SMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor

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1 pplications l Reset Switch for ctive Clamp Reset DC-DC converters SMPS MOSFET PD HEXFET Power MOSFET V DSS R DS(on) max I D -150V = -V -27 Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify Design (See pp. Note N1) l Fully Characterized valanche Voltage and Current G D S TO-220B bsolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage -150 V Gate-to-Source Voltage ± 20 I T C = 25 C Continuous Drain V -27 I T C = C Continuous Drain V -19 I DM Pulsed Drain Current c -1 P C = 25 C Maximum Power Dissipation 250 W Linear Derating Factor 1.6 W/ C dv/dt Peak Diode Recovery dv/dt h 8.2 V/ns T J Operating Junction and -55 to C T STG Storage Temperature Range Soldering Temperature, for seconds 300 (1.6mm from case ) lbf in (1.1N m) Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case g 0.61 C/W R θcs Case-to-Sink, Flat, Greased Surface g 0.50 R θj Junction-to-mbient g 62 Notes through are on page /22/04

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -150 V = 0V, I D = -250µ V (BR)DSS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = -1m R DS(on) Static Drain-to-Source On-Resistance mω = -V, I D = -16 f (th) Gate Threshold Voltage V V DS =, I D = -250µ I DSS Drain-to-Source Leakage Current -25 µ V DS = -120V, = 0V -250 V DS = -120V, = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage - n = -20V Gate-to-Source Reverse Leakage = 20V T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 11 S V DS = -50V, I D = -16 Q g Total Gate Charge 71 1 I D = -16 Q gs Gate-to-Source Charge 21 nc V DS = -120V Q gd Gate-to-Drain ("Miller") Charge 32 = -V f t d(on) Turn-On Delay Time 21 V DD = -75V t r Rise Time 70 ns I D = -16 t d(off) Turn-Off Delay Time 35 R G = 3.9Ω t f Fall Time 30 = -V f C iss Input Capacitance 22 = 0V C oss Output Capacitance 370 V DS = -25V C rss Reverse Transfer Capacitance 89 pf ƒ = 1.0MHz C oss Output Capacitance 2220 = 0V, V DS = -1.0V, ƒ = 1.0MHz C oss Output Capacitance 170 = 0V, V DS = -120V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 340 = 0V, V DS = 0V to -120V valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energyd 2 mj I R valanche Currentc -16 Diode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current -27 (Body Diode) I SM Pulsed Source Current -1 (Body Diode)c V SD Diode Forward Voltage -1.6 V t rr Reverse Recovery Time 150 ns Q rr Reverse Recovery Charge 860 nc MOSFET symbol Conditions showing the integral reverse G S p-n junction diode. T J = 25 C, I S = -16, = 0V f T J = 25 C, I F = -16, V DD = -25V di/dt = -/µs f D 2

3 -I D, Drain-to-Source Current (Α) R DS(on), Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current () -I D, Drain-to-Source Current () 0 VGS TOP -15V -V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 0 VGS TOP -15V -V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 1-4.5V 60µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics T J = 25 C T J = 175 C I D = -27 = -V V DS = 50V 60µs PULSE WIDTH , Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3

4 -I SD, Reverse Drain Current () -I D, Drain-to-Source Current () C, Capacitance(pF) -, Gate-to-Source Voltage (V) = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = -16 V DS = 120V V DS = 75V V DS = 30V 8.0 C iss C oss 4.0 C rss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERTION IN THIS RE LIMITED BY R DS (on).00 T J = 175 C.00 T J = 25 C 1.00 = 0V V SD, Source-to-Drain Voltage (V) 1 Tc = 25 C Tj = 175 C Single Pulse µsec 1msec msec 1 0 -V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating rea 4

5 -I D, Drain Current () 30 V DS R D R G D.U.T. + - V DD T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. mbient Temperature Pulse Width 1 µs Duty Factor 0.1 % Fig a. Switching Time Test Circuit V DS 90% % t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 1 D = 0.50 Thermal Response ( Z thjc ) SINGLE PULSE ( THERML RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= i/ri 1E-006 1E t 1, Rectangular Pulse Duration (sec) Ri ( C/W) τi (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-mbient τ C τ 5

6 E S, Single Pulse valanche Energy (mj) R DS (on), Drain-to-Source On Resistance (mω) R DS(on), Drain-to -Source On Resistance (mω) = -V I D = I D, Drain Current () -, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Drain Current Fig 13. On-Resistance vs. Gate Voltage 12V Current Regulator Same Type as D.U.T..2µF 50KΩ -3m.3µF I G D.U.T. I D Current Sampling Resistors - + V DS - Q G Fig 14a&b. Basic Gate Charge Test Circuit and Waveform V G Q GS Q GD Charge I D TOP BOTTOM -16 VDS L 300 I S R G -20V tp D.U.T IS 0.01Ω DRIVER V DD tp V (BR)DSS 15V Starting T J, Junction Temperature ( C) Fig 15a&b. Unclamped Inductive Test circuit Fig 15c. Maximum valanche Energy and Waveforms vs. Drain Current 6

7 TO-220B Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.3).54 (.415).29 (.405) 3.78 (.149) 3.54 (.139) (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.600) (.584) (.555) (.530) (.255) 6. (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) LED SSIGNMENTS LED SSIGNMENTS HEXFET IGBTs, CoPCK 1 - GTE 1- GTE 2 - DRIN 1- GTE 2- DRIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRIN 3- EMITTER 4- DRIN 4- COLLECTOR 1.40 (.055) 3X 1.15 (.045) 2.54 (.) 2X 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B M 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.4) NOTES: 1 DIMENSIONING & TOLERNCING PER NSI Y14.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-220B. 2 CONTROLLING DIMENSION : INCH 4 HETSINK & LED MESUREMENTS DO NOT INCLUDE BURRS. TO-220B Part Marking Information EXMPLE : THIS IS N IRF WITH SSEMBLY LOT CODE 9B1M INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE IRF B 1M PRT NUMBER DTE CODE (YYWW) YY = YER WW = WEEK Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 1.6mH, R G = 25Ω, I S = -17. ƒ I SD -17, di/dt -520/µs, V DD V (BR)DSS, T J 175 C. Pulse width 300µs; duty cycle 2%. R q is measured at T J of approximately 90 C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.04/04 7

8 Note: For the most current drawings please refer to the IR website at:

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