Microwave Sensor Technology. Microwave Sensor Technology
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1 Microwave Sensor Technology Microwave Sensor Technology
2 Gunn Transceivers Fixed MO MO9096 2
3 Gunn Transceivers Voltage Controlled MO MO9140 Features Electronic Control High Doppler Sensitivity Levels Low AM and FM Noise Levels Direction-of-Motion Sensing Compact Size Pulsed Transceivers Available Applications FM Doppler Radar Systems Altimeters Police Radars Intrusion Alarm Systems Traffic Control Systems Automotive Collision Avoidance Systems Description Microsemi s voltage controlled transceivers provide affordable frequency-modulated microwave power at fixed frequencies. The varactor tuning of the transceiver permits carrier frequency modulation for ranging information. These are CW transceivers; pulsed microwave transceivers are available on request. 25 C Model Number (GHz) 1 Min. Output Power (mw) Drift/ Temperature (KHz/ºC) Nominal Sensitivity (dbc) Min. Electronic Tuning Range (MHz) Tuning Voltage (V DC ) Operating Voltage (V DC ) Typ. Operating Current (ma) X Band Voltage Controlled Transceivers MO to to MO to to MO to to K Band Voltage Controlled Transceivers MO to MO to MO to to MO to to to Ka Band Voltage Controlled Transceivers MO ± to MO ± to MO ± to All X Band transceivers have built-in circulators. 2. M09072 has dual IF output. Other frequencies and power levels available upon request. Operating temperature is -30 C to +70 C. Storage temperature is -40 C to +85 C. 3
4 Gunn Oscillators Fixed MO MO9205 Features Low Cost Small Size Low Power Consumption High-Volume Design Pulsed DC Input Voltage Available Applications Speed Radar Intrusion Alarm Systems Braking Systems Industrial Measurement Level Sensing 25 C Description Microsemi s waveguide output Gunn oscillators are an inexpensive and reliable source of microwave power. The oscillators are designed to suppress spurious signal and harmonic frequencies. Their low-power consumption makes them very useful as local oscillators in microwave receivers. Operating Output Typ. Typ. Operating Part Number Power Drift/Temperature Voltage Operating (GHz) (mw) (KHz/ C) (V DC ) Current (ma) X Band Oscillators MO86751A Min MO86751B Min to MO86751C Min to MO86751D Min to K Band Oscillators MO Min MO to MO to K Band Oscillators Pulsed MO Peak to Peak Ka Band Oscillators MO to MO Other frequencies and power levels available upon request. Operating temperature is -30 C to +70 C. MO9080 pulse width= 10 microseconds duty = 50%. 4
5 Gunn Oscillators Voltage Controlled MO MO9405 Features Low Cost High-Volume Design Various Output Power Levels Pulsed DC Input Voltage Low-Power Consumption FM CW Operation Applications Intrusion Alarm Systems Speed Radar Presence Sensing Traffic Control Level Sensing Weather Radar Amateur Communications 25 C Part Number (GHz) X Band Voltage Controlled Oscillators Typ. Output Power (mw) Freq. Drift/ Temperature (KHz/ºC) Description Microsemi s voltage controlled Gunn oscillators are designed to provide an affordable, frequencymodulated microwave power at a discrete frequency. The varactor tuning of the oscillator permits carrier frequency modulation for ranging information. Min. Electronic Tuning Range (MHz) Tuning Voltage (V DC ) Operating Voltage (V DC ) Operating Current (ma) MO to to MO to to MO to to MO87603B to K Band Voltage Controlled Oscillators MO to MO to to MO to to MO to to MO to to MO to to MO to to MO to to MO to to Ka Band Voltage Controlled Oscillators MO to to Other frequencies and power levels available upon request. Operating temperature is -30 C to +70 C. 5
6 Performance Characteristics Gunn Oscillators MO8651-MO9205 Fixed (GHz) Power Output Power Output (mw) (GHz) Power Output (mw) Temperature (ºC) MO86751 Series and Power vs. Temperature Temperature (ºC) MO9060 and Power vs. Temperature -40 Phase Noise (dbc/hz) MO86751 MO9060 1K 10K 100K 200K From Carrier (Hz) MO9060 and MO86751 Series Typical Phase Noise Performance MO87108-MO9405 Voltage Controlled (GHz) Output Power Power (mw) (GHz) Output Power Output Power (mw) Tuning Voltage (V DC ) MO87108 Series VCO and Power /Tuning Voltage Tuning Voltage (V DC ) MO9070 Series VCO and Power /Tuning Voltage
7 Miniature Ferrite Isolators MO MO9140 Features Models from GHz Low Insertion Loss Good Temperature Performance Small Size Low Cost 25 C Model No. Freq. GHz Min. Bandwidth (%) Min. Isolation (db) Description Microsemi s Miniature Ferrite Isolators are H-Plane, Y-Junction devices with similar performance specifications to standard size isolators. Models are available from GHz and feature low insertion loss and high isolation within the specified bandwidth. MMI series isolators are useful in improving the stability of microwave oscillators and amplifiers by projecting matched impedance across the frequency and preventing reverse and reflected power from adversely affecting performance. Insertion Loss Average Power SWR (Watts) (In & Out) Forward Reverse MMI42595T WR MMI28599T WR MMI22599T WR MMI19599T WR MMI10599T WR Operating temperature range: -10 to +60 C except: -10 C to +50 C for MI
8 Detectors MO MO86571 Features Low Cost Rugged Housings Low Noise High Sensitivity Applications Moisture Measurement Microwave Counters Liquid Level Indicators Flow/No Flow Sensors Microwave Perimeter Protection 25 C Part Number Center (GHz) Minimum Detectable Signal (dbm) 1 RF Bandwidth (MHz) X Band Detector, Mount MO K Band Detector, Mount MO Video amplifier: 1 MHz bandwidth, 2 db noise figure, 100 K input resistance. Other frequencies and power levels available upon request. Operating temperature is -30 C to +70 C. Storage temperature is -40 C to +85 C. Description Microsemi s MO86561 and MO86571 waveguide detectors consist of selected Schottky barrier diodes assembled in a rugged housing suitable for use in industrial applications as a RF detector. Typical Performance Characteristics Output Voltage (mv) 10 1 R L = 100 k 100 R L = 10 k 10 1 R L = 1 k Incident Power (dbm) MO86561 = GHz. I F = 0 A. 8
9 K-Band Modulator MO9207 Features Assembly High Modulation Depth GaAs PIN Diode Low Drive Voltage For Low Cost Commercial Applications 25 C Insertion Loss: 1.5 db 20 ma Modulation Depth: >90% Typ. of Operation: GHz RF Bandwidth: 200 MHz Modulation Rate: 1 Hz 100 khz Drive Voltage: ma, Typ. Description Microsemi s MO9207 K-band modulator with integral GaAs PIN diode is designed for testing Doppler transceivers on the bench and in the field. Various radar cross sections may be simulated by attaching different size horn antennas to the modulator. Maximum Ratings Operating Temperature Storage Temperature Drive Current Typical Performance Characteristics -30 C to +70 C -40 C to +85 C 50 ma Modulator Driver The modulation driver should be current limited to 50 ma pulse current. For a drive current of 20 ma from a 50-ohm modulator operating at 5 volts a 120-ohm resistor should be inserted in series with the PIN diode. % Modulation Off On Off Positive drive is applied to the solder pin on top of unit. is any metallic contact on the waveguide. On Peak PIN Diode Current (ma) M odulation Characte ris tic 9
10 Dimensions GUNN Transceiver/Fixed MO (41.28) 1.65 (41.91) 4X Ø.170 Thru To Mate With UG-39/U WR-90 Mixer Output (12.07) (36.83) Gunn Bias Output Power Adjust Mechanical Adjust (35.56) 1000 Resistor (44.45) MO (41.28) (50.8) 8-32 UNC-2B, 4 Plcs. To Mate With UG-39/U WR Resistors 50 μf Electrolytic Capacitor 1.63 (41.28) (29.72) (50.8) Gunn Bias Mixer Output MO9061, MO9062, MO , MO9081, MO9082 MO Gunn Bias Min (65.79) IF Outputs R.049 (1.2446) (2.41) (39.12) (26.67) Post Single Mixer (B) For Motion Sensing Gunn Diode (65.79) 1.32 (33.53) Second Mixer (A) For Direction Sensing MO (22.35) MO9402 Gunn Bias Voltage (22.35) Ref. + IF Outputs (37.00) (35.00) Mates With UG/595/U Flange WR-42 Output Mixer Output 1 K Resistor Gunn Bias Ref Ref #4-40-2B THD X DP 4 Plcs Flange Mates To WR-28 With UG599/U Flange Di i i i h
11 0 TO +9.0 VDC GUNN Transceiver/Voltage Controlled MO , 2, 3 Gunn 1.00 Bias (25.4) 1.80 (45.72) (27.94) Gunn Bias Post Voltage 1.80 (45.71) XX.X VDC 1 20 V Date Code (41.28) Varactor Varactor Voltage 1000 IF Load I.F. Output Solder Pin Antenna Screw Mechanical Adjust Flange To Mate With UG-39/U MO87930, MO87849 Tuning Bias Receiver + - Output 4X UNC-2B 595/U WR 42 Mechanical Adjust 2.2 F Tantalum Capacitor Detector Diode DC Return Resistor (33.0) (53.34) 0.95 MO9071, MO Varactor Diode Post Single Mixer (B) For Motion Sensing Min Gunn Diode Second Mixer (A) For Direction Sensing MO9410-1, 2, 3 If Output RF Output To Mate With UG599/U WR Gunn Bias Varactor Bias
12 Dimensions GUNN Oscillators/Fixed MO86790, MO86791 MO86797 Gunn Bias Pin - + Gunn Bias To Mate With UG/595/U WR (33.02) 1.08 (27.43) 1.60 (40.64) Mechanical Adjust To Mate With UG599/U WR μf Capacitor 0.25 (6.35) (20.32) (22.86) 0.76 (19.3) MO9060, MO Mounting Hole Pattern Mates With UG 595/U Flange Min MO9205 Black (P/N 5644) Red (P/N 5645) In Ref Ref. Electrolytic Capacitor P/N 3601 Mechanical Tune 0.116/.119 Dia. Thru 0.22 C'Sink Far Side 4 Holes Flange Mates To WR With UG599/U Flange + MO9205 DC XXXX VO: X.X V 0.60 V OP 0.85 MO86751-A, B, C, D X Bias Solder Pin R.F. Output To Mate With UG-39/U, WR 90 12
13 GUNN Oscillators/Voltage Controlled MO87108 MO87603B 47μF ± 10% Capacitor Mechanical Tuner 1.10 (27.94 mm) Gunn Bias Post Gunn Voltage 1.80 (45.72 mm) DATE CODE Varactor Bias Post Varactor Voltage Freq. Flange To Mate With UG-39/U + AFC VDC Serial No. Date Code 1.63 (4.14) 1.10 (2.80) 0.25 (0.635) 1.63 (4.14) Mates With UG-39/U Cover Flange ( mm) Mechanical Adjust MO87827 MO AFC Bias Bias Gunn Bias Thru Holesb To Mate With UG/595-U, WR Holes To Mate With UG/595-U, WR-42 Self Locking Mechanical Freq. Tuner MO9070 MO9405 Varactor Diode Post Gunn Diode Min RF Output To Mate With UG599/U WR-28 Gunn Bias Varactor Bias
14 Dimensions Miniature Ferrite Isolators 14
15 Detectors MO (3.18) MO x (22.23) 1.30 (33.02) 120 Thru (4x) (3.05) 12.1k Resistor UG-595/U Flange Solder Pin To Mate (20.83) UG-39U WR (33.8) 1.62 (41.1) K-Band Modulator MO (20.83) UG-595/U Flange WR-42 Solder Pin (22.2) 1.30 (33.02) 4X Thru [3.05] (22.2) (3.18) Flange mates with UG-595/U WR-42. Delivered with grounded buss wire for ESD protection. 15
16 Microwave Sensor Technology Device Page Fixed Gunn Transceivers 2 Voltage Controlled Gunn Transceivers 3 Fixed Gunn Oscillators 4 Voltage Controlled Gunn Oscillators 5 Miniature Ferrite Isolators 7 Detectors 8 K-Band Modulator 9 Product Dimensions Fixed Gunn Transceivers 10 Voltage Controlled Gunn Transceivers 11 Fixed Gunn Oscillators 12 Voltage Controlled Gunn Oscillators 13 Miniature Ferrite Isolators 14 Detectors 15 K-Band Modulator 15 Microsemi Microwave Products 75 Technology Drive Lowell, MA Phone: Fax: Microsemi Corporation. Specifi cations subject to change without notice. All trademarks are property of Microsemi Corporation.
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