absolute Maximum Ratings (Note 2) Parameter Symbol Value Unit Supply Voltage -0.3 to 6 V OTXY Voltage V OT -0.3 to 6 V TMSNSX, VTRIG Voltage, V TRIG -0.3 to +0.3 V SEL Voltage -0.3 to 6 V Output Current (All Pins) 20 ma Input Current (All Pins) 20 ma Operating Junction Temperature T J 150 C Storage Temperature Range T STG -65 to 150 C Lead Temperature (Soldering, seconds) T LEAD 260 C Thermal Resistance θ JA QFN-3X C/W ESD (Machine Model) 200 V ESD (Human Body Model) 2000 V Note 2: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. 4

5 Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage V Operating Ambient Temperature Range T A C Electrical Characteristics =2.7V to 5.5V, T A =-40 C to 125 C, unless otherwise specified. Typical values are at T A =25 C. Parameter Symbol Conditions Min Typ Max Units Supply Voltage V Supply Current I CC = 40 0 OTXY float =GND 55 1 µa TMSNSX Threshold Input V TH / =5V, =, V TH / , =, V TH / V/V VTRIG Input Range V TRIG 0<V TRIG < Offset Voltage between VTRIG and TMSNSX SEL Input Voltage Open-drain OTXY Output Sink Current Open-drain OTXY Output Leakage Current 0.4 V OS =5V, =GND mv V IH =5V 2 V V IL =5V 1 V I SINK V OT =0.3V, =0V ma I LEAK-OT V OT =, =5V 1 µa Thermal Resistance θ JC QFN-3X C/W V 5

6 Typical Performance Characteristics Supply Current (µa) = =0V Supply Current (µa) =GND,V TRIG =1V =0V Case Temperature ( o C) Case Temperature ( o C) Figure 4. Supply Current vs. Case Temperature Figure 5. Supply Current vs. Case Temperature Supply Current (µa) = =-40 o C =25 o C =150 o C Supply Current (µa) =GND =0V =-40 o C =25 o C =150 o C Supply Voltage (V) Supply Voltage (V) Figure 6. Supply Current vs. Supply Voltage Figure 7. Supply Current vs. Supply Voltage 6

7 Typical Performance Characteristics (Continued) TMSNSX Input Threshold (V TH / ) Case Temperature ( o C) = =5V Offset Voltage between VTRIG and TMSNSX (mv) =GND V TRIG =1V =5V Case Temperature ( o C) Figure 8. TMSNSX Input Threshold (V TH / ) vs. Case Temperature Figure 9. Offset Voltage between VTRIG and TMSNSX vs. Case Temperature V TMSNS1 OTXY Sink Current (ma) =5V = =0V =-40 o C =25 o C =150 o C V TMSNS2 V OT OTXY Voltage (V) Time (µs/div) Figure. Open-drain OTXY Output Sink Current Figure 11. Deglitch time to OT High (VSEL = ) vs. OTXY Voltage (Conditions: VCC =5V, V TMSNS1 =0.5V to 3V, V TMSNS2 =2.5V) 7

8 Typical Performance Characteristics (Continued) V TMSNS1 V TMSNS2 V TMSNS1 V TMSNS2 V OT12 V OT12 Time (50µs/div) Time (µs/div) Figure 12. Deglitch time to OT Low ( = ) Figure 13. Deglitch time to OT High ( =GND) (Conditions: =5V, V TMSNS1 =0.5V to 3V, (Conditions: =5V, V TMSNS1 =0.5V to 3V, V TMSNS2 =2.5V) V TMSNS2 =2.5V, V TRIG =1V) V TMSNS1 V TMSNS2 V OT12 Time (50µs/div) Figure 14. Deglitch Time to OT Low ( =GND) (Conditions: =5V, V TMSNS1 =0.5V to 3V, V TMSNS2 =2.5V, V TRIG =1V) 8

9 Typical Application Mode A Figure 15. Typical Application of AP2602 (Mode A) 9

10 Typical Application (Continued) Mode B R SET8 R SET2 R SET1 2 VCC 0k 0k 0k 0k 11 TMSNS1 OT12 12 VCC 13 TMSNS2 AP2602 OT34 OT µp TMSNS8 OT78 9 GND 1 VTRIG Thermistor 4 SEL GND 3 Figure 16. Typical Application of AP2602 (Mode B)

11 Mechanical Dimensions QFN Unit: mm(inch) 2.900(0.114) 3.0(0.122) 11

12 IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD - Headquarters Semiconductor Manufacturing Limited - Wafer BCD FabSemiconductor Manufacturing Limited BCD - Wafer Semiconductor Fab Manufacturing Limited Shanghai - IC Design SIM-BCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 1600, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Limited Industrial Park, , China 800 Yi Advanced Shan Road, Analog Shanghai Circuits , (Shanghai) China Corporation Tel: 800, , Yi Shan Road, Shanghai Fax: , China Tel: F, Zone B, 900, 1491, Yi Fax: Shan Road, Shanghai , China Tel: , Fax: Tel: , Fax: REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIM-BCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Unit A Room SIM-BCD 1203, Skyworth Semiconductor Bldg., Gaoxin Manufacturing Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office Advanced China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited 4F, 298-1, BCD Rui Semiconductor Guang Road, (Taiwan) Nei-Hu District, Company Taipei, Limited Taiwan 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD Semiconductor Huntwood Ave. Corporation Hayward, CA 94544, Huntwood USA Ave. Hayward, Room Tel: E, 5F, Noble 7951 Center, No.06, 3rd Fuzhong Road, Futian District, Shenzhen , China Tel: Taiwan 2808 CA Tel : 94544, U.S.A Tel: Fax: Fax: Fax: Tel: Fax: Tel Fax: : Fax: