NDT451AN N-Channel Enhancement Mode Field Effect Transistor

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "NDT451AN N-Channel Enhancement Mode Field Effect Transistor"

Transcription

1 February 9 NT45AN N-Channel Enhancement Mode Field Effect Transistor General escription Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as C motor control and C/C conversion where fast switching, low in-line power loss, and resistance to transients are needed. 7.A, 3V. R S(ON) V = V R S(ON) V = 4.5V. High density cell design for extremely low R S(ON). High power and current handling capability in a widely used surface mount package. G S Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter NT45AN Units V SS rain-source Voltage 3 V V S Gate-Source Voltage ± V I rain Current - Continuous (Note a) ± 7. A - Pulsed ± 5 P Maximum Power issipation (Note a) 3 W (Note b).3 (Note c).,t STG Operating and Storage Temperature Range -65 to 5 C THERMAL CHARACTERISTICS R θja Thermal Resistance, Junction-to-Ambient (Note a) 4 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 9 Fairchild Semiconductor Corporation NT45AN Rev.

2 Electrical Characteristics (T A = 5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V = V, I = 5 µa 3 V I SS Zero Gate Voltage rain Current V S = 4 V, V = V µa = 55 C µa I SF Gate - Body Leakage, Forward V = V, V S = V na I SR Gate - Body Leakage, Reverse V = - V, V S = V - na ON CHARACTERISTICS (Note ) V (th) Gate Threshold Voltage V S = V, I = 5 µa.6 3 V = 5 C.7.. R S(ON) Static rain-source On-Resistance V = V, I = 7. A.3.35 Ω = 5 C.4.63 V = 4.5 V, I = 6. A.4.5 = 5 C.58.9 I (on) On-State rain Current V = V, V S = 5 V 5 A V = 4.5 V, V S = 5 V 5 g FS Forward Transconductance V S = V, I = 7. A S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = 5 V, V = V, 7 pf C oss Output Capacitance f =. MHz 37 pf C rss Reverse Transfer Capacitance 5 pf SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time V = V, I = A, ns t r Turn - On Rise Time V GEN = V, R GEN = 6 Ω 3 3 ns t (off) Turn - Off elay Time 9 5 ns t f Turn - Off Fall Time ns Q g Total Gate Charge V S = V, 9 3 nc Q gs Gate-Source Charge I = 7. A, V = V.3 nc Q gd Gate-rain Charge 5.5 nc NT45AN Rev.

3 Electrical Characteristics (T A = 5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATIN I S Maximum Continuous rain-source iode Forward Current.3 A V S rain-source iode Forward Voltage V = V, I S = 7.A (Note ).9.3 V t rr Reverse Recovery Time V = V, I F =.5 A, di F /dt = A/µs ns Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. P (t) = T A = T A = RθJ A(t) RθJ C+RθCA(t) I (t) R S(ON ) TJ Typical R θja using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 4 o C/W when mounted on a in pad of oz copper. b. 95 o C/W when mounted on a.66 in pad of oz copper. c. o C/W when mounted on a.3 in pad of oz copper. a b c Scale : on letter size paper. Pulse Test: Pulse Width < 3µs, uty Cycle <.%. NT45AN Rev.

4 Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A) V =V R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE V = 3.V V S, RAIN-SOURCE VOLTAGE (V) Figure. On-Region Characteristics I, RAIN CURRENT (A) Figure. On-Resistance Variation with Gate Voltage and rain Current..6 R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.4..8 I = 7.A V =V R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE V = V T = 5 C J 5 C -55 C T, JUNCTION TEMPERATURE ( C) J Figure 3. On-Resistance Variation with Temperature I, RAIN CURRENT (A) Figure 4. On-Resistance Variation with rain Current and Temperature. I, RAIN CURRENT (A) V S = V T = -55 C J 5 C 5 C V, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. V th, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE , JUNCTION TEMPERATURE ( C) Figure 6. Gate Threshold Variation with Temperature. V S= V I = 5µA NT45AN Rev.

5 S SS Typical Electrical Characteristics BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = 5µA T J, JUNCTION TEMPERATURE ( C) Figure 7. Breakdown Voltage Variation with Temperature. I, REVERSE RAIN CURRENT (A) 5.. V =V T = 5 C J 5 C -55 C V S, BOY IOE FORWAR VOLTAGE (V) Figure 8. Body iode Forward Voltage Variation with Current and Temperature. CAPACITANCE (pf) 5 5 f = MHz V = V C iss C oss C rss V, GATE-SOURCE VOLTAGE (V) I = 7.A V = 5V S V V V, RAIN TO SOURCE VOLTAGE (V) S Figure 9. Capacitance Characteristics Q g, GATE CHARGE (nc) Figure. Gate Charge Characteristics. g FS, TRANSCONUCTANCE (SIEMENS) V = V S I, RAIN CURRENT (A) T = -55 C J 5 C 5 C Figure. Transconductance Variation with rain Current and Temperature. NT45AN Rev.

6 Typical Thermal Characteristics STEAY-STATE POWER ISSIPATION (W) 3.5 a b c 4.5"x5" FR-4 Board o T A = 5 C Still Air oz COPPER MOUNTING PA AREA (in ) I, STEAY-STATE RAIN CURRENT (A) 8 a b c 4.5"x5" FR-4 Board 4 o T A = 5 C Still Air V = V oz COPPER MOUNTING PA AREA (in ) Figure. SOT-3 Maximum Steady-State Power issipation versus Copper Mounting Pad Area. Figure 3. Maximum Steady-State rain Current versus Copper Mounting Pad Area. 3 5 RS(ON) LIMIT us ms I, RAIN CURRENT (A)...5 V = V SINGLE PULSE R = See Note c T A = 5 C ms s s C ms V S, RAIN-SOURCE VOLTAGE (V) Figure 4. Maximum Safe Operating Area. = r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE Single Pulse P(pk) R (t) = r(t) * R R = See Note c t t - T A = P * R (t) uty Cycle, = t / t t, TIME (sec) Figure 5. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note c. Transient thermal response will change depending on the circuit board design. NT45AN Rev.

7 tm tm tm TRAEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS F-PFS * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. ISCLAIMER FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS O NOT EXPAN THE TERMS OF FAIRCHIL S WORLWIE TERMS AN CONITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PROUCTS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PROUCT STATUS EFINITIONS efinition of Terms FRFET Global Power Resource SM Green FPS Green FPS e-series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak Millerrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PP SPM Power-SPM PowerTrench PowerXS Programmable Active roop QFET QS Quiet Series RapidConfigure Saving our world, mw /W /kw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault etect μseres UHC Ultra FRFET UniFET VCX VisualMax XS. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. atasheet Identification Product Status efinition Advance Information Formative / In esign atasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production atasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I38 NT45AN Rev.

FDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description

FDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description FS6679AZ P-Channel PowerTrench MOSFET -3V, -3A, 9mΩ General escription This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored

More information

Features I-PAK (TO-251AA) T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units

Features I-PAK (TO-251AA) T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units F62A/FU62A 2V N-Channel PowerTrench MOSFET General escription This N-Channel MOSFET has been designed specifically to improve the overall efficiency of C/C converters using either synchronous or conventional

More information

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor November 995 N7 / N7 / NS7A N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary,

More information

Applications. Pin 1 TOP. WL-CSP 0.8X0.8 Thin

Applications. Pin 1 TOP. WL-CSP 0.8X0.8 Thin FDZ66PZ P-Channel.5 V Specified PowerTrench Thin WL-CSP MOSFET - V, -.6 A, 4 mω Features Max r DS(on) = 4 mω at V GS = -4.5 V, I D = - A Max r DS(on) = 8 mω at V GS = -.5 V, I D = -.5 A Max r DS(on) =

More information

Features. I-PAK FQU Series

Features. I-PAK FQU Series 00V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced

More information

Features. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46

Features. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46 N-Channel.8 Vgs Specified PowerTrench MOSFET October 2 General Description This 2V N-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications.

More information

1N5401-1N5408 General-Purpose Rectifiers

1N5401-1N5408 General-Purpose Rectifiers N540 - N5408 General-Purpose Rectifiers Features 3.0 A Operation at T A = 75 C with No Thermal Runaway High Current Capability Low Leakage DO-20AD COLOR BAND DENOTES CATHODE August 205 N540 - N5408 General-Purpose

More information

Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V

Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V FDP26N40 / FDPF26N40 N-Channel MOSFET 400V, 26A, 0.6Ω Features R DS(on) = 0.3Ω ( Typ.)@ V GS = 0V, I D = 3A Low gate charge ( Typ. 48nC) Low C rss ( Typ. 30pF) Fast switching 00% avalanche tested Improved

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted NDSAN N-Channel, Logic Level, PowerTrench MOSFET June NDSAN General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been

More information

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET FQP8N80C/FQPF8N80C/FQPF8N80CYTU 800V N-Channel MOFET General escription These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, MO technology.

More information

FQP5N60C / FQPF5N60C N-Channel QFET MOSFET

FQP5N60C / FQPF5N60C N-Channel QFET MOSFET FQP5N60C / FQPF5N60C N-Channel QFET MOSFET 600 V, 4.5 A,.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology.

More information

S1A - S1M General Purpose Rectifiers

S1A - S1M General Purpose Rectifiers S1A - S1M General Purpose Rectifiers Features 1 AI F(AV) Current Rating Glass Passivated Low Leakage: - 1 μa Maximum at 25 C - 50 μa Maximum at 125 C Fast Response: 1.8 μs (Typical) 30 A Surge Rating 50

More information

D D D G S. E AS Single Pulse Avalanche Energy (Note 4) 337 mj Power Dissipation (Note 1a) 2.5 P D Power Dissipation (Note 1b) 1.

D D D G S. E AS Single Pulse Avalanche Energy (Note 4) 337 mj Power Dissipation (Note 1a) 2.5 P D Power Dissipation (Note 1b) 1. F883NZ N-Channel PowerTrench MOFET 3V, 8.5A, 4.5mΩ Features Max r (on) = 4.5mΩ at V G = V, I = 8.5A Max r (on) = 6.mΩ at V G = 4.5V, I =6A HBM E protection level of 5.6KV typical (note 3) High performance

More information

FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features

FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features F5N50F N-Channel MOFET, FRFET 500V, 3.5A,.55Ω Features R (on) =.25Ω ( Typ.)@ V G = 0V, I =.75A Low gate charge ( Typ. nc) Low C rss ( Typ. 5pF) Fast switching 00% avalanche tested Improved dv/dt capability

More information

Symbol Parameter Ratings Units V DSS Drain-to-Source Voltage 80 V V GS Gate-to-Source Voltage ±20 V Drain Current - Continuous (V

Symbol Parameter Ratings Units V DSS Drain-to-Source Voltage 80 V V GS Gate-to-Source Voltage ±20 V Drain Current - Continuous (V FDBL8636_F85 N-Channel PowerTrench MOSFET 8 V, 3 A,.4 mω Features Typical R DS(on) =. mω at V GS = V, I D = 8 A Typical Q g(tot) = 72 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to

More information

BD135 / 137 / 139 NPN Epitaxial Silicon Transistor

BD135 / 137 / 139 NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features Complement to BD136, BD138 and BD140 respectively Applications Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base August

More information

BUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information

BUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information Data Sheet June 1999 File Number 2253.2 [ /Title (BUZ1 1) /Subject (3A, 5V,.4 Ohm, N- Channel Power MOS- FET) /Autho r () /Keywords (Intersil Corporation, N- Channel Power MOS- FET, TO- 22AB ) /Creator

More information

FSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch

FSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch FSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch Features Typical 6Ω Switch Connection Between Two Ports Minimal Propagation Delay Through the Switch Low I CC Zero Bounce in Flow-Through

More information

MID400 AC Line Monitor Logic-Out Device

MID400 AC Line Monitor Logic-Out Device MID400 AC Line Monitor Logic-Out Device Features Direct operation from any line voltage with the use of an external resistor. Externally adjustable time delay Externally adjustable AC voltage sensing level

More information

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features Switching and Amplifier High-oltage: BC546, CEO = 65 Low-Noise: BC549, BC550 Complement to BC556, BC557, BC558, BC559, and

More information

Applications. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Volage (Note 4) ±20 V

Applications. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Volage (Note 4) ±20 V FMC8 N-Channel PowerTrench MOFET 3 V, 75 A,.3 mω Features Max r (on) =.3 mω at V = V, I = 3 A Max r (on) =.8 mω at V =.5 V, I = 5 A High performance technology for extremely low r (on) Termination is Lead-free

More information

BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor

BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

More information

FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers

FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers April 9 FODM311, FODM31, FODM3, FODM33, FODM35, FODM353 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Features Compact 4-pin surface mount package (.4 mm maximum standoff

More information

Data Sheet September 2004. Features. Packaging

Data Sheet September 2004. Features. Packaging HGTG3N6A4D Data Sheet September 24 6V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG3N6A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs

More information

TSM2N7002K 60V N-Channel MOSFET

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching

More information

N-channel enhancement mode TrenchMOS transistor

N-channel enhancement mode TrenchMOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)

More information

N-Channel 20-V (D-S) 175 C MOSFET

N-Channel 20-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for

More information

0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39)

0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39) *.6 (4.6).9 (2.28).25 (5.2).9 (4.83).45 (.54) Max..4 (.4).35 (8.89).54 (3.9).42 (3.6) ia. PIN S.48 (29.6).8 (28.4) * May be notched or flat.3 (2.87).2 (2.56).635 (6.3).58 (4.73).37 (.94).26 (.66).5 (2.67).95

More information

Features. Symbol JEDEC TO-220AB

Features. Symbol JEDEC TO-220AB Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching

More information

N-Channel 40-V (D-S) 175 C MOSFET

N-Channel 40-V (D-S) 175 C MOSFET N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4

More information

N-Channel 60-V (D-S), 175 C MOSFET

N-Channel 60-V (D-S), 175 C MOSFET N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter

More information

TSM020N03PQ56 30V N-Channel MOSFET

TSM020N03PQ56 30V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q

More information

FSA832 USB 2.0 High-Speed (480 Mbps) Charger Detection IC with Isolation Switch

FSA832 USB 2.0 High-Speed (480 Mbps) Charger Detection IC with Isolation Switch FSA832 USB 2.0 High-Speed (480 Mbps) Charger Detection IC with Isolation Switch Features USB Detection Proprietary Charger and Other Detection Switch Type V BUS Package Ordering Information Applications

More information

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

WFU4N65S Product Description

WFU4N65S Product Description 65V SuperJunction Power MOSFET Features Ultra low Rdson Ultra low gate charge (typ. Qg =3nC) % UIS tested RoHS compliant G General escription Power MOSFET is fabricated using advanced super junction technology.

More information

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

More information

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V

More information

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET 7/7, VQJ/P, BS7 -Channel 6-V (D-S) MOSFET Part umber V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) 7 5 @ V GS = V.8 to. 7 7.5 @ V GS = V to.5.5 VQJ 6 5.5 @ V GS = V.8 to.5.5 VQP 5.5 @ V GS =

More information

STP55NF06L STB55NF06L - STB55NF06L-1

STP55NF06L STB55NF06L - STB55NF06L-1 General features STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II Power MOSFET Type V DSS R DS(on) I D STP55NF06L 60V

More information

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V

More information

Final data. Maximum Ratings Parameter Symbol Value Unit

Final data. Maximum Ratings Parameter Symbol Value Unit SPPN8C3 SPN8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).45 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective

More information

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY

More information

STP10NK80ZFP STP10NK80Z - STW10NK80Z

STP10NK80ZFP STP10NK80Z - STW10NK80Z STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected supermesh TM MOSFET General features Type V DSS R DS(on) I D Pw STP10NK80Z 800V

More information

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast

More information

30 V, single N-channel Trench MOSFET

30 V, single N-channel Trench MOSFET SOT883B Rev. 1 11 May 212 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN16B-3 (SOT883B) Surface-Mounted

More information

IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A

IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive

More information

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance

More information

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V

More information

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000 PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits

More information

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY

More information

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM A M A A December 995 SEMICONDUCTOR RFG7N6, RFP7N6, RFS7N6, RFS7N6SM 7A, 6V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Features 7A, 6V r DS(on) =.4Ω Temperature Compensated PSPICE Model

More information

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel

More information

A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw

A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw IGITL UIO MOSFET P 9673 IRFB565PbF Features Key Parameters Optimized for Class udio mplifier pplications Low R SON for Improved Efficiency Low Q G and Q SW for Better TH and Improved Efficiency Low Q RR

More information

TPN4R712MD TPN4R712MD. 1. Applications. 2. Features. 3. Packaging and Internal Circuit. 2014-12 2015-04-21 Rev.4.0. Silicon P-Channel MOS (U-MOS )

TPN4R712MD TPN4R712MD. 1. Applications. 2. Features. 3. Packaging and Internal Circuit. 2014-12 2015-04-21 Rev.4.0. Silicon P-Channel MOS (U-MOS ) MOSFETs Silicon P-Channel MOS (U-MOS) TPN4R712MD TPN4R712MD 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) Low drain-source on-resistance: R DS(ON) = 3.8 mω (typ.)

More information

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY

More information

Dual P-Channel 2.5 V (G-S) MOSFET

Dual P-Channel 2.5 V (G-S) MOSFET Si593DC Dual P-Channel.5 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).55 at V GS = -.5 V ±.9 -.8 at V GS = - 3.6 V ±.7.6 at V GS = -.5 V ±. FEATURES Halogen-free According to IEC 69-- Definition

More information

Motion-SPM TM. FSBB15CH60BT Smart Power Module. FSBB15CH60BT Smart Power Module. Features. General Description. Applications. Figure 1.

Motion-SPM TM. FSBB15CH60BT Smart Power Module. FSBB15CH60BT Smart Power Module. Features. General Description. Applications. Figure 1. FSBB15CH60BT Smart Power Module Features UL Certified No.E209204(SPM27-CC package) Very low thermal resistance due to using DBC Easy PCB layout due to built in bootstrap diode 600V-15A 3-phase IGBT inverter

More information

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H)

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H) MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM3K335R SSM3K335R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : R DS(ON)

More information

BUK92150-55A. 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids

BUK92150-55A. 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids DPAK 1 June 1 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed

More information

TN2410L, VN2406D/E, VN2410L/LS

TN2410L, VN2406D/E, VN2410L/LS TNL, VN6D/E, VNL/L N-Channel Enhancement-Mode MOFET Transistors Part Number V (BR)D Min (V) r D(on) Max ( ) V (th) (V) (A) TNL @ V =.5 V.5 to.8.8 VN6D 6 @ V = V.8 to. VN6L 6 @ V = V.8 to.8 VNL @ V = V.8

More information

Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)

Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W) PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous

More information

HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω

HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω P - 93757 IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-hanne MOSFET SOT-23 Footprint Low Profie (

More information

IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A

IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize

More information

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching

More information

1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604

1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604 a FEATURES 1 pc Charge Injection (Over the Full Signal Range) 2.7 V to 5.5 V ual Supply 2.7 V to 5.5 ingle Supply Automotive Temperature Range: 4 C to +125 C 1 pa Max @ 25 C Leakage Currents 85 Typ On

More information

V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C

V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency

More information

Rev D, October 1998 1

Rev D, October 1998 1 1 Rev D, October 1998 2 Ω Ω Ω Ω µ Ω Ω 3 = + = + = = + τ 4 Figure 4. Measured FDC6329L Dynamic Waveforms Figure 5. SPICE verification on FDC6329L Dynamic Waveforms Figure 6. SPICE result of FDC6329L V DROP

More information

IRLR8729PbF IRLU8729PbF

IRLR8729PbF IRLU8729PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits

More information

Features Benefits Applications

Features Benefits Applications N9 N-Channel JFET Product Summary V GS(off) (V) V (BR)GSS Min (V) g fs Min SS Min (ma) 5 Features Benefits Applications Excellent High-Frequency Gain: Gps db @ MHz Very Low Noise: db @ MHz Very Low Distortion

More information

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)

More information

SMPS MOSFET. V DSS Rds(on) max I D

SMPS MOSFET. V DSS Rds(on) max I D Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 92004 IRF740A HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits

More information

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 996 Jul BF5A; BF5B; BF5C FEATURES Interchangeability of drain and source connections Frequencies

More information

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET SOT23 Rev. 2 7 November 2 Product data sheet. Product profile. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

45 V, 100 ma NPN/PNP general-purpose transistor

45 V, 100 ma NPN/PNP general-purpose transistor Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

BLL6G1214L-250. 1. Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.

BLL6G1214L-250. 1. Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1. BLL6G1214L-25 Rev. 1 16 February 212 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

More information

HUF75344G3, HUF75344P3, HUF75344S3S

HUF75344G3, HUF75344P3, HUF75344S3S HUF7344G3, HUF7344P3, HUF7344S3S Data Sheet December 24 7A, V,. Ohm, NChannel UltraFET Power MOSFETs These NChannel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process

More information

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 TPC811 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC811 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due

More information

GS66516T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet

GS66516T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Features 650 V enhancement mode power switch Top-side cooled configuration R DS(on) = 25 mω I DS(max) = 60 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements

More information

CMOS 5 V/+5 V 4 Single SPDT Switches ADG619/ADG620

CMOS 5 V/+5 V 4 Single SPDT Switches ADG619/ADG620 a FEATURE (Max) On Resistance. (Max) On Resistance Flatness.7 V to 5.5 ingle upply.7 V to 5.5 V ual upply Rail-to-Rail Operation -Lead OT-3 Package, -Lead MOP Package Typical Power Consumption (

More information

91 P D @T C = 25 C Power Dissipation 330 P D @T C = 100 C Power Dissipation Linear Derating Factor

91 P D @T C = 25 C Power Dissipation 330 P D @T C = 100 C Power Dissipation Linear Derating Factor PD - 9778 IRFB4229PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation in PDP

More information

MM74HCT373 MM74HCT374 3-STATE Octal D-Type Latch 3-STATE Octal D-Type Flip-Flop

MM74HCT373 MM74HCT374 3-STATE Octal D-Type Latch 3-STATE Octal D-Type Flip-Flop 3-STATE Octal D-Type Latch 3-STATE Octal D-Type Flip-Flop General Description The MM74HCT373 octal D-type latches and MM74HCT374 Octal D-type flip flops advanced silicongate CMOS technology, which provides

More information

200V, N-CHANNEL. Absolute Maximum Ratings. Features: www.irf.com 1 PD - 90370

200V, N-CHANNEL. Absolute Maximum Ratings. Features: www.irf.com 1 PD - 90370 PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF240 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFET technology

More information

IDB45E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C

IDB45E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM

More information

IDB04E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 4 A V F 1.65 V T jmax 150 C

IDB04E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 4 A V F 1.65 V T jmax 150 C Fast Switching EmCon Diode Feature 12 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 12 V I F 4 V F 1.65 V T jmax

More information

Si9953DY* Dual P-Channel Enhancement Mode MOSFET 9 '66 'UDLQ6RXUFHÃ9ROWDJH 9 9 *66 *DWH6RXUFHÃ9ROWDJH ± 9 Ã3XOVHG 3 '

Si9953DY* Dual P-Channel Enhancement Mode MOSFET 9 '66 'UDLQ6RXUFHÃ9ROWDJH 9 9 *66 *DWH6RXUFHÃ9ROWDJH ± 9 Ã3XOVHG 3 ' Si9953DY* Dual P-Channel Enhancement Mode MOSFET 0.250 Ω 0.400 Ω ÃÃÃÃÃÃÃ7 $ R &ÃXQOHVVÃRWKHUZLVHÃQRWHG 9 '66 'UDLQ6RXUFHÃ9ROWDJH 9 9 *66 *DWH6RXUFHÃ9ROWDJH ± 9, ' 'UDLQÃ&XUUHQW Ã&RQWLQXRXVÃ ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ1RWHÃD

More information

IDB09E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 9 A V F 1.65 V T jmax 150 C

IDB09E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 9 A V F 1.65 V T jmax 150 C Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 9 V F 1.65 V T

More information

MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer

MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer General Description The MM74C150 and MM82C19 multiplex 16 digital lines to 1 output. A 4-bit address code determines

More information

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED

More information

IRGP4068DPbF IRGP4068D-EPbF

IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature

More information

IDB30E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C

IDB30E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 30 V F 1.65 V T

More information

INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug 03. 2003 Feb 14

INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug 03. 2003 Feb 14 INTEGRATED CIRCUITS Supersedes data of 2001 Aug 03 2003 Feb 14 DESCRIPTION The Quad Timers are monolithic timing devices which can be used to produce four independent timing functions. The output sinks

More information

PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2E MCT20 MCT27 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor

More information

2PD601ARL; 2PD601ASL

2PD601ARL; 2PD601ASL Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.

More information

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS ,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent

More information