L IS T O F FIG U R E S

Transcription

1 L IS T O F FIG U R E S Impurity, electric field and space charge profile of PIN diode. Equivalent circuit of PIN diode. Plot of normalized PIN diode resistance versus temperature using carrier lifetime coefficient m as a parameter. Schematic of a temperature compensation circuit Schematic of a digital temperature compensation circuit. The temperature coefficient of carrier lifetime (m) verses junction capacitance of the diode, diode passivation material as the parameter. Equiresistance curve and load line of PIN diode. Equiresistance curves for different/? values. Equiresistance curves for different m values. Equiresistance curves and load lines for different attenuation settings. A simple diode bias circuit for PIN diode based attenuator. Schematic circuit diagram and simple RF equivalent circuit of the forward biased beam-lead PIN diode MIC layout & assembly drawing of PIN diode attenuator. Photograph of the PIN diode based attenuator circuit. I-V characteristic of PIN diode (MPND 4005). Attenuation versus bias current of the diode MPND Attenuation versus frequency at different current and temperature. Measured PIN diode I-V data and load lines to determine Vopt- PIN diode drier circuit for p # (2-m). A simple bias circuit for PIN diode based variable attenuator. PIN diode driver circuit for p = 2-m. Thesis %eg. S January, 2004 XI S C (Bera, Qu-jarat Zlniperstty, India_

2 PIN diode driver circuit to eliminate effect of source resistance PIN diode driver circuit to eliminate effect of on resistance of switch Schottky diode structure Energy band diagram of Schottky diode Depletion layer of Schottky diode Fermi level alignment of Schottky diode RF equivalent circuit of forward biased Schottky diode Simulated RF resistance variation with temperature at fixed current bias and fixed voltage bias condition I-V characteristic and load lines of Schottky diode in presence of RF power Equiresistance curve and optimum load line Simple bias circuit of the Schottky diode Schematic circuit diagram of Schottky diode circuit Photograph of the Schottky diode circuit Measured Schottky diode s V-I data and load lines for different attenuation at Pm = - 30 dbm Measured Schottky diode s V-I data and load lines for different attenuation at Pm = - 25 dbm Measured Schottky diode s V-I data and load lines for different attenuation at Pm = - 20 dbm Measured S21 variation over RF power level for Von = 0.75 Volts Simulated brightness variation with temperature for fixed voltage bias and fixed current bias condition for LED. Equiintensity curve and load line of LED. Equiintensity curves and load lines for different brightness levels of LED Equiintensity curves for different values of temperature coefficient (!TC) Equiintensity curves for different values of p A simple bias circuit of LED. TAD TAesis <Hs> S January, XII S C $ e ra, Qujarat University, India.

3 Calculated light intensity variation with temperature. Measured equiintensity curves of the diode 1N6092 over the temperature of -20 to+80 C Measured light intensity variation with temperature of the diode 1N Series and parallel combination of several LEDs to achieve sufficient brightness Typical I-V characteristic of MESFET with change of temperature. The equivalent circuit model of MESFET and HEMT. MIC assembly drawing and photograph of a 3-Stage C-band amplifier of MESFET (NE-13783). Photograph of a 3-Stage Ku-band amplifier of MESFET(NE67383). MIC assembly drawing and photograph of a 3-Stage Ku-band amplifier of phemt (CFY6708). Block schematic of the vector modulator. Schematic circuit of variable attenuator with phase shift S21 variation of PIN diode over diode resistance. RF equivalent circuit of forward biased PIN diode. Simulated S21 plot of the variable attenuator. Schematic circuit diagram of the proposed vector modulator. Simulated S21 of vector modulator Photograph of vector modulators. Measured polar S21 plot of S-band vector modulator Schematic circuit of the temperature compensated analog vector modulator Schematic circuit of the temperature compensated digitally controlled vector modulator Measured I-V characteristics of Schottky diode in presence of RF power. Simulated RF resistance variation with temperature. Schematic of the proposed diode based linearizer. RF equivalent circuit of forward biased junction diode. Thesis %fg 9{p January, S C Sera, gujarat University, India XIII

4 Calculated amplitude and phase of linearizer. MIC layout and assembly diagram of Ku-band linearizer. Photograph of Ku-band linearizer. AM/AM & AM/PM characteristics of the linearizer for different bias conditions. Photograph of S band linearizer. Amplitude and phase characteristic of SSPA with linearizer. IMD of SSPA with and without linearizer. Measured l&zl variation of distortion generator circuit over RF power level under constant current bias condition. Measured S21 variation of distortion generator circuit over RF power level for constant current bias condition. Measured S21 variation with temperature for optimum load biasing. Block diagram of proposed OLC. Photograph of C-Band SSPA used to demonstrate OLC scheme. Closed loop OLC response under different control bias voltages. I-V characteristics of SBD over temperature. OLC response due to temperature variation of the detector diode. Block diagram of OLC circuit. Complete OLC circuit response over the temperature variation. Basic block diagram of the channel amplifier with ALC. Block diagram with control signals. MIC assembly of 3-stage amplifier. MIC assembly of PIN diode attenuator. Photograph of Ku-band channel amplifier with ALC. Equivalent circuit for Vr i. Plot to determine Vrj. 1-0 characteristic without temperature compensation. Vh'D Tkests!Rfy 9{p : S024 IS'* January, 2004 XIV S C (Bern, ^ ajar at University, India.

5 characteristic of channel amplifier with temperature compensation. Measurement to consider effect of temperature dependency of analogswitch, resistor, Eg, and fo. Plot of load line to determine Vqpt- LIST OF TABLES Table Table Table Test results of the PIN diode based attenuator for Voft= 1.19 Volts. Test results of PIN diode based Attenuator (With Mechanical Switch). Test results of PIN diode based attenuator (With Analog Multiplexer, CD4051). ThD Thesis Keg * January, 2004 XV S C 3 era, Cjujaral University, India.