The 5th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium), Nov , 2008, Kona, Hawaii, USA
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1 The 5th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium), Nov , 2008, Kona, Hawaii, USA Si CMP with a sealed Bell-Jar type CMP machine - Processing characteristics of Si-CMP, influenced by the processing atmosphere and additives dispersed in the slurry - Takeharu Kihara 1*, a, Toshiro K. Doi 1, b, Syuhei Kurokawa 1, c, Yota Oki 1, d, Yoji Umezaki 1, e, Yoji Matsukawa 1, f, Koichiro Ichikawa 2, g, Isamu Koshiyama 3, h, and Hiroyuki Kono 1&4, i 1 Department of Mechanical Engineering, Faculty of Engineering, Kyushu University, 744, Motooka, Nishi-ku, Fukuoka , Japan 2 Fujikoshi Machinery Corporation 1650 Kiyono, Matsushiro, Nagano , Japan 3 The Koshiyama Science & Technology Foundation 55, Nakasumiyoshi-cho, Kakamigahara, Gifu , Japan 4 Tokuyama Corporation Shibuya Konno Bldg. 3-1, Shibuya 3-chome, Shibuya-ku, Tokyo , Japan a te207350@s.kyushu-u.ac.jp, b doi-t@mech.kyushu-u.ac.jp, c kurobe-@mech.kyushu-u.ac.jp, d te208373@s.kyushu-u.ac.jp, e umezaki@mech.kyushu-u.ac.jp, f y-matsu@mech.kyushu-u.ac.jp, g ichikawa@fmc-fujikoshi.co.jp, h isamu136@pastel.ocn.ne.jp, i h-kouno@tokuyama.co.jp Abstract CMP (Chemical Mechanical Polishing) in the fabrication process of electronic devices has been recognized as a mainstream processing technology to achieve highly efficient, high precision planalization of silicon (Si) wafers. We investigated CMP characteristics, focusing on the processing atmosphere, such as gas and pressure, around the workpiece. In this study, we used a CMP machine encased in a pressure-tight sealed chamber (namely, Bell-Jar type CMP machine) that controls processing atmosphere. By placing a priority on the CMP efficiency (i.e. high removal rate) in particular, we set up a virtual model of substitution reaction CMP to obtain an effective way that evokes substitution reactions during polishing. As a result, when the oxygen pressure in the sealed Bell-Jar was raised to 500kPa, the polishing rate increased 1.5 times as that of the conventional CMP. The XPS analysis of the processed Si surfaces shows the presence of some Zn element on the Si surfaces. This result suggests that processing in a high pressure oxygen atmosphere promotes a chemical reaction between zinc and silicon, resulting in a drastic improvement of polishing rate. Keywords: CMP, atmosphere control, Bell-Jar type CMP machine, removal rate Introduction CMP in the fabrication process of electronic devices has been recognized as a mainstream processing technology to realize highly efficient, high precision planarization of Si wafers. We investigated CMP characteristics by focusing on the processing atmosphere such as gas and pressure around the workpiece. For the purpose of controlling atmosphere around the workpiece, we applied a Bell-Jar type CMP machine comprising a pressure-tight sealed chamber (called Bell-Jar ) that controls processing atmosphere (Fig. 1 and table 1).
2 Fig.1 Outline installation drawing and exterior appearance of a Bell-Jar type CMP machine Table 1 Basic specifications of Bell-Jar type CMP machine Machine size 600 W 600 D 750 H Platen :material :size :rotation speed Stainless steel 250 mm 5~90 min -1 Size of workpiece ~ 3 inches Processing pressure Method of deadweight Way of holding workpiece Two point guide roller type Way of supplying slurry to polishing pad circulation method Gas pressure inside the Bell-Jar -100~1000 kpa(gauge) Available gas Air, O 2, N 2, Ar, NH 3 Experimental In the conventional Si wafer CMP, alkaline colloidal silica slurry of sodium hydroxide, amine or ammonia series is used, whereas in this study we used colloidal silica slurry of sodium hydroxide series together with a Bell-Jar type CMP machine. By placing a priority on the CMP efficiency (i.e. high removal rate) in particular, we set up a virtual model of replacement reaction CMP to obtain an effective way that evokes replacement reactions during polishing. Specifically, CMP experiment was performed on Si wafers in the Bell-Jar filled with gases, using a slurry-impregnated pad, and a Cu-Zn alloy retainer ring (hereinafter called RING ) that helps wafer carrier to rotate on its axis contacted (Fig. 2-(i), 2-(ii)). CMP experimental conditions are set up as noted in table 2. Additionally, we performed etching experiment by putting the Si wafer and the slurry in the laboratory dishes and etched for 24 hours in the Bell-Jar filled with gas (Fig. 2-(iii) and table 2) in order to examine how the process atmosphere influences the chemical reaction. Fig. 2 Appearance when processing (i) CMP without RING, (ii) CMP with RING, (iii) Etching in Bell-Jar
3 Table 2 Experimental condition CMP experiment Etching experiment Workpiece Silicon wafer (15-mm-square) Silicon wafer (15-mm-square) Slurry Compol 80 Compol 80 colloidal silica (80 nm), Na series slurry (50 ml in the laboratory dish) Polishing pad unwoven fabric pad Platen rotation speed 90 min -1 Processing time 10 min 24 hour Polishing pressure (Down force) Condition Measurement 49 kpa CMP in Air (0 kpa, 500 kpa) Etch in Air (0 kpa) CMP in O 2 (500 kpa) Etch in O 2 (500 kpa) CMP in N 2 (500kPa) Etch in O 2 (500 kpa) with RING Use electronic balance (resolution capability: 0.01mg) Results and Discussion The CMP test result shows the high oxygen pressure of 500kPa with RING in the sealed Bell-Jar is effective in increasing the polishing rate 1.5 times as that of conventional CMP (Fig.3). In O 2 atmosphere, the removal rate is higher than in air or in N 2 atmosphere regardless of the use of RING. R.R. [ m] 0.4 Compol80 CMP without RING with RING Air Air N 2 O 2 0kPa 500kPa 500kPa 500kPa Fig. 3 Result of CMP Ra: nm Rz: nm Ra: nm Rz: nm Fig.4 AFM image of Si surface after CMP (i) Air (0kPa) without RING, (ii) O 2 (500kPa) with RING
4 stock of etching removal [mg] Compol80 Etching Air 0kPa O 2 500kPa O 2500kPa & RING Fig.5 Result of Etching Watching the surface roughness after CMP by AFM, we compared the CMP polishing in air (0kPa) without RING and the CMP polishing in O 2 (500kPa) with RING (Fig. 4). Although surface roughness of the latter condition was worse than the former, the surface roughness was still good enough for primary polishing. In contrast to the removal rate by CMP, the amount of stock removal by etching decreased when the RING was impregnated with the slurry and the Bell-Jar was filled with the high pressure oxygen (Fig.5). We thought this to be due to the formation of a passivated surface that can be readily removed mechanically but not easily by etching. Thus, we conducted the surface analysis by XPS to substantiate this concept. Comparison of Fig.6-(ii) with Fig6-(i) shows the presence of Zn element on the Si surface when etched with RING Compol80 Etching in O 2 (500kPa) O 1s Intensity (CPS) C LMM O LMM C 1s Si 2sSi 2p Intensity (CPS) Binding Energy (ev) Compol80 Etching in O 2 (500kPa) with RING Na 1s Zn 2p Binding Energy (ev) Fig. 6 XPS analysis (wide scan) (i) surface after etching in O 2 (500kPa), (ii) surface after etching in O 2 (500kPa) with RING
5 Si RING Zn 2+ Cu 2+ Fig. 7 Schematic drawing of a chemical reaction Fig.8 Schematic drawing of wafer surface vicinity (i) without RING (ii) with RING Conclusion From CMP, Etching and XPS analysis result, we developed a polishing model as described below. When silicon atoms combine with oxygen atoms, silicon bonds inside the silicon wafer will be weakened. By contrast, when the surface of silicon wafer is covered with silicon oxide or silicon dioxide, it becomes difficult to etch or elute out due to the formation of etching-resistant film on the surface. Furthermore, the addition of Zn appears to promote the chemical reaction between silicon and oxygen. When zinc exists in the slurry, local high temperature by frictional heat with the polishing pad causes chemical combination of silicon and zinc. The existence of zinc causes chemical combination of silicon, oxygen, sodium and zinc, and the resultant layer will be readily removed by polishing (Fig. 7, 8). These results suggest that the oxygen that permeates in the liquid will effectively promote the polishing. Moreover, Zn promotes a chemical reaction between oxygen and silicon, resulting in a drastic improvement of polishing rate. In a previous study, it was suggested that oxygen promotes an increase in the removal rate of Si CMP. [1] In this research, we suggest that the model we developed can further improve the oxygen effect. We will discuss this model in greater details and will continue to explore more efficient processing conditions. Acknowledgments The authors thank Dr. S. Sawai for their helpful assistance through this work. This work was supported partially by a Grant-in-Aid for Scientific Research (A/No ) from the Ministry of Education, Culture, Sports, Science and Technology of Japan. The authors also express their gratitude to Fujimi Incorporated and to Fujikoshi Machinery Corporation for donation of slurries and CMP machine. REFERENCES [1] T. Doi et al, Electrochemical and Solid-States Letters, 7 (8) G158-G160 (2004)
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